CN101326641A - Solid state imaging device and manufacturing method thereof - Google Patents
Solid state imaging device and manufacturing method thereof Download PDFInfo
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- CN101326641A CN101326641A CNA2006800464993A CN200680046499A CN101326641A CN 101326641 A CN101326641 A CN 101326641A CN A2006800464993 A CNA2006800464993 A CN A2006800464993A CN 200680046499 A CN200680046499 A CN 200680046499A CN 101326641 A CN101326641 A CN 101326641A
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Abstract
To a transparent substrate (20) on which a plurality of spacers (5) are formed, an infrared cut filter (IRCF) substrate (27) is attached. The IRCF substrate (27) has a coefficient of thermal expansion smaller than the transparent substrate (20) and approximately equal to a wafer (31). Next, the transparent substrate (20) is diced into plural pieces to form a plurality of cover glasses (6). Then heat cure adhesive (32) is coated on each spacer (5) and the spacers (5) are attached on the wafer (31) on which a plurality of light receiving section (3) and pads (10) are previously formed. Finally, the heat cure adhesive (32) is heated to be cured.
Description
Technical field
The present invention relates to solid imaging element and preparation method thereof, relate more specifically to solid imaging element of chip size package type and preparation method thereof.
Background technology
In order to dwindle the size of digital camera, mobile phone etc., the size that need dwindle the solid imaging element of institute's combination.Traditional solid imaging element forms like this, makes the image sensor chip that will have light receiving part be contained in the encapsulation of gas-tight seal, for example ceramic packaging.Yet the solid imaging element of CSP (chip size packages) type is widely used recently.CSP type solid imaging element forms like this, makes at first to introduce dividing plate (spacer) to be enclosed in the periphery of the light receiving part on the image sensor chip, and transparent then cover glass is attached on the described dividing plate with the described light receiving part of gas-tight seal.Therefore, formed solid imaging element have with as the image sensor chip of bare chip small size about the same.
Manufacture method as the solid imaging element of CSP type has proposed a kind of method (for example, referring to disclosed Japan Patent No.2002-231921) of finishing described encapsulation on wafer.In this manufacture method, at first with form the wafer of a plurality of light receiving parts on it and on it transparent substrates (material of cover glass) of a plurality of dividing plates of formation link to each other, make each dividing plate around corresponding light receiving part, wafer and transparent substrates are cut into square according to light receiving part then, to form a plurality of solid imaging elements simultaneously.
Simultaneously, wish from the single wafer that limits size, to generate as far as possible image sensor chip as much as possible.Therefore, the sealed width (width of dividing plate) that is used for the light receiving part encapsulation wishes to narrow down to about 100 microns.This sealed width of CSP type solid imaging element is little more a lot of than the width of general 500 microns to 1 millimeter conventional seals.In order to obtain enough sealing properties, need to use suitable bonding by little sealed width.For the adhesive of CSP type solid imaging element, the room temperature setting adhesive that has hot setting adhesive by being heating and curing, the UV Photocurable adhesive by applying the UV photocuring and solidify following time lapse by room temperature.Yet all methods all have merits and demerits.
Hot setting adhesive has high glass transition point (Tg), and at high temperature shows excellent sealing performance and favorable waterproof property.Because hot setting adhesive has low reactivity, when on the wiring pattern that described hot setting adhesive is used for wafer, electric current can not occur and leak or other problem.In addition, because hot setting adhesive can solidify at short notice, so extraordinary productivity ratio is arranged.
Yet have such problem: hot setting adhesive need heat to realize curing.The cover glass of solid imaging element is made by low alpha ray glass usually, destroys the photodiode of light receiving part to prevent alpha ray.The thermal coefficient of expansion of described low alpha ray glass is approximately 6.7ppm/ ℃, and it is approximately the twice of wafer thermal coefficient of expansion (being generally 2ppm/ ℃ to 4ppm/ ℃).Therefore, when adopt hot setting adhesive realize transparent substrates and wafer in conjunction with the time because the thermal coefficient of expansion difference between these two substrates after substrate turns back to room temperature from high temperature, several millimeters warpage can may occur in the substrate of institute's combination.Warpage may be destroyed substrate, even perhaps substrate does not have destroyedly, also can produce harmful effect to subsequent technique.
