JP5609607B2 - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- JP5609607B2 JP5609607B2 JP2010274124A JP2010274124A JP5609607B2 JP 5609607 B2 JP5609607 B2 JP 5609607B2 JP 2010274124 A JP2010274124 A JP 2010274124A JP 2010274124 A JP2010274124 A JP 2010274124A JP 5609607 B2 JP5609607 B2 JP 5609607B2
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- Prior art keywords
- layer
- electrode
- nitride
- based semiconductor
- semiconductor layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 152
- 150000004767 nitrides Chemical class 0.000 title claims description 123
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 37
- 230000002265 prevention Effects 0.000 claims description 18
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 264
- 239000010408 film Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 21
- 230000003405 preventing effect Effects 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VFMMPHCGEFXGIP-UHFFFAOYSA-N 7,8-Benzoflavone Chemical compound O1C2=C3C=CC=CC3=CC=C2C(=O)C=C1C1=CC=CC=C1 VFMMPHCGEFXGIP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910019017 PtRh Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- Led Devices (AREA)
Description
(実施の形態1)
(基板1)
(n型窒化物系半導体層、活性領域3、p型窒化物系半導体層)
(n側電極7n、p側電極7p)
(透光性電極6)
(パッド電極)
(拡散防止層72)
(バリア層81)
(窒化物系半導体発光素子のパッド電極の製造方法)
(窒化物系半導体層の形成:S10)
(n側電極用コンタクト領域の形成:S20)
(透光性電極6の形成:S30)
(パッド電極の形成:S40)
(熱処理:S44)
(保護膜9の形成:S50)
[実施例]
(窒化物系半導体発光素子の作製)
(窒化物系半導体層の形成)
(n側電極用コンタクト領域の形成)
(透光性電極6の形成)
(パッド電極の形成)
(パッド電極の熱処理)
(保護膜9の形成)
(実施例1〜3 密着性の加速試験)
(拡散防止効果確認試験)
1…基板
2…n型半導体層
3…活性領域
4…p型半導体層
6a…透光性電極
6b…p側パッド電極
7…パッド電極;7n…n側電極;7p…p側電極
9…保護膜
10…半導体構造
70…Ti層
71…オーミック接触層;71a…第一金属層;71b…第二金属層71b
72…拡散防止層
73…ボンディング層
81…バリア層
82…密着層
Claims (2)
- 窒化物系の半導体層と、
前記半導体層上に設けられた、複数の金属層を積層して構成される電極構造と、
を備える窒化物系半導体発光素子であって、
前記電極構造は、
前記半導体層側に配置される第一金属層と、
前記第一金属層上に配置される第二金属層と、
前記第二金属層上に配置されるボンディング層と、
を含み、
前記第一金属層は、前記半導体層側から順に配置されたTi層とRh層との2層からなり、前記Rh層は前記Ti層から部分的に露出しており、
前記第二金属層は、Hfを含み、
前記ボンディング層は、Auを含み、
前記電極構造はさらに、前記第二金属層とボンディング層との間に、Ruを含む拡散防止層を有することを特徴とする窒化物系半導体発光素子。 - 請求項1に記載の窒化物系半導体発光素子であって、
前記拡散防止層の膜厚が、50nm以上であることを特徴とする窒化物系半導体発光素子。
Priority Applications (1)
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---|---|---|---|
JP2010274124A JP5609607B2 (ja) | 2010-12-08 | 2010-12-08 | 窒化物系半導体発光素子 |
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---|---|---|---|
JP2010274124A JP5609607B2 (ja) | 2010-12-08 | 2010-12-08 | 窒化物系半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012124342A JP2012124342A (ja) | 2012-06-28 |
JP5609607B2 true JP5609607B2 (ja) | 2014-10-22 |
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JP2010274124A Expired - Fee Related JP5609607B2 (ja) | 2010-12-08 | 2010-12-08 | 窒化物系半導体発光素子 |
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JP (1) | JP5609607B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6400281B2 (ja) * | 2013-09-12 | 2018-10-03 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 複数の発光構造を有する発光素子 |
JP2016015375A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社タムラ製作所 | 発光素子 |
JP6384533B2 (ja) * | 2015-12-21 | 2018-09-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10199533B2 (en) | 2015-12-21 | 2019-02-05 | Nichia Corporation | Method of manufacturing light emitting device |
JP6504221B2 (ja) * | 2016-09-29 | 2019-04-24 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10043956B2 (en) | 2016-09-29 | 2018-08-07 | Nichia Corporation | Method for manufacturing light emitting device |
JP7068577B2 (ja) * | 2018-03-28 | 2022-05-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008041866A (ja) * | 2006-08-04 | 2008-02-21 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2010147097A (ja) * | 2008-12-16 | 2010-07-01 | Showa Denko Kk | 半導体素子および半導体素子の製造方法 |
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2010
- 2010-12-08 JP JP2010274124A patent/JP5609607B2/ja not_active Expired - Fee Related
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