JP5615757B2 - Semiconductor device, connector, and manufacturing method of semiconductor device - Google Patents

Semiconductor device, connector, and manufacturing method of semiconductor device Download PDF

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JP5615757B2
JP5615757B2 JP2011084568A JP2011084568A JP5615757B2 JP 5615757 B2 JP5615757 B2 JP 5615757B2 JP 2011084568 A JP2011084568 A JP 2011084568A JP 2011084568 A JP2011084568 A JP 2011084568A JP 5615757 B2 JP5615757 B2 JP 5615757B2
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semiconductor device
semiconductor element
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村松　健太郎
健太郎 村松
雄司 森永
雄司 森永
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Shindengen Electric Manufacturing Co Ltd
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    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/181—Encapsulation

Description

本発明は、半導体装置、接続子、および、半導体装置に関する。   The present invention relates to a semiconductor device, a connector, and a semiconductor device.

図１は、従来の半導体装置１００Ａの構成の一例を示す図である。なお、図１において、半導体素子を封止するモールド樹脂は、省略されている。   FIG. 1 is a diagram illustrating an example of a configuration of a conventional semiconductor device 100A. In FIG. 1, the mold resin for sealing the semiconductor element is omitted.

図１に示すように、従来の半導体装置には、半導体素子１に電気的に接続される複数の外部リードＬ１〜Ｌ３が、該半導体素子１を内包する封止樹脂（図示せず）の同一の側面から突出する樹脂封止型の半導体装置１００Ａがある。   As shown in FIG. 1, in a conventional semiconductor device, a plurality of external leads L <b> 1 to L <b> 3 that are electrically connected to a semiconductor element 1 are the same in sealing resin (not shown) that encloses the semiconductor element 1. There is a resin-encapsulated semiconductor device 100A that protrudes from the side surface.

この従来の半導体装置１００Ａでは、例えば、半導体素子１Ａの各端子と該複数の外部リードＬ２、Ｌ３とが、一対一に、ボンディングワイヤＢ１、Ｂ２により、接続されている（例えば、特許文献１参照。）。   In this conventional semiconductor device 100A, for example, each terminal of the semiconductor element 1A and the plurality of external leads L2 and L3 are connected one-to-one by bonding wires B1 and B2 (see, for example, Patent Document 1). .)

このような半導体装置１００Ａの製造方法においては、該外部リードＬ２、Ｌ３の一端Ｌ２ａ、Ｌ３ａとボンディングワイヤＢ１、Ｂ２の一端Ｂ１ａ、Ｂ２ａとをボンディングした後、該半導体素子１の端子１ａ、１ｂと該ボンディングワイヤＢ１、Ｂ２の他端Ｂ１ｂ、Ｂ２ｂとをボンディングする。   In such a manufacturing method of the semiconductor device 100A, after bonding the one ends L2a and L3a of the external leads L2 and L3 and the one ends B1a and B2a of the bonding wires B1 and B2, the terminals 1a and 1b of the semiconductor element 1 The other ends B1b and B2b of the bonding wires B1 and B2 are bonded.

そして、半導体素子１を内包するように樹脂モールドを実施し、その後、隣接する該該部リードをリードフレームから例えばプレス金型を用いてプレスカットすることにより分離する。   Then, a resin mold is performed so as to enclose the semiconductor element 1, and then the adjacent partial leads are separated from the lead frame by, for example, press cutting using a press die.

特開２００９−２７２５７８号公報JP 2009-272578 A

しかし、既述の従来技術では、各々の該外部リードに対してワイヤボンディング等するため、これらの製造工程自体にかかる時間が長く、また、位置合わせ等も各々の該外部リードに対して実行する必要があり、半導体装置の製造コストが増加する問題があった。   However, in the prior art described above, since the wire bonding or the like is performed on each of the external leads, the time required for the manufacturing process itself is long, and alignment and the like are also performed on each of the external leads. There is a problem that the manufacturing cost of the semiconductor device increases.

本発明の一態様に係る実施例に従った半導体装置は、
導電性を有する板状のダイパッドと、
前記ダイパッド上に配置され、少なくとも３つの端子を有し、前記ダイパッドの上面と第１の端子が電気的に接続された半導体素子と、
前記ダイパッドと電気的に接続された第１のリードと、
前記半導体素子の第２の端子に一端が電気的に接続され導電性を有する第１の接続部材と、前記半導体素子の第３の端子に一端が電気的に接続され導電性を有する第２の接続部材と、前記第１の接続部材と前記第２の接続部材との間を支持する支持部材と、を有する接続子と、
前記第１の接続部材の他端に一端が電気的に接続された第２のリードと、
前記第２の接続部材の他端に一端が電気的に接続された第３のリードと、
前記支持部材が露出した状態で、前記ダイパッド、前記半導体素子、前記第１の接続部材の少なくとも一部、前記第２の接続部材の少なくとも一部、前記第１のリードの一端、前記第２のリードの一端、および、前記第３のリードの一端を封止するモールド樹脂と、を備え、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部が切断される
ことを特徴とする。 A semiconductor device according to an embodiment of one aspect of the present invention includes:
A plate-shaped die pad having conductivity;
A semiconductor element disposed on the die pad and having at least three terminals, the upper surface of the die pad and the first terminal being electrically connected;
A first lead electrically connected to the die pad;
A first connecting member having one end electrically connected to the second terminal of the semiconductor element and having conductivity; and a second connecting member having one end electrically connected to the third terminal of the semiconductor element and having conductivity. A connector having a connection member, and a support member that supports between the first connection member and the second connection member;
A second lead having one end electrically connected to the other end of the first connecting member;
A third lead having one end electrically connected to the other end of the second connection member;
With the support member exposed, the die pad, the semiconductor element, at least part of the first connection member, at least part of the second connection member, one end of the first lead, the second A mold resin for sealing one end of the lead and one end of the third lead;
At least a part of the support member is cut so that the second lead and the third lead are insulated from each other.

