JP5632254B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device having a CMOS transistor and a manufacturing method thereof.

  CMOS transistors are widely used in electronic devices such as memory, logic, amplification, and comparators. In particular, in a circuit in which an analog circuit such as an amplifier or a comparator occupies a large proportion, a slight change in drain current greatly affects the characteristics. As a factor that causes a change in drain current, flicker noise becomes a major problem as well as a reliability problem (NBTI, hot carrier deterioration) in which the threshold voltage fluctuates with time.

Flicker noise is also referred to as 1 / f noise because a temporal change in drain current results in a noise spectrum proportional to the reciprocal of frequency as a result of superposition of changes in various periods. The following equation (i) is often used as a model representing the noise spectrum density Svg, which is an index representing the magnitude of the flicker noise of the MOS transistor.
Svg = Kf / (Cox · L · W · f) (i)
Here, Cox is the capacitance of the gate oxide film per unit area, L and W are the gate length and gate width, and f is the frequency. Kf is a proportional coefficient, and is a parameter representing the flicker noise of the transistor.

  In an analog circuit such as an amplifier, the influence of flicker noise can be suppressed by designing the element area to be large. However, increasing the area is not preferable because it increases the manufacturing cost. Therefore, it is important to stably manufacture a transistor having a small noise parameter Kf. However, it is not easy to stably manufacture a transistor having a small noise parameter Kf, and it has been a long-standing problem to be called fate. Attempts have been made to elucidate the cause of flicker noise, which has been described as fluctuations in mobility in the channel region and fluctuations in carrier concentration, but the essential cause has not been elucidated, and flicker noise There is no transistor without.

  By the way, in a manufacturing process of a PMOS transistor (hereinafter also simply referred to as PMOS), a P-type conductivity such as boron is implanted into a gate electrode to provide P-type conductivity, and a surface channel type PMOS is manufactured. Compared with a channel type PMOS, the PMOS has a small leakage current and a large driving capability. This boron diffuses to the vicinity of the channel through the subsequent heat treatment, but there is a problem that the threshold voltage varies due to variation in the concentration (so-called boron oozing).

As a solution to this problem, after the formation of the gate oxide film, by performing a heat treatment (hereinafter referred to as NO treatment) in an atmosphere containing nitrogen monoxide gas, nitrogen is present in the gate oxide film, A method for preventing diffusion is known (for example, see Non-Patent Document 1).
However, it has been found that a new problem that the flicker noise becomes large occurs in the method using NO treatment. FIG. 7 shows PMOS flicker noise data with and without the NO process.

  FIG. 7 is a diagram showing a noise spectrum with and without NO processing. In FIG. 7, the horizontal axis represents frequency, and the vertical axis represents flicker noise. This data was measured under conditions where the drain current was set to 17 microamperes for a PMOS having a gate length of 2 microns and a gate width of 10 microns. It can be seen from FIG. 7 that flicker noise is increased by performing the NO process. As the cause, the position where nitrogen exists due to the NO treatment affects.

FIG. 8 is a diagram showing a nitrogen concentration distribution in the gate oxide film obtained by NO treatment, which is obtained by SIMS analysis. In FIG. 8, the horizontal axis indicates the depth from the silicon substrate surface, the left vertical axis indicates the nitrogen concentration, and the right vertical axis indicates the secondary ion intensity of O and Si. The depth of 3 nm at which the ionic strength of O decreases means the interface between SiO ₂ and Si. As shown in FIG. 8, the nitrogen introduced by the NO treatment has a peak near the interface with the silicon substrate. It has become. The present inventor has found that nitrogen in the vicinity of this interface causes noise generation.

  It is also well known that the interface state can be reduced by introducing fluorine into the gate oxide film. Furthermore, after forming a polysilicon film to be a gate electrode, fluorine ions are implanted, and fluorine is introduced into the gate oxide film under the polysilicon film, which may be effective in reducing transistor flicker noise. (For example, refer nonpatent literature 2).

L. K. Han, Electron Device Letters, vol. 16, 1995, P319. "Lower noise of MOS type operational amplifier in in-vehicle ECU" Automotive Engineering Society Academic Lecture Preprint 961 (1996-5) p125.

By the way, when the fluorine concentration in the gate oxide film is high, there is a phenomenon that the diffusion of boron is accelerated and the seepage of boron increases. For this reason, the surface channel type PMOS in which a channel is formed at the interface between the gate oxide film and the silicon substrate has a greater demerit than the effect of introducing fluorine.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device and a method of manufacturing the same that can suppress the seepage of boron and stabilize the threshold voltage and reduce noise in a CMOS transistor.

