CN102373421A - Vacuum evaporation device - Google Patents
Vacuum evaporation device Download PDFInfo
- Publication number
- CN102373421A CN102373421A CN2011102275236A CN201110227523A CN102373421A CN 102373421 A CN102373421 A CN 102373421A CN 2011102275236 A CN2011102275236 A CN 2011102275236A CN 201110227523 A CN201110227523 A CN 201110227523A CN 102373421 A CN102373421 A CN 102373421A
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- cylindrical body
- circular cone
- metal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention provides a vacuum evaporation device by which an even metal evaporation film having a high reflectivity and no-defect can be formed on an evaporated body. An evaporation source and an evaporated body are arranged in a vacuum chamber, so that the vacuum evaporation device enables an object gasified by the evaporation source to be reached to the surface of the evaporated body. The vacuum evaporation device is characterized in that the object gasified from the opening of a furnace in which the evaporation source is put is discharged to a space between a metal cone shaped body and the evaporated body after flows through the metal cone shaped body and reaches the surface of the evaporated body to be evaporated. The metal cone shaped body is arranged right above the opening part of the furnace, is butted the axis of the furnace by making a small diameter part downwards and is heated to a temperature at which the gasified object can maintain a gasification state, when the distance between the opening part of the furnace and the evaporated body is D, the inclined surface length of the metal cone shaped body is between 0.05D and 0.5 D, and the cone angle theta of the metal cone shaped body is between 45 degrees and 75 degrees.
Description
Technical field
The present invention relates to vacuum deposition apparatus, especially particularly, relate to the vacuum deposition apparatus that can form even and flawless metal evaporation film on by the vapor deposition body.
Background technology
In vacuum deposition apparatus, evaporation source be evaporated body and be configured in the Vakuumkammer, under the state with the internal vacuum chamber decompression, the heating vapor deposition source makes vapor deposition source fusion and evaporation or makes the vapor deposition source distillation and make its gasification.Ground emits (owing to emit the space remain vacuum, so the gasification substance straight ahead) to the material of gasification from vapor deposition source along normal direction straight ahead formula, attached to the vapor deposition source subtend dispose by the surface of vapor deposition body and by vapor deposition.
In this case; From the gasification substance of vapor deposition source since along normal direction straight ahead formula emit; Therefore not towards by before the vapor deposition body and then be not attached also many by the gasification substance of vapor deposition surface; The yield rate of vapor deposition source reduces, to slack-off the time, being difficult to effectively obtain the few and uniform vapor-deposited films of defective such as pin hole, hole by the evaporation rate of vapor deposition surface.
As the technology that addresses this problem; Following vacuum deposition apparatus has been proposed in patent documentation 1: with cylindrical body surround the vapor deposition source that is configured in the Vakuumkammer with by the opposed space of vapor deposition body; And with the temperature of vapor deposition source gasification substance heating cylindrical body, make from the material of vapor deposition source gasification through in the cylindrical body and vapor deposition by the surface of vapor deposition body.Fig. 2 of patent documentation 1 representes the one of which example, and Vakuumkammer 1 (directly uses the symbol in the patent documentation.Below patent documentation 2 too) in be equipped with the cylindrical body (cylindrical shell) 5 of upper and lower opening, cylindrical body 5 is wound with well heater 21, thereby can heat cylindrical body 5.Dispose vapor deposition source 2 in the bottom of this cylindrical body 5, can make vapor deposition source 2 (Fig. 1 of referenced patent document 1) gasification with heating element 24 heating.Be configured at the top of the opening of cylindrical body 5 upper ends by vapor deposition body (substrate) 3.20 for being used to make the vacuum pump of Vakuumkammer 1 interior exhaust becoming vacuum atmosphere.