前記半導体装置において、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部が除去されることを特徴とする。 In the semiconductor device,
At least a part of the support member is removed so that the second lead and the third lead are insulated from each other.

前記半導体装置において、
前記支持部材の除去される部分には、切断のための切断用溝が形成されていることを特徴とする。 In the semiconductor device,
A cutting groove for cutting is formed in a portion where the support member is removed.

前記半導体装置において、
前記切断用溝は、前記支持部材の切断の方向に沿って形成されていることを特徴とする。 In the semiconductor device,
The cutting groove is formed along a cutting direction of the support member.

前記半導体装置において、
前記支持部材の除去される部分の厚さは、前記第２のリードおよび前記第３のリードの厚さよりも薄い
ことを特徴とする。 In the semiconductor device,
The thickness of the removed portion of the support member is smaller than the thickness of the second lead and the third lead.

前記半導体装置において、
前記半導体素子の前記第１の端子は前記半導体素子の下面に配置され、前記半導体素子の前記第２の端子および前記第３の端子は前記半導体素子の上面に配置されている
ことを特徴とする。 In the semiconductor device,
The first terminal of the semiconductor element is disposed on a lower surface of the semiconductor element, and the second terminal and the third terminal of the semiconductor element are disposed on an upper surface of the semiconductor element. .

前記半導体装置において、
前記第２のリードの一端に第１の嵌合用溝が形成されており、
前記第１の接続部材の他端は、前記第１の嵌合用溝に嵌合された状態で前記第２のリードの一端に接続され、
前記第３のリードの一端に第２の嵌合用溝が形成されており、
前記第２の接続部材の他端は、前記第２の嵌合用溝に嵌合された状態で前記第３のリードの一端に接続されている
ことを特徴とする。 In the semiconductor device,
A first fitting groove is formed at one end of the second lead;
The other end of the first connecting member is connected to one end of the second lead in a state of being fitted in the first fitting groove,
A second fitting groove is formed at one end of the third lead;
The other end of the second connecting member is connected to one end of the third lead while being fitted in the second fitting groove.

前記半導体装置において、
前記第１の接続部材の他端は、前記第２のリードの一端の側面と接続され、前記第２の接続部材の他端は、前記第３のリードの一端の側面と接続されている
ことを特徴とする。 In the semiconductor device,
The other end of the first connecting member is connected to a side surface of one end of the second lead, and the other end of the second connecting member is connected to a side surface of one end of the third lead. It is characterized by.

前記半導体装置において、
前記第２のリードの一端の上面および前記第３のリードの一端の上面の前記ダイパッドの上面に対する高さは、前記第１の接続部材の他端の上面および前記第２の接続部材の他端の上面の前記ダイパッドの上面に対する高さと等しい
ことを特徴とする。 In the semiconductor device,
The height of the upper surface of one end of the second lead and the upper surface of one end of the third lead with respect to the upper surface of the die pad is such that the upper surface of the other end of the first connecting member and the other end of the second connecting member The height of the upper surface is equal to the height of the upper surface of the die pad.

前記半導体装置において、
前記半導体素子の前記第１の端子と前記ダイパッドの上面とは、半田付けにより電気的に接続されていることを特徴とする。 In the semiconductor device,
The first terminal of the semiconductor element and the upper surface of the die pad are electrically connected by soldering.

前記半導体装置において、
前記半導体素子の前記第２の端子と前記第１の接続部材の一端とは、半田付けにより電気的に接続され、
前記半導体素子の前記第３の端子と前記第２の接続部材の一端とは、半田付けにより電気的に接続されている
ことを特徴とする。 In the semiconductor device,
The second terminal of the semiconductor element and one end of the first connection member are electrically connected by soldering,
The third terminal of the semiconductor element and one end of the second connection member are electrically connected by soldering.

本発明の一態様に係る実施例に従った接続子は、
導電性を有する板状のダイパッドと、前記ダイパッド上に配置され、少なくとも３つの端子を有し、前記ダイパッドの上面と第１の端子が電気的に接続された半導体素子と、前記ダイパッドと電気的に接続された第１のリードと、第２のリードと、第３のリードと、モールド樹脂と、を備えた半導体装置に適用される接続子であって、
前記接続子は、前記半導体素子の第２の端子に一端が電気的に接続され、第３のリードの一端に前記第２の接続部材の他端が電気的に接続され、前記第２のリードの一端に前記第１の接続部材の他端が電気的に接続され、導電性を有する第１の接続部材と、前記半導体素子の第３の端子に一端が電気的に接続され、導電性を有する第２の接続部材と、前記第１の接続部材と前記第２の接続部材との間を支持する支持部材と、を有し、
モールド樹脂により、前記支持部材が露出した状態で、前記ダイパッド、前記半導体素子、前記第１の接続部材の少なくとも一部、前記第２の接続部材の少なくとも一部、前記第１のリードの一端、前記第２のリードの一端、および、前記第３のリードの一端が封止され、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部が切断される
ことを特徴とする。 A connector according to an embodiment of one aspect of the present invention is:
A plate-shaped die pad having conductivity, a semiconductor element disposed on the die pad and having at least three terminals, the upper surface of the die pad being electrically connected to the first terminal, and the die pad electrically A connector applied to a semiconductor device including a first lead, a second lead, a third lead, and a mold resin connected to
The connector has one end electrically connected to the second terminal of the semiconductor element, the other end of the second connecting member is electrically connected to one end of the third lead, and the second lead The other end of the first connection member is electrically connected to one end of the first connection member, and one end is electrically connected to the third terminal of the semiconductor element and the third terminal of the semiconductor element. A second connecting member having, and a support member that supports between the first connecting member and the second connecting member,
With the mold resin, with the support member exposed, the die pad, the semiconductor element, at least part of the first connection member, at least part of the second connection member, one end of the first lead, One end of the second lead and one end of the third lead are sealed,
At least a part of the support member is cut so that the second lead and the third lead are insulated from each other.