In order to solve the above problems, the present inventor has found that a significant noise reduction can be realized by optimizing the concentration distribution of nitrogen and fluorine in the gate oxide film, and has led to the present invention.
That is, a semiconductor device according to one embodiment of the present invention is a semiconductor device including a CMOS transistor on a silicon substrate, and is provided on the silicon substrate and includes a gate insulating film including a silicon oxide film containing nitrogen and fluorine. And a gate electrode made of polysilicon provided on the gate insulating film, wherein the gate insulating film and the silicon have a peak of nitrogen concentration at a position near the gate electrode in the gate insulating film. The nitrogen concentration in the vicinity of the interface with the substrate is 0.5 atom% or less, the fluorine concentration in the gate insulating film is 1 atom% or more, and the dangling bond at the interface between the gate insulating film and the silicon substrate is caused by the fluorine. Is terminated. The “gate insulating film” of the present invention corresponds to, for example, a gate oxide film 5 described later.

  A semiconductor device according to another aspect of the present invention is a semiconductor device including a CMOS transistor on a silicon substrate, the gate insulating film being provided on the silicon substrate and made of a silicon oxide film containing nitrogen and fluorine; A gate electrode made of polysilicon provided on the gate insulating film, and having a nitrogen concentration peak at a position near the gate electrode in the gate insulating film, and the gate insulating film and the silicon substrate The nitrogen concentration in the vicinity of the interface is 0.5 atom% or less, and in the NMOS transistor of the CMOS transistors, the fluorine concentration in the gate insulating film is 1 atom% or more. The dangling bonds at the interface with the silicon substrate are terminated, while the CMOS transistors The MOS transistor, the fluorine concentration in the gate insulating film is equal to or less than 1 atom%.

  A method of manufacturing a semiconductor device according to still another aspect of the present invention is a method of manufacturing a semiconductor device in which a CMOS transistor is manufactured on a silicon substrate, the step of forming a gate insulating film on the silicon substrate, and the gate Performing nitrogen plasma treatment on the insulating film to introduce nitrogen, forming a gate electrode made of polysilicon on the gate insulating film into which nitrogen has been introduced, and implanting fluorine ions into the gate insulating film And a step of performing a heat treatment after fluorine ions are implanted into the gate insulating film.

  In the method of manufacturing a semiconductor device, in the step of introducing nitrogen, a peak of nitrogen concentration is present at a position in the gate insulating film near the gate electrode, and the interface between the gate insulating film and the silicon substrate Nitrogen introduction conditions are set so that the nitrogen concentration in the vicinity is 0.5 atom% or less, and in the step of implanting fluorine ions, fluorine is added so that the fluorine concentration in the gate insulating film is 1 atom% or more. Ion implantation conditions may be set in advance.

  A method of manufacturing a semiconductor device according to still another aspect of the present invention is a method of manufacturing a semiconductor device in which a CMOS transistor is manufactured on a silicon substrate, the step of forming a gate insulating film on the silicon substrate, and the gate A step of introducing nitrogen by performing nitrogen plasma treatment on the insulating film, a step of forming a gate electrode made of polysilicon on the gate insulating film into which nitrogen has been introduced, and an NMOS transistor of the CMOS transistors are formed. A step of forming a pattern covering the region above the region where the PMOS transistor of the CMOS transistor is formed, and a step of implanting fluorine ions into the gate insulating film using the pattern as a mask, And a step of performing a heat treatment after fluorine ions are implanted into the gate insulating film. And butterflies. The “pattern” of the present invention corresponds to, for example, a photoresist 12 described later.

  In the method of manufacturing a semiconductor device, in the step of introducing nitrogen, a peak of nitrogen concentration is present at a position in the gate insulating film near the gate electrode, and the interface between the gate insulating film and the silicon substrate The condition for introducing nitrogen is set so that the nitrogen concentration in the vicinity is 0.5 atom% or less, and in the step of implanting fluorine ions, the fluorine concentration in the gate insulating film in the region where the NMOS transistor is formed It is also possible to set the fluorine ion implantation conditions so that is 1 atom% or more.

  The CMOS transistor of the present invention can suppress the seepage of boron, stabilizes the threshold voltage, and has an effect of simultaneously including an NMOS transistor with small flicker noise and a PMOS transistor with small flicker noise.