The UV cure adhesive at high temperature has sealing characteristics and fire resistance characteristic, and reactivity and curing rate equate with hot setting adhesive, and do not need heating process to realize solidifying.Therefore, the UV cure adhesive is applicable to the combination of components that comprises low alpha ray glass.Yet the UV cure adhesive can not be used for the combination of dividing plate and wafer, because dividing plate is to be made of the material such as silicon, they are transmissive UV light not.
Because room temperature setting adhesive does not need to apply heat or light is realized solidifying, so can use it in conjunction with wafer and dividing plate.Yet room temperature setting adhesive has high reaction activity, may cause on the wiring pattern of wafer that electric current leaks or other problem.In addition, because room temperature setting adhesive has low glass transition point (Tg), sealing characteristics at high temperature and fire resistance characteristic deficiency.In addition, room temperature setting adhesive needs long-time (for example 16 hours) to realize solidifying, so productivity ratio is very low.
In addition, solid imaging element can produce heat in the picture catching operation.Because thermal coefficient of expansion is different between image sensor chip and cover glass because the difference of thermal expansion when being heated, between image sensor chip and the dividing plate and the combination between dividing plate and the cover glass may be insecure.
An object of the present invention is to provide a kind of solid imaging element and preparation method thereof, the problems referred to above that occur when preventing from combined process to use hot setting adhesive and UV cure adhesive.
Another object of the present invention has provided a kind of solid imaging element and preparation method thereof, and is insecure with the curing that the heat that prevents in the picture catching operation causes.
Summary of the invention
With other purpose, solid imaging element of the present invention comprises to achieve these goals: image sensor chip is provided with the light receiving part that is used to carry out opto-electronic conversion on it; Dividing plate appends to image sensor chip, is used for the periphery around described light receiving part; And transparent cover glass, append to described dividing plate, be used for the space that seal diaphragm surrounds; And at least one optical sheet, append to described cover glass.Optical sheet is made of optical functional materials, filter function for example, and its thermal coefficient of expansion is approximate identical with image sensor chip.
The thermal coefficient of expansion of optical sheet is preferably 2ppm/ ℃ to 5ppm/ ℃, and approximately the thermal coefficient of expansion with the typical image sensor chip that is made of silicon equates.In addition, in order to adjust the thermal coefficient of expansion of cover glass and the destruction that prevents the combination between each parts by optical sheet, preferably, cover glass is that thermal coefficient of expansion approximates or greater than the low alpha ray glass of the thermal coefficient of expansion of optical sheet.
Optical sheet is infrared cut filter (infrared cut filter), optical low-pass filter, antireflection filter or the like.
Preferably, described parts come combination by the adhesive with glass transition point of at least 120 ℃.Particularly, combining by UV cure adhesive between dividing plate and the cover glass and between cover glass and optical sheet with glass transition point of at least 120 ℃, and between imageing sensor and dividing plate by having the hot setting adhesive combination of glass transition point of at least 120 degree.
The manufacture method of solid imaging element of the present invention comprises: the technology that seals a plurality of light receiving parts that are provided with on the wafer respectively; And with described light receiving part accordingly cut crystal to make the technology of a plurality of image sensor chips.The described a plurality of light receiver division techniques that seal respectively on the wafer comprise: form a plurality of dividing plates on a surface of transparent substrates, so that each dividing plate and the corresponding technology of each light receiving part, wherein said transparent substrates is the material of cover glass; Before or after dividing plate forms technology, with the technology of another surperficial solidifying of at least one support substrates and transparent substrates.Described support substrates is the material of optical sheet, and has and the about identical thermal coefficient of expansion of wafer.Being used to seal the light receiver division technique also comprises: excise transparent substrates on support substrates, so that keep to form the technology of a plurality of cover glass with the corresponding part of each light receiving part; Utilize hot setting adhesive with each dividing plate and wafer process combined; And cut described support substrates accordingly so that form the technology of a plurality of optical sheets with each light receiving part.
