JP5647220B2 - マイクロ及びナノスケールの３次元構造の製造方法並びに製造装置 - Google Patents

マイクロ及びナノスケールの３次元構造の製造方法並びに製造装置 Download PDF

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JP5647220B2
JP5647220B2 JP2012502763A JP2012502763A JP5647220B2 JP 5647220 B2 JP5647220 B2 JP 5647220B2 JP 2012502763 A JP2012502763 A JP 2012502763A JP 2012502763 A JP2012502763 A JP 2012502763A JP 5647220 B2 JP5647220 B2 JP 5647220B2
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milling
milled
depth
dimensional
ion
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Japanese (ja)
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JP2012522346A5 (enExample
JP2012522346A (ja
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デヴィッド コックス
デヴィッド コックス
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University of Surrey
UK Secretary of State for Business Innovation and Skills
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University of Surrey
UK Secretary of State for Business Innovation and Skills
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2583—Tubes for localised analysis using electron or ion beams characterised by their application using tunnel effects, e.g. STM, AFM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2012502763A 2009-03-31 2010-03-29 マイクロ及びナノスケールの３次元構造の製造方法並びに製造装置 Expired - Fee Related JP5647220B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0905571.6A GB0905571D0 (en) 2009-03-31 2009-03-31 Method and apparatus for producing three dimensional nano and micro scale structures
GB0905571.6 2009-03-31
PCT/GB2010/000599 WO2010112827A2 (en) 2009-03-31 2010-03-29 Method and apparatus for producing three dimensional nano and micro scale structures

Publications (3)

Publication Number Publication Date
JP2012522346A JP2012522346A (ja) 2012-09-20
JP2012522346A5 JP2012522346A5 (enExample) 2013-05-16
JP5647220B2 true JP5647220B2 (ja) 2014-12-24

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Family Applications (1)

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JP2012502763A Expired - Fee Related JP5647220B2 (ja) 2009-03-31 2010-03-29 マイクロ及びナノスケールの３次元構造の製造方法並びに製造装置

Country Status (5)

Country Link
US (1) US20120067718A1 (enExample)
EP (1) EP2415066B1 (enExample)
JP (1) JP5647220B2 (enExample)
GB (1) GB0905571D0 (enExample)
WO (1) WO2010112827A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8618518B2 (en) 2011-03-15 2013-12-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Apparatus and method for forming a solid immersion lens using a binary bitmap milling pattern
US8937019B2 (en) 2012-04-03 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Techniques for generating three dimensional structures
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
US9932664B2 (en) 2012-11-06 2018-04-03 Purdue Research Foundation Methods for directed irradiation synthesis with ion and thermal beams
CN105264635B (zh) * 2012-12-31 2018-11-20 Fei 公司 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计
US9057670B2 (en) * 2013-05-30 2015-06-16 International Business Machines Corporation Transmission electron microscope sample fabrication
US11004656B2 (en) 2014-10-15 2021-05-11 Gatan, Inc. Methods and apparatus for determining, using, and indicating ion beam working properties

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
US7072267B2 (en) * 2001-11-26 2006-07-04 William Monford Wood Image and data storage by focused ion beam recordation and method thereof
JP4304947B2 (ja) * 2002-09-26 2009-07-29 株式会社日立製作所 磁気記録媒体とそれを用いた磁気メモリ装置、磁気記録方法、信号再生方法
JP2004226079A (ja) * 2003-01-20 2004-08-12 Seiko Instruments Inc 表面あるいは断面加工観察方法及びその装置
KR100709514B1 (ko) * 2003-02-28 2007-04-20 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 Ｆｉｂ-ｃｖｄ에 의한 3차원 마이크로 구조물 제조 방법 및3차원 마이크로 구조물의 묘화 시스템
US6838683B1 (en) * 2003-06-18 2005-01-04 Intel Corporation Focused ion beam microlathe
JP2005177878A (ja) * 2003-12-16 2005-07-07 Masao Murakawa 微細３次元凸形状体の作成方法
US7254884B2 (en) * 2004-09-20 2007-08-14 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating a pole tip in a magnetic transducer using feed-forward and feedback
KR20070093053A (ko) * 2004-11-15 2007-09-17 크레던스 시스템스 코포레이션 집속 이온 빔 데이터 분석에 관한 시스템 및 방법
US7427753B2 (en) * 2005-06-16 2008-09-23 Applied Materials, Israel, Ltd. Method of cross-section milling with focused ion beam (FIB) device
JP2007069329A (ja) * 2005-09-08 2007-03-22 Japan Science & Technology Agency 微小立体構造操作具の作製方法及びそれによって作製される微小立体構造操作具
JP4676339B2 (ja) * 2006-01-10 2011-04-27 株式会社日立ハイテクノロジーズ 荷電ビーム装置及び試料作製・観察方法
GB2438241A (en) 2006-05-16 2007-11-21 Secretary Trade Ind Brit Machining of microstructures
JP4388101B2 (ja) * 2007-06-19 2009-12-24 株式会社日立ハイテクノロジーズ 荷電粒子線加工装置
JP2008270072A (ja) * 2007-04-24 2008-11-06 Sii Nanotechnology Inc 荷電粒子ビーム装置

Also Published As

Publication number Publication date
WO2010112827A3 (en) 2010-12-02
US20120067718A1 (en) 2012-03-22
EP2415066A2 (en) 2012-02-08
JP2012522346A (ja) 2012-09-20
EP2415066B1 (en) 2013-08-21
GB0905571D0 (en) 2009-05-13
WO2010112827A2 (en) 2010-10-07

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