In addition, in patent documentation 2, following vacuum deposition apparatus being disclosed: can correctly control from vapor deposition source (evaporation source) to by the amount of movement of the gasification substance of vapor deposition body, need not to be limited by the radiation heat from cylindrical body, can easily control evaporation rate.This vacuum deposition apparatus is: configuration evaporation source 2 and by vapor deposition body 3 in Vakuumkammer 1; And utilize with the temperature of the gasification substance of evaporation source 2 that heated cylindrical body 4 surrounds evaporation source 2 and by the space between the vapor deposition body 3, make material 9 by evaporation source 2 gasifications in cylindrical body 4, circulate and arrive and make its vapor deposition by the surface of vapor deposition body 3.This vacuum deposition apparatus possesses: can with by the material of evaporation source 2 gasification through circulation and arriving cylindrical body 4 in after the peristome 5 of evaporation source accommodating chamber 24 by the mode of vapor deposition surface, adjust the switching parts 6 of the opening degree of peristome 5; Make the vapor deposition thickness instrumentation parts 7 that come its vapor deposition thickness of instrumentation by material 9 vapor depositions of evaporation source 2 gasifications; With the open and close controlling parts 8 of basis by the opening degree of the vapor deposition thickness adjustment switching parts 6 of vapor deposition thickness instrumentation parts 7 instrumentations.
Patent documentation 1: TOHKEMY 2002-80961 communique
Patent documentation 2: TOHKEMY 2008-156726 communique
In the device of patent documentation 1, can not correctly control from vapor deposition source to by the amount of movement of the gasification substance of vapor deposition body, be limited by radiation heat from cylindrical body, can't easily control evaporation rate.
The device of patent documentation 2 has improved the shortcoming of patent documentation 1; By the material of vapor deposition source gasification through circulation and arriving in cylindrical body after the peristome by the vapor deposition body; Vapor deposition thickness according to vapor deposition thickness instrumentation parts instrumentation; Adjust the switching parts of the opening degree of peristome with the open and close controlling unit control, thereby can control the amount of gasification substance, can not be limited by radiation heat from cylindrical body through peristome; Control from vapor deposition source to by the amount of movement of the gasification substance of vapor deposition body according to vapor deposition thickness, can control evaporation rate easily.But; Owing to use in the cylindrical body; The diffusion limited system of the gasification substance after in passing through cylindrical body; Be difficult to adjust vapor deposition source and by the distance between the vapor deposition body, and then, for resulting from a small amount of molten metal of not being gasified totally and splashing from vapor deposition source and betide by the solution countermeasure of defectives such as the pin hole of vapor deposition body or hole insufficient.
Summary of the invention
The objective of the invention is to, provide and improve the problems referred to above, and can form the vacuum deposition apparatus of even and flawless metal evaporation film on by the vapor deposition body.
In view of the foregoing; The inventor is furtheing investigate the back discovery; Make as the vapor deposition source in the vacuum deposition apparatus after the substance circulating of the peristome of crucible gasification is in metal circular cone cylindrical body, emit to metal circular cone cylindrical body and by the space between the vapor deposition body, and arrival is by the surface of vapor deposition body; Thereby on by the vapor deposition body, obtain even and flawless metal evaporation film; Wherein, metal circular cone cylindrical body have be arranged on downwards with minor diameter part directly over the peristome of crucible coaxial on, and be heated to the optimum shape that gasification substance keeps the temperature of vaporized state.
And then find; If will obtained by the surface of vapor deposition body especially evenly and the vapor-deposited film of the high-reflectivity of free of pinholes, important factor is for by the chamfer length of the distance between the crucible peristome of vapor deposition surface and vapor deposition source, the said metal circular cone cylindrical body that directly over the crucible peristome, is provided with downwards with minor diameter part and the cone angle of circular cone cylindrical body.
Through making these factors keep best relation; Can make material from crucible peristome gasification through said metal circular cone cylindrical body; And arrive by the surface of vapor deposition body when keeping vaporized state, thereby form do not have pin hole, on by the width of vapor deposition body on a large scale in uniform vapor-deposited film.