In addition, each dividing plate and wafer process combined are comprised: utilize hot setting adhesive to apply the technology of each dividing plate; Be added to technology on the wafer of each dividing plate; And the technology of heating so that described hot setting adhesive is cured.
According to solid imaging element of the present invention, because the optical sheet that thermal coefficient of expansion is approximately equal to image sensor chip is attached on the cover glass, the thermal expansion of adjusting cover glass to prevent because the warpage in the parts of the solid imaging element that the thermal conductance that produces during imaging operation causes or break.In addition, owing to have the approximate thermal coefficient of expansion identical or bigger with optical sheet as the low alpha ray glass of cover glass, the thermal expansion of therefore can more effective adjustment hanging down alpha ray glass.
Because optical sheet is infrared cut filter, optical low-pass filter, antireflection filter or the like, compares with conventional method, can see that letter is used on technology and the cost of making solid imaging element.In addition, because imageing sensor and dividing plate are by having the hot setting adhesive combination of at least 120 ℃ glass transition point, electric current can taking place leak, and even also can suitably seal described light receiving part under high temperature and high humidity.
Manufacture method according to solid imaging element of the present invention, owing to the support substrates that will have with wafer approximately equal thermal coefficient of expansion appends to transparent substrates, excise transparent substrates to form cover glass on ground, support substrates top then, even therefore when adopting hot setting adhesive, support substrates can be subjected to the influence of the thermal expansion of cover glass hardly.Therefore, prevented owing to thermal coefficient of expansion difference between the substrate causes the reason of warpage and destruction.
In addition, because single support substrates additional produced a plurality of solid imaging elements, each solid imaging element comprises the optical sheet such as infrared cut filter, can boost productivity.
Description of drawings
Fig. 1 shows the perspective view of the outward appearance of solid imaging element of the present invention;
Fig. 2 shows the sectional view of described solid imaging element structure;
Fig. 3 shows the flow chart of the manufacture craft of solid-state image device;
Fig. 4 shows the flow chart of the 5th process;
Fig. 5 A shows the key diagram of first technology;
Fig. 5 B shows the key diagram of second technology;
Fig. 5 C shows the key diagram of the 3rd technology;
Fig. 5 D shows the key diagram of the 4th technology;
Fig. 5 E shows the key diagram of the 5th technology;
Fig. 5 F shows the key diagram of the 6th technology; And
Fig. 5 G shows the key diagram of the 7th technology.
Embodiment
The structure of various details solid imaging element.As depicted in figs. 1 and 2, solid imaging element 2 comprises: have the image sensor chip 4 that light receiving part 3 is set on the surface thereon; Append to the shaped as frame dividing plate 5 on image sensor chip 4 upper surfaces, be used to surround described light receiving part 3; Append to the transparent cover glass 6 on the dividing plate 5, be used to seal described light receiving part 3; And append to infrared cut filter 7 (as optical sheet) on the cover glass 6, be used to eliminate infrared light.
Next, the manufacture method of solid imaging element 2 of the present invention is described with reference to the flow chart of Fig. 3 and Fig. 4 and the sectional view of Fig. 5 A to Fig. 5 G.Shown in Fig. 5 A, in the 1st technology, silicon substrate 21 (material of dividing plate 5) is bonded on the surface of transparent substrates 20 (material of cover glass 6).As mentioned above, transparent substrates 20 is low alpha ray glass, has the thickness that is about 6.7ppm/ ℃ of thermal coefficient of expansion and 500 μ m, and described transparent substrates 20 formation external diameters are 8 inches circular discs.Silicon substrate 21 has 2ppm/ ℃ to 4ppm/ ℃ thermal coefficient of expansion and 100 μ m thickness, and the formation external diameter is 8 inches a circular discs.
