JP5620747B2 - Vacuum deposition equipment - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus, and more particularly to a vacuum deposition apparatus capable of forming a uniform and defect-free metal deposition film on an object to be deposited.

In a vacuum deposition apparatus, a deposition source and a deposition target are arranged in a vacuum chamber, and the deposition source is heated and the deposition source is melted and evaporated in a state where the inside of the vacuum chamber is decompressed, or the deposition source Vaporize by sublimating. The vaporized substance is emitted straight from the vapor deposition source in the normal direction (the vaporized substance goes straight because the emission space is kept in a vacuum), and the vaporized substance is placed on the surface of the vapor deposition target disposed opposite to the vapor deposition source. Adhered and deposited.
In this case, since the vaporized material from the vapor deposition source is released straightly in the normal direction, there are many vaporized materials that do not travel toward the vapor deposition target and do not adhere to the surface of the vapor deposition target, and the yield of the vapor deposition source increases. It has been difficult to efficiently obtain a uniform vapor deposition film with low defects, a low vapor deposition rate on the surface of the vapor deposition target, and few defects such as pinholes and voids.

  As a technique for solving this, in Patent Document 1, a space where a vapor deposition source and a deposition target disposed in a vacuum chamber face each other is surrounded by a cylindrical body, and the cylindrical body is heated at a temperature at which a substance of the vapor deposition source is vaporized. Then, a vacuum deposition apparatus is proposed in which a substance vaporized from a deposition source is passed through a cylindrical body and deposited on the surface of the deposition target. FIG. 2 of Patent Document 1 shows an example, and a cylindrical body (cylinder body) that opens up and down in the vacuum chamber 1 (the reference numeral of Patent Document 1 is used as it is. The same applies to the next Patent Document 2). 5 is disposed, and a heater 21 is wound around the cylindrical body 5 so that the cylindrical body 5 can be heated. The vapor deposition source 2 is disposed in the lower part of the cylindrical body 5 and is heated by the heating element 24 so that the vapor deposition source 2 (see FIG. 1 of Patent Document 1) can be vaporized. The deposition target (substrate) 3 is disposed above the opening at the upper end of the cylindrical body 5. Reference numeral 20 denotes a vacuum pump that evacuates the vacuum chamber 1 to create a vacuum atmosphere.

  Moreover, in patent document 2, the movement amount of the vaporization substance from a vapor deposition source (evaporation source) to a to-be-deposited body can be controlled correctly, and control of a vapor deposition rate is not influenced by the radiant heat from a cylindrical body. Discloses a vacuum deposition apparatus that can easily perform the above. A cylindrical body 4 in which the evaporation source 2 and the deposition target 3 are arranged in the vacuum chamber 1 and the space between the evaporation source 2 and the deposition target 3 is heated at a temperature at which the substance of the evaporation source 2 is vaporized. The vacuum evaporation apparatus is configured such that the substance 9 which is enclosed and vaporized from the evaporation source 2 is passed through the cylindrical body 4 to reach the surface of the evaporation target body 3 to be evaporated. The substance 9 vaporized from the evaporation source 2 passes through the opening 5 of the evaporation source storage chamber 24 and then reaches the surface of the deposition target through the cylindrical body 4 so that the opening degree of the opening 5 can be adjusted. The opening / closing means 6, the deposition thickness measuring means 7 for depositing the substance 9 vaporized from the evaporation source 2 and measuring the deposition thickness, and the opening degree of the opening / closing means 6 according to the deposition thickness measured by the deposition thickness measuring means 7 And an opening / closing control means 8 for adjusting.