1 is a process diagram illustrating a method for manufacturing a CMOS transistor according to a first embodiment of the present invention; FIG. 3 is a conceptual diagram showing a configuration of a gate oxide film 5 manufactured by the method of Example 1. Process drawing which shows the manufacturing method of the CMOS transistor which concerns on Example 2 of this invention. FIG. 5 is a conceptual diagram showing a configuration of a gate oxide film 5 manufactured by the method of Example 2. The figure which shows the nitrogen concentration distribution in the gate oxide film by nitrogen plasma processing. The table | surface which shows the preparation methods of Examples 1, 2 and Comparative Examples 1-5, and the effect (result). The figure which shows the noise spectrum in the presence or absence of NO process. The figure which shows the nitrogen concentration distribution in the gate oxide film by NO process.

Hereinafter, the present invention will be described based on examples. Note that, in each drawing described below, parts having the same configuration are denoted by the same reference numerals, and repeated description thereof may be omitted.
[Example 1]
1A to 1E are process diagrams showing a method for manufacturing a CMOS transistor according to a first embodiment of the present invention. 1A and 1B, a silicon substrate 1 in a region where an NMOS transistor is formed (hereinafter referred to as an NMOS region) and a silicon substrate in a region where a PMOS transistor is formed (hereinafter referred to as a PMOS region). The process up to forming the gate oxide film 5 on each of the first and second processes is the same as that of a general CMOS transistor manufacturing method.

  That is, as shown in FIG. 1A, first, an element isolation region 2 is formed on, for example, a P-type silicon substrate (Psub) 1. The element isolation region 2 is formed, for example, by forming a trench in the silicon substrate 1 and embedding a silicon oxide film in the trench. The element isolation region 2 separates the NMOS region and the PMOS region. Next, N-type impurities such as phosphorus ions are implanted into the silicon substrate 1 in the PMOS region to form an N-well (Nwell) 4. Next, a P-type impurity such as boron ion is implanted into the silicon substrate 1 in the NMOS region to form a P well 3. Then, an impurity for adjusting the threshold voltage is ion-implanted into each of the P well 3 and the N well 4, and an NMOS transistor (hereinafter also simply referred to as NMOS) and a PMOS transistor (hereinafter also simply referred to as PMOS). Each channel region is formed.

  Next, as shown in FIG. 1B, a gate oxide film 5 is formed on the silicon substrate 1. Here, when transistors with different breakdown voltages are mounted together, for example, after forming a high breakdown voltage gate oxide film 5 having a film thickness of 4 nm to 17 nm, the high breakdown voltage portion is made of a photoresist (not shown) by photolithography. Etching is performed in a masked state. Then, after removing the photoresist (not shown), wet oxidation with a film thickness of, for example, 2 nm to 4 nm is performed on the entire surface of the silicon substrate 1 to create regions having different gate oxide film 5 thicknesses.

  Next, subsequent to the whole surface gate oxidation, annealing treatment (that is, nitrogen plasma treatment) in a nitrogen plasma atmosphere is performed for 10 seconds to 50 seconds at a low temperature of about 300 to 400 ° C., for example. Thus, the region of the surface layer of the gate oxide film 5 having a thickness of 1 to 2 nm (that is, the region from the surface of the gate oxide film 5 to 1 to 2 nm in the depth direction. At a position near the gate electrode to be formed later. 2) to 10 atom% of nitrogen.

Next, as shown in FIG. 1C, a polysilicon film 6 serving as a gate electrode is deposited on the entire surface of the gate oxide film 5 into which nitrogen has been introduced with a film thickness of, for example, 150 nm to 400 nm. Then, fluorine ions are implanted into the entire surface of the polysilicon film 6. The fluorine ion implantation conditions are, for example, an acceleration voltage of 10 to 40 keV and a dose of 1e15 to 4e15 / cm ² .

Next, N-type impurities are ion-implanted into the polysilicon film 6 in the NMOS region. Here, N-type impurities such as phosphorus ions are implanted into the polysilicon film 6 with the PMOS region masked by a photoresist (not shown) by photolithography and the NMOS region exposed from below the photoresist. The phosphorus ion implantation conditions are, for example, an acceleration voltage of 10 to 25 keV and a dose of 2e15 to 6e15 / cm ² . Before and after this, P-type impurities are ion-implanted into the polysilicon film 6 in the PMOS region. Here, P-type impurities such as boron ions are implanted into the polysilicon film 6 with the NMOS region masked by a photoresist (not shown) by photolithography and the PMOS region exposed from below the photoresist. The boron ion implantation conditions are, for example, an acceleration voltage of 10 to 20 keV and a dose of 2e15 to 6e15 / cm ² .

