JP5655646B2 - スピン素子及びこれを用いた磁気センサ及びスピンfet - Google Patents
スピン素子及びこれを用いた磁気センサ及びスピンfet Download PDFInfo
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- JP5655646B2 JP5655646B2 JP2011054564A JP2011054564A JP5655646B2 JP 5655646 B2 JP5655646 B2 JP 5655646B2 JP 2011054564 A JP2011054564 A JP 2011054564A JP 2011054564 A JP2011054564 A JP 2011054564A JP 5655646 B2 JP5655646 B2 JP 5655646B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 55
- 239000002184 metal Substances 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 230000005294 ferromagnetic effect Effects 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 64
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 189
- 230000005415 magnetization Effects 0.000 description 20
- 239000013078 crystal Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
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- 230000000052 comparative effect Effects 0.000 description 10
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- 230000005290 antiferromagnetic effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001362 electron spin resonance spectrum Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
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- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000003302 ferromagnetic material Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
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- 238000000034 method Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 229910003321 CoFe Inorganic materials 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
Description
スピン分極率P=(i(up)−i(down))/i
強磁性体中のスピン分極率PF=(σ(up)−σ(down))/σ(up)+σ(down))
・第1強磁性金属層と第1電極との間の離間距離:50μm
・第2強磁性金属層と第2電極との間の離間距離:50μm
・第1強磁性金属層と第2強磁性金属層との間の離間距離:500nm
・半導体層3の厚み:100nm
・トンネル絶縁層の厚み:1nm
・第1電極と第1強磁性層間の電流:1mA
・第1強磁性層と第2強磁性層の中心間距離:1.7μm
Claims (4)
- 単結晶のSiからなる半導体層と、
前記半導体層の表面上に形成された結晶質の第1トンネル絶縁層と、
前記第1トンネル絶縁層上に形成された第1強磁性金属層と、
を備えたスピン素子であって、
前記半導体層と前記第1トンネル絶縁層との間の界面におけるダングリングボンドの面密度が1×10 14 /cm 2 以上3×1014/cm2以下であることを特徴とするスピン素子。 - 前記第1トンネル絶縁層はMgOであることを特徴とする請求項1に記載のスピン素子。
- 請求項1又は2に記載のスピン素子と、
前記半導体層の表面上に形成された第2トンネル絶縁層と、
前記第2トンネル絶縁層上に形成された第2強磁性金属層と、
前記半導体層上に形成された一対の非磁性金属からなる電極と、
を備えることを特徴とする磁気センサ。 - 請求項1又は2に記載のスピン素子と、
前記半導体層の表面上に形成された第2トンネル絶縁層と、
前記第2トンネル絶縁層上に形成された第2強磁性金属層と、
前記第1及び第2強磁性金属層間における前記半導体層の電位を制御するゲート電極と、
を備えることを特徴とするスピンFET。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011054564A JP5655646B2 (ja) | 2011-03-11 | 2011-03-11 | スピン素子及びこれを用いた磁気センサ及びスピンfet |
US13/416,574 US20120228683A1 (en) | 2011-03-11 | 2012-03-09 | Spin device, and magnetic sensor and spin fet using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011054564A JP5655646B2 (ja) | 2011-03-11 | 2011-03-11 | スピン素子及びこれを用いた磁気センサ及びスピンfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012191063A JP2012191063A (ja) | 2012-10-04 |
JP5655646B2 true JP5655646B2 (ja) | 2015-01-21 |
Family
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JP2011054564A Expired - Fee Related JP5655646B2 (ja) | 2011-03-11 | 2011-03-11 | スピン素子及びこれを用いた磁気センサ及びスピンfet |
Country Status (2)
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US (1) | US20120228683A1 (ja) |
JP (1) | JP5655646B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4908540B2 (ja) * | 2009-03-25 | 2012-04-04 | 株式会社東芝 | スピンmosfetおよびリコンフィギャラブルロジック回路 |
JP2011222546A (ja) * | 2010-04-02 | 2011-11-04 | Tdk Corp | スピン伝導素子 |
WO2013099740A1 (ja) * | 2011-12-28 | 2013-07-04 | Tdk株式会社 | スピン注入電極構造、スピン伝導素子及びスピン伝導デバイス |
US20180351084A1 (en) * | 2015-11-27 | 2018-12-06 | Tdk Corporation | Spin current magnetization reversal-type magnetoresistive effect element and method for producing spin current magnetization reversal-type magnetoresistive effect element |
US10686127B2 (en) * | 2016-03-28 | 2020-06-16 | National University Of Singapore | Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque |
JP7546849B2 (ja) * | 2020-07-07 | 2024-09-09 | 日本電信電話株式会社 | トンネル接合、トンネル接合素子およびトンネル接合の作製方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW501282B (en) * | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
KR100789044B1 (ko) * | 2003-03-26 | 2007-12-26 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 스핀 의존 전달 특성을 갖는 트랜지스터를 이용한 재구성가능한 논리 회로 |
WO2006000790A1 (en) * | 2004-06-25 | 2006-01-05 | Btg International Limited | Formation of nanowhiskers on a substrate of dissimilar material |
JP4111205B2 (ja) * | 2005-05-23 | 2008-07-02 | 日本電気株式会社 | 半導体装置、液晶ディスプレイパネル及び電子機器並びに半導体装置の設計方法及び製造方法 |
US7342244B2 (en) * | 2006-07-19 | 2008-03-11 | Tokyo Electron Limited | Spintronic transistor |
JP5092626B2 (ja) * | 2007-08-28 | 2012-12-05 | Tdk株式会社 | スピントランジスタ |
JP2010021291A (ja) * | 2008-07-09 | 2010-01-28 | Tdk Corp | スピンfet |
US8223423B2 (en) * | 2008-08-28 | 2012-07-17 | Lockheed Martin Corp. | Dynamic reflectarray technology for electro-optical sensors |
JP4738499B2 (ja) * | 2009-02-10 | 2011-08-03 | 株式会社東芝 | スピントランジスタの製造方法 |
JP5144569B2 (ja) * | 2009-03-24 | 2013-02-13 | 株式会社東芝 | スピントランジスタ及び論理回路装置 |
JP2010239011A (ja) * | 2009-03-31 | 2010-10-21 | Tdk Corp | スピン注入構造及びそれを用いたスピン伝導デバイス |
-
2011
- 2011-03-11 JP JP2011054564A patent/JP5655646B2/ja not_active Expired - Fee Related
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2012
- 2012-03-09 US US13/416,574 patent/US20120228683A1/en not_active Abandoned
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JP2012191063A (ja) | 2012-10-04 |
US20120228683A1 (en) | 2012-09-13 |
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