JP2012134229A - 強磁性積層構造及びその製造方法 - Google Patents
強磁性積層構造及びその製造方法 Download PDFInfo
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Abstract
【解決手段】Si単結晶基板上に単結晶のMgO層が成長し、格子整合している。更にこの上に強磁性金属層が形成されている。Si単結晶基板の(100)面上に形成されたMgO層の成長面は(100)面である。ここで、Si単結晶基板とMgO層の界面において、Si(100)[110]方向とMgO(100)[100]方向とが平行となっている。図2(a)はSi(100)面、(b)はMgO(100)面、(c)はこれらの2つの面が格子整合した状態を示す。Si(100)面(a)はSi原子111だけで構成され、MgO(100)面(b)はMg原子121と酸素(O)原子122で構成される。ここでは、Si(100)面上においてMgO(100)面が成長し、図2(c)に示されるように、界面においてSi(100)[110]方向とMgO(100)[100]方向とが平行となっている。
【選択図】 図2
Description
本発明の強磁性積層構造は、シリコン(Si)単結晶上に酸化マグネシウム(MgO)層、強磁性金属層が順次形成され、前記強磁性金属層から前記Si単結晶に電子が注入される強磁性積層構造であって、前記Si単結晶の基板面は(100)面、前記MgO層の成長面は(100)面であり、前記Si単結晶の基板面における[110]方向と前記MgO層の成長面における[100]方向とが互いに平行とされたことを特徴とする。
本発明の強磁性積層構造において、前記強磁性金属層は鉄(Fe)、又は鉄とコバルト(Co)の合金(FeCo合金)で構成され、前記強磁性金属層の成長面は(100)面であり、前記Si単結晶の基板面における[110]方向と前記MgO層の成長面における[100]方向、及び前記強磁性金属層の成長面における[110]方向が互いに平行とされたことを特徴とする。
本発明の強磁性積層構造において、前記MgO層の厚さは0.6nm〜5nmの範囲であることを特徴とする。
本発明の強磁性積層構造の製造方法は、前記強磁性積層構造を製造する製造方法であって、前記Si単結晶基板表面に2×1再構成面を形成した後に、真空中で前記MgO層及び前記強磁性金属層を順次形成することを特徴とする。
本発明の強磁性積層構造の製造方法において、前記MgO層の形成は、MBE(Molecular Beam Epitaxy)法又は電子ビーム蒸着法によって行うことを特徴とする。
上記の構成の実施例として、Si(100)単結晶基板上に、MgO層とFe層(強磁性金属層)を順次を積層し、それぞれにおける結晶構造を調べた。
実施例2として、以下の試料Cを作製し、その構造を調べた。すなわち、Si(100)基板をアセトンとイソプロピルアルコールで洗浄後、表面の酸化膜をフッ酸で除去し、MBE装置内で真空度を3×10−8Paとして、実施例1よりも低温となる500℃で基板を加熱した。室温まで冷却した後、実施例1よりも薄い膜厚1.4nmのMgO層を電子ビーム蒸着法により形成した。さらに、実施例1と同一の膜厚13nmのFe層を電子ビーム蒸着法により形成し、保護層として実施例1と同一の膜厚3nmのTi層を電子ビーム蒸着法で形成した(試料C)。
比較例として、次の試料Dを作製し、その構造を調べた。すなわち、Si(100)単結晶基板をアセトンとイソプロピルアルコールで洗浄後、表面の酸化膜をフッ酸で除去し、MBE装置内で真空度を3×10−8Paとして、実施例1、2よりも低い200℃で基板を加熱した。室温まで冷却した後、実施例2と同一の膜厚1.4nmのMgO層を電子ビーム蒸着法により作製した。更に、実施例1と同一の膜厚13nmのFe層を電子ビーム蒸着法により作製し、保護層として実施例1と同一の膜厚3nmのTi層を電子ビーム蒸着法で作製した(試料D)。
本発明の実施例3として、次の試料Eを作製し、その構造を調べた。すなわち、Si(100)単結晶基板をアセトンとイソプロピルアルコールで洗浄後、表面の酸化膜をフッ酸で除去し、さらに塩酸過酸化水素水混合溶液を用いて酸化膜を形成した。その後、MBE装置内で真空度を3×10−8Paとして、実施例1と同一の1000℃で基板を加熱することにより酸化膜を除去した。前記の通り、この表面においては2×1再構成面が形成される。室温まで冷却した後、実施例1、2よりも薄い膜厚0.8nmのMgO層を電子ビーム蒸着法により作製した。さらに、実施例1と同一の膜厚13nmのFe層を電子ビーム蒸着法により作製し、保護層として実施例1と同一の膜厚3nmのTi層を電子ビーム蒸着法で作製した(試料E)。
11 Si単結晶基板
12 MgO層
13 強磁性金属層
111 Si原子
121 Mg原子
122 酸素原子
Claims (5)
- シリコン(Si)単結晶上に酸化マグネシウム(MgO)層、強磁性金属層が順次形成され、前記強磁性金属層から前記Si単結晶に電子が注入される強磁性積層構造であって、