Subsequently, the polysilicon film 6 is processed into an electrode shape by photolithography and etching to form a dual gate. That is, an NMOS gate electrode 7 is formed in the NMOS region, and a PMOS gate electrode 8 is formed in the PMOS region.
Next, although not shown, LDD (lightly doped drain) structures are formed in the NMOS region and the PMOS region, respectively. Here, the PMOS region is masked with a photoresist (not shown) by photolithography, and N-type impurities such as phosphorus ions are implanted into the silicon substrate 1 at a low concentration with the NMOS region exposed from below the photoresist. . As a result, an N-type LDD is formed in the P-well 3. Before and after this, the NMOS region is masked by a photoresist (not shown) by photolithography, and a P-type impurity such as boron ion is exposed to the silicon substrate 1 with the PMOS region exposed from below the photoresist. Inject at low concentration. As a result, a P-type LDD is formed in the N well 4.

Next, an insulating film such as HLD (High Temperature Low Pressure Oxide), for example, is formed on the entire surface of the silicon substrate 1 and etched back to form the gate electrodes 7 and 8 as shown in FIG. Sidewalls 9 are formed on the side surfaces.
Next, source / drains 10 and 11 are formed in the NMOS region and the PMOS region, respectively. In this case, N-type impurities such as phosphorus ions or arsenic ions are implanted at a high concentration into the silicon substrate 1 with the PMOS region masked with photoresist by photolithography and the NMOS region exposed from below the photoresist. Thus, the N-type source / drain 10 is formed. Before and after this, for example, boron ions are implanted into the silicon substrate 1 at a high concentration in a state where the NMOS region is masked with a photoresist by photolithography and the PMOS region is exposed from below the photoresist. A P-type source / drain 11 is formed. Thereafter, an interlayer insulating film and a metal wiring are formed to form a CMOS transistor.

  In the CMOS transistor manufactured by such a method, the variation in the threshold voltage of the PMOS is at a level that causes no problem without causing the problem of boron bleeding. In addition, an NMOS having a small flicker noise and a PMOS having a small flicker noise are provided at the same time.

  FIG. 2 is a conceptual diagram showing the configuration of the gate oxide film 5 of the CMOS transistor manufactured by the method of Example 1 of the present invention. As shown in FIG. 2, in the CMOS transistor produced by the method of the first embodiment, the peak of the nitrogen concentration in the NMOS gate oxide film 5 exists in the vicinity of the gate electrode 7. Similarly, the peak of the nitrogen concentration in the PMOS gate oxide film 5 also exists in the vicinity of the gate electrode 8. In both NMOS and PMOS, the nitrogen concentration in the vicinity of the interface between the gate oxide film 5 and the silicon substrate 1 is 0.5 atom% or less. In both NMOS and PMOS, the fluorine concentration in the gate oxide film 5 is 1 atom% or more, and the dangling bonds of silicon at the interface between the gate oxide film 5 and the silicon substrate 1 are terminated by the fluorine. . Next, a second embodiment of the present invention will be described.

[Example 2]
FIG. 3 is a process diagram showing a method of manufacturing a CMOS transistor according to the second embodiment of the present invention. In the second embodiment, the process up to the step of forming the polysilicon film 6 to be the gate electrode is the same as that of the first embodiment.
That is, as in the first embodiment, according to a general CMOS manufacturing method, after forming the element isolation region 2 on the P-type silicon substrate 1, the P well 3 and the N well 4 are respectively formed, and the threshold voltage is formed. A channel region is formed by ion implantation for adjustment (see FIG. 1A). Next, the gate oxide film 5 is formed. When transistors with different breakdown voltages are mounted together, the high breakdown voltage portion is masked with a photoresist by photolithography after the high breakdown voltage gate oxide film 5 is formed. Etching is performed in the state. Then, after removing the photoresist, wet oxidation is performed on the entire surface of the silicon substrate 1 to create different regions having different thicknesses of the gate oxide film 5.

