JP5605823B2 - 表示装置及びその製造方法 - Google Patents
表示装置及びその製造方法 Download PDFInfo
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- JP5605823B2 JP5605823B2 JP2009109954A JP2009109954A JP5605823B2 JP 5605823 B2 JP5605823 B2 JP 5605823B2 JP 2009109954 A JP2009109954 A JP 2009109954A JP 2009109954 A JP2009109954 A JP 2009109954A JP 5605823 B2 JP5605823 B2 JP 5605823B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000007715 excimer laser crystallization Methods 0.000 claims 1
- 238000005224 laser annealing Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 nitrogen nitride Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8794—Arrangements for heating and cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
20 バッファー層(窒素化層)
30 バッファー層(酸化層)
35 隔離層
40 ヒートシンク層
50 非晶質シリコン層
60 第1多結晶シリコン層
61 第2多結晶シリコン層
100 スイッチ用薄膜トランジスタ
200 駆動用薄膜トランジスタ
250 発光素子
300 光センサー
400 キャパシター
Claims (10)
- 表示装置の製造方法であって、
第1領域と第2領域を有する基板層を提供する段階と、
前記基板層の前記第1領域と第2領域にバッファー層を形成する段階と、
前記第2領域のバッファー層にヒートシンク層を形成する段階と、
前記第2領域のヒートシンク層に隔離層を形成する段階と、
前記第1領域のバッファー層と前記第2領域の隔離層に非晶質シリコン層を形成する段階と、
結晶化工程により、前記第1領域の非晶質シリコン層と前記第2領域の非晶質シリコン層を違う結晶特性を有する第1多結晶シリコン層と第2多結晶シリコン層に転化させる段階と、
前記第1領域に前記第1多結晶シリコン層を含むスイッチ用薄膜トランジスタを形成する段階と、
前記第2領域に前記第2多結晶シリコン層を含む駆動用薄膜トランジスタを形成する段階と、を含み、
前記第1多結晶シリコン層のキャリア移動度は、前記第2多結晶シリコン層のキャリア移動度よりも高い、ことを特徴とする表示装置の製造方法。 - 前記結晶化工程はエキシマレーザー結晶法であることを特徴とする請求項1に記載の表示装置の製造方法。
- 前記製造方法はさらに、前記第2領域に前記第2多結晶シリコン層を含む光センサーが形成され、且つ前記ヒートシンク層は前記光センサーに照らす光線を反射することを特徴とする請求項1に記載の表示装置の製造方法。
- 前記製造方法はさらに、前記第2領域に前記第2多結晶シリコン層を含むキャパシターが形成され、且つ前記ヒートシンク層としては前記キャパシターの一つ電極であることを特徴とする請求項1に記載の表示装置の製造方法。
- 第1領域と第2領域を有する基板層と、前記基板層の第1領域に形成された第1多結晶シリコン層を含むスイッチ用薄膜トランジスタと、前記基板層の第2領域に形成された第2多結晶シリコン層、ヒートシンク層及びその間にある隔離層を含む駆動用薄膜トランジスタとを有して、前記第1多結晶シリコン層のキャリア移動度は、前記第2多結晶シリコン層のキャリア移動度よりも高い、ことを特徴とする表示装置。
- 前記スイッチ用薄膜トランジスタはさらに、前記基板層に形成されたバッファー層と、前記バッファー層に形成された前記第1多結晶シリコン層とを含み、前記駆動用薄膜トランジスタはさらに、前記基板層に形成された前記バッファー層と、前記バッファー層に形成された前記ヒートシンク層と、前記ヒートシンク層に形成された前記隔離層と、前記隔離層に形成された前記第2多結晶シリコン層とを含むことを特徴とする請求項5に記載の表示装置。
- 前記第1多結晶シリコン層と第2多結晶シリコン層とは、違う結晶構造を有することを特徴とする請求項5に記載の表示装置。
- 前記表示装置はさらに、前記第2領域に前記第2多結晶シリコン層を含む光センサーが形成され、且つ前記ヒートシンク層は前記光センサーに照らす光線を反射することを特徴とする請求項5に記載の表示装置。
- 前記表示装置はさらに、前記第2領域に前記第2多結晶シリコン層を含むキャパシターが形成され、且つ前記ヒートシンク層としては前記キャパシターの一つ電極であることを特徴とする請求項5に記載の表示装置。
- 請求項5に記載の表示装置を有する電子装置であって、携帯電話、ディジタルカメラ、PDA、ノートブック、コンピュータ、テレビ、車用表示装置、GPS、航空表示装置、デジタルフレーム或いは携帯式DVDプレーヤーであることを特徴とする電子装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097116022A TWI389211B (zh) | 2008-04-30 | 2008-04-30 | 影像顯示系統及其製造方法 |
TW097116022 | 2008-04-30 |
Publications (2)
Publication Number | Publication Date |
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JP2009272625A JP2009272625A (ja) | 2009-11-19 |
JP5605823B2 true JP5605823B2 (ja) | 2014-10-15 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009109954A Active JP5605823B2 (ja) | 2008-04-30 | 2009-04-28 | 表示装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8115208B2 (ja) |