Vapor deposition source metal in the crucible is not all to leave the moment gasification of crucible peristome; Change according to the interior vacuum tightness of temperature in the crucible and device; Wherein a part becomes the small-particle of molten metal and splashes from the crucible peristome; And these small-particles arrive by the surface of vapor deposition body, then become the major cause that forms defectives such as pin hole, hole at vapor-deposited film with by the vapor deposition body.
For avoiding this problem; Be provided with downwards with minor diameter part directly over the peristome that need be through crucible; And the said metal circular cone cylindrical body that is heated to the temperature of gasification substance maintenance vaporized state is caught the small-particle of the molten metal that splashes fully; Reheat is that vaporized state is released to metal circular cone cylindrical body and by the space between the vapor deposition body; And in order to catch the small-particle of the molten metal that splashes fully through metal circular cone cylindrical body, need use with the good material of the small-particle wettability of molten metal and make metal circular cone cylindrical body.
And; Find if vapor deposition source is to be selected from a kind of in the group that is made up of silver, aluminium, tin, copper; The material of metal circular cone cylindrical body is a kind of metal that is selected from the group that is made up of chromium, molybdenum, tungsten; Then bring into play above-mentioned effect especially effectively, can on by the vapor deposition body, form even and flawless metal evaporation film.
Based on these opinions; Vacuum deposition apparatus of the present invention in Vakuumkammer, dispose vapor deposition source with by the vapor deposition body; Material by vapor deposition source gasification is arrived by the surface of vapor deposition body and vapor deposition; Said vacuum deposition apparatus is characterised in that; Make material from the peristome gasification of the crucible of putting into this vapor deposition source after the circulation of metal circular cone cylindrical body, emit, and arrive this by the surface of vapor deposition body and vapor deposition to this metal circular cone cylindrical body and by the space between the vapor deposition body; This metal circular cone cylindrical body is aimed at the axle center with this crucible downwards with minor diameter part directly over the peristome of this crucible and the material that is provided with and is heated to this gasification keeps the temperature of vaporized state; When the peristome of this crucible and this were D by the distance between the vapor deposition body, the chamfer length L of this metal circular cone cylindrical body was 0.05D～0.5D, and the cone angle θ of this metal circular cone cylindrical body is 45 °～75 °.
From the material of the peristome of crucible gasification through after in the metal circular cone cylindrical body that is heated to the temperature that keeps vaporized state; Emit to it and by the space between the vapor deposition body from its large-diameter portion; Thereby can formed uniform vapor-deposited film on a large scale by the width surface of vapor deposition body; Metal circular cone cylindrical body is caught the small-particle of the molten metal that splashes from the peristome of crucible fully; Reheat and make it become vaporized state after, emit to it and by the space between the vapor deposition body from its large-diameter portion, therefore can prevent vapor-deposited film and formed by defectives such as pin hole that produces in the vapor deposition body or holes.In order to bring into play the effect of metal circular cone cylindrical body to greatest extent, also preferred crucible is circular crucible.
D is according to Vakuumkammer, crucible internal diameter, crucible heating unit, suitably select from the conditions such as substance classes of vapor deposition source gasification; But D is too small; Then be difficult to catch fully the small-particle of the molten metal that splashes from the peristome of crucible; D is excessive, and the material that then produces gasification can't arrive by the danger of vapor deposition surface fully.
L is during less than 0.05D; The upper end of metal circular cone cylindrical body and elongated by the space length between the vapor deposition body; The material of gasification can't keep vaporized state and reduce the homogeneity of vapor deposition thickness, and the function of catching the molten metal small-particle that splashes through metal circular cone cylindrical body also descends.
When L surpassed 0.5D, it was saturated to be not only effect, and metal circular cone cylindrical body becomes big, the cost of increase equipment aspect.
Cone angle θ surpasses 75 ° less than 45 ° or cone angle θ, all can reduce molten metal small-particle that seizure fully splashes and the function that makes its gasification.At this, cone angle θ is meant, the angle of inclination on interior all inclined-planes of the radial direction of relative metal circular cone cylindrical body upper end.