Next, following the entire surface gate oxidation, 1 to 5 atom% of nitrogen is introduced into the region of the surface layer of 1 to 2 nm of the gate oxide film 5 by nitrogen plasma treatment (see FIG. 1B). Subsequently, a polysilicon film 6 to be a gate electrode is deposited on the entire surface.
Next, as shown in FIG. 3, the PMOS region is masked with a photoresist 12 by photolithography, and fluorine ions are implanted. The fluorine ion implantation conditions are, for example, an acceleration voltage of 10 to 40 keV and a dose of 2e15 to 6e15 / cm ² .

The subsequent steps are the same as those in the first embodiment. That is, phosphorus ions are implanted into the NMOS region, boron ions are implanted into the PMOS region, and the polysilicon film 6 is processed into an electrode shape by photolithography and etching to form gate electrodes 7 and 8 (FIG. 1D). reference). Next, in the NMOS region and the PMOS region, an LDD structure (not shown) is formed, the sidewall 9 is formed, and then the source / drain 10 and 11 are formed. Thereafter, an interlayer insulating film and a metal wiring are formed to form a CMOS transistor.
The CMOS transistor manufactured by such a method is provided with an NMOS having a small flicker noise and a PMOS having a small flicker noise at the same time without causing a problem of boron leakage.

  FIG. 4 is a conceptual diagram showing the configuration of the gate oxide film 5 of the CMOS transistor manufactured by the method of Example 2 of the present invention. As shown in FIG. 4, in the CMOS transistor created by the method of the second embodiment, the peak of the nitrogen concentration in the gate oxide film 5 exists in the vicinity of the gate electrodes 7 and 8 in both NMOS and PMOS. In both NMOS and PMOS, the nitrogen concentration in the vicinity of the interface between the gate oxide film 5 and the silicon substrate 1 is 0.5 atom% or less. Further, the fluorine concentration in the NMOS gate oxide film 5 is 1 atom% or more, and the dangling bonds of silicon at the interface between the gate oxide film 5 and the silicon substrate 1 are terminated by the fluorine. On the other hand, the fluorine concentration in the PMOS gate oxide film 5 is 1 atom% or less.

(Effect of nitrogen plasma treatment)
Next, the effect of introducing nitrogen, which is a feature of the present invention, will be described. FIG. 5 shows the nitrogen concentration distribution in the gate oxide film produced by the same method as in Example 1 (that is, nitrogen plasma treatment was performed). Moreover, the table | surface which shows the method of Examples 1, 2 and the method of Comparative Examples 1-5 demonstrated below and those results (effect) is shown as FIG.

FIG. 5 is a diagram showing a nitrogen concentration profile obtained by nitrogen plasma treatment, which is obtained by SIMS analysis. In FIG. 5, the horizontal axis indicates the depth from the surface of the silicon substrate, the left vertical axis indicates the nitrogen concentration, and the right vertical axis indicates the secondary ion intensity of O and Si. The depth of 3 nm where the ionic strength of O decreases means the interface between SiO ₂ and Si, but it can be seen that the peak of the distribution of nitrogen introduced by the nitrogen plasma treatment is in the region of 2 nm of the surface layer of the gate oxide film. . Since the SIMS analysis result appears broader than the actual distribution, the actual nitrogen concentration near the interface is smaller than the concentration seen in FIG. Hereinafter, the effect by nitrogen plasma processing is demonstrated using Comparative Examples 1-3.

[Comparative Example 1]
In Comparative Example 1, a CMOS transistor was manufactured by the same method as in Example 1 except that fluorine ions were not implanted after forming the polysilicon film in the process of manufacturing the CMOS transistor of Example 1.
[Comparative Example 2]
In Comparative Example 2, in the process of fabricating a CMOS transistor as in Comparative Example 1, instead of performing nitrogen plasma treatment after the entire surface gate oxidation, the mixed gas atmosphere of nitrogen monoxide gas and nitrogen gas is used at 1000 to 1100 ° C. Annealing treatment (i.e., NO treatment) was performed. Other than that, a CMOS transistor was fabricated by the same method as in Comparative Example 1.
[Comparative Example 3]
In Comparative Example 3, a CMOS transistor was fabricated in the same manner as in Comparative Example 1, except that in the process of fabricating a CMOS transistor as in Comparative Example 1, nitrogen plasma treatment and NO treatment were not performed after the entire surface gate oxidation. .