For transparent substrates 20 and silicon substrate 21 are combined, use UV cure adhesive 21.For example, UV cure adhesive 24 has the viscosity of 400000cps and 145 ℃ Tg or the viscosity of 127000cps and 144 ℃ Tg, and is coated in by spin coating method or other method on the surface of transparent substrates 20.Have the UV cure adhesive of at least 120 ℃ of Tg by use, even under high temperature and high humidity, also can suitably seal described light receiving part 3.
Shown in Fig. 5 B, in the 2nd technology, a plurality of dividing plates 5 form from silicon substrate 21.For example, dividing plate 5 can form by following step.At first, resist is coated on the silicon substrate 21 by spin coating or other method, and resist is carried out preliminary drying.Next, expose, develop and hard baking (hardbake) by the mask pattern of photoetching method dividing plate 5 shapes.Then, by anisotropic dry etch silicon substrate 21 is shaped as a plurality of dividing plates 5.Resist and the UV cure adhesive 24 stayed on the dividing plate 5 remove by oxygen ashing (ashing) or chemical cleaning method.
Shown in Fig. 5 C, in the 3rd technology, infrared cut filter substrate (following is the IRCF substrate) 27, i.e. support substrates, adhere to transparent substrates 20 with its on be formed with on surface (dividing plate the forms the surface) facing surfaces of dividing plate 5.After this, has the transparent substrates 20 of dividing plate 5 and the unit of the IRCF substrate 27 that combines with it is called seal substrate 28.As mentioned above, IRCF substrate 27 has about 4.5ppm/ ℃ thermal coefficient of expansion and the thickness of 500 μ m.The shape of IRCF substrate 27 is circular discs, and its external diameter is 8 inches identical with silicon substrate 21 diameters with transparent substrates 20, or rectangle or the polygon bigger than transparent substrates 20.
For in conjunction with transparent substrates 20 and IRCF substrate 27, use UV cure adhesive 24.UV cure adhesive 24 is coated in a surface of IRCF substrate 27 by spin coating method or other method.Transparent substrates 20 and IRCF substrate 27 combination under vacuum environment enter in the mating surface so that prevent air bubble.By vacuum pressure, two substrate closely contacts each other.After combination, UV cure adhesive 24 is fixed by the UV light that passes 27 irradiations of IRCF substrate.
It should be noted that, not transmission of the infrared cut filter UV light of some type, when using such infrared cut filter, can use the visible-light curing adhesive to replace UV cure adhesive 24. in addition, because the combination between transparent substrates 20 and the IRCF substrate 27 is irrelevant with the sealing of solid imaging element 2, described adhesive does not need sealing characteristics.
Shown in Fig. 5 D, in the 4th technology, transparent substrates 20 cuts into piece accordingly with dividing plate 5, and forming a plurality of cover glass, yet IRCF substrate 27 is not cut.Say that exactly transparent substrates 20 cuts into piece from the periphery of the dividing plate edge dividing plate 5 of seal substrate 28.In this stage, on IRCF substrate 27, also form the otch (for example 50 μ m) of the more shallow degree of depth, make the transparent substrates 20 that cuts into piece successfully from seal substrate 28, to separate.
Shown in Fig. 4 and Fig. 5 E, in the 5th technology, seal substrate 28 is bonded on the wafer 31, on described wafer 31, be formed with a plurality of light receiving parts 3 and pad 10.For this purpose, use for example has the viscosity of 350000cps, 196 ℃ Tg and the hot setting adhesive 32 of 150 ℃ of following conditions of cure of 40 minutes.For coating hot setting adhesive 32 on dividing plate 5, use dubbing method.At first, in addition elasticity PRT film etc. go up the thin hot setting adhesive 32 of coating.Next, the dividing plate 5 of seal substrate 28 is superimposed upon on the described film, peels off described film then, make hot setting adhesive 32 is transcribed on dividing plate 5.