本発明の一態様に係る実施例に従った半導体装置の製造方法は、
導電性を有する第１、第２の接続部材と、前記第１の接続部材と前記第２の接続部材との間を支持する支持部材と、を有する接続子により、リードと半導体素子とを電気的に接続する半導体装置の製造方法であって、
第１のリードが電気的に接続され且つ導電性を有する板状のダイパッド上に、少なくとも３つの端子を有する半導体素子を配置し、前記ダイパッドの上面と前記半導体素子の第１の端子とを電気的に接続する第１の工程と、
前記半導体素子の第２の端子と第２のリードの一端とを、前記第１の接続部材により電気的に接続するとともに、前記半導体素子の第３の端子と第３のリードの一端とを前記第２の接続部材により電気的に接続する第２の工程と、
モールド樹脂により、前記支持部材が露出した状態で、前記ダイパッド、前記半導体素子、前記第１の接続部材の少なくとも一部、前記第２の接続部材の少なくとも一部、前記第１のリードの一端、前記第２のリードの一端、および、前記第３のリードの一端を封止する第３の工程と、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部を切断する第４の工程と、を備える
ことを特徴とする。 A method for manufacturing a semiconductor device according to an embodiment of one aspect of the present invention includes:
The lead and the semiconductor element are electrically connected to each other by a connector having first and second conductive connecting members and a supporting member that supports between the first connecting member and the second connecting member. A method for manufacturing a semiconductor device to be connected,
A semiconductor element having at least three terminals is disposed on a plate-like die pad to which the first lead is electrically connected and has conductivity, and the upper surface of the die pad and the first terminal of the semiconductor element are electrically connected. A first step of automatically connecting;
The second terminal of the semiconductor element and one end of the second lead are electrically connected by the first connecting member, and the third terminal of the semiconductor element and one end of the third lead are connected to the first terminal. A second step of electrically connecting by a second connecting member;
With the mold resin, with the support member exposed, the die pad, the semiconductor element, at least part of the first connection member, at least part of the second connection member, one end of the first lead, A third step of sealing one end of the second lead and one end of the third lead;
And a fourth step of cutting at least part of the support member so that the second lead and the third lead are insulated from each other.

前記半導体装置の製造方法において、
リードフレームから前記第１ないし第３のリードを切り離すタイミングと、前記支持部材を切断するタイミングとが同時である
ことを特徴とする。 In the method for manufacturing the semiconductor device,
The timing for separating the first to third leads from the lead frame and the timing for cutting the support member are the same.

前記半導体装置の製造方法において、
プレス金型によりプレスカットすることにより、前記リードフレームから前記第１ないし第３のリードを切り離すとともに、前記支持部材を切断する
ことを特徴とする。 In the method for manufacturing the semiconductor device,
The first to third leads are separated from the lead frame by press cutting with a press die, and the support member is cut.

本発明の一態様に係る半導体装置は、導電性を有する板状のダイパッドと、該ダイパッド上に配置され、少なくとも３つの端子を有し、該ダイパッドの上面と第１の端子が電気的に接続された半導体素子と、該ダイパッドと電気的に接続された第１のリードと、該半導体素子の第２の端子に一端が電気的に接続され導電性を有する第１の接続部材と、該半導体素子の第３の端子に一端が電気的に接続され導電性を有する第２の接続部材と、該第１の接続部材と該第２の接続部材との間を支持する支持部材と、を有する接続子と、該第１の接続部材の他端に一端が接続された第２のリードと、該第２の接続部材の他端に一端が接続された第３のリードと、該支持部材が露出した状態で、該ダイパッド、該半導体素子、該第１の接続部材の少なくとも一部、該第２の接続部材の少なくとも一部、該第１のリードの一端、該第２のリードの一端、および、該第３のリードの一端を封止するモールド樹脂と、を備える。   A semiconductor device according to one embodiment of the present invention includes a plate-shaped die pad having conductivity, and at least three terminals which are disposed on the die pad, and the upper surface of the die pad and the first terminal are electrically connected to each other. A semiconductor element, a first lead electrically connected to the die pad, a first connection member having one end electrically connected to a second terminal of the semiconductor element and having conductivity, and the semiconductor A second connection member having one end electrically connected to the third terminal of the element and having conductivity; and a support member that supports a space between the first connection member and the second connection member. A connector, a second lead having one end connected to the other end of the first connecting member, a third lead having one end connected to the other end of the second connecting member, and the support member; In an exposed state, the die pad, the semiconductor element, and the first connecting member are less A part of the second connecting member, one end of the first lead, one end of the second lead, and a mold resin that seals one end of the third lead. .

そして、第２のリードと第３のリードとの間が絶縁されるように、支持部材の少なくとも一部が切断される。   Then, at least a part of the support member is cut so that the second lead and the third lead are insulated.

このような構成により、１つの接続子で２つの該第２、第３のリードと該半導体素子とを同時に接続することを可能にする。   With such a configuration, it is possible to simultaneously connect the two second and third leads and the semiconductor element with one connector.

そして、この半導体装置の製造方法においては、１つの接続子で２つのリードと半導体素子とを同時に接続するので、リードと半導体素子との接続に必要な時間や位置合わせ等の回数を削減することができ、半導体装置の製造コストを削減することができる。   In this method of manufacturing a semiconductor device, two leads and a semiconductor element are simultaneously connected with one connector, so that the time required for connection between the lead and the semiconductor element and the number of times of alignment are reduced. The manufacturing cost of the semiconductor device can be reduced.

さらに、該接続子の該支持部材に切断用の切断用溝を設けたり、支持部材の厚さを該第２、第３のリードよりも薄くしたりすることにより、より確実に該支持部材を切断することができる。   Further, by providing a cutting groove for cutting in the support member of the connector, or by making the thickness of the support member thinner than that of the second and third leads, the support member can be more securely attached. Can be cut.

