JP5575404B2 - Mems製造のためのエアロゲルベースの型 - Google Patents
Mems製造のためのエアロゲルベースの型 Download PDFInfo
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- JP5575404B2 JP5575404B2 JP2009008849A JP2009008849A JP5575404B2 JP 5575404 B2 JP5575404 B2 JP 5575404B2 JP 2009008849 A JP2009008849 A JP 2009008849A JP 2009008849 A JP2009008849 A JP 2009008849A JP 5575404 B2 JP5575404 B2 JP 5575404B2
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 53
- 239000000126 substance Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000004964 aerogel Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000007847 structural defect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- FUWMBNHWYXZLJA-UHFFFAOYSA-N [Si+4].[O-2].[Ti+4].[O-2].[O-2].[O-2] Chemical compound [Si+4].[O-2].[Ti+4].[O-2].[O-2].[O-2] FUWMBNHWYXZLJA-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
- A01K97/00—Accessories for angling
- A01K97/10—Supports for rods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2909/00—Use of inorganic materials not provided for in groups B29K2803/00 - B29K2807/00, as mould material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0037—Other properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/034—Moulding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S81/00—Tools
- Y10S81/01—Tool-support adjuncts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24496—Foamed or cellular component
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
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- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Animal Husbandry (AREA)
- Biodiversity & Conservation Biology (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
量、濃度、およびその他のパラメータが、ある範囲または上限値、下限値のリストとして与えられる場合、範囲が別々に開示されているかどうかに関わらず、任意の上限および下限の任意の対から形成されるあらゆる範囲が明示的に開示されていることを理解されたい。本明細書で範囲が数値で示される場合、明示しないかぎり、その範囲は、その範囲の端点およびその範囲内のあらゆる整数および有理数を含むことを意図している。範囲を画定する場合、その特定の値に本発明の範囲を限定することは意図されていない。
本明細書で用いられる、「有する」、「有している」、「含む」、「含んでいる」、「備える」、「備えている」等の語、あるいはそれら類似の語は、非排他的な包含を意図している。たとえば、ある構成要素のリストを有するプロセス、方法、物品または装置は、それらの構成要素のみに限定される必要はなく、リストに明示されていない構成要素、またはそのプロセス、方法、物品、装置に固有の構成要素を含む。さらに、反対の明示をしない限り、「または(or)」との語は、両方を含むことを許容し、二者択一的な意味ではない。たとえば、「AまたはB」との条件は、以下のいずれかの場合に満たされる。すなわち、Aが真(または存在する)であり且つBが偽(または存在しない)である場合、Aが偽(または存在しない)であり且つBが真(または存在する)である場合、AおよびBの両方が真(または存在する)である場合のいずれか1つの場合に上記条件を満たす。
「エアロゲル」は、アルコゲルから、固体部分を実質的に損傷することなく実質的に液体を取り除くことにより得られる、低密度の固体状態の物質であり、アルコゲルの体積の少なくとも約50%の固体を含有する物質であると定義される。この定義によれば、エアロゲルは、純粋な酸化シリコンエアロゲルのように単一の化学組成で全体が形成されている必要はなく、シリコンチタン酸化物あるいはその類似物のような、複数のゲル形成物の組み合わせを含んでよい。また、エアロゲルは、付加物および/または不純物の存在が、アルコゲルの形成を妨げない限り、または、その後のアルコゲルからエアロゲルへの転化を妨げない限り、付加物および/または不純物を含んでもよい。この定義によれば、エアロゲルは、全体が均一の組成を備える必要はない。
「基板」は、エアロゲルベース層を有する材料層の下に位置し、構造的な支持を提供する材料層である。このエアロゲルベース層を有する材料層は、この基板に直接的な物理的接触を維持している必要はない。たとえば、中間層または中間の副次層が存在してもしなくてもよい。
本明細書で用いられる「表面外形」は、特徴の表面特性の3次元的な位置に関する表面の幾何学的特徴であると定義される。それゆえ、2つの特徴の表面外形が比較される場合(たとえば、一方の特徴の表面外形が他方の特徴の表面外形と実質的に同一であるという場合)、この比較は、互いの特徴内の表面特性の相対的な位置にのみ基づく。従って、2つまたはそれ以上の特徴の表面外形の比較は、絶対的な寸法のあらゆる考慮を除外する。本明細書で用いられる場合、この語句は、一般に、少なくとも部分的にエアロゲル層の除去により形成された構造的特徴の表面外形、および、微小電気機械特徴の少なくとも一部の表面外形のいずれにも関連する。
本発明の重い材料層は、体積基準で約50%より少ないガスを含む材料を有する。一実施形態において、重い材料は体積基準で約40%より少ないガスを含む材料を有する。他の実施形態において、重い材料は体積基準で約35%より少ないガスを含む材料を有する。他の実施形態において、重い材料は体積基準で約32%より少ないガスを含む材料を有する。
Claims (4)
- 微小電気機械装置の構造を形成するための型であって、
前記型は、
基板と、
前記基板上に堆積されたエアロゲルベース層を有し、前記エアロゲルベース層は、
