JP5596123B2 - 有限の耐久性および／または持続性を有するメモリ装置からのモニタ・データの情報を分析する方法およびシステム - Google Patents

有限の耐久性および／または持続性を有するメモリ装置からのモニタ・データの情報を分析する方法およびシステム Download PDF

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JP5596123B2
JP5596123B2 JP2012503953A JP2012503953A JP5596123B2 JP 5596123 B2 JP5596123 B2 JP 5596123B2 JP 2012503953 A JP2012503953 A JP 2012503953A JP 2012503953 A JP2012503953 A JP 2012503953A JP 5596123 B2 JP5596123 B2 JP 5596123B2
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data
monitor data
memory
monitor
block
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JP2012523599A (ja
JP2012523599A5 (enExample
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カベラック、ウィリアム、ジョン
ヘッツラー、スティーブン、ロバート
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International Business Machines Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0409—Online test

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Debugging And Monitoring (AREA)
JP2012503953A 2009-04-08 2010-03-25 有限の耐久性および／または持続性を有するメモリ装置からのモニタ・データの情報を分析する方法およびシステム Expired - Fee Related JP5596123B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/420,628 2009-04-08
US12/420,628 US8316173B2 (en) 2009-04-08 2009-04-08 System, method, and computer program product for analyzing monitor data information from a plurality of memory devices having finite endurance and/or retention
PCT/EP2010/053943 WO2010115726A2 (en) 2009-04-08 2010-03-25 Analyzing monitor data information from memory devices having finite endurance and/or retention

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JP2012523599A JP2012523599A (ja) 2012-10-04
JP2012523599A5 JP2012523599A5 (enExample) 2014-05-01
JP5596123B2 true JP5596123B2 (ja) 2014-09-24

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US (2) US8316173B2 (enExample)
EP (1) EP2417603B1 (enExample)
JP (1) JP5596123B2 (enExample)
CN (1) CN102301427A (enExample)
WO (1) WO2010115726A2 (enExample)

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Also Published As

Publication number Publication date
EP2417603B1 (en) 2018-04-25
US8316173B2 (en) 2012-11-20
WO2010115726A2 (en) 2010-10-14
US20130013968A1 (en) 2013-01-10
JP2012523599A (ja) 2012-10-04
US20100262795A1 (en) 2010-10-14
CN102301427A (zh) 2011-12-28
EP2417603A2 (en) 2012-02-15
WO2010115726A3 (en) 2010-12-23
US8554989B2 (en) 2013-10-08

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