すなわち、該第２のリードと該第３のリードとの間をより確実に絶縁して半導体装置の信頼性を向上することができる。   That is, the reliability of the semiconductor device can be improved by more reliably insulating the second lead and the third lead.

図１は、従来の半導体装置１００Ａの構成の一例を示す図である。FIG. 1 is a diagram illustrating an example of a configuration of a conventional semiconductor device 100A. 図２は、本発明の一態様である実施例１に係る半導体装置１００の構成の一例を示す平面図である。FIG. 2 is a plan view showing an example of the configuration of the semiconductor device 100 according to the first embodiment which is an aspect of the present invention. 図３は、図２に示す半導体装置１００を側面から見た側面図である。FIG. 3 is a side view of the semiconductor device 100 shown in FIG. 2 as viewed from the side. 図４は、図２に示す半導体装置１００を斜め方向から見た斜視図である。FIG. 4 is a perspective view of the semiconductor device 100 shown in FIG. 2 viewed from an oblique direction. 図５は、図２に示す半導体装置１００の接続子Ｓの支持部材Ｓ３が切断された状態の一例を示す図である。FIG. 5 is a diagram illustrating an example of a state in which the support member S3 of the connector S of the semiconductor device 100 illustrated in FIG. 2 is cut. 図６は、実施例１に係る半導体装置１００の製造方法のフローの一例を示す図である。FIG. 6 is a diagram illustrating an example of the flow of the method for manufacturing the semiconductor device 100 according to the first embodiment.

以下、本発明に係る各実施例について図面に基づいて説明する。   Embodiments according to the present invention will be described below with reference to the drawings.

図２は、本発明の一態様である実施例１に係る半導体装置１００の構成の一例を示す平面図である。また、図３は、図２に示す半導体装置１００を側面から見た側面図である。また、図４は、図２に示す半導体装置１００を斜め方向から見た斜視図である。また、図５は、図２に示す半導体装置１００の接続子Ｓの支持部材Ｓ３が切断された状態の一例を示す図である。
図２ないし図４に示すように、半導体装置１００は、半導体素子１と、ダイパッド１０１と、第１のリードＬ１と、第２のリードＬ２と、第３のリードＬ３と、接続子Ｓと、モールド樹脂１０２と、を備える。 FIG. 2 is a plan view showing an example of the configuration of the semiconductor device 100 according to the first embodiment which is an aspect of the present invention. FIG. 3 is a side view of the semiconductor device 100 shown in FIG. 2 as viewed from the side. FIG. 4 is a perspective view of the semiconductor device 100 shown in FIG. 2 viewed from an oblique direction. FIG. 5 is a diagram illustrating an example of a state where the support member S3 of the connector S of the semiconductor device 100 illustrated in FIG. 2 is cut.
As shown in FIGS. 2 to 4, the semiconductor device 100 includes a semiconductor element 1, a die pad 101, a first lead L 1, a second lead L 2, a third lead L 3, a connector S, A mold resin 102.

ダイパッド１０１は、導電性を有し、板状の形状を有する。このダイパッド１０１は、例えば、銅、鉄、または、それらの少なくとも何れかを含む合金により構成されている。   The die pad 101 is conductive and has a plate shape. The die pad 101 is made of, for example, copper, iron, or an alloy containing at least one of them.

半導体素子１は、ダイパッド１０１上に配置され、少なくとも３つの端子を有する。半導体素子１の第１の端子１ａは半導体素子１の下面に配置され、半導体素子１の第２の端子１ｂおよび第３の端子１ｃは半導体素子１の上面に配置されている。   The semiconductor element 1 is disposed on the die pad 101 and has at least three terminals. The first terminal 1 a of the semiconductor element 1 is disposed on the lower surface of the semiconductor element 1, and the second terminal 1 b and the third terminal 1 c of the semiconductor element 1 are disposed on the upper surface of the semiconductor element 1.

半導体素子１は、ダイパッド１０１の上面と第１の端子１ａが電気的に接続されている。半導体素子１の第１の端子１ａとダイパッド１０１の上面とは、半田付けにより電気的に接続されている。   In the semiconductor element 1, the upper surface of the die pad 101 and the first terminal 1 a are electrically connected. The first terminal 1a of the semiconductor element 1 and the upper surface of the die pad 101 are electrically connected by soldering.

この半導体素子１は、例えば、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）、ＭＯＳトランジスタ、又は、サイリスタである。   The semiconductor element 1 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOS transistor, or a thyristor.

また、接続子Ｓは、第１の接続部材Ｓ１と、第２の接続部材Ｓ２と、支持部材Ｓ３と、を有する。   The connector S includes a first connection member S1, a second connection member S2, and a support member S3.

第１の接続部材Ｓ１は、半導体素子１の第２の端子１ｂに一端Ｓ１ａが電気的に接続され導電性を有する。半導体素子１の第２の端子１ｂと第１の接続部材Ｓ１の一端Ｓ１ａとは、半田付けにより電気的に接続されている。   The first connecting member S1 is electrically connected to the second terminal 1b of the semiconductor element 1 at one end S1a. The second terminal 1b of the semiconductor element 1 and the one end S1a of the first connecting member S1 are electrically connected by soldering.

第２の接続部材Ｓ２は、半導体素子１の第３の端子１ｃに一端Ｓ２ａが電気的に接続され導電性を有する。半導体素子１の第３の端子１ｃと第２の接続部材Ｓ２の一端Ｓ２ａとは、半田付けにより電気的に接続されている。   The second connection member S <b> 2 has conductivity because one end S <b> 2 a is electrically connected to the third terminal 1 c of the semiconductor element 1. The third terminal 1c of the semiconductor element 1 and the one end S2a of the second connection member S2 are electrically connected by soldering.

