JP5574699B2 - Technology for glass mounting of image sensor packages - Google Patents

Description

  This application claims priority as a continuation-in-part of US patent application Ser. No. 12 / 136,033, filed Jun. 9, 2008, entitled “Method of Attaching Glass on a Die for an Image Sensor”. And claims the priority of US Provisional Application No. 60 / 942,953, filed June 8, 2007, entitled “Method of Attaching Glass on a Die for an Image Sensor”, The contents of each are incorporated herein by reference.

  The following generally relates to a wafer level packaging (WLP) method for attaching glass to a wafer substrate prior to dicing, and more particularly a low cost method for packaging a CMOS or CCD type image sensor. Thus, the image sensor is protected from particulate contamination and stress damage during assembly.

  Particle contamination of the microlens or the image sensor during the assembly of the micro electro-optical module causes a failure of the module. Fine particles account for 90% of the yield loss during the camera module assembly process. In higher resolution devices, the yield loss due to particulates increases with smaller pixel sizes. For example, in a 3 megapixel sensor, the pixel size is less than 2 microns. If only one pixel is blocked before a single particle causes image quality degradation, the maximum allowable particle size in this application is limited to 2 microns in diameter. In order to limit the number of particles of this size, strict particle control measures are required during the camera module assembly process to avoid yield loss. These particulate contamination measures increase the cost of the assembly process.

  WLP processing helps address the contamination issues that exist in chip-on-board (COB) technology methods. This yield improvement is achieved by using a glass layer to protect the active area of the sensor from contamination prior to wafer singulation and device installation. Fine particles adhering to the top surface of the glass / lens are separated from the sensor by the thickness of the glass layer (typically 0.3 to 0.4 mm), so the maximum allowable fine particle size is It can be about 25 microns in diameter before it becomes a factor of deterioration. Furthermore, a unit that cannot perform its performance due to particulate contamination on the glass surface can be easily regenerated by reworking. The yield of the camera module assembly process is thus significantly improved using wafer level packaging methods.

  Currently used (eg, Tessera's Shellcase CF) WLP processes attach a wafer-sized glass plate to the top of the cavity wall on the sensor side of the wafer, thus creating an optical cavity on each sensor. This method is followed by glass singulation and wafer backgrinding. Finally, the wafer is singulated into individual devices. While this process shows an improvement in yield over the COB process, it creates significant stress on the circuit inside the silicon and increases yield loss.

  Another WLP process (eg, Schott OPTO-WLP) further demonstrates some advantages in yield management. The first step in this process is to protect sensitive active structures with a glass cover. Wafer bonding with special adhesives provides a selective range of adhesives within the adhesive layer. In the next step, the bonded silicon-glass sandwich structure is thinned from the silicon side (back side). In the next step, vias are etched on the silicon side to release bond pads on the backside of the wafer, and contacts are redistributed to the backside of the wafer and to the ball mounting. This process therefore requires the formation of vias / passages, and multiple layers of lead / insulator material and many processing steps are highly dependent on manual trial and error methods. As a result, using this process results in significantly longer lead times and increased process instability.

The present invention has been made with respect to such a background art.
The following embodiments and their aspects are described in conjunction with other systems, tools, and methods that are illustrated and meant by way of illustration and are not limited to the claims. In various embodiments, one or more of the above-described problems are reduced or eliminated, while other embodiments are directed to other improvements.

  A wafer level packaging process for a semiconductor image sensor device includes temporarily mounting a substantially wafer size glass plate on a glass wafer fixture, and a processed wafer having a plurality of assembled optical image sensors. The steps of singulating the glass plate, attaching the cavity wall to the glass to produce a singulated glass die generally corresponding to the pattern above, and the singulated glass die with the cavity wall processed Aligning the glass wafer fixture to the processed wafer to be aligned with the image sensor pattern on the wafer and creating a sensor-cavity wall-glass sandwich structure with internal cavities. Cavitation of a pieced glass die Walls, processing method comprising the steps of bonding the optical image sensor, and a step of releasing from the glass wafer fixture singulated glass die by an adhesive.