(a)100nmから1mmの間の厚さを備え、
(b)金属酸化物、および、微小電気機械特徴の少なくとも一部の表面外形と実質的に同一の表面外形を備える構造的特徴を有し、
前記エアロゲルベース層は、前記構造的特徴の前記表面外形の上に形成された重い材料層を残すように前記基板から取り除くことができ、前記重い材料層は、前記微小電気機械特徴の少なくとも一部を有する、型。 - 請求項1に記載の型であって、
前記エアロゲルベース層は酸化シリコンを有する、型。 - 請求項1に記載の型であって、
前記エアロゲルベース層は、酸化アルミニウム、酸化クロム、酸化チタン、または酸化スズを有する、型。 - 請求項1に記載の型であって、
前記構造的特徴の前記表面外形は、流体混合装置、格子、または可撓性ダイアフラムを有する微小電気機械装置の表面外形に対応する、型。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/017,944 | 2008-01-22 | ||
US12/017,944 US8851442B2 (en) | 2008-01-22 | 2008-01-22 | Aerogel-bases mold for MEMS fabrication and formation thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014126143A Division JP2014205237A (ja) | 2008-01-22 | 2014-06-19 | Mems製造のためのエアロゲルベースの型およびその形成方法 |
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Publication Number | Publication Date |
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JP2009172759A JP2009172759A (ja) | 2009-08-06 |
JP5575404B2 true JP5575404B2 (ja) | 2014-08-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009008849A Expired - Fee Related JP5575404B2 (ja) | 2008-01-22 | 2009-01-19 | Mems製造のためのエアロゲルベースの型 |
JP2014126143A Pending JP2014205237A (ja) | 2008-01-22 | 2014-06-19 | Mems製造のためのエアロゲルベースの型およびその形成方法 |
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JP2014126143A Pending JP2014205237A (ja) | 2008-01-22 | 2014-06-19 | Mems製造のためのエアロゲルベースの型およびその形成方法 |
Country Status (4)
Country | Link |
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US (2) | US8851442B2 (ja) |
EP (1) | EP2082990A3 (ja) |
JP (2) | JP5575404B2 (ja) |
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US8851442B2 (en) * | 2008-01-22 | 2014-10-07 | Honeywell International Inc. | Aerogel-bases mold for MEMS fabrication and formation thereof |
NL2005244A (en) * | 2009-09-22 | 2011-03-23 | Asml Netherlands Bv | Support or table for lithographic apparatus, method of manufacturing such support or table and lithographic apparatus comprising such support or table. |
US8293657B2 (en) | 2010-11-05 | 2012-10-23 | Honeywell International Inc. | Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes |
CN106440339A (zh) * | 2016-10-30 | 2017-02-22 | 侴乔力 | 带回热预热功能的虹吸加热储热罐 |
WO2020081597A1 (en) | 2018-10-15 | 2020-04-23 | Aharon Alon S | Magnetic puncture access and delivery systems and methods |
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US5395805A (en) * | 1993-03-25 | 1995-03-07 | Regents Of The University Of California | Method for making monolithic metal oxide aerogels |
US5658832A (en) * | 1994-10-17 | 1997-08-19 | Regents Of The University Of California | Method of forming a spacer for field emission flat panel displays |
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US8851442B2 (en) * | 2008-01-22 | 2014-10-07 | Honeywell International Inc. | Aerogel-bases mold for MEMS fabrication and formation thereof |
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Publication number | Publication date |
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EP2082990A3 (en) | 2013-10-02 |
US8851442B2 (en) | 2014-10-07 |
US20090184088A1 (en) | 2009-07-23 |
US20140349078A1 (en) | 2014-11-27 |
EP2082990A2 (en) | 2009-07-29 |
KR20090080918A (ko) | 2009-07-27 |
US9138918B2 (en) | 2015-09-22 |
JP2009172759A (ja) | 2009-08-06 |
JP2014205237A (ja) | 2014-10-30 |
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