支持部材Ｓ３は、第１の接続部材Ｓ１と第２の接続部材Ｓ２との間を支持するようになっている。   The support member S3 is configured to support between the first connection member S1 and the second connection member S2.

第１のリードＬ１は、ダイパッド１０１と電気的に接続されている。   The first lead L1 is electrically connected to the die pad 101.

第２のリードＬ２は、第１の接続部材Ｓ１の他端Ｓ１ｂに一端Ｌ２ａが電気的に接続されている。   One end L2a of the second lead L2 is electrically connected to the other end S1b of the first connecting member S1.

第３のリードＬ３は、第２の接続部材Ｓ２の他端Ｄ２ｂに一端Ｌ３ａが電気的に接続されている。   The third lead L3 has one end L3a electrically connected to the other end D2b of the second connection member S2.

これらの第１ないし第３のリードＬ１〜Ｌ３は、それぞれ間隔を空けて配置されている。これらの第１ないし第３のリードＬ１〜Ｌ３、および、ダイパッド１０１は、例えば、１つのリードフレームを加工することにより、形成される。   The first to third leads L1 to L3 are arranged with a space therebetween. These first to third leads L1 to L3 and the die pad 101 are formed, for example, by processing one lead frame.

なお、第２のリードＬ２の一端Ｌ２ａの上面および第３のリードＬ３の一端Ｌ３ａの上面のダイパッド１０１の上面に対する高さは、第１の接続部材Ｓ１の他端の上面および第２の接続部材Ｓ２の他端の上面のダイパッド１０１の上面に対する高さと等しくなるように設定されている。   The height of the upper surface of the one end L2a of the second lead L2 and the upper surface of the one end L3a of the third lead L3 with respect to the upper surface of the die pad 101 is such that the upper surface of the other end of the first connecting member S1 and the second connecting member The height of the upper surface of the other end of S2 is set to be equal to the height of the upper surface of the die pad 101.

第２のリードＬ２の一端Ｌ２ａに第１の嵌合用溝Ｍ１が形成されている。第１の接続部材Ｓ１の他端Ｓ１ｂは、この第１の嵌合用溝Ｍ１に嵌合された状態で第２のリードＬ２の一端Ｌ２ａに接続されている。   A first fitting groove M1 is formed at one end L2a of the second lead L2. The other end S1b of the first connecting member S1 is connected to one end L2a of the second lead L2 while being fitted in the first fitting groove M1.

第３のリードＬ３の一端Ｌ３ａに第２の嵌合用溝Ｍ２が形成されている。第２の接続部材Ｓ２の他端Ｓ２ｂは、この第２の嵌合用溝Ｍ２に嵌合された状態で第３のリードＬ３の一端に接続されている。   A second fitting groove M2 is formed at one end L3a of the third lead L3. The other end S2b of the second connection member S2 is connected to one end of the third lead L3 in a state of being fitted in the second fitting groove M2.

なお、代替的に、第１の接続部材Ｓ１の他端Ｓ１ｂは、第２のリードＬ２の一端Ｌ２ａの側面と接続され、且つ、第２の接続部材Ｓ２の他端Ｓ２ｂは、第３のリードＬ３の一端Ｌ３ａの側面と接続されているようにしてもよい。   Alternatively, the other end S1b of the first connecting member S1 is connected to the side surface of the one end L2a of the second lead L2, and the other end S2b of the second connecting member S2 is the third lead. You may make it connect with the side surface of the end L3a of L3.

また、第１の接続部材Ｓ１の他端Ｓ１ｂと、第２のリードＬ２の一端の下部とが接続され、且つ、第２の接続部材Ｓ２の他端Ｓ２ｂと、第３のリードＬ３の一端の下部とが接続されるようにしてもよい。   Further, the other end S1b of the first connecting member S1 is connected to the lower portion of one end of the second lead L2, and the other end S2b of the second connecting member S2 and one end of the third lead L3 are connected. The lower part may be connected.

また、第１ないし第３のリードＬ１〜Ｌ３は、銅、鉄、または、それらの少なくとも何れかを含む合金により構成されている。   The first to third leads L1 to L3 are made of copper, iron, or an alloy containing at least one of them.

既述の接続子Ｓは、例えば、第１ないし第３のリードＬ１〜Ｌ３と同じ材料で構成されている。すなわち、接続子Ｓは、例えば、銅、鉄、または、それらの少なくとも何れかを含む合金により構成されている。   The above-described connector S is made of the same material as the first to third leads L1 to L3, for example. That is, the connector S is made of, for example, copper, iron, or an alloy containing at least one of them.

これにより、第１ないし第３のリードＬ１〜Ｌ３と接続子Ｓとの間の導電性を向上するとともに、熱膨張率等の特性の影響を低減することができる。   Thereby, the conductivity between the first to third leads L1 to L3 and the connector S can be improved, and the influence of characteristics such as the coefficient of thermal expansion can be reduced.

なお、図５に示すように、第２のリードＬ２と第３のリードＬ３との間が絶縁されるように、例えば、支持部材Ｓ３の少なくとも一部が切断（除去）される。   As shown in FIG. 5, for example, at least a part of the support member S3 is cut (removed) so that the second lead L2 and the third lead L3 are insulated.

支持部材Ｓ３の切断（除去）される部分には、例えば、切断のための切断用溝（図示せず）が形成されている。この切断用溝は、例えば、支持部材Ｓ３の切断の方向に沿って形成されている。また、支持部材Ｓ３の切断（除去）される部分の厚さは、例えば、第２のリードＬ２および第３のリードＬ３の厚さよりも薄くなるように設定されている。   For example, a cutting groove (not shown) for cutting is formed in a portion of the support member S3 to be cut (removed). The cutting groove is formed, for example, along the cutting direction of the support member S3. Further, the thickness of the portion of the support member S3 to be cut (removed) is set to be thinner than the thicknesses of the second lead L2 and the third lead L3, for example.

これにより、より確実に該支持部材Ｓ３を切断（除去）することができる。   Thereby, the support member S3 can be cut (removed) more reliably.

