JP5605729B2 - 絶縁材料に囲まれた導電デバイス、および電圧構造を電気的に遮蔽する方法 - Google Patents

絶縁材料に囲まれた導電デバイス、および電圧構造を電気的に遮蔽する方法 Download PDF

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Publication number
JP5605729B2
JP5605729B2 JP2010521991A JP2010521991A JP5605729B2 JP 5605729 B2 JP5605729 B2 JP 5605729B2 JP 2010521991 A JP2010521991 A JP 2010521991A JP 2010521991 A JP2010521991 A JP 2010521991A JP 5605729 B2 JP5605729 B2 JP 5605729B2
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Prior art keywords
conductor
insulating
conductive device
segments
insulating material
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JP2010521991A
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Japanese (ja)
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JP2010537386A (ja
JP2010537386A5 (OSRAM
Inventor
テクレサディック、カセーン、ディー．
クラウス、ステファン、イー．
ヘルマンソン、エリック、ディー．
ロウ、ラッセル、ジェイ．
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2010537386A publication Critical patent/JP2010537386A/ja
Publication of JP2010537386A5 publication Critical patent/JP2010537386A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B17/00—Insulators or insulating bodies characterised by their form
    • H01B17/56—Insulating bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Insulators (AREA)
  • Cable Accessories (AREA)
  • Insulated Conductors (AREA)
  • Transformers For Measuring Instruments (AREA)
  • Insulation, Fastening Of Motor, Generator Windings (AREA)
JP2010521991A 2007-08-20 2008-08-20 絶縁材料に囲まれた導電デバイス、および電圧構造を電気的に遮蔽する方法 Active JP5605729B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/841,086 US7799999B2 (en) 2007-08-20 2007-08-20 Insulated conducting device with multiple insulation segments
US11/841,086 2007-08-20
PCT/US2008/073674 WO2009026340A2 (en) 2007-08-20 2008-08-20 Insulated conducting device with multiple insulation segments

Publications (3)

Publication Number Publication Date
JP2010537386A JP2010537386A (ja) 2010-12-02
JP2010537386A5 JP2010537386A5 (OSRAM) 2011-08-25
JP5605729B2 true JP5605729B2 (ja) 2014-10-15

Family

ID=40378967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010521991A Active JP5605729B2 (ja) 2007-08-20 2008-08-20 絶縁材料に囲まれた導電デバイス、および電圧構造を電気的に遮蔽する方法

Country Status (6)

Country Link
US (1) US7799999B2 (OSRAM)
JP (1) JP5605729B2 (OSRAM)
KR (1) KR101542493B1 (OSRAM)
CN (1) CN101903960B (OSRAM)
TW (1) TWI433191B (OSRAM)
WO (1) WO2009026340A2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999239B2 (en) * 2007-12-10 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing an electrical stress in an acceleration/deceleraion system
US8437156B2 (en) * 2009-08-06 2013-05-07 Gtat Corporation Mirror-image voltage supply
FR3001080B1 (fr) * 2013-01-11 2015-03-13 Schneider Electric Ind Sas Isolateur-support moyenne tension
CN103928281B (zh) * 2013-12-16 2017-08-25 宁波瑞曼特新材料有限公司 高压加速器的高压舱结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3209345A (en) * 1961-04-10 1965-09-28 Wayne George Corp Analog-to-digital shaft encoder
JPS5519754A (en) * 1978-07-29 1980-02-12 Fuji Electric Co Ltd Ground side shield structure for bushing
JPS5930629Y2 (ja) * 1978-08-14 1984-08-31 日新電機株式会社 直流高電圧発生装置
JPS56131078U (OSRAM) * 1980-03-06 1981-10-05
JPS6141218Y2 (OSRAM) * 1980-07-22 1986-11-25
JPS63292514A (ja) * 1987-05-26 1988-11-29 Matsushita Electric Works Ltd 露出配線用電線
JP3044382B2 (ja) * 1989-03-30 2000-05-22 キヤノン株式会社 電子源及びそれを用いた画像表示装置
JP2898658B2 (ja) * 1989-08-28 1999-06-02 株式会社日立製作所 多段加速方式荷電粒子線加速装置
JPH06283299A (ja) * 1993-03-25 1994-10-07 Ulvac Japan Ltd イオン加速装置
KR100219411B1 (ko) * 1995-11-24 1999-09-01 윤종용 반도체 이온주입설비의 패러데이컵 어셈블리
JPH1023620A (ja) * 1996-07-01 1998-01-23 Toshiba Corp 電界緩和装置
SE9704461L (sv) * 1997-11-28 1999-05-29 Asea Brown Boveri Förfarande vid tillverkning av stator till roterande elektrisk maskin
IL151155A0 (en) * 2000-02-11 2003-04-10 Varian Semiconductor Equipment Methods and apparatus for operating high energy accelerator in low energy mode
JP4111441B2 (ja) * 2003-02-25 2008-07-02 独立行政法人 日本原子力研究開発機構 放電破壊防止機能を有する大口径静電加速器
JP2005108796A (ja) * 2003-09-29 2005-04-21 Taiyo Material:Kk 固体誘電体及び低気圧ガス絶縁による静電加速器
WO2006070744A1 (ja) * 2004-12-28 2006-07-06 Kyoto Institute Of Technology 荷電粒子発生装置及び加速器

Also Published As

Publication number Publication date
JP2010537386A (ja) 2010-12-02
TWI433191B (zh) 2014-04-01
CN101903960B (zh) 2012-12-05
US20090050347A1 (en) 2009-02-26
WO2009026340A3 (en) 2009-04-23
WO2009026340A2 (en) 2009-02-26
TW200910404A (en) 2009-03-01
KR20100053652A (ko) 2010-05-20
CN101903960A (zh) 2010-12-01
KR101542493B1 (ko) 2015-08-06
US7799999B2 (en) 2010-09-21

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