JP5653941B2 - 真空チャンバー内の真空を実現する方法および設備 - Google Patents

真空チャンバー内の真空を実現する方法および設備 Download PDF

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Publication number
JP5653941B2
JP5653941B2 JP2011550593A JP2011550593A JP5653941B2 JP 5653941 B2 JP5653941 B2 JP 5653941B2 JP 2011550593 A JP2011550593 A JP 2011550593A JP 2011550593 A JP2011550593 A JP 2011550593A JP 5653941 B2 JP5653941 B2 JP 5653941B2
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Japan
Prior art keywords
pump
vacuum chamber
vacuum
chamber
pressure
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Expired - Fee Related
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JP2011550593A
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Japanese (ja)
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JP2012518878A5 (enExample
JP2012518878A (ja
Inventor
バルトゥセン、サンデル
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S417/00—Pumps
    • Y10S417/901—Cryogenic pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011550593A 2009-02-22 2010-02-22 真空チャンバー内の真空を実現する方法および設備 Expired - Fee Related JP5653941B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19
PCT/EP2010/052218 WO2010094801A1 (en) 2009-02-22 2010-02-22 A method and arrangement for realizing a vacuum in a vacuum chamber

Publications (3)

Publication Number Publication Date
JP2012518878A JP2012518878A (ja) 2012-08-16
JP2012518878A5 JP2012518878A5 (enExample) 2013-04-11
JP5653941B2 true JP5653941B2 (ja) 2015-01-14

Family

ID=42124236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011550593A Expired - Fee Related JP5653941B2 (ja) 2009-02-22 2010-02-22 真空チャンバー内の真空を実現する方法および設備

Country Status (7)

Country Link
US (2) US8366423B2 (enExample)
EP (1) EP2399272A1 (enExample)
JP (1) JP5653941B2 (enExample)
KR (1) KR101553802B1 (enExample)
CN (1) CN102414775A (enExample)
TW (1) TW201100973A (enExample)
WO (1) WO2010094801A1 (enExample)

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CN103187231A (zh) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 一种离子注入机自动建立束线与靶室高真空的方法
CN104321701B (zh) * 2012-03-20 2017-04-12 迈普尔平版印刷Ip有限公司 用于运输自由基的装置和方法
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
CN103727036B (zh) * 2014-01-18 2015-04-15 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN103727051B (zh) * 2014-01-18 2015-05-13 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
CN105931694B (zh) * 2016-05-06 2018-05-22 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN206332060U (zh) * 2016-10-28 2017-07-14 应用材料公司 热学腔室
CN106586282A (zh) * 2016-12-09 2017-04-26 安徽亿瑞深冷能源科技有限公司 一种可独立控制的多真空腔体高温存储设备
US10794536B2 (en) * 2017-11-30 2020-10-06 Cryogenic Fuels Inc. Vacuum acquisition systems and methods
US20220065727A1 (en) * 2020-08-28 2022-03-03 Kla Corporation Coolant Microleak Sensor for a Vacuum System
CN115110040B (zh) * 2022-06-20 2024-05-14 北京维开科技有限公司 一种独立双腔室电子束蒸发镀膜设备
US20240337265A1 (en) * 2023-04-06 2024-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Cryogenic pump for semiconductor processing
FR3164314A1 (fr) * 2024-07-03 2026-01-09 Pfeiffer Vacuum Equipement et procédé de fabrication
CN119781255A (zh) * 2025-01-24 2025-04-08 中国科学院微电子研究所 光刻机及光刻机污染控制方法

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Also Published As

Publication number Publication date
US8366423B2 (en) 2013-02-05
WO2010094801A1 (en) 2010-08-26
KR20110129414A (ko) 2011-12-01
CN102414775A (zh) 2012-04-11
KR101553802B1 (ko) 2015-09-17
US20100269911A1 (en) 2010-10-28
US8857465B2 (en) 2014-10-14
TW201100973A (en) 2011-01-01
US20130133752A1 (en) 2013-05-30
JP2012518878A (ja) 2012-08-16
EP2399272A1 (en) 2011-12-28

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