また、モールド樹脂１０２は、支持部材Ｓ３が露出した状態で、ダイパッド１０１、半導体素子１、第１の接続部材Ｓ１の少なくとも一部、第２の接続部材Ｓ２の少なくとも一部、第１のリードＬ１の一端Ｌ１ａ、第２のリードＬ２の一端Ｌ２ａ、および、第３のリードＬ３の一端Ｌ３ａを封止するようになっている。   Further, the mold resin 102 is formed with the support member S3 exposed, the die pad 101, the semiconductor element 1, at least part of the first connection member S1, at least part of the second connection member S2, and the first lead L1. One end L1a, one end L2a of the second lead L2, and one end L3a of the third lead L3 are sealed.

なお、このモールド樹脂１０２には、図示省略の放熱フィンを、螺子を用いて取り付けるべく、螺子を挿通するための放熱のための開口部１０２ａが形成されている。   The mold resin 102 has an opening 102a for heat dissipation for inserting a screw so that a heat-dissipating fin (not shown) can be attached using the screw.

次に、以上のような構成を有する半導体装置１００の製造方法の一例について説明する。   Next, an example of a method for manufacturing the semiconductor device 100 having the above configuration will be described.

ここで、図６は、実施例１に係る半導体装置１００の製造方法のフローの一例を示す図である。この図６のフローでは、特に、導電性を有する第１、第２の接続部材Ｓ１、Ｓ２と、第１の接続部材Ｓ１と第２の接続部材Ｓ２との間を支持する支持部材Ｓ３と、を有する接続子Ｓにより、リードと半導体素子１とを電気的に接続する方法について示している。   Here, FIG. 6 is a diagram illustrating an example of a flow of a manufacturing method of the semiconductor device 100 according to the first embodiment. In the flow of FIG. 6, in particular, the conductive first and second connection members S1, S2, and the support member S3 that supports the space between the first connection member S1 and the second connection member S2, This shows a method of electrically connecting the lead and the semiconductor element 1 by the connector S having the following.

図６に示すように、先ず、第１のリードＬ１が電気的に接続され且つ導電性を有する板状のダイパッド１０１上に、少なくとも３つの端子を有する半導体素子１を配置し、ダイパッド１０１の上面と半導体素子１の第１の端子１ａとを電気的に接続する（ステップＳ１）。   As shown in FIG. 6, first, the semiconductor element 1 having at least three terminals is disposed on a plate-like die pad 101 to which the first lead L1 is electrically connected and has conductivity, and the upper surface of the die pad 101 is arranged. Are electrically connected to the first terminal 1a of the semiconductor element 1 (step S1).

次に、半導体素子１の第２の端子１ｂと第２のリードＬ２の一端Ｌ２ａとを、第１の接続部材Ｓ１により電気的に接続するとともに、半導体素子１の第３の端子１ｃと第３のリードＬ３の一端Ｌ３ａとを第２の接続部材Ｓ２により電気的に接続する（ステップＳ２）。   Next, the second terminal 1b of the semiconductor element 1 and one end L2a of the second lead L2 are electrically connected by the first connecting member S1, and the third terminal 1c of the semiconductor element 1 and the third terminal L2a are connected to the third terminal 1c. The one end L3a of the lead L3 is electrically connected by the second connecting member S2 (step S2).

次に、モールド樹脂により、支持部材Ｓ３が露出した状態で、ダイパッド１０１、半導体素子１、第１の接続部材Ｓ１の少なくとも一部、第２の接続部材Ｓ２の少なくとも一部、第１のリードＬ１の一端Ｌ１ａ、第２のリードＬ２の一端Ｌ２ａ、および、第３のリードＬ３の一端Ｌ３ａを封止する（ステップＳ３）。   Next, the die pad 101, the semiconductor element 1, at least part of the first connection member S1, at least part of the second connection member S2, and the first lead L1 with the support member S3 exposed by the mold resin. One end L1a, one end L2a of the second lead L2, and one end L3a of the third lead L3 are sealed (step S3).

次に、第２のリードＬ２と第３のリードＬ３との間が絶縁されるように、支持部材Ｓ３の少なくとも一部を切断する（ステップＳ４）。   Next, at least a part of the support member S3 is cut so that the second lead L2 and the third lead L3 are insulated from each other (step S4).

なお、例えば、該リードフレームから第１ないし第３のリードＬ１〜Ｌ３を切り離すタイミングと、支持部材Ｓ３を切断するタイミングとが同時に設定される。例えば、プレス金型によりプレスカットすることにより、該リードフレームから第１ないし第３のリードＬ１〜Ｌ３を切り離すとともに、支持部材Ｓ３を切断する。   For example, the timing for separating the first to third leads L1 to L3 from the lead frame and the timing for cutting the support member S3 are set simultaneously. For example, the first to third leads L1 to L3 are separated from the lead frame by press cutting with a press die, and the support member S3 is cut.

以上のフローにより、図５に示す状態の半導体装置１００が完成する。   With the above flow, the semiconductor device 100 in the state shown in FIG. 5 is completed.

本発明の一態様に係る半導体装置では、第２のリードＬ２と第３のリードＬ３との間が絶縁されるように、支持部材Ｓ３の少なくとも一部が切断される。   In the semiconductor device according to one aspect of the present invention, at least a part of the support member S3 is cut so that the second lead L2 and the third lead L3 are insulated.

このような構成により、１つの接続子Ｓで２つの該第２、第３のリードＬ２、Ｌ３と該半導体素子１とを同時に接続することを可能にする。   With such a configuration, it is possible to simultaneously connect the second and third leads L2 and L3 and the semiconductor element 1 with one connector S.