  The step of temporarily attaching the glass wafer to the glass wafer fixture may be performed by applying a pattern of curable adhesive that corresponds to the pattern of the image sensor on the wafer device. The gluing step may include applying an adhesive to the singulated glass die. The step of gluing may include applying an adhesive to the surface of the image sensor. The adhesive can be a UV curable optical adhesive. The step of gluing may include exposing the device-cavity wall-glass sandwich structure to UV light to cure the adhesive. The gluing process may include setting a distance between the image sensor and the glass cover.

  The sensor-cavity wall-glass sandwich structure can be diced to make individual devices prior to releasing the structure from the glass wafer fixture. The sensor-cavity wall-glass sandwich structure can be diced to make individual devices after releasing the structure from the glass wafer fixture. Dividing the glass plate may include the additional step of providing a taper along the glass thickness dimension. Releasing the singulated glass die may include exposing the adhesive that holds the glass die to the glass fixture to UV light. The cavity wall can be attached to the glass plate prior to singulation. The cavity wall can be attached to the singulated glass die after singulation. The glass wafer fixture includes a metal frame carrier that supports a film having an adhesive.

  A wafer level packaging process for a semiconductor image sensor device includes temporarily attaching a substantially wafer-sized glass plate onto a glass wafer fixture, attaching a cavity wall to the glass plate, and singulation. Separating the glass plates to produce a shaped glass die, wherein each of the separated glass dies corresponds to a pattern on a processed wafer having a plurality of assembled optical image sensors. Dividing the glass wafer fixture into the processed wafer so that the singulated glass die with the cavity wall and the singulated glass die with the cavity wall align with the pattern of the image sensor on the processed wafer. Aligning step and sensor having an internal cavity Cavity Wall-Bonding the cavity wall of an individualized glass die to an optical image sensor with an adhesive to make a glass sandwich structure, and the individualized glass die to a glass wafer fixture And releasing from.

  The cavity wall may be attached to the glass plate before attaching the plate onto the glass plate fixture. The cavity wall can be attached to the glass plate after mounting the plate on the glass plate fixture. The glass plate fixture may include a metal frame carrier that supports a film having an adhesive thereon.

  A wafer level packaging process for a semiconductor image sensor device includes temporarily mounting a substantially wafer size glass plate on a glass wafer fixture, and a processed wafer having a plurality of assembled optical image sensors. Singulating the glass plate to produce a singulated glass die corresponding to the pattern above, attaching the cavity wall to the treated wafer, and processing the singulated glass die with the cavity wall. Aligning the glass wafer fixture to the processed wafer so that it is aligned with the image sensor pattern on the finished wafer and optical to create a sensor-cavity wall-glass sandwich structure with an internal cavity. Keys related to image sensors Processing method comprising the step of releasing the steps of bonding the singulated been glass dies in Activity wall, a singulated glass die from the glass wafer fixture.

  A wafer level packaging process for a semiconductor image sensor device includes temporarily mounting a substantially wafer size glass plate on a glass wafer fixture, and a processed wafer having a plurality of assembled optical image sensors. Separating the glass plate to produce a singulated glass die corresponding to the pattern above, so that the singulated glass die is generally aligned with the image sensor pattern on the processed wafer. Aligning the glass wafer fixture to the treated wafer; and bonding the singulated glass die to the optical image sensor with an adhesive to create a sensor-adhesive-glass sandwich structure; , And the individualized glass die is fixed to the glass wafer. Processing method comprising the step of releasing the ingredients.

  The step of temporarily attaching the glass wafer to the glass wafer fixture may be performed by applying a pattern of curable adhesive corresponding to the image sensor pattern on the device wafer. The step of bonding (bonding) may include applying an adhesive to the singulated glass die. The adhering step may include applying an adhesive to the surface of the image sensor. The adhesive may be a UV curable optical adhesive. The step of adhering may include exposing the device-adhesive-glass sandwich structure to UV light to cure the adhesive. The bonding process may include setting a distance between the image sensor and the glass cover. The sensor-adhesive-glass sandwich structure can be diced to make individual devices before releasing the structure from the glass wafer fixture. The sensor-adhesive-glass sandwich structure can be diced to make individual devices after releasing the structure from the glass wafer fixture. Dividing the glass plate may include the additional step of providing a taper along the glass thickness dimension. Releasing the singulated glass die may include exposing the adhesive that holds the glass die to the glass fixture to UV light.