前記Si単結晶の基板面は(100)面、前記MgO層の成長面は(100)面であり、
前記Si単結晶の基板面における[110]方向と前記MgO層の成長面における[100]方向とが互いに平行とされたことを特徴とする強磁性積層構造。 - 前記強磁性金属層は鉄(Fe)、又は鉄とコバルト(Co)の合金(FeCo合金)で構成され、前記強磁性金属層の成長面は(100)面であり、前記Si単結晶の基板面における[110]方向と前記MgO層の成長面における[100]方向、及び前記強磁性金属層の成長面における[110]方向が互いに平行とされたことを特徴とする請求項1に記載の強磁性積層構造。
- 前記MgO層の厚さは0.6nm〜5nmの範囲であることを特徴とする請求項1又は2に記載の強磁性積層構造。
- 請求項1から請求項3までのいずれか1項に記載の強磁性積層構造を製造する製造方法であって、
前記Si単結晶基板表面に2×1再構成面を形成した後に、真空中で前記MgO層及び前記強磁性金属層を順次形成することを特徴とする強磁性積層構造の製造方法。 - 前記MgO層の形成は、MBE(Molecular Beam Epitaxy)法又は電子ビーム蒸着法によって行うことを特徴とする請求項4に記載の強磁性積層構造の製造方法。
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WO2013099740A1 (ja) * | 2011-12-28 | 2013-07-04 | Tdk株式会社 | スピン注入電極構造、スピン伝導素子及びスピン伝導デバイス |
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US8933522B2 (en) * | 2012-09-28 | 2015-01-13 | Intel Corporation | Repeated spin current interconnects |
US10614953B2 (en) * | 2016-01-12 | 2020-04-07 | University Of Florida Research Foundation, Inc. | Mitigation of contamination of electroplated cobalt-platinum films on substrates |
US11610614B2 (en) * | 2018-04-18 | 2023-03-21 | Tohoku University | Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device |
US11990163B2 (en) * | 2022-06-30 | 2024-05-21 | Western Digital Technologies, Inc. | Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity |
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JP2007529112A (ja) * | 2003-11-12 | 2007-10-18 | フリースケール セミコンダクター インコーポレイテッド | 高k誘電体膜 |
JP2009246082A (ja) * | 2008-03-31 | 2009-10-22 | Akita Prefecture | 強磁性積層構造及びその製造方法 |
JP2010186832A (ja) * | 2009-02-10 | 2010-08-26 | Toshiba Corp | スピントランジスタ及びその製造方法 |
WO2010134435A1 (ja) * | 2009-05-22 | 2010-11-25 | 独立行政法人物質・材料研究機構 | 強磁性トンネル接合体およびそれを用いた磁気抵抗効果素子 |
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JP2007529112A (ja) * | 2003-11-12 | 2007-10-18 | フリースケール セミコンダクター インコーポレイテッド | 高k誘電体膜 |
JP2009246082A (ja) * | 2008-03-31 | 2009-10-22 | Akita Prefecture | 強磁性積層構造及びその製造方法 |
JP2010186832A (ja) * | 2009-02-10 | 2010-08-26 | Toshiba Corp | スピントランジスタ及びその製造方法 |
WO2010134435A1 (ja) * | 2009-05-22 | 2010-11-25 | 独立行政法人物質・材料研究機構 | 強磁性トンネル接合体およびそれを用いた磁気抵抗効果素子 |
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