JP5632599B2 - 発振器 - Google Patents

発振器 Download PDF

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Publication number
JP5632599B2
JP5632599B2 JP2009205672A JP2009205672A JP5632599B2 JP 5632599 B2 JP5632599 B2 JP 5632599B2 JP 2009205672 A JP2009205672 A JP 2009205672A JP 2009205672 A JP2009205672 A JP 2009205672A JP 5632599 B2 JP5632599 B2 JP 5632599B2
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JP
Japan
Prior art keywords
line
terminal
transistor
negative resistance
resistance element
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Application number
JP2009205672A
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English (en)
Japanese (ja)
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JP2011061275A (ja
JP2011061275A5 (enExample
Inventor
亮太 関口
亮太 関口
井辻　健明
健明 井辻
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009205672A priority Critical patent/JP5632599B2/ja
Priority to EP10760110.6A priority patent/EP2476207B1/en
Priority to PCT/JP2010/065574 priority patent/WO2011027913A1/en
Priority to US13/384,222 priority patent/US8451069B2/en
Priority to CN201080039014.4A priority patent/CN102577099B/zh
Publication of JP2011061275A publication Critical patent/JP2011061275A/ja
Publication of JP2011061275A5 publication Critical patent/JP2011061275A5/ja
Application granted granted Critical
Publication of JP5632599B2 publication Critical patent/JP5632599B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP2009205672A 2009-09-07 2009-09-07 発振器 Active JP5632599B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009205672A JP5632599B2 (ja) 2009-09-07 2009-09-07 発振器
EP10760110.6A EP2476207B1 (en) 2009-09-07 2010-09-03 Oscillator having negative differential resistance device for generating electromagnetic wave
PCT/JP2010/065574 WO2011027913A1 (en) 2009-09-07 2010-09-03 Oscillator having negative differential resistance device for generating electromagnetic wave
US13/384,222 US8451069B2 (en) 2009-09-07 2010-09-03 Oscillator having negative resistance device for generating electromagnetic wave
CN201080039014.4A CN102577099B (zh) 2009-09-07 2010-09-03 具有用于产生电磁波的负微分电阻器件的振荡器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009205672A JP5632599B2 (ja) 2009-09-07 2009-09-07 発振器

Publications (3)

Publication Number Publication Date
JP2011061275A JP2011061275A (ja) 2011-03-24
JP2011061275A5 JP2011061275A5 (enExample) 2012-10-25
JP5632599B2 true JP5632599B2 (ja) 2014-11-26

Family

ID=43234252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009205672A Active JP5632599B2 (ja) 2009-09-07 2009-09-07 発振器

Country Status (5)

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US (1) US8451069B2 (enExample)
EP (1) EP2476207B1 (enExample)
JP (1) JP5632599B2 (enExample)
CN (1) CN102577099B (enExample)
WO (1) WO2011027913A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5735824B2 (ja) 2011-03-04 2015-06-17 キヤノン株式会社 情報取得装置及び情報取得方法
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
CN110518116B (zh) * 2019-08-06 2021-08-10 武汉理工大学 基于雪崩效应的兼具非饱和磁阻和负微分电阻特征的器件
JP7493922B2 (ja) * 2019-08-26 2024-06-03 キヤノン株式会社 発振器、撮像装置
JP7362409B2 (ja) 2019-10-17 2023-10-17 キヤノン株式会社 照明装置およびカメラシステム
CN115184225B (zh) * 2022-01-29 2024-11-01 西南大学 一种高q有源传感器
JP2023157737A (ja) 2022-04-15 2023-10-26 キヤノン株式会社 アンテナ装置、通信装置、及び、撮像システム

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3195071A (en) * 1960-08-12 1965-07-13 Rca Corp Constant power output high frequency tuning circuit and apparatus
US3065432A (en) * 1961-08-10 1962-11-20 Capitol Broadcasting Company I Wide range tunnel diode oscillator
BE621889A (enExample) * 1961-08-31
US4801898A (en) * 1988-03-17 1989-01-31 Hitachi Denshi Kabushiki Kaisha Voltage-controlled oscillator
GB9013762D0 (en) * 1990-06-20 1990-08-08 Plessey Telecomm Voltage-controlled oscillator
US5578970A (en) * 1993-03-19 1996-11-26 Nguyen; Thai M. BICMOS monolithic microwave oscillator using negative resistance cell
JP2876947B2 (ja) * 1993-07-27 1999-03-31 日本電気株式会社 マイクロ波発振器
NL1000329C2 (nl) 1995-05-09 1996-11-12 Imec Vzw Interuniversitair Mic Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan.
US5708398A (en) * 1996-07-01 1998-01-13 Motorola Dual voltage controlled oscillator using integrated transistor and negative differential resistance diode
US6448553B1 (en) 1999-04-26 2002-09-10 Canon Kabushiki Kaisha Signal detector to be used with scanning probe and atomic force microscope
JP2002310882A (ja) 2001-04-17 2002-10-23 Canon Inc 走査型プローブによる信号検出装置、該装置によるプローブ顕微鏡、及び走査型プローブによる信号検出方法、該方法を用いてサンプル表面を観察する観察方法
JP4588947B2 (ja) * 2001-12-28 2010-12-01 日本電波工業株式会社 コプレーナライン型の高周波発振器
JP4136858B2 (ja) 2003-09-12 2008-08-20 キヤノン株式会社 位置検出装置、及び情報入力装置
JP4217646B2 (ja) 2004-03-26 2009-02-04 キヤノン株式会社 認証方法及び認証装置
JP4250573B2 (ja) 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP2006121643A (ja) 2004-09-21 2006-05-11 Canon Inc 平面アンテナ
JP4878180B2 (ja) 2005-03-24 2012-02-15 キヤノン株式会社 電磁波を用いる検査装置
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP4390147B2 (ja) 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
TW200740124A (en) * 2006-04-03 2007-10-16 Realtek Semiconductor Corp Rail-to-rail input voltage-controlled oscillating device
JP4898472B2 (ja) 2006-04-11 2012-03-14 キヤノン株式会社 検査装置
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
JP4873746B2 (ja) 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
JP4977048B2 (ja) 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
US8067739B2 (en) 2007-06-22 2011-11-29 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5171539B2 (ja) 2007-11-29 2013-03-27 キヤノン株式会社 共鳴トンネル構造体
JP4807707B2 (ja) 2007-11-30 2011-11-02 キヤノン株式会社 波形情報取得装置
JP4975000B2 (ja) 2007-12-07 2012-07-11 キヤノン株式会社 電磁波発生素子、電磁波集積素子、及び電磁波検出装置
JP4975001B2 (ja) 2007-12-28 2012-07-11 キヤノン株式会社 波形情報取得装置及び波形情報取得方法
JP5341488B2 (ja) 2008-01-18 2013-11-13 キヤノン株式会社 テラヘルツ波を測定するための装置及び方法
JP5328319B2 (ja) 2008-01-29 2013-10-30 キヤノン株式会社 テラヘルツ波を用いた検査装置及び検査方法
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子

Also Published As

Publication number Publication date
US8451069B2 (en) 2013-05-28
WO2011027913A1 (en) 2011-03-10
US20120112844A1 (en) 2012-05-10
JP2011061275A (ja) 2011-03-24
CN102577099B (zh) 2015-02-11
EP2476207A1 (en) 2012-07-18
CN102577099A (zh) 2012-07-11
EP2476207B1 (en) 2013-07-24

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