JP 2002-80961 A JP 2008-156726 A

In the apparatus of Patent Document 1, the amount of vaporized substance moving from the vapor deposition source to the vapor deposition target cannot be accurately controlled, and the vapor deposition rate can be easily controlled depending on the radiant heat from the cylindrical body. It has the disadvantage that it cannot.
The apparatus of Patent Document 2 improves the disadvantage of Patent Document 1, and the substance evaporated from the deposition source reaches the deposition target through the cylindrical body after passing through the opening, and is measured by the deposition thickness measuring means. The amount of the vaporized substance passing through the opening can be controlled by controlling the opening / closing means for adjusting the opening degree of the opening according to the deposited thickness, and the amount of vaporized material passing through the opening can be controlled. Regardless of the influence, it is possible to easily control the deposition rate by controlling the amount of the vaporized material transferred from the deposition source to the deposition target in accordance with the deposition thickness. However, since the cylindrical body is used, the diffusion of the vaporized material after passing through the cylindrical body is limited, and it is difficult to adjust the distance between the vapor deposition source and the vapor deposition target, and vapor deposition is not performed completely. There are insufficient solutions for defects such as pinholes and voids generated in the deposition target due to a small amount of molten metal scattered from the source.

  An object of the present invention is to provide a vacuum vapor deposition apparatus that improves the above-mentioned problems and can form a homogeneous and defect-free metal vapor deposition film on a vapor deposition target.

  In view of the above circumstances, as a result of intensive studies by the present inventors, the substance vaporized from the opening of the crucible, which is the vapor deposition source in the vacuum evaporation apparatus, is coaxially with the small diameter portion directly below the crucible opening. After passing through the metal conical cylinder having an optimal shape heated to a temperature at which the vaporized substance that is installed is kept in a vaporized state, it is discharged into the space between the metal conical cylinder and the deposition target, It has been found that by reaching the surface of the vapor deposition body, a uniform and defect-free metal vapor deposition film can be obtained on the vapor deposition body.

Furthermore, in order to obtain a highly uniform vapor deposition film that is particularly homogeneous and free of pinholes on the surface of the vapor deposition target, the distance between the surface of the vapor deposition target and the crucible opening of the vapor deposition source, and immediately above the crucible opening. It has been found that the length of the slope of the metal conical cylindrical body placed with the small diameter portion down and the cone angle of the conical cylindrical body are important factors.
By maintaining these elements in an optimal relationship, the material vaporized from the crucible opening reaches the surface of the vapor deposition body while maintaining the vaporized state through the metal conical cylindrical body, there is no pinhole, A uniform vapor deposition film can be formed over a wide range in the width direction of the deposition target.

The metal of the vapor deposition source in the crucible is not vaporized when all of the metal leaves the crucible opening, but part of it becomes small particles of molten metal due to fluctuations in the temperature in the crucible and the degree of vacuum in the apparatus. When the air scatters from the crucible opening and reaches the surface of the deposition target, it becomes a main cause of forming defects such as pinholes and voids in the deposition film and the deposition target.
In order to avoid this, the molten metal spattered by the metal conical cylindrical body placed with the small diameter portion down directly above the opening of the crucible where the vaporized metal is heated to a temperature that maintains the vaporized state. It is necessary to completely capture the metal particles and re-heat them to vaporize them and release them into the space between the metal conical cylinder and the vapor-deposited body. In order to be completely captured by the cylindrical body, it is necessary to produce a metal conical cylindrical body with the molten metal particles and a material with good wettability.

  The deposition source is a kind selected from the group consisting of silver, aluminum, tin and copper, and the material of the metal conical cylindrical body is a kind of metal selected from the group consisting of chromium, molybdenum and tungsten. It has also been found that a metal vapor deposition film that exhibits the above-mentioned effects efficiently and can be formed on the deposition target body without any defects.

