JP5654309B2 - エンドポイントモニタ及びプラズマ処理方法 - Google Patents

エンドポイントモニタ及びプラズマ処理方法 Download PDF

Info

Publication number
JP5654309B2
JP5654309B2 JP2010222957A JP2010222957A JP5654309B2 JP 5654309 B2 JP5654309 B2 JP 5654309B2 JP 2010222957 A JP2010222957 A JP 2010222957A JP 2010222957 A JP2010222957 A JP 2010222957A JP 5654309 B2 JP5654309 B2 JP 5654309B2
Authority
JP
Japan
Prior art keywords
plasma processing
light emission
timer
time
waveform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010222957A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012079878A (ja
JP2012079878A5 (https=
Inventor
大晃 吉森
大晃 吉森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2010222957A priority Critical patent/JP5654309B2/ja
Publication of JP2012079878A publication Critical patent/JP2012079878A/ja
Publication of JP2012079878A5 publication Critical patent/JP2012079878A5/ja
Application granted granted Critical
Publication of JP5654309B2 publication Critical patent/JP5654309B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2010222957A 2010-09-30 2010-09-30 エンドポイントモニタ及びプラズマ処理方法 Active JP5654309B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010222957A JP5654309B2 (ja) 2010-09-30 2010-09-30 エンドポイントモニタ及びプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010222957A JP5654309B2 (ja) 2010-09-30 2010-09-30 エンドポイントモニタ及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2012079878A JP2012079878A (ja) 2012-04-19
JP2012079878A5 JP2012079878A5 (https=) 2013-12-05
JP5654309B2 true JP5654309B2 (ja) 2015-01-14

Family

ID=46239789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010222957A Active JP5654309B2 (ja) 2010-09-30 2010-09-30 エンドポイントモニタ及びプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP5654309B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899694B2 (en) 2012-07-27 2018-02-20 Lockheed Martin Advanced Energy Storage, Llc Electrochemical energy storage systems and methods featuring high open circuit potential
US9768463B2 (en) 2012-07-27 2017-09-19 Lockheed Martin Advanced Energy Storage, Llc Aqueous redox flow batteries comprising metal ligand coordination compounds
US9865893B2 (en) 2012-07-27 2018-01-09 Lockheed Martin Advanced Energy Storage, Llc Electrochemical energy storage systems and methods featuring optimal membrane systems
US9559374B2 (en) 2012-07-27 2017-01-31 Lockheed Martin Advanced Energy Storage, Llc Electrochemical energy storage systems and methods featuring large negative half-cell potentials
EP2878021B1 (en) * 2012-07-27 2020-12-09 Lockheed Martin Energy, LLC Electrochemical systems featuring high open circuit potential
US12046522B2 (en) * 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2611001B2 (ja) * 1989-07-17 1997-05-21 株式会社日立製作所 終点判定方法および装置
JP2002231695A (ja) * 2001-01-31 2002-08-16 Sony Corp プラズマ処理の終点判定方法

Also Published As

Publication number Publication date
JP2012079878A (ja) 2012-04-19

Similar Documents

Publication Publication Date Title
JP5654309B2 (ja) エンドポイントモニタ及びプラズマ処理方法
JP2010015740A (ja) プラズマ処理装置およびプラズマ処理装置における放電状態監視方法
CN105280474B (zh) 蚀刻处理方法以及斜角蚀刻装置
US8377216B2 (en) Vacuum processing apparatus and vacuum processing method
JP4837368B2 (ja) プラズマ処理システムのアーク検出装置
JP6553353B2 (ja) 基板処理方法及びその装置
KR20230121027A (ko) 처리 장치, 처리 방법 및 기억 매체
JP2013153141A5 (https=)
JP2012079878A5 (https=)
JP6203417B2 (ja) 成膜装置、及び成膜方法
KR102357456B1 (ko) 고주파 전력 공급 장치 및 고주파 전력의 공급 방법
US20150168363A1 (en) Substrate processing apparatus and method for detecting an abnormality of an ozone gas concentration
KR101163913B1 (ko) 처리 개시 가부 판정 방법 및 기억 매체
JP3349944B2 (ja) チャンバー内の堆積物のモニター方法
KR20100052819A (ko) 기판 처리 장치에서의 팬 필터 유닛의 제어 장치
US20090236316A1 (en) Substrate processing method and substrate processing apparatus
CN104979746B (zh) 激光加工装置
JP2006328510A (ja) プラズマ処理方法及び装置
JP6166137B2 (ja) 荷電粒子線装置
JP2020035949A (ja) 半導体プラズマ処理装置のクリーニング終点検出方法およびチャンバクリーニング方法
JP2007266211A (ja) 半導体製造装置及び半導体製造方法
JP2002353201A (ja) プラズマモニタリング装置およびプラズマモニタリング方法
CN100444346C (zh) 一种半导体刻蚀设备中控制分子泵的方法
US20070246063A1 (en) Method of performing a pressure calibration during waferless autoclean process
TW200826181A (en) Etching process, etching machine, method for destination detection of etching process and detection device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130927

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131023

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140922

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141120

R150 Certificate of patent or registration of utility model

Ref document number: 5654309

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150