In addition; In order to bring into play the effect of metal circular cone cylindrical body to greatest extent; Also preferred crucible is circular crucible; The path bottom internal diameter of metal circular cone cylindrical body contacts with the crucible peristome, and in order to catch the molten metal small-particle fully and to make its gasification, its internal diameter preferably internal diameter with the crucible peristome is identical.
And then vacuum deposition apparatus of the present invention is characterised in that, this vapor deposition source is to be selected from a kind of in the group that is made up of silver, aluminium, tin, copper, and the material of this metal circular cone cylindrical body is a kind of metal that is selected from the group that is made up of chromium, molybdenum, tungsten.
If the metal of vapor deposition source is to be selected from a kind of in the group that is made up of silver, aluminium, tin, copper; The material of metal circular cone cylindrical body is a kind of metal that is selected from the group that is made up of chromium, molybdenum, tungsten; Then can bring into play the wettability between the metal of metal circular cone cylindrical body and vapor deposition source to greatest extent, can on by the vapor deposition body, form even and flawless metal evaporation film at short notice.
Through vacuum deposition apparatus of the present invention, can on by the vapor deposition body, form even and flawless metal evaporation film.
Description of drawings
Fig. 1 is the synoptic diagram of an embodiment of expression vacuum deposition apparatus of the present invention.
Nomenclature
1 vacuum deposition apparatus
2 Vakuumkammers
3 high-frequency induction heating apparatus
4 coils
5 vapor deposition source
6 circular crucibles
7 heating units
8 coils
9 metal circular cone cylindrical body
10 by the vapor deposition body
11 peristomes
12 paths bottom
13 upper ends
14 spaces
15 vapor-deposited films
16 silver medal vapor deposition plastics films
17 molten metal small-particles
18 metal circular cone cylindrical body inclined-planes
19 upper ends
22 vacuum pumps
Embodiment
Specify the vacuum deposition apparatus of an embodiment of the present invention with reference to accompanying drawing.
Fig. 1 is the synoptic diagram of an embodiment of expression vacuum deposition apparatus 1 of the present invention, and Vakuumkammer 2 is through vacuum pump 22 exhausts, and can reduce pressure thus is vacuum state.Bottom in this Vakuumkammer 2 is provided with crucible 6 and metal circular cone cylindrical body 9; Put into the vapor deposition source 5 of coil 4 heating of useful high-frequency induction heating apparatus 3 in this crucible 6, this metal circular cone cylindrical body 9 directly over the crucible 6 with minor diameter part downwards and with circular crucible 6 concentric shafts on heat with the coil 8 of heating unit 7.The substrates of enforcement vapor deposition etc. are configured in the top of metal circular cone cylindrical body 9 across space 14 by vapor deposition body 10.
When being made as D with the peristome 11 of crucible 6 and by the distance between the vapor deposition body 10, the length L on the inclined-plane 18 of metal circular cone cylindrical body 9 is 0.05D～0.5D, and the cone angle θ of metal circular cone cylindrical body 9 is set at 45 °～75 °.
D is according to the internal diameter of Vakuumkammer 2, crucible 6, high-frequency induction heating apparatus 3, suitably select from the conditions such as substance classes of vapor deposition source 5 gasifications; But D is too small; Then be difficult to catch fully the small-particle 17 of the molten metal that splashes from the peristome 11 of crucible 6; D is excessive, and the material that then produces gasification can't arrive by the danger on vapor deposition body 10 surfaces fully.
L is during less than 0.05D; The upper end 19 of metal circular cone cylindrical body 9 and elongated by 14 distances of the space between the vapor deposition body 10; The material of gasification can't keep vaporized state and reduce the homogeneity of the thickness of vapor-deposited film 15, and the function of catching the molten metal small-particle 17 that splashes through metal circular cone cylindrical body 9 also descends.
When L surpassed 0.5D, it was saturated to be not only effect, and metal circular cone cylindrical body 9 becomes big, the cost of increase equipment aspect.