In addition to the illustrative aspects and embodiments described above, further aspects and embodiments will become apparent by reference to the drawings and by studying the following detailed description.
Exemplary embodiments are shown in the reference drawings. The embodiments and drawings disclosed herein are intended to be considered illustrative rather than limiting.

(A) is a cross-sectional view illustrating an attachment step in which a wafer-sized glass is attached to a glass wafer fixture on a glass wafer transfer means, and (b) is applied to the glass wafer fixture to hold the glass wafer. The figure which shows the adhesive agent pattern. (A) is a figure which shows the state by which a glass wafer is separated into a predetermined shape using a sawing apparatus, (b) is a figure which shows the arbitrary steps which provide a taper to the separated glass die, (c) ) Is a sectional view of an individual glass wafer attached to a fixture. It is sectional drawing which illustrates the inverted glass wafer conveyance means in the state which a glass wafer fixing tool and the glass wafer separated into pieces have the relationship which opposes the CMOS wafer which has a several image sensor apparatus, (a) FIG. 5 is a diagram illustrating one embodiment in which an adhesive is applied to an image sensor, and FIG. 6B is a diagram illustrating another embodiment in which the adhesive is applied to a glass die that is singulated. FIG. 5 is a cross-sectional view illustrating the steps of attaching a flipped and singulated glass die after alignment with a wafer of a CMOS image sensor. Sectional drawing which illustrates the releasing step in which the bonded CMOS wafer and glass wafer are released from the glass wafer fixture. (A) is a cross-sectional view illustrating a singulation step in one embodiment, wherein the CMOS image sensor device bonded to glass is separated using a die cutter after being released from the glass wafer fixture; (B) is sectional drawing which shows the image sensor separated into pieces which has the glass adhere | attached on the sensor. Sectional drawing which is a deformation | transformation embodiment which shows a part of glass of wafer size, Comprising: While the glass is attached to UV dicing tape, it has a cavity wall attached to the other side of glass. The perspective view of the glass wafer which has an adhesive film which forms a cavity wall. The perspective view which shows the state by which the glass wafer of FIG. 7 is separated into pieces with a saw (saw). FIG. 4 is an exemplary view of a back grinding step in which a wafer having a plurality of image sensors is ground back. (A) And (b) is a figure which shows use of the glass support fixture in attaching the glass separated to the image sensor wafer which has a some cavity wall. The figure which shows the open | release step in which a glass support fixture releases the singulated glass. The figure which shows the wafer individualization step. FIG. 6 is a cross-sectional view of a singulated image sensor package having a cover glass separated from the image sensor substrate by a plurality of cavity walls.

  Reference is made to the attached drawings which serve to illustrate various relevant features of the present invention. Although the present invention is primarily described as a process for attaching glass to an image sensor package, it is clearly understood that the present invention is applicable to other wafer level packaging applications where glass attachment is required / desired. Should. Alternatively, the material selection is not limited to glass and can extend beyond glass to any transparent or translucent material having properties such as anti-reflection, static resistance and light filtering. In this regard, the following description of the process for attaching the glass to the image sensor package is presented for purposes of illustration and explanation. Furthermore, this description is not intended to limit the invention to the form disclosed herein. As a result, changes and modifications commensurate with the following teachings, skills and knowledge of the relevant fields are within the scope of the claims of the present invention. The embodiments described herein are provided to illustrate known aspects of practicing the invention and to various other modifications required by other persons skilled in the art according to the particular application or use of the invention, or other It is further contemplated to utilize the present invention to enable embodiments.

  The inventor understands that WLP methods such as ShclcaseCF packaging, where the glass is singulated after the glass is attached to the device wafer, can damage the device. This damage may be due to mechanical stresses that occur during wafer back-grinding or glass singulation after attachment to the device wafer. Furthermore, the image sensor device can be damaged by electrostatic discharge caused by charging during the process of singulating the glass. Another cause of failure can include contamination of the electrical pad by glass fragments generated during the step of singulating the glass wafer. The proposed method aims to address these and other deficiencies.

