JP5632186B2 - 稠密スロット透過型電極体を用いたプラズマ処理装置 - Google Patents

稠密スロット透過型電極体を用いたプラズマ処理装置 Download PDF

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Publication number
JP5632186B2
JP5632186B2 JP2010096869A JP2010096869A JP5632186B2 JP 5632186 B2 JP5632186 B2 JP 5632186B2 JP 2010096869 A JP2010096869 A JP 2010096869A JP 2010096869 A JP2010096869 A JP 2010096869A JP 5632186 B2 JP5632186 B2 JP 5632186B2
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Japan
Prior art keywords
slot opening
region
discharge
electrode layer
processing apparatus
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JP2010096869A
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English (en)
Japanese (ja)
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JP2011228475A5 (enExample
JP2011228475A (ja
Inventor
鈴木　敬三
敬三 鈴木
武井　健
健 武井
臼井　建人
建人 臼井
雅美 上林
雅美 上林
伸幸 根岸
伸幸 根岸
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2010096869A priority Critical patent/JP5632186B2/ja
Priority to US12/855,163 priority patent/US20110253313A1/en
Publication of JP2011228475A publication Critical patent/JP2011228475A/ja
Publication of JP2011228475A5 publication Critical patent/JP2011228475A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010096869A 2010-04-20 2010-04-20 稠密スロット透過型電極体を用いたプラズマ処理装置 Active JP5632186B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010096869A JP5632186B2 (ja) 2010-04-20 2010-04-20 稠密スロット透過型電極体を用いたプラズマ処理装置
US12/855,163 US20110253313A1 (en) 2010-04-20 2010-08-12 Plasma processing apparatus using transmission electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010096869A JP5632186B2 (ja) 2010-04-20 2010-04-20 稠密スロット透過型電極体を用いたプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011228475A JP2011228475A (ja) 2011-11-10
JP2011228475A5 JP2011228475A5 (enExample) 2013-05-23
JP5632186B2 true JP5632186B2 (ja) 2014-11-26

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ID=44787281

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JP2010096869A Active JP5632186B2 (ja) 2010-04-20 2010-04-20 稠密スロット透過型電極体を用いたプラズマ処理装置

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US (1) US20110253313A1 (enExample)
JP (1) JP5632186B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102872895B1 (ko) * 2020-10-30 2025-10-17 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11887815B2 (en) * 2021-02-03 2024-01-30 Tokyo Electron Limited Plasma processing system and method using radio frequency (RF) and microwave power

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3750115T2 (de) * 1986-10-20 1995-01-19 Hitachi Ltd Plasmabearbeitungsgerät.
JPH01109699A (ja) * 1987-10-23 1989-04-26 Japan Synthetic Rubber Co Ltd プラズマ処理装置
US6059922A (en) * 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
JP3430053B2 (ja) * 1999-02-01 2003-07-28 東京エレクトロン株式会社 プラズマ処理装置
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
JP5457754B2 (ja) * 2009-08-07 2014-04-02 株式会社日立ハイテクノロジーズ 透過型電極体を用いたプラズマ処理装置

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US20110253313A1 (en) 2011-10-20
JP2011228475A (ja) 2011-11-10

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