  As shown in FIG. 6, when the measurement of the MOS transistor fabricated in this way was evaluated, in Comparative Example 1 and Comparative Example 2, no abnormality in the threshold voltage variation was observed, and the problem of boron leakage was observed. Although not, in Comparative Example 3, the variation in threshold voltage was three times that in Comparative Example 1. If boron exudes, the threshold voltage tends to vary. Therefore, by introducing 2 to 10 atom% of nitrogen into the region of the surface layer of the gate oxide film of 1 to 2 nm, it was confirmed that there was an effect of suppressing boron exudation similarly to the NO treatment.

Further, the flicker noise of the MOS transistor thus manufactured was measured. In the conventional example, Kf was 8 to 15 times as large as that of NMOS and PMOS in comparison with Comparative Example 1. Further, as shown in FIG. 6, in Comparative Example 1, it was found that the Kf of the PMOS was reduced to about 1/5 compared to the Comparative Example 2, but the Kf of the NMOS had a clear reduction effect. I couldn't see it.
The reason for this result is that the value of the nitrogen concentration in the vicinity of the interface between the silicon substrate and the gate oxide film, which affects flicker noise, is as low as 0.5 atom% or less in Comparative Example 1, whereas in Comparative Example 2 is 2 to 3 atom%, and this difference is considered to increase the trap density of the holes and greatly affect the flicker noise characteristics. Therefore, it has been found that the use of nitrogen plasma treatment can solve the problem of boron leakage while reducing the flicker noise of PMOS as compared with NO treatment.

(Effect of fluorine ion implantation)
Next, the effect of fluorine ion implantation effective for reducing the flicker noise of the MOS transistor will be described.
[Comparative Example 4]
In Comparative Example 4, a CMOS transistor was produced in the same manner as in Example 1 except that in the process of producing the CMOS transistor of Example 1, nitrogen plasma treatment was not performed after the entire surface gate oxidation. However, in order to clarify the effect of fluorine ion implantation, the dose of fluorine ions was up to 6e15 cm ⁻² .
[Comparative Example 5]
In Comparative Example 5, fluorine ions are not implanted into the polysilicon film in the process of manufacturing the CMOS transistor. Other than that, a CMOS transistor was fabricated by the same method as in Comparative Example 4.

  When the flicker noise of the NMOS manufactured in this way was measured, as shown in FIG. 6, in Comparative Example 4, Kf was reduced from 1/3 to 1/10 compared to Comparative Example 5. I understood. Further, in the PMOS in which the gate oxide film is as thick as 10 nm or more and boron exudation does not become apparent, the comparative example 4 also has a Kf of 1/2 to 1/10 compared to the comparative example 5. It was found that it was reduced. The reason for such a result is considered to be that dangling bonds at the interface with the silicon substrate 1 that contribute to flicker noise are terminated with fluorine.

However, in Comparative Example 4, depending on the amount of boron to be implanted and the film thickness of the gate oxide film, a problem of boron oozing occurs, so that the variation in the threshold voltage of the PMOS may be several times to 10 times the normal value. is there. For this reason, in the comparative example 4, since PMOS does not satisfy the desired characteristics, it is not practical.
Further, in Comparative Example 4, by performing fluorine ion implantation only in the NMOS region as in Example 2, it is possible to reduce the NMOS flicker noise while avoiding the problem of boron leakage in the PMOS. However, the flicker noise of the PMOS cannot be reduced by fluorine. For this reason, the CMOS transistor with a small flicker noise which is the subject of the present invention, that is, the NMOS transistor and the PMOS are not both a CMOS transistor with a smaller flicker noise than before.

Next, regarding the flicker noise characteristics in Example 1 of the present invention, as shown in FIG. 6, NMOS Kf has a value of 1/10 to 1/4 that of Comparative Example 2, and As for Kf of PMOS, a value of 1/20 to 1/4 is obtained as compared with Comparative Example 2.
Further, the second embodiment of the present invention reduces the flicker noise of the PMOS by suppressing the amount of nitrogen introduced to be small, and the desired flicker noise can be obtained for both the NMOS and the PMOS without introducing fluorine by fluorine ion implantation into the PMOS. The conditions for obtaining the characteristics have been found. As shown in FIG. 6, the flicker noise characteristics in the second embodiment are such that the NMOS Kf has a value of 1/12 to 1/4 that of the comparative example 2 and the Kf of the PMOS is the comparative example 2. A value of 1/8 to 1/4 is obtained.