Cone angle θ surpasses 75 ° less than 45 ° or cone angle θ, all can reduce molten metal small-particle 17 that seizure fully splashes and the function that makes its gasification.At this, cone angle θ is meant, the angle of inclination on interior all inclined-planes 18 of the radial direction of the upper end 19 of relative metal circular cone cylindrical body 9.
In addition, the path of metal circular cone cylindrical body 9 bottom 12 contact with the upper end 13 of crucible 6, and in order to catch molten metal small-particle 17 fully and it to be gasified, and preferably the internal diameter with crucible peristome 11 is identical for 12 internal diameter bottom the path.
When utilizing this vacuum deposition apparatus 1 to carry out vapor deposition, at first, vapor deposition source 5 is filled into crucible 6 and is provided with, and distance B is set, and flatly be provided with by vapor deposition body 9 with the peristome 11 of crucible 6 from the peristome 11 of crucible 6.
Then, operation vacuum pump 22 is vacuum state with decompression in the Vakuumkammer 2, makes coil 4 heatings come the vapor deposition source 5 in the heating crucible 6, and comes heating of metal circular cone cylindrical body 9 through heating unit 7 heater coils 8.Even the Heating temperature of metal circular cone cylindrical body 9 is set at from the material of vapor deposition source 5 gasification attached to metal circular cone cylindrical body 9 also through gasification such as evaporation once more and the temperature that is not decomposed.
Then, as stated to decompression in the Vakuumkammer 2 and heating vapor deposition source 5, then vapor deposition source 5 fusions, evaporation or distillation and gasify.This gasification substance that produces from vapor deposition source 5 imports in the metal circular cone cylindrical body 9 from the peristome 11 of crucible 6; And in metal circular cone cylindrical body 9, advance; Xiang Qiyu is evenly emitted with cone shape range by the space between the vapor deposition body 10 14; And, form silver-colored vapor deposition plastics film 16 thus by the width of vapor deposition body 10 diffusion and arrive its surface and become vapor-deposited film 15.
The a small amount of molten metal small-particle 17 that is splashed by vapor deposition source 5 from the peristome 11 of crucible 6 is captured in metal circular cone cylindrical body 9, and reheat becomes vaporized state, emits to metal circular cone cylindrical body 9 and by the space between the vapor deposition body 14 afterwards.
Catch molten metal small-particle 17 fully with metal circular cone cylindrical body 9 and need use the metal making circular cone cylindrical body 9 good with the wettability of this molten metal small-particle 17.
[embodiment]
In vacuum deposition apparatus of the present invention; As the polyester film that is used long 100mm * wide 100mm * thick 4 μ m by the vapor deposition body; In the circular crucible of the graphite of internal diameter 100mm * high 123mm, silver is used as vapor deposition source, and the circular cone cylindrical body of the molybdenum system of use, D, L, cone angle θ changed like table 1; Having made silver is the silver-colored vapor deposition polyester film of 80nm thickness by vapor deposition, and measures having or not of silver-colored vapor deposition thickness and pin hole.Made not within the scope of the present invention silver-colored vapor deposition polyester film of D, L, θ as comparative example.
The vapor deposition thickness is measured sheet resistance value through the membrane resistance tester of 4 instrumentation methods, its value is scaled thickness tries to achieve.
The mensuration place of vapor deposition thickness is the central point of vapor-deposited film and this three place, 90mm position about this central point.
For having or not of pin hole, from the inboard irradiating ultraviolet light of sample film, with 10 times of reading lens visual observations, with UV-light see through and the visible part as pin hole.Pin hole does not have fully is expressed as zero, pin hole be 10 with interior be expressed as △, pin hole be being expressed as more than 10 *.
[table 1]
Result by table 1 can know, use vacuum deposition apparatus manufacturing of the present invention be formed on by the metal evaporation film of vapor deposition surface for do not have pin hole, the thickness deviation is few and the even metal vapor-deposited film.
In comparative example 5, the use cone angle is 90 ° a cylindrical shell, promptly uses cylinder.
More than, embodiment of the present invention has been described, but the present invention by these the record do not limit, in the scope that does not break away from technological thought of the present invention, can suitably change.