Based on these findings, the vacuum vapor deposition apparatus of the present invention has a vapor deposition source and a vapor-deposited body arranged in a vacuum chamber, and a substance evaporated from the vapor deposition source reaches the surface of the vapor-deposited body and is vapor deposited. In the vacuum vapor deposition apparatus, the substance vaporized from the opening of the circular crucible in which the vapor deposition source was placed was placed directly above the opening of the circular crucible with the small diameter portion down and the axis centered with the circular crucible. After passing through the metal conical cylinder heated to a temperature at which the vaporized substance maintains a vaporized state, the material is discharged into the space between the metal conical cylinder and the deposition target and reaches the surface of the deposition target. When the distance between the opening of the circular crucible and the deposition target is D, the slope length L of the metal conical cylindrical body is 0.05D to 0.5D, and the metal cone angle θ is 45 ° to 75 ° der conical tubular body is, the Genus diameter bottom of the conical tubular member is in contact with the opening of the circular crucible, an inner diameter, and wherein the inside diameter identical der Rukoto openings of the circular crucible.

  The substance evaporated from the opening of the crucible passes through the metal conical cylindrical body heated to a temperature that maintains the vaporized state, and is then discharged from the large diameter portion into the space between the deposition target, thereby vapor deposition. It is possible to form a wide range of uniform deposited film on the surface in the width direction of the body, and the metal cone cylindrical body completely captures the molten metal particles scattered from the crucible opening, reheats and vaporizes In this state, since the large-diameter portion is discharged into the space between the vapor-deposited bodies, defects such as pinholes and voids generated in the vapor-deposited film and the vapor-deposited bodies can be prevented. In order to maximize the effect of the metal conical cylinder, the crucible is preferably a circular crucible.

D is appropriately selected according to conditions such as the vacuum chamber, crucible inner diameter, crucible heating device, type of material vaporized from the evaporation source, etc., but if D is too small, the molten metal scattered from the crucible opening It becomes difficult to completely capture the small particles, and if D is too large, there is a risk that the vaporized material will not reach the surface of the deposition target.
When L is less than 0.05D, the distance between the upper end of the metal conical cylindrical body and the deposition target is increased, and the vaporized substance cannot maintain the vaporized state, resulting in reduced uniformity of the deposited film thickness. In addition, the function of capturing the scattered molten metal particles with the metal conical cylinder is also reduced.
When L exceeds 0.5D, not only the effect is saturated, but also the metal conical cylinder becomes large, and the cost of equipment increases.
Even if the cone angle θ is less than 45 ° or the cone angle θ exceeds 75 °, the function of completely capturing and vaporizing the scattered molten metal particles is deteriorated. Here, the cone angle θ refers to the inclination angle of the inner peripheral slope with respect to the radial direction of the upper end of the metal conical cylindrical body.
In order to maximize the effect of the metal conical cylinder, the crucible is preferably a circular crucible, and the inner diameter of the small diameter bottom portion of the metal conical cylinder is in contact with the crucible opening, and the inner diameter is In order to completely capture and vaporize the molten metal particles, the inner diameter of the crucible opening is preferably the same.

Furthermore, the vacuum deposition apparatus of the present invention is a kind in which the deposition source is selected from the group consisting of silver, aluminum, tin and copper, and the material of the metal conical cylinder is selected from the group consisting of chromium, molybdenum and tungsten. It is characterized by being a kind of metal.
The metal of the vapor deposition source is a kind selected from the group consisting of silver, aluminum, tin and copper, and the material of the metal conical cylinder is a kind of metal selected from the group consisting of chromium, molybdenum and tungsten The wettability between the metal conical cylinder and the metal of the vapor deposition source is maximized, and a uniform and defect-free metal vapor deposition film can be formed on the vapor deposition target in a short time.

  With the vacuum vapor deposition apparatus of the present invention, a metal vapor deposition film that is homogeneous and has no defects can be formed on the deposition target.

It is the schematic which shows one Embodiment of the vacuum evaporation system of this invention.