そして、この半導体装置の製造方法においては、１つの接続子Ｓで２つのリードと半導体素子１とを同時に接続するので、リードと半導体素子１との接続に必要な時間や位置合わせ等の回数を削減することができ、半導体装置１００の製造コストを削減することができる。   In this method of manufacturing a semiconductor device, two leads and the semiconductor element 1 are simultaneously connected by one connector S. Therefore, the time required for the connection between the lead and the semiconductor element 1 and the number of times of alignment and the like are reduced. The manufacturing cost of the semiconductor device 100 can be reduced.

さらに、該接続子Ｓの該支持部材Ｓ３に切断用の切断用溝を設けたり、支持部材Ｓ３の厚さを該第２、第３のリードＬ２、Ｌ３よりも薄くしたりすることにより、より確実に該支持部材Ｓ３を切断することができる。   Further, by providing a cutting groove for cutting in the support member S3 of the connector S, or by making the thickness of the support member S3 thinner than the second and third leads L2, L3, The support member S3 can be reliably cut.

すなわち、該第２のリードＬ２と該第３のリードＬ３との間をより確実に絶縁して半導体装置の信頼性を向上することができる。   That is, the reliability of the semiconductor device can be improved by more reliably insulating the second lead L2 and the third lead L3.

なお、既述の実施例では、半導体装置１００が１つの半導体素子１を備えた場合の一例について説明したが、半導体装置１００が、複数の半導体素子１を備えるようにしてもよい。この場合、接続子Ｓの第１の接続部材Ｓ１は、複数の半導体素子１の第２の端子１ｂに一端が電気的に接続され、接続子Ｓの第２の接続部材Ｓ２は、複数の半導体素子１の第３の端子１ｃに一端が電気的に接続されることになる。   In the above-described embodiment, an example in which the semiconductor device 100 includes one semiconductor element 1 has been described. However, the semiconductor device 100 may include a plurality of semiconductor elements 1. In this case, one end of the first connection member S1 of the connector S is electrically connected to the second terminals 1b of the plurality of semiconductor elements 1, and the second connection member S2 of the connector S is a plurality of semiconductors. One end of the element 1 is electrically connected to the third terminal 1c.

なお、実施形態は例示であり、発明の範囲はそれらに限定されない。   In addition, embodiment is an illustration and the range of invention is not limited to them.

１ 半導体素子
１ａ 第１の端子
１ｂ 第２の端子
１ｃ 第３の端子
１００、１００Ａ 半導体装置
１０１ ダイパッド
１０２ モールド樹脂
１０２ａ 開口部
Ｌ１ 第１のリード
Ｌ１ａ 第１のリードの一端
Ｌ２ 第２のリード
Ｌ２ａ 第２のリードの一端
Ｌ３ 第３のリード
Ｌ３ａ 第３のリードの一端
Ｍ１ 第１の嵌合用溝
Ｍ２ 第２の嵌合用溝
Ｓ 接続子
Ｓ１ 第１の接続部材
Ｓ１ａ 第１の接続部材の一端
Ｓ１ｂ 第１の接続部材の他端
Ｓ２ 第２の接続部材
Ｓ２ａ 第２の接続部材の一端
Ｓ２ｂ 第２の接続部材の他端
Ｓ３ 支持部材 DESCRIPTION OF SYMBOLS 1 Semiconductor element 1a 1st terminal 1b 2nd terminal 1c 3rd terminal 100, 100A Semiconductor device 101 Die pad 102 Mold resin 102a Opening L1 1st lead L1a 1st lead L2 2nd lead L2a 2nd lead One end L3 of the lead 2 Third lead L3a One end M1 of the third lead M1 First fitting groove M2 Second fitting groove S Connector
S1 first connection member S1a one end S1b of the first connection member second end S2 of the first connection member second connection member S2a one end of the second connection member S2b other end S3 of the second connection member support member

Claims (13)

