JP5649315B2 - 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池 - Google Patents

太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池 Download PDF

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Publication number
JP5649315B2
JP5649315B2 JP2010049630A JP2010049630A JP5649315B2 JP 5649315 B2 JP5649315 B2 JP 5649315B2 JP 2010049630 A JP2010049630 A JP 2010049630A JP 2010049630 A JP2010049630 A JP 2010049630A JP 5649315 B2 JP5649315 B2 JP 5649315B2
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JP
Japan
Prior art keywords
transparent conductive
unevenness
cured resin
solar cell
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010049630A
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English (en)
Japanese (ja)
Other versions
JP2011187573A (ja
JP2011187573A5 (enExample
Inventor
秀男 竹添
秀男 竹添
ウオンヘ ク
ウオンヘ ク
涼 西村
涼 西村
隆史 關
隆史 關
鳥山　重隆
重隆 鳥山
旬紋 鄭
旬紋 鄭
真林 福田
真林 福田
麻登香 福島
麻登香 福島
聡 増山
聡 増山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Institute of Technology
Eneos Corp
Original Assignee
Tokyo Institute of Technology
JX Nippon Oil and Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010049630A priority Critical patent/JP5649315B2/ja
Application filed by Tokyo Institute of Technology, JX Nippon Oil and Energy Corp filed Critical Tokyo Institute of Technology
Priority to US13/582,798 priority patent/US20130186462A1/en
Priority to EP11750831A priority patent/EP2544243A1/en
Priority to KR1020127025994A priority patent/KR101726017B1/ko
Priority to PCT/JP2011/055118 priority patent/WO2011108722A1/ja
Priority to CN201180012596.1A priority patent/CN102782868B/zh
Publication of JP2011187573A publication Critical patent/JP2011187573A/ja
Publication of JP2011187573A5 publication Critical patent/JP2011187573A5/ja
Application granted granted Critical
Publication of JP5649315B2 publication Critical patent/JP5649315B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/104—Esters of polyhydric alcohols or polyhydric phenols of tetraalcohols, e.g. pentaerythritol tetra(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
JP2010049630A 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池 Expired - Fee Related JP5649315B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010049630A JP5649315B2 (ja) 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池
EP11750831A EP2544243A1 (en) 2010-03-05 2011-03-04 Transparent conductive substrate for solar cell, method for manufacturing the substrate, and solar cell using the substrate
KR1020127025994A KR101726017B1 (ko) 2010-03-05 2011-03-04 태양 전지용 투명 도전성 기판, 그의 제조 방법 및 이를 이용한 태양 전지
PCT/JP2011/055118 WO2011108722A1 (ja) 2010-03-05 2011-03-04 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池
US13/582,798 US20130186462A1 (en) 2010-03-05 2011-03-04 Transparent electroconductive substrate for solar cell, method for manufacturing the substrate, and solar cell using the substrate
CN201180012596.1A CN102782868B (zh) 2010-03-05 2011-03-04 太阳能电池用透明导电性基板、其制造方法以及使用其的太阳能电池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010049630A JP5649315B2 (ja) 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014017746A Division JP5765791B2 (ja) 2014-01-31 2014-01-31 太陽電池用透明導電性基板の製造方法

Publications (3)

Publication Number Publication Date
JP2011187573A JP2011187573A (ja) 2011-09-22
JP2011187573A5 JP2011187573A5 (enExample) 2012-09-06
JP5649315B2 true JP5649315B2 (ja) 2015-01-07

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JP2010049630A Expired - Fee Related JP5649315B2 (ja) 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池

Country Status (6)

Country Link
US (1) US20130186462A1 (enExample)
EP (1) EP2544243A1 (enExample)
JP (1) JP5649315B2 (enExample)
KR (1) KR101726017B1 (enExample)
CN (1) CN102782868B (enExample)
WO (1) WO2011108722A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624971B (zh) * 2013-06-27 2018-05-21 王子控股股份有限公司 有機薄膜太陽能電池及有機薄膜太陽能電池之製造方法
WO2016021533A1 (ja) * 2014-08-04 2016-02-11 Ｊｘ日鉱日石エネルギー株式会社 凹凸パターンを有する部材の製造方法
CN104518037B (zh) * 2015-01-23 2016-06-15 电子科技大学 用于薄膜太阳能电池的多尺度陷光结构
KR101985802B1 (ko) 2015-06-11 2019-06-04 주식회사 엘지화학 적층체
KR101736615B1 (ko) 2015-12-14 2017-05-29 한국산업기술대학교산학협력단 광전소자 및 이의 제조방법
WO2020000596A1 (zh) * 2018-06-27 2020-01-02 北京铂阳顶荣光伏科技有限公司 用于太阳能芯片组件的透光处理系统和透光处理方法

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US4719152A (en) * 1984-09-21 1988-01-12 Konishiroku Photo Industry Co., Ltd. Transparent conductive layer built-up material
TW540747U (en) * 1992-02-19 2003-07-01 Sharp Kk A reflective substrate and a liquid crystal display device using the same
JPH06221838A (ja) * 1993-01-27 1994-08-12 Fujitsu Ltd 表面粗さ評価方法
JP3433988B2 (ja) * 1993-10-08 2003-08-04 オリンパス光学工業株式会社 焦点板作成用金型の製造方法
JP2504378B2 (ja) 1993-10-22 1996-06-05 株式会社日立製作所 太陽電池基板の製造方法
US6099786A (en) * 1996-02-23 2000-08-08 Prime View International Co. Method of making accurate dimension alignment film for LCD
JP3719632B2 (ja) 1998-12-17 2005-11-24 三菱電機株式会社 シリコン太陽電池の製造方法
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JP4017281B2 (ja) 1999-03-23 2007-12-05 三洋電機株式会社 太陽電池及びその製造方法
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
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JP5068946B2 (ja) 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
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Also Published As

Publication number Publication date
CN102782868A (zh) 2012-11-14
KR101726017B1 (ko) 2017-04-11
KR20130050284A (ko) 2013-05-15
CN102782868B (zh) 2015-04-08
US20130186462A1 (en) 2013-07-25
EP2544243A1 (en) 2013-01-09
WO2011108722A1 (ja) 2011-09-09
JP2011187573A (ja) 2011-09-22

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