Claims (2)
1. vacuum deposition apparatus; For configuration vapor deposition source in Vakuumkammer and by the vapor deposition body; Material by vapor deposition source gasification is arrived by the surface of vapor deposition body and the vacuum deposition apparatus of vapor deposition; Said vacuum deposition apparatus is characterised in that; Make material from the peristome gasification of the crucible of putting into this vapor deposition source after the circulation of metal circular cone cylindrical body, emit, and arrive this by the surface of vapor deposition body and vapor deposition to this metal circular cone cylindrical body and by the space between the vapor deposition body; This metal circular cone cylindrical body is aimed at the axle center with this crucible downwards with minor diameter part directly over the peristome of this crucible and the material that is provided with and is heated to this gasification keeps the temperature of vaporized state; When the peristome of this crucible and this were D by the distance between the vapor deposition body, the chamfer length L of this metal circular cone cylindrical body was 0.05D～0.5D, and the cone angle θ of this metal circular cone cylindrical body is 45 °～75 °.
2. vacuum deposition apparatus according to claim 1 is characterized in that, said vapor deposition source is to be selected from a kind of in the group that is made up of silver, aluminium, tin, copper, and the material of said metal circular cone cylindrical body is a kind of metal that is selected from the group that is made up of chromium, molybdenum, tungsten.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184381A JP5620747B2 (en) | 2010-08-19 | 2010-08-19 | Vacuum deposition equipment |
| JP2010-184381 | 2010-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102373421A true CN102373421A (en) | 2012-03-14 |
Family
ID=45792636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102275236A Pending CN102373421A (en) | 2010-08-19 | 2011-08-09 | Vacuum evaporation device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5620747B2 (en) |
| CN (1) | CN102373421A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104278236A (en) * | 2013-07-03 | 2015-01-14 | 三星显示有限公司 | Deposition source |
| CN107267921A (en) * | 2017-07-24 | 2017-10-20 | 武汉华星光电半导体显示技术有限公司 | Crucible and evaporation coating device is deposited |
| CN107299321A (en) * | 2017-07-28 | 2017-10-27 | 武汉华星光电半导体显示技术有限公司 | Evaporation source and evaporator |
| WO2018137322A1 (en) * | 2017-01-24 | 2018-08-02 | 京东方科技集团股份有限公司 | Crucible |
| CN111628138A (en) * | 2020-06-29 | 2020-09-04 | 天津市捷威动力工业有限公司 | Preparation method and application of electrode |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2586634B (en) * | 2019-08-30 | 2022-04-20 | Dyson Technology Ltd | Multizone crucible apparatus |
| JP2023084564A (en) * | 2021-12-07 | 2023-06-19 | 長州産業株式会社 | Vapor deposition source and vapor deposition apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134555A (en) * | 1981-02-10 | 1982-08-19 | Fuji Photo Film Co Ltd | Method and device for forming thin film |
| EP1167566A1 (en) * | 2000-06-22 | 2002-01-02 | Matsushita Electric Works, Ltd. | Apparatus for and method of vacuum vapor deposition and organic electroluminescent device |
| JP2008231479A (en) * | 2007-03-19 | 2008-10-02 | Kyocera Corp | Crucible for vapor deposition, vapor deposition apparatus, vapor deposition method, and method for manufacturing organic el apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61207571A (en) * | 1985-03-11 | 1986-09-13 | Mitsubishi Electric Corp | Vacuum deposition device |
| JPH0673543A (en) * | 1992-08-28 | 1994-03-15 | Ishikawajima Harima Heavy Ind Co Ltd | Continuous vacuum vapor deposition device |
| JPH10154325A (en) * | 1996-11-22 | 1998-06-09 | Fuji Photo Film Co Ltd | Apparatus for production of magnetic recording medium |