Then, carry out the aligning between seal substrate 28 and the wafer 31, the dividing plate 5 of seal substrate 28 is superimposed upon on the wafer 31, and heats described hot setting adhesive to be cured.By heating, each parts expands according to its thermal coefficient of expansion.Yet described solid imaging element 2 can warpage, because wafer 31 and have approximately equalised thermal coefficient of expansion as the IRCF substrate 27 of mounting panel.In addition, because transparent substrates 20 has been cut into cover glass 6, the expansion of each cover glass 6 can not cause the warpage of IRCF substrate 27 and wafer 31.
Therefore, the combination of described parts can be in solid imaging element 2 to have the high sealing characteristic and can not cause that the mode of any problem carries out.In addition, in curing process, also quicken the curing of the UV cure adhesive 24 between cover glass 6 and the dividing plate 5, strengthened sealing characteristics.In addition, because hot setting adhesive 32 has high glass transition point (Tg), so have higher sealed nature and moisture-resistant characteristic under the high temperature.Because hot setting adhesive 32 has low reaction activity, when being used in the wiring pattern of wafer 31, electric current leaks or other problem can not take place.Because hot setting adhesive 32 has high curing rate, has improved the productivity ratio of solid state image pickup device 2.
As described in Fig. 5 F, in the 6th technology, a plurality of infrared cut filter 7 form by cutting IRCF substrate 27.Finally, shown in Fig. 5 G, in the 7th technology, wafer 31 is cut into piece to finish the formation of a plurality of solid imaging elements 2.In this embodiment, owing to cut transparent substrates 20 in advance, in the cutting of IRCF substrate 27, there are enough spaces between wafer 31 and the cutting edge.Therefore, can reduce the infringement that causes by glass-cutting (glass shavings) to solid imaging element 2.
In the above-described embodiments, at first dividing plate 5 is formed on the transparent substrates 20, and the IRCF substrate 27 as support substrates is adhered on the transparent substrates 20 then.Yet, also can at first IRCF substrate 27 be adhered on the transparent substrates 20, and then form dividing plate 5.In the above-described embodiments, IRCF substrate 27 is as support substrates.Yet, can use other filter at solid imaging element, for example optical low-pass filter and antireflection filter also can be used as support substrates.In addition, can not destroy the transparent glass substrate that light enters into light receiving part 3 and can be used as support substrates yet.In the above-described embodiments, support substrates has the thermal coefficient of expansion less than cover glass.Yet, when the thermal coefficient of expansion of cover glass hour, can use the support substrates that has with cover glass approximately equal thermal coefficient of expansion.
In the above-described embodiments, solid imaging element has the support substrates of staying on the cover glass.Yet after dividing plate and cover glass were attached to wafer, support substrates can be removed from cover glass.For example, the simple glass plate with low thermal coefficient of expansion is as support substrates, and glass plate is bonded on the transparent substrates by using releasable adhesive.Afterwards, transparent substrates is split into multi-disc, and the transparent substrates that has dividing plate on it is adhered on the wafer.Then, glass plate is peeled off from transparent substrates.For example, as releasable adhesive, existing then can be by hot water expansion and the adhesive of peeling off by the UV photocuring.
Industrial applicability
Preferably, the optics that applies the present invention to such as digital camera and mobile phone is established In the standby solid imaging element.
Claims (13)
1, a kind of solid imaging element comprises:
Image sensor chip, it is provided with the light receiving part that is used to carry out opto-electronic conversion;
Dividing plate appends on the described image sensor chip, is used to be enclosed in the periphery of described light receiving part;
Transparent cover glass appends to described dividing plate, is used to seal the space that described dividing plate surrounds; And
Append at least one optical sheet of described cover glass, described optical sheet is made of the material that has with the approximately uniform thermal coefficient of expansion of described image sensor chip.
2, solid imaging element according to claim 1, the described thermal coefficient of expansion of wherein said optical sheet are 2ppm/ ℃ to 5ppm/ ℃.
3, solid imaging element according to claim 1, wherein said cover glass are that thermal coefficient of expansion is approximately equal to or greater than the low alpha ray glass of the thermal coefficient of expansion of described optical sheet.
4, solid imaging element according to claim 1, wherein said optical sheet are infrