JP5626649B2 - 電磁波吸収材料 - Google Patents
電磁波吸収材料 Download PDFInfo
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- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
- C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Inorganic Compounds Of Heavy Metals (AREA)
Description
2 バインダー
3 チタニアナノシート
特許文献3:特開2004−255684号公報
実際の操作としては、基板を[1]バインダー溶液に浸漬→[2]純水で洗浄→[3]チタニアナノシートのゾル溶液に浸漬→[4]純水で洗浄するという一連の操作を1サイクルとしてこれを必要回数分反復することで、バインダーとチタニアナノシートを交互積層することができる。
本実施例においては、Coをチタン格子位置に置換した層状チタン酸化物(たとえば、K0.4Ti0.8Co0.2O2)を出発原料に、チタニアナノシート(Ti0.8Co0.2O2)からなる透明磁性体(3)を作製し、図1に示したように、石英ガラス基板(1)上に、前記チタニアナノシート(3)とカチオン性ポリマー(2)であるポリジアリルジメチルアンモニウム塩化物(PDDA)とが交互に積層した磁性体膜を以下のように形成して、電磁波吸収体膜を作製した。
[2]Milli-Q純水で充分に洗浄
[3]撹拌した上記ナノシートゾル溶液中に浸漬
[4]1/3時間経過後にMilli-Q純水で充分に洗浄
図2は、こうして得られたTi0.8Co0.2O2チタニアナノシートとPDDAが交互に10層積層した、膜厚14nmの電磁波吸収体膜における紫外・可視吸収スペクトルと光学写真である。チタニアナノシートからなる電磁波吸収体膜は、量子サイズ効果に起因した広いバンドギャップ(300nm)を有し、石英ガラス基板に作製したサンプルは、図2に示したように、波長350nm以上では、吸光度0.15以下という、可視光域の広い領域において透明であった。
本実施例においては、CoおよびFeをチタン格子位置に置換した層状チタン酸化物(K0.4Ti0.75Co0.15Fe0.1O2)を出発原料に、チタニアナノシート(Ti0.75Co0.15Fe0.1O2)からなる透明磁性体膜を作製し、石英ガラス基板上に、前記チタニアナノシート(3)とバインダー(2)としてのPDDAとが交互に積層した電磁波吸収体膜を作製した。
本実施例においては、実施例2において作製したチタニアナノシート(Ti0.75Co0.15Fe0.1O2)からなる透明磁性体を用い、スピンコート法により数μm厚の電磁波吸収体膜を作製した。
[2]スピンコート法により基板面上に均一に塗布
[3]室温、乾燥空気ガス還流下で乾燥
図6は、このようにして得たTi0.75Co0.15Fe0.1O2チタニアナノシートからなる、膜厚2μm(ナノシートの積層数は、500以上と思われる)の電磁波吸収体膜に対し、実施例1で記載の自由空間法によりその電磁波吸収特性を測定した結果である。図6からわかるように、この電磁波吸収体試料は、2.4GHz付近を中心に、0.01GHzでは、吸収率1.08dB、0.9GHz及び6.4GHzでは、吸収率10dB、10.5GHzでは、吸収率5.1dBと、0.01〜15GHz帯域で安定した電磁波吸収が起きることが確認された。さらに、実施例2で記載した膜厚14nmの電磁波吸収体試料と比較し、本実施例記載の膜厚2μmの電磁波吸収体試料では、磁気共鳴周波数が低周波数側にシフトし、特に0.9〜6.4GHz帯においては10dB以上の高い電磁波吸収効果を示す材料の作製が可能となった。従来の電磁波吸収体では、厚さが増大することでその吸収帯域が変化して対応可能な吸収帯域が制限されていたが、本願発明の電磁波吸収体試料では、厚さを変えても広い周波数帯域で安定した電磁波吸収が起きるという特異な電磁波吸収挙動が維持された。
Claims (5)
- 磁性体膜を主たる構成材とする電磁波吸収材料であって、前記磁性体膜は、3d磁性金属元素をチタン格子位置に置換したチタニアナノシートとバインダーとを含み、
前記チタニアナノシートは、その構成最小単位であるチタン-酸素八面体ブロック及び3d磁性金属元素-酸素八面体ブロックが二次元結合した単層構造であり、
前記チタニアナノシートは、前記磁性体膜中で前記チタニアナノシート同士が接しているか近接している状態に配列され、
前記磁性体膜の膜厚は70nm以上2μm以下である
ことを特徴とする電磁波吸収材料。 - 請求項1に記載の電磁波吸収材料において、前記チタニアナノシートは、以下の組成式で表される層状チタン酸化物のいずれか又はその水和物を剥離して得られたものであることを特徴とする電磁波吸収材料。
組成式:AxTi1−yMyO2
(Aは、H、Li、Na、K、Rb、Csから選ばれる少なくとも1種であり、0<x≦1;Mは、Cr,Mn,Fe,Co,Niから選ばれる少なくとも1種であり、0<y<1)。 - 請求項1または2に記載の電磁波吸収材料において、前記バインダーがゼラチンであることを特徴とする電磁波吸収材料。
- 前記磁性体膜が、基材上に形成されていることを特徴とする請求項1から3のいずれかに記載の電磁波吸収材料。
- 請求項1から4のいずれかに記載の電磁波吸収材料において、前記チタニアナノシートが、Co、Fe同時置換チタニアナノシートであることを特徴とする電磁波吸収材料。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010516872A JP5626649B2 (ja) | 2008-06-10 | 2009-06-10 | 電磁波吸収材料 |
Applications Claiming Priority (4)
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JP2008151636 | 2008-06-10 | ||
JP2008151636 | 2008-06-10 | ||
PCT/JP2009/060636 WO2009151085A1 (ja) | 2008-06-10 | 2009-06-10 | 電磁波吸収材料 |
JP2010516872A JP5626649B2 (ja) | 2008-06-10 | 2009-06-10 | 電磁波吸収材料 |
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JPWO2009151085A1 JPWO2009151085A1 (ja) | 2011-11-17 |
JP5626649B2 true JP5626649B2 (ja) | 2014-11-19 |
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JP2010516872A Expired - Fee Related JP5626649B2 (ja) | 2008-06-10 | 2009-06-10 | 電磁波吸収材料 |
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US (2) | US20110183133A1 (ja) |
EP (1) | EP2306799B1 (ja) |
JP (1) | JP5626649B2 (ja) |
WO (1) | WO2009151085A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4831629B2 (ja) * | 2005-12-13 | 2011-12-07 | 独立行政法人物質・材料研究機構 | 磁性人工超格子とその製造方法 |
CN203353037U (zh) * | 2012-12-28 | 2013-12-18 | 中怡(苏州)科技有限公司 | 无线模块 |
KR101549989B1 (ko) | 2014-05-30 | 2015-09-04 | (주)창성 | W-band 주파수 영역대의 전자파 흡수체와 그 제조방법 |
JP6606821B2 (ja) * | 2014-11-21 | 2019-11-20 | 富士通株式会社 | 層状物質の積層構造及びその製造方法 |
KR20170016145A (ko) * | 2015-08-03 | 2017-02-13 | 삼성전자주식회사 | 도전체 제조 방법, 이로부터 제조된 도전체, 및 이를 포함하는 전자 소자 |
JP6654319B2 (ja) * | 2016-03-15 | 2020-02-26 | 国立大学法人千葉大学 | 構造色発現材料及びセンサ |
WO2020019675A1 (zh) * | 2018-07-27 | 2020-01-30 | 深圳光启尖端技术有限责任公司 | 吸波透波一体化装置及天线罩 |
US10559566B1 (en) * | 2018-09-17 | 2020-02-11 | International Business Machines Corporation | Reduction of multi-threshold voltage patterning damage in nanosheet device structure |
JP7252614B2 (ja) * | 2019-05-24 | 2023-04-05 | 国立研究開発法人物質・材料研究機構 | ナノワイヤ構造体、その製造方法、イオン交換材料、光触媒材料、および、金属固定化材料 |
FR3119252B1 (fr) * | 2021-01-26 | 2023-01-06 | Commissariat A L’Energie Atomique Et Aux Energies Alternatives | Dispositif de protection et de supervision d’un système électronique comprenant au moins un composant électronique. Procédé associé de protection et de supervision de l’intégrité du système électronique et du dispositif, et de brouillage d’attaques. |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006199556A (ja) * | 2005-01-24 | 2006-08-03 | National Institute For Materials Science | チタニア磁性半導体ナノ薄膜及びその製造方法 |
WO2007069638A1 (ja) * | 2005-12-13 | 2007-06-21 | National Institute For Materials Science | 磁性人工超格子とその製造方法 |
WO2007094244A1 (ja) * | 2006-02-13 | 2007-08-23 | National Institute For Materials Science | ナノ超薄膜誘電体とその製造方法及びナノ超薄膜誘電体素子 |
JP2007297236A (ja) * | 2006-04-28 | 2007-11-15 | Hitachi Cable Ltd | ガラス板 |
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JP3513589B2 (ja) * | 2000-03-24 | 2004-03-31 | 独立行政法人物質・材料研究機構 | チタニア超薄膜およびその製造方法 |
JP3569763B2 (ja) * | 2000-08-30 | 2004-09-29 | 独立行政法人 科学技術振興機構 | 二酸化チタン・コバルト磁性膜及びその製造方法 |
JP3726140B2 (ja) * | 2003-02-26 | 2005-12-14 | 独立行政法人物質・材料研究機構 | 高品位チタニアナノシート超薄膜とその製造方法 |
US20080311429A1 (en) * | 2007-06-15 | 2008-12-18 | Tadao Katsuragawa | Magnetic film, magnetic recording/ reproducing device, and polarization conversion component |
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2009
- 2009-06-10 JP JP2010516872A patent/JP5626649B2/ja not_active Expired - Fee Related
- 2009-06-10 EP EP09762515.6A patent/EP2306799B1/en not_active Not-in-force
- 2009-06-10 WO PCT/JP2009/060636 patent/WO2009151085A1/ja active Application Filing
- 2009-06-10 US US12/997,338 patent/US20110183133A1/en not_active Abandoned
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2012
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JP2006199556A (ja) * | 2005-01-24 | 2006-08-03 | National Institute For Materials Science | チタニア磁性半導体ナノ薄膜及びその製造方法 |
WO2007069638A1 (ja) * | 2005-12-13 | 2007-06-21 | National Institute For Materials Science | 磁性人工超格子とその製造方法 |
WO2007094244A1 (ja) * | 2006-02-13 | 2007-08-23 | National Institute For Materials Science | ナノ超薄膜誘電体とその製造方法及びナノ超薄膜誘電体素子 |
JP2007297236A (ja) * | 2006-04-28 | 2007-11-15 | Hitachi Cable Ltd | ガラス板 |
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US20110183133A1 (en) | 2011-07-28 |
JPWO2009151085A1 (ja) | 2011-11-17 |
US20120292554A1 (en) | 2012-11-22 |
WO2009151085A1 (ja) | 2009-12-17 |
EP2306799A4 (en) | 2014-09-03 |
EP2306799B1 (en) | 2018-10-10 |
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