| DE102007035166B4 (en) * | 2007-07-27 | 2010-07-29 | Createc Fischer & Co. Gmbh | High-temperature evaporator cell with heating zones connected in parallel, process for their operation and their use in coating plants |
-
2010
- 2010-08-19 JP JP2010184381A patent/JP5620747B2/en not_active Expired - Fee Related
-
2011
- 2011-08-09 CN CN2011102275236A patent/CN102373421A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134555A (en) * | 1981-02-10 | 1982-08-19 | Fuji Photo Film Co Ltd | Method and device for forming thin film |
| EP1167566A1 (en) * | 2000-06-22 | 2002-01-02 | Matsushita Electric Works, Ltd. | Apparatus for and method of vacuum vapor deposition and organic electroluminescent device |
| JP2008231479A (en) * | 2007-03-19 | 2008-10-02 | Kyocera Corp | Crucible for vapor deposition, vapor deposition apparatus, vapor deposition method, and method for manufacturing organic el apparatus |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104278236A (en) * | 2013-07-03 | 2015-01-14 | 三星显示有限公司 | Deposition source |
| WO2018137322A1 (en) * | 2017-01-24 | 2018-08-02 | 京东方科技集团股份有限公司 | Crucible |
| CN107267921A (en) * | 2017-07-24 | 2017-10-20 | 武汉华星光电半导体显示技术有限公司 | Crucible and evaporation coating device is deposited |
| CN107299321A (en) * | 2017-07-28 | 2017-10-27 | 武汉华星光电半导体显示技术有限公司 | Evaporation source and evaporator |
| WO2019019237A1 (en) * | 2017-07-28 | 2019-01-31 | 武汉华星光电半导体显示技术有限公司 | Evaporation source apparatus and evaporation deposition equipment |
| CN111628138A (en) * | 2020-06-29 | 2020-09-04 | 天津市捷威动力工业有限公司 | Preparation method and application of electrode |
| CN111628138B (en) * | 2020-06-29 | 2023-08-18 | 天津市捷威动力工业有限公司 | Preparation method and application of electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012041604A (en) | 2012-03-01 |
| JP5620747B2 (en) | 2014-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102373421A (en) | Vacuum evaporation device | |
| KR100869199B1 (en) | Vapor deposition source and vapor deposition apparatus | |
| US8082878B2 (en) | Thermal evaporation apparatus, use and method of depositing a material | |
| US7359630B2 (en) | Evaporation source for evaporating an organic electroluminescent layer | |
| KR102332644B1 (en) | Effluent cell, deposition system comprising effluent cell, and related methods | |
| EP2168644B1 (en) | Evaporator for organic materials and method for evaporating organic materials | |
| JP2009084665A (en) | Supply device and vapor deposition apparatus | |
| JP6436544B1 (en) | Evaporation source apparatus and control method thereof | |
| JP2011256427A (en) | Method for evaporating/sublimating evaporation material in vacuum deposition apparatus and crucible device for vacuum deposition | |
| CN101445907A (en) | Vapor deposition device | |
| US20150354896A1 (en) | Crucible | |
| KR100685431B1 (en) | Vapor deposition source for organic material | |
| US10547003B2 (en) | Deposition apparatus | |
| US8724973B2 (en) | Heat equalizer | |
| JP2007224393A (en) | Vapor deposition source cell, thin film deposition method, aperture diaphragm member, and vapor deposition source heater | |
| KR101087685B1 (en) | Vacuum evaporation device | |
| JP2013209698A (en) | Vapor deposition device | |
| CN111455322A (en) | Crucible device and vapor deposition device | |
| CN104018121A (en) | Heating container for preventing leakage of high-temperature metal material and manufacturing method thereof | |
| JP4344631B2 (en) | Molecular beam source for organic thin film deposition | |
| KR101094001B1 (en) | A molecular beam source for use in accumulation of organic thin-films | |
| KR101103369B1 (en) | Vacuum evaporation method | |
| KR200420182Y1 (en) | Effusion cell which can control film uniformity of large scale substrate | |
| CN114032511A (en) | Electronic action ultrahigh vacuum evaporation source | |
| JP2009161797A (en) | Film deposition source and film deposition apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120314 |