  The proposed WLP method for a microelectronic image sensor device includes a step for mounting a thin singulated glass plate on a wafer substrate at the beginning of the device packaging process. The glass cover supports the apparatus during the die singulation step of wafer assembly. Furthermore, the glass cover prevents particulates from the surrounding environment from entering the microlens or image device.

  One embodiment of the glass mounting method relates to application to an image sensor (and microlens) assembled on a wafer. A glass wafer 10 (eg, 400 μm thick) is first temporarily attached to a glass wafer fixture 12 (which can be transparent) provided on the glass wafer transfer means 14 as shown in FIG. It is done. Temporary attachment can be achieved through the use of a matrix 16 of dicing tape (which can be cured using ultraviolet (UV) light), as shown in FIG. 1 (b). Temporary attachment can be further achieved using other adhesive materials. The pattern of the dicing tape matches the die pattern of the image sensor wafer, but is assembled to have a wider path than the image sensor wafer. In other words, each adhesive piece has a reduced footprint of the corresponding image sensor piece.

  The glass wafer 10 is then singulated (to match the die pattern on the image sensor wafer) as shown in FIGS. 2 (a) and 2 (b). Here, the glass pattern may be formed to have a narrower path than the image sensor wafer. In other words, each piece of glass has an enlarged footprint of the image sensor piece so that it exceeds the dimensions of the image sensor but does not overlap the electrical contact pads for the image sensor device. Furthermore, the edge 20 of the cover can be slightly tapered inward as shown in FIG. 2 (b) so that the surface bonded to the image sensor is larger than the opposite surface.

  After the singulated glass is cleaned, the glass wafer transport means and the glass wafer fixture holding the singulated glass (the assembly shown as 22) are shown in FIGS. As shown in b), the exposed surface of the singulated glass faces the image sensor wafer 24 and is inverted and aligned to project the pattern of the image sensor device on the device wafer. Making a slightly oversized cover can be an alignment step that is less susceptible to this placement or alignment error. The optical adhesive 26, as shown in FIG. 3 (a), allows each optical image sensor and its corresponding microlens (if available) to remain uncovered around the electrical contacts. It is selectively applied (applied) to the device wafer 24 to cover it. One aspect of the process involves controlling how the adhesive is applied (pattern and quality) and minimizing defects such as microbubbles that can degrade the quality of the image captured by the image sensor. Selection of an adhesive for conversion. Furthermore, since the adhesive eventually comes into contact with the external environment, the adhesive may be further required to have heat resistance and moisture resistance.

  In another embodiment, the optical adhesive 26 is applied (applied) to the singulated glass rather than the image sensor / lens combination, and the glass die is then, as shown in FIG. Bonded to the image sensor wafer 24. A method such as spin coating can be used to apply the adhesive 26 to a pieced glass die. Since optical adhesives are expensive and this process consumes more adhesive, it can potentially be performed during the process to make it cheaper to improve.

  The singulated glass wafers are then bonded to the image sensor wafer (assembly 30) without cavities between them, as shown in FIG. The dimensions of the adhesive application and the bonding process may include fixing the glass distance from the image sensor surface and may include making a glass / image sensor sandwich structure within certain limited parallelism. The sandwich structure 30 is released from the glass wafer fixture 12 as shown in FIG. Curing the adhesive and releasing the sandwich structure 30 from the glass wafer fixture 12 can be performed in the same step by judicious selection of UV wavelengths or specific temperatures and exposure times.

  The optical image sensor wafer structure 30 is then diced using a glass die for support as shown in FIG. 6 (a). In an alternative embodiment, dicing can be performed before the sandwich structure is released from the glass wafer fixture. A typical image sensor 32 having a protective glass cover is shown in FIG. This method of wafer level packaging is considered to be a low cost alternative to existing wafer level packaging processes used in the industry.

  Alternatively, the cover glass can be attached to the image sensor through the cavity wall to create an internal cavity, as shown in FIGS. As shown in FIG. 7, the sheet of glass 50 has a UV dicing tape 52 applied to one side of the sheet of glass 50. On the opposite side of the glass sheet 50, a plurality of cavity walls 54 are attached. The cavity wall is die cut from the LE tap. A layer of epoxy 56 is applied to the top surface of each cavity wall 54.