JP (1) | JP5605823B2 (ja) |
TW (1) | TWI389211B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101752400B1 (ko) * | 2010-09-03 | 2017-06-30 | 삼성디스플레이 주식회사 | 다결정 규소층의 형성 방법, 상기 다결정 규소층을 포함하는 박막 트랜지스터 및 유기 발광 장치 |
WO2014024371A1 (ja) | 2012-08-10 | 2014-02-13 | パナソニック株式会社 | 半導体発光装置 |
CN104465702B (zh) * | 2014-11-03 | 2019-12-10 | 深圳市华星光电技术有限公司 | Amoled背板的制作方法 |
CN105514035B (zh) * | 2016-01-21 | 2018-11-20 | 武汉华星光电技术有限公司 | 低温多晶硅tft基板的制作方法及低温多晶硅tft基板 |
JP7007080B2 (ja) * | 2016-07-19 | 2022-02-10 | 株式会社ジャパンディスプレイ | Tft回路基板 |
US10388644B2 (en) * | 2016-11-29 | 2019-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing conductors and semiconductor device which includes conductors |
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US6847050B2 (en) * | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
US7405033B2 (en) * | 2003-01-17 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing resist pattern and method for manufacturing semiconductor device |
US7615488B2 (en) * | 2004-03-19 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device |
US7642038B2 (en) * | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
US7259110B2 (en) * | 2004-04-28 | 2007-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device and semiconductor device |
US7491590B2 (en) * | 2004-05-28 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor in display device |
US7582904B2 (en) * | 2004-11-26 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and method for manufacturing thereof, and television device |
US7687326B2 (en) * | 2004-12-17 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI562380B (en) * | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7732330B2 (en) * | 2005-06-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method using an ink-jet method of the same |
US7655566B2 (en) * | 2005-07-27 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI427682B (zh) * | 2006-07-04 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
US20080042131A1 (en) * | 2006-08-15 | 2008-02-21 | Tpo Displays Corp. | System for displaying images including thin film transistor device and method for fabricating the same |
KR101346246B1 (ko) * | 2006-08-24 | 2013-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 제작방법 |
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2008
- 2008-04-30 TW TW097116022A patent/TWI389211B/zh not_active IP Right Cessation
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2009
- 2009-04-28 JP JP2009109954A patent/JP5605823B2/ja active Active
- 2009-04-29 US US12/432,510 patent/US8115208B2/en active Active
Also Published As
Publication number | Publication date |
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US8115208B2 (en) | 2012-02-14 |
JP2009272625A (ja) | 2009-11-19 |
US20090272978A1 (en) | 2009-11-05 |
TW200945446A (en) | 2009-11-01 |
TWI389211B (zh) | 2013-03-11 |
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