A vacuum deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view showing an embodiment of a vacuum vapor deposition apparatus 1 according to the present invention. A vacuum chamber 2 is evacuated by a vacuum pump 22 so that the pressure can be reduced to a vacuum state. In the lower part of the vacuum chamber 2, a crucible 6 in which a vapor deposition source 5 heated by a coil 4 of a high-frequency induction heating device 3 is placed, and a circular crucible 6 with a small-diameter portion down immediately above and a concentric shaft. A metal conical cylindrical body 9 heated by the coil 8 of the heating device 7 is installed on the top. A deposition target 10 such as a substrate on which vapor deposition is performed is arranged above the metal conical cylindrical body 9 with a space 15 interposed therebetween.
Although the vapor deposition source 5 is not specifically limited, It is especially preferable that they are silver, aluminum, tin, or copper. The material of the metal conical cylindrical body 9 is not particularly limited, but when the vapor deposition source 5 is silver, aluminum, tin, or copper, it may be chromium, molybdenum, or tungsten from the viewpoint of wettability with these metals. Molybdenum is particularly preferred. The body to be deposited 10 is not particularly limited, but it is preferable to use a plastic film having an appropriate material and thickness.
When the distance between the opening 11 of the crucible 6 and the deposition target 10 is D, the length L of the inclined surface 18 of the metal conical cylinder 9 is 0.05D to 0.5D, and the metal conical cylinder 9 Is set to 45 ° to 75 °.
D is appropriately selected according to conditions such as the vacuum chamber 2, the inner diameter of the crucible 6, the high-frequency induction heating device 3, and the type of substance vaporized from the vapor deposition source 5, but if D is too small, the opening of the crucible 6 It becomes difficult to completely capture the molten metal particles 17 scattered from 11, and if D is too large, there is a risk that the vaporized substance will not reach the surface of the deposition target 10 completely.
When L is less than 0.05D, the distance between the upper end 19 of the metal conical cylindrical body 9 and the space 14 between the vapor-deposited bodies 10 becomes long, and the vaporized substance can no longer maintain the vaporized state. The uniformity of the film thickness is reduced, and the function of capturing the scattered molten metal particles 17 by the metal conical cylinder 9 is also reduced.
When L exceeds 0.5D, not only the effect is saturated, but also the metal conical cylindrical body 9 becomes large, and the cost of equipment increases.
Even if the cone angle θ is less than 45 ° or the cone angle θ exceeds 75 °, the function of completely capturing and vaporizing the scattered molten metal particles 17 is deteriorated. The cone angle θ refers to an inclination angle of the inner inclined surface 18 with respect to the radial direction of the upper end 19 of the metal conical cylindrical body 9.
Further, the small diameter bottom portion 12 of the metal conical cylindrical body 9 is in contact with the upper end portion 13 of the crucible 6, and the inner diameter of the metal conical cylindrical body 9 is sufficient to capture and vaporize the molten metal particles 17. The inner diameter is preferably the same.

When performing vapor deposition with such a vacuum vapor deposition apparatus 1, first, the vapor deposition source 5 is filled and set in the crucible 6, and the vapor deposition target 9 is placed at a distance D from the opening 11 of the crucible 6. 6 and set horizontally with the opening 11.
Next, the vacuum pump 22 is operated to reduce the pressure in the vacuum chamber 2 to a vacuum state, the coil 4 is heated to heat the vapor deposition source 5 in the crucible 6, and the coil 8 is heated by the heating device 7 to form a metal. The conical cylinder 9 is heated. The heating temperature of the metal conical cylindrical body 9 is set to a temperature at which the vaporized material from the vapor deposition source 5 evaporates and vaporizes again even if it adheres to the metal conical cylindrical body 9 and is not decomposed.
When the vacuum chamber 2 is depressurized and the vapor deposition source 5 is heated as described above, the vapor deposition source 5 is vaporized by melting, evaporation, or sublimation. This vaporized material generated from the vapor deposition source 5 is introduced into the metal conical cylindrical body 9 through the opening 11 of the crucible 6, travels through the metal conical cylindrical body 9, and is conical in the space 14 between the vapor deposition bodies 10. Are spread uniformly in the width direction of the deposition target 10 and reach the surface to form a deposited film 15 to form a silver deposited plastic film 16.
A small amount of molten metal particles 17 scattered from the vapor deposition source 5 through the opening 11 of the crucible 6 are captured by the metal conical cylindrical body 9 and reheated to be released into the space 14 between the vapor deposition bodies as a vaporized state. .
In order to completely capture the molten metal particle 17 with the metal conical cylindrical body 9, it is necessary to produce the conical cylindrical body 9 with the molten metal particle 14 and a metal having good wettability.