  As described above, in the present invention, the effect of reducing flicker noise of NMOS and PMOS by introducing fluorine into the silicon interface (the effect shown in Comparative Example 4) and the region of the surface layer of 1 to 2 nm of the gate oxide film by nitrogen plasma treatment The target effect can be obtained by the boron diffusion prevention measures and the PMOS flicker noise reduction effect (effect shown in Comparative Example 1) by introducing 2 to 10 atom% of nitrogen.

  The apparatus of the present invention can be suitably used in the field of analog / digital mixed LSI.

1 P-type silicon substrate (Psub)
2 Device isolation region 3 P well (Pwell)
4 Nwell
5 Gate oxide film 6 Polysilicon film 7 (NMOS) gate electrode 8 (PMOS) gate electrode 9 Side wall 10 (NMOS) source / drain 11 (PMOS) source / drain 12 Photoresist

Claims (4)

A semiconductor device comprising a CMOS transistor on a silicon substrate,
A gate insulating film provided on the silicon substrate and made of a silicon oxide film containing nitrogen and fluorine;
A gate electrode formed on the gate insulating film and made of polysilicon;
There is a peak of nitrogen concentration in the gate insulating film in the vicinity of the gate electrode, and the nitrogen concentration near the interface between the gate insulating film and the silicon substrate is 0.5 atom% or less,
A semiconductor device, wherein a fluorine concentration in the gate insulating film is 1 atom% or more, and dangling bonds at the interface between the gate insulating film and the silicon substrate are terminated by the fluorine. A semiconductor device comprising a CMOS transistor on a silicon substrate,
A gate insulating film provided on the silicon substrate and made of a silicon oxide film containing nitrogen and fluorine;
A gate electrode formed on the gate insulating film and made of polysilicon;
There is a peak of nitrogen concentration in the gate insulating film in the vicinity of the gate electrode, and the nitrogen concentration near the interface between the gate insulating film and the silicon substrate is 0.5 atom% or less,
In the NMOS transistor of the CMOS transistors,
The fluorine concentration in the gate insulating film is 1 atom% or more, and dangling bonds at the interface between the gate insulating film and the silicon substrate are terminated by the fluorine,
In the PMOS transistor among the CMOS transistors,
2. A semiconductor device according to claim 1, wherein the fluorine concentration in the gate insulating film is 1 atom% or less. A method of manufacturing a semiconductor device for manufacturing a CMOS transistor on a silicon substrate,
Forming a gate insulating film on the silicon substrate;
Performing nitrogen plasma treatment on the gate insulating film to introduce nitrogen;
Forming a gate electrode made of polysilicon on the gate insulating film introduced with nitrogen;
Implanting fluorine ions into the gate insulating film;
And a step of performing a heat treatment after fluorine ions are implanted into the gate insulating film,
In the step of introducing nitrogen,
The condition for introducing nitrogen is such that there is a peak of nitrogen concentration in the gate insulating film in the vicinity of the gate electrode, and the nitrogen concentration in the vicinity of the interface between the gate insulating film and the silicon substrate is 0.5 atom% or less. Set it,
In the step of implanting fluorine ions,
A method for manufacturing a semiconductor device, characterized in that fluorine ion implantation conditions are set so that a fluorine concentration in the gate insulating film is 1 atom% or more . A method of manufacturing a semiconductor device for manufacturing a CMOS transistor on a silicon substrate,
Forming a gate insulating film on the silicon substrate;
Performing nitrogen plasma treatment on the gate insulating film to introduce nitrogen;
Forming a gate electrode made of polysilicon on the gate insulating film introduced with nitrogen;
Forming a pattern that opens above the region of the CMOS transistor where the NMOS transistor is formed and covers the region of the CMOS transistor where the PMOS transistor is formed;
Implanting fluorine ions into the gate insulating film using the pattern as a mask;
And a step of performing a heat treatment after fluorine ions are implanted into the gate insulating film,
In the step of introducing nitrogen,
The condition for introducing nitrogen is such that there is a peak of nitrogen concentration in the gate insulating film in the vicinity of the gate electrode, and the nitrogen concentration in the vicinity of the interface between the gate insulating film and the silicon substrate is 0.5 atom% or less. Set it,
In the step of implanting fluorine ions,
A method of manufacturing a semiconductor device, characterized in that fluorine ion implantation conditions are set so that a fluorine concentration in the gate insulating film in a region where the NMOS transistor is formed is 1 atom% or more .

Images