導電性を有する板状のダイパッドと、
前記ダイパッド上に配置され、少なくとも３つの端子を有し、前記ダイパッドの上面と第１の端子が電気的に接続された半導体素子と、
前記ダイパッドと電気的に接続された第１のリードと、
前記半導体素子の第２の端子に一端が電気的に接続され導電性を有する第１の接続部材と、前記半導体素子の第３の端子に一端が電気的に接続され導電性を有する第２の接続部材と、前記第１の接続部材と前記第２の接続部材との間を支持する支持部材と、を有する接続子と、
前記第１の接続部材の他端に一端が電気的に接続された第２のリードと、
前記第２の接続部材の他端に一端が電気的に接続された第３のリードと、
前記支持部材が露出した状態で、前記ダイパッド、前記半導体素子、前記第１の接続部材の少なくとも一部、前記第２の接続部材の少なくとも一部、前記第１のリードの一端、前記第２のリードの一端、および、前記第３のリードの一端を封止するモールド樹脂と、を備え、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部が切断される
ことを特徴とする半導体装置。 A plate-shaped die pad having conductivity;
A semiconductor element disposed on the die pad and having at least three terminals, the upper surface of the die pad and the first terminal being electrically connected;
A first lead electrically connected to the die pad;
A first connecting member having one end electrically connected to the second terminal of the semiconductor element and having conductivity; and a second connecting member having one end electrically connected to the third terminal of the semiconductor element and having conductivity. A connector having a connection member, and a support member that supports between the first connection member and the second connection member;
A second lead having one end electrically connected to the other end of the first connecting member;
A third lead having one end electrically connected to the other end of the second connection member;
With the support member exposed, the die pad, the semiconductor element, at least part of the first connection member, at least part of the second connection member, one end of the first lead, the second A mold resin for sealing one end of the lead and one end of the third lead;
At least a part of the support member is cut so that the second lead and the third lead are insulated from each other. 前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部が除去される
ことを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein at least a part of the support member is removed so that the second lead and the third lead are insulated from each other. 前記支持部材の除去される部分には、切断のための切断用溝が形成されていることを特徴とする請求項２に記載の半導体装置。   The semiconductor device according to claim 2, wherein a cutting groove for cutting is formed in a portion where the support member is removed. 前記切断用溝は、前記支持部材の切断の方向に沿って形成されていることを特徴とする請求項３に記載の半導体装置。   The semiconductor device according to claim 3, wherein the cutting groove is formed along a cutting direction of the support member. 前記支持部材の除去される部分の厚さは、前記第２のリードおよび前記第３のリードの厚さよりも薄い
ことを特徴とする請求項１ないし４のいずれか一項に記載の半導体装置。 5. The semiconductor device according to claim 1, wherein a thickness of a portion where the support member is removed is thinner than thicknesses of the second lead and the third lead. 前記半導体素子の前記第１の端子は前記半導体素子の下面に配置され、前記半導体素子の前記第２の端子および前記第３の端子は前記半導体素子の上面に配置されている
ことを特徴とする請求項１ないし５のいずれか一項に記載の半導体装置。 The first terminal of the semiconductor element is disposed on a lower surface of the semiconductor element, and the second terminal and the third terminal of the semiconductor element are disposed on an upper surface of the semiconductor element. The semiconductor device according to claim 1. 前記第２のリードの一端に第１の嵌合用溝が形成されており、
前記第１の接続部材の他端は、前記第１の嵌合用溝に嵌合された状態で前記第２のリードの一端に接続され、
前記第３のリードの一端に第２の嵌合用溝が形成されており、
前記第２の接続部材の他端は、前記第２の嵌合用溝に嵌合された状態で前記第３のリードの一端に接続されている
ことを特徴とする請求項１ないし６のいずれか一項に記載の半導体装置。 A first fitting groove is formed at one end of the second lead;
The other end of the first connecting member is connected to one end of the second lead in a state of being fitted in the first fitting groove,
A second fitting groove is formed at one end of the third lead;
The other end of the second connection member is connected to one end of the third lead in a state of being fitted into the second fitting groove. The semiconductor device according to one item. 前記第１の接続部材の他端は、前記第２のリードの一端の側面と接続され、前記第２の接続部材の他端は、前記第３のリードの一端の側面と接続されている
ことを特徴とする請求項１ないし６のいずれか一項に記載の半導体装置。 The other end of the first connecting member is connected to a side surface of one end of the second lead, and the other end of the second connecting member is connected to a side surface of one end of the third lead. The semiconductor device according to claim 1, wherein: 前記第２のリードの一端の上面および前記第３のリードの一端の上面の前記ダイパッドの上面に対する高さは、前記第１の接続部材の他端の上面および前記第２の接続部材の他端の上面の前記ダイパッドの上面に対する高さと等しい
ことを特徴とする請求項７または８に記載の半導体装置。 The height of the upper surface of one end of the second lead and the upper surface of one end of the third lead with respect to the upper surface of the die pad is such that the upper surface of the other end of the first connecting member and the other end of the second connecting member The semiconductor device according to claim 7, wherein the upper surface of the semiconductor device is equal to a height of the upper surface of the die pad. 前記半導体素子の前記第１の端子と前記ダイパッドの上面とは、半田付けにより電気的に接続されていることを特徴とする請求項１ないし７のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the first terminal of the semiconductor element and the upper surface of the die pad are electrically connected by soldering. 導電性を有する第１、第２の接続部材と、前記第１の接続部材と前記第２の接続部材との間を支持する支持部材と、を有する接続子により、リードと半導体素子とを電気的に接続する半導体装置の製造方法であって、
第１のリードが電気的に接続され且つ導電性を有する板状のダイパッド上に、少なくとも３つの端子を有する半導体素子を配置し、前記ダイパッドの上面と前記半導体素子の第１の端子とを電気的に接続する第１の工程と、
前記半導体素子の第２の端子と第２のリードの一端とを、前記第１の接続部材により電気的に接続するとともに、前記半導体素子の第３の端子と第３のリードの一端とを前記第２の接続部材により電気的に接続する第２の工程と、
モールド樹脂により、前記支持部材が露出した状態で、前記ダイパッド、前記半導体素子、前記第１の接続部材の少なくとも一部、前記第２の接続部材の少なくとも一部、前記第１のリードの一端、前記第２のリードの一端、および、前記第３のリードの一端を封止する第３の工程と、
前記第２のリードと前記第３のリードとの間が絶縁されるように、前記支持部材の少なくとも一部を切断する第４の工程と、を備える
ことを特徴とする半導体装置の製造方法。 The lead and the semiconductor element are electrically connected to each other by a connector having first and second conductive connecting members and a supporting member that supports between the first connecting member and the second connecting member. A method for manufacturing a semiconductor device to be connected,
A semiconductor element having at least three terminals is disposed on a plate-like die pad to which the first lead is electrically connected and has conductivity, and the upper surface of the die pad and the first terminal of the semiconductor element are electrically connected. A first step of automatically connecting;
The second terminal of the semiconductor element and one end of the second lead are electrically connected by the first connecting member, and the third terminal of the semiconductor element and one end of the third lead are connected to the first terminal. A second step of electrically connecting by a second connecting member;
With the mold resin, with the support member exposed, the die pad, the semiconductor element, at least part of the first connection member, at least part of the second connection member, one end of the first lead, A third step of sealing one end of the second lead and one end of the third lead;
And a fourth step of cutting at least a part of the support member so that the second lead and the third lead are insulated from each other. A method for manufacturing a semiconductor device, comprising: リードフレームから前記第１ないし第３のリードを切り離すタイミングと、前記支持部材を切断するタイミングとが同時である
ことを特徴とする請求項１１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 11 , wherein a timing for separating the first to third leads from the lead frame and a timing for cutting the support member are simultaneous. プレス金型によりプレスカットすることにより、前記リードフレームから前記第１ないし第３のリードを切り離すとともに、前記支持部材を切断する
ことを特徴とする請求項１１に記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 11 , wherein the first to third leads are separated from the lead frame and the support member is cut by press-cutting with a press die.
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