In the vacuum deposition apparatus of the present invention, using a polyester film having a length of 100 mm × width of 100 mm × thickness of 4 μm as a deposition target, using silver as a deposition source in a graphite circular crucible having an inner diameter of 100 mm × height of 123 mm, Using a molybdenum conical cylinder, D, L, and cone angle θ are changed as shown in Table 1 to produce a silver-deposited polyester film in which silver is deposited with a thickness of 80 nm. The presence or absence of holes was measured. A comparative example in which D, L, and θ are out of the scope of the present invention was also produced.
The deposited film thickness was obtained by measuring the surface resistance value with a film resistance measuring device by a four-point measurement method and converting the value into a film thickness.
There are three places where the deposited film thickness is measured: the center point of the deposited film (length 100 mm × width 100 mm) and the upper and lower 90 mm points.
Presence / absence of pinholes was determined by applying ultraviolet light from the back side of the sample film and visually observing with a 10 × magnifier. The case where there were no pinholes was rated as ◯, the case where there were no more than 10 pinholes, and the case where there were 10 or more pinholes as x.

From the results of Table 1, the metal vapor deposition film formed on the surface of the deposition target manufactured by the vacuum vapor deposition apparatus of the present invention is a homogeneous metal vapor deposition film with no pinholes and little variation in film thickness. Recognize.
In Comparative Example 5, the cone angle is 90 °, that is, a cylindrical body is used.

  Although the embodiment of the present invention has been described above, the present invention is not limited to this description and can be appropriately changed without departing from the technical idea of the present invention.

DESCRIPTION OF SYMBOLS 1 Vacuum evaporation apparatus 2 Vacuum chamber 3 High frequency induction heating apparatus 4 Coil 5 Deposition source 6 Circular crucible 7 Heating apparatus 8 Coil 9 Metal conical cylindrical body 10 Deposited body 11 Opening part 12 Small diameter bottom part 13 Upper end part 14 Space 15 Deposition film 16 Silver-deposited plastic film 17 Molten metal particles 18 Metal conical cylindrical slope 19 Upper end 22 Vacuum pump

Claims (2)

In a vacuum vapor deposition apparatus in which a vapor deposition source and a vapor deposition body are arranged in a vacuum chamber, and a material vaporized from the vapor deposition source reaches the surface of the vapor deposition body and vapor deposition is performed, a circular crucible in which the vapor deposition source is placed the vaporized material from the opening of the vaporized material of the small diameter portion and the bottom is installed to fit the circular crucible and the axis immediately above the opening of the circular crucible is heated to a temperature to maintain the state of vaporization after passing through the metal conical tubular body, and discharged into the space between the metal conical tubular body and the deposition object, evaporated allowed to reach the surface of the deposition object, the opening and the object of the circular crucible When the distance from the vapor deposition body is D, the slope length L of the metal conical cylindrical body is 0.05D to 0.5D, and the cone angle θ of the metal conical cylindrical body is 45 ° to 75 °. der is, the small-diameter bottom portion of the metal cone tubular body opening of the circular crucible In contact, an inner diameter, a vacuum deposition apparatus, wherein the inside diameter identical der Rukoto openings of the circular crucible. The deposition source is a kind selected from the group consisting of silver, aluminum, tin, and copper, and the material of the metal conical cylinder is a kind of metal selected from the group consisting of chromium, molybdenum, and tungsten. The vacuum deposition apparatus according to claim 1.

Images