As shown in FIG. 8, the cavity wall 54 can be formed by using an adhesive film attached to a glass plate prior to singulation.
Next, as shown in FIG. 9, the glass sheet 50 is singulated by a dicing saw 58 into a plurality of individualized glass dies 60 held together by a UV dicing tape 52. On the other hand, as shown in FIG. 10, a silicon wafer 62 (having a plurality of individual image sensors 64 formed on the silicon wafer) is a polishing machine that back-grinds the silicon wafer 62 from the back side of the silicon wafer. By 66, it is polished to a desired thickness. Since this back grinding operation is performed on the silicon wafer 62, the operation can be performed before, during or after the steps of applying the cavity wall 54 to the glass sheet 50 and singulating the glass sheet 50.

  Thereafter, as shown in FIG. 11 (a), the singulated glass die 60 having the cavity wall 54 is aligned with the individual image sensors 64 on the silicon wafer 62. The separated glass die 60 is held in a state of being aligned with the silicon wafer 62 by the glass fixture 70. The glass fixture 70 is temporarily attached to the glass sheet 50 before, during or after application of the cavity wall 54 and singulation to the separating glass die 60. As shown in FIG. 11 (b), the glass fixture 70 and the silicon wafer 62 move relative to each other to bring the epoxy 56 on the cavity wall 54 into contact with the silicon wafer 62 at a position surrounding the individual image sensors 64. Is done. By this operation, the cavity wall 54 is bonded to the silicon wafer 62.

  To release the glass fixture 70 from the assembly, a UV light source (not shown) provides UV light that causes the glass fixture 70 to release the singulated glass die 60, as shown in FIG. To do. The outer surface of the singulated glass die 60 is cleaned (not shown). Next, the same or different dicing saw 72 is used to cut the silicon wafer 62 at a location outside the cavity wall 54 and between the individual singulated glass dies 60, as shown in FIG. Is done. In this way, the silicon wafer 62 is separated into individual image sensor packages 74, one of which is shown in FIG.

  The foregoing description of the present invention has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the invention to the embodiments disclosed herein. Consequently, variations and modifications commensurate with the above teachings and skills and knowledge of the relevant art are within the scope of the claims of the present invention. The embodiments described herein above describe the best mode known for practicing the present invention, and the present invention, along with various modifications required by others skilled in the art to the particular application or use of the present invention. It is further intended to make it possible to utilize such or other embodiments. It is intended that the appended claims be construed to include alternative embodiments to the extent permitted by one skilled in the art.

Claims (46)

A wafer level packaging processing method for a semiconductor image sensor device, comprising:
Temporarily mounting a substantially wafer-sized glass plate on the glass wafer fixture;
Singulating the glass plate to produce a singulated glass die corresponding to a pattern on a processed wafer having a plurality of assembled optical image sensors;
And attaching the cavity walls to the glass die,
Aligning the glass wafer fixture to the processed wafer such that the singulated glass die having the cavity wall is aligned with the pattern of the optical image sensor on the processed wafer. When,
Bonding the cavity wall of the singulated glass die to the optical image sensor with an adhesive to make a sensor-cavity wall-glass sandwich structure with an internal cavity;
Releasing the singulated glass die from the glass wafer fixture ;
The method of temporarily attaching the glass plate to the glass wafer fixture is performed by applying a pattern of curable adhesive corresponding to the pattern of the optical image sensor on the processed wafer .   The processing method according to claim 1, wherein the adhering step includes applying an adhesive to the singulated glass die.   The processing method according to claim 1, wherein the adhering step includes applying an adhesive to a surface of the optical image sensor. The processing method according to claim 1, wherein the adhesive used in the adhering step is a UV curable optical adhesive. 5. The method of claim 4 , wherein the gluing step comprises exposing the device-cavity wall-glass sandwich structure to UV light to cure the adhesive. Process, comprising the step of setting the distance between the glass die and the optical image sensor, the processing method of claim 1, wherein the adhesive.   The processing method of claim 1, wherein the sensor-cavity wall-glass sandwich structure is diced to make individual devices prior to releasing the structure from the glass wafer fixture.   The processing method of claim 1, wherein the sensor-cavity wall-glass sandwich structure is diced to form individual devices after releasing the structure from the glass wafer fixture. The processing method according to claim 1, wherein the step of singulating the glass plate includes an additional step of providing a taper along a thickness dimension of the glass plate . The processing method according to claim 1, wherein releasing the singulated glass die comprises exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light.   The processing method according to claim 1, wherein the cavity wall is attached to the glass plate before singulation.   The processing method according to claim 1, wherein the cavity wall is attached to the singulated glass die after singulation. The processing method according to claim 1, wherein the glass wafer fixture includes a metal frame carrier that supports a film having the curable adhesive thereon. A wafer level packaging processing method for a semiconductor image sensor device, comprising:
Temporarily mounting a substantially wafer-sized glass plate on the glass wafer fixture;
Attaching a cavity wall to the glass plate;
Singulating the glass plate to make individualized glass dies, each of the individualized glass dies having a pattern on a processed wafer having a plurality of assembled optical image sensors; And having a cavity wall corresponding to
Aligning the glass wafer fixture to the processed wafer such that the singulated glass die having the cavity wall is aligned with the pattern of the optical image sensor on the processed wafer. When,
Bonding the cavity wall of the singulated glass die to the optical image sensor with an adhesive to make a sensor-cavity wall-glass sandwich structure with an internal cavity;
Releasing the singulated glass die from the glass wafer fixture ;
The method of temporarily attaching the glass plate to the glass wafer fixture is performed by applying a pattern of curable adhesive corresponding to the pattern of the optical image sensor on the processed wafer . The processing method of claim 14 , wherein the cavity wall is attached to the glass plate before attaching the glass plate to the glass wafer fixture. It said glass plate after mounting on the glass wafer fixture, the cavity wall is attached to the glass plate, the processing method according to claim 14. The processing method according to claim 14 , wherein the glass wafer fixture includes a metal frame carrier that supports a film having the curable adhesive thereon. A wafer level packaging processing method for a semiconductor image sensor device, comprising:
Temporarily mounting a substantially wafer-sized glass plate on the glass wafer fixture;
Singulating the glass plate to produce a singulated glass die corresponding to a pattern on a processed wafer having a plurality of assembled optical image sensors;
Attaching a cavity wall to the processed wafer;
Aligning the glass wafer fixture to the processed wafer such that the singulated glass die is aligned with the pattern of the optical image sensor on the processed wafer having the cavity walls. When,
Bonding the singulated glass die to the cavity wall associated with the optical image sensor to produce a sensor-cavity wall-glass sandwich structure having an internal cavity;
Releasing the singulated glass die from the glass wafer fixture ;
The method of temporarily attaching the glass plate to the glass wafer fixture is performed by applying a pattern of curable adhesive corresponding to the pattern of the optical image sensor on the processed wafer . The processing method according to claim 18 , wherein the glass wafer fixture includes a metal frame carrier that supports a film having an adhesive thereon. A wafer level packaging processing method for a semiconductor image sensor device, comprising:
Temporarily mounting a substantially wafer-sized glass plate on the glass wafer fixture;
Singulating the glass plate to produce a singulated glass die corresponding to a pattern on a processed wafer having a plurality of assembled optical image sensors;
Aligning the glass wafer fixture to the processed wafer such that the singulated glass die is aligned with the pattern of the optical image sensor on the processed wafer;
Bonding the singulated glass die to the optical image sensor with an adhesive to make a sensor-adhesive-glass sandwich structure;
Releasing the singulated glass die from the glass wafer fixture ;
The method of temporarily attaching the glass plate to the glass wafer fixture is performed by applying a pattern of curable adhesive corresponding to the pattern of the optical image sensor on the processed wafer . 21. The processing method according to claim 20 , wherein the adhering step includes applying an adhesive to the singulated glass die. The processing method according to claim 20 , wherein the adhering step includes applying an adhesive to a surface of the optical image sensor. The processing method according to claim 20 , wherein the adhesive used in the adhering step is a UV curable optical adhesive. 24. The processing method of claim 23 , wherein the step of adhering comprises exposing the device-adhesive-glass sandwich structure to UV light to cure the adhesive. Process, comprising the step of setting a distance between said optical image sensor the glass die and processing method according to claim 20 for the adhesive. 21. The processing method of claim 20 , wherein the sensor-adhesive-glass sandwich structure is diced to make individual devices prior to releasing the structure from the glass wafer fixture. 21. The processing method of claim 20 , wherein the sensor-adhesive-glass sandwich structure is diced to make individual devices after releasing the structure from the glass wafer fixture . 21. The processing method according to claim 20 , wherein the step of dividing the glass plate includes an additional step of providing a taper along a thickness dimension of the glass plate . 21. The processing method of claim 20 , wherein releasing the singulated glass die comprises exposing the curable adhesive that holds the glass die to the glass wafer fixture to UV light. The adhesive of the sensor-adhesive-glass sandwich structure is a UV curable optical adhesive;
The step of adhering comprises exposing the sensor-adhesive-glass sandwich structure to UV light to cure the UV curable optical adhesive;
Exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light and exposing the sensor-adhesive-glass sandwich structure to UV light are performed simultaneously. Item 30. A processing method according to Item 29. 21. The process of claim 20, wherein the adhesive used in the step of bonding the individualized glass die to the optical image sensor is in contact with the optical image sensor and the individualized glass die. Method. Each of the optical image sensors includes an array of microlenses formed on each optical image sensor itself, and the adhesive used in the step of bonding the singulated glass die to the optical image sensor is the optical image sensor. 32. The processing method according to claim 31, wherein the image sensor is in contact with the microlens of the image sensor and the individualized glass die. The processing method according to claim 20, wherein the pattern of the curable adhesive that holds the glass plate on the glass wafer fixture is a two-dimensional matrix. The processing method according to claim 33, wherein the step of applying the pattern of the curable adhesive includes attaching a dicing tape in accordance with the pattern of the optical image sensor. The adhesive of the sensor-cavity wall-glass sandwich structure is a UV curable optical adhesive;
The step of adhering comprises exposing the sensor-cavity wall-glass sandwich structure to UV light to cure the UV curable optical adhesive;
Exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light and exposing the sensor-cavity wall-glass sandwich structure to UV light are performed simultaneously. Item 11. The processing method according to Item 10. The processing method according to claim 1, wherein the pattern of the curable adhesive that holds the glass plate on the glass wafer fixture is a two-dimensional matrix. The processing method according to claim 36, wherein the step of applying the pattern of the curable adhesive includes attaching a dicing tape according to the pattern of the optical image sensor. The processing method according to claim 1, wherein the cavity wall is die-cut. Releasing the singulated glass die comprises exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light;
The adhesive of the sensor-cavity wall-glass sandwich structure is a UV curable optical adhesive;
The step of adhering comprises exposing the sensor-cavity wall-glass sandwich structure to UV light to cure the UV curable optical adhesive;
The step of exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light and the step of exposing the sensor-cavity wall-glass sandwich structure to UV light are performed simultaneously. Item 15. The processing method according to Item 14. The processing method according to claim 14, wherein the pattern of the curable adhesive that holds the glass plate on the glass wafer fixture is a two-dimensional matrix. 41. The processing method according to claim 40, wherein the step of applying the pattern of the curable adhesive includes attaching a dicing tape according to the pattern of the optical image sensor. The processing method according to claim 14, wherein the cavity wall is die-cut. Releasing the singulated glass die comprises exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light;
The curable adhesive of the sensor-cavity wall-glass sandwich structure is a UV curable optical adhesive;
The step of adhering comprises exposing the sensor-cavity wall-glass sandwich structure to UV light to cure the UV curable optical adhesive;
The step of exposing the curable adhesive holding the glass die to the glass wafer fixture to UV light and the step of exposing the sensor-cavity wall-glass sandwich structure to UV light are performed simultaneously. Item 19. A processing method according to Item 18. The processing method according to claim 18, wherein the pattern of the curable adhesive that holds the glass plate on the glass wafer fixture is a two-dimensional matrix. 45. The processing method according to claim 44, wherein the step of applying the pattern of the curable adhesive includes attaching a dicing tape according to the pattern of the optical image sensor. The processing method according to claim 18, wherein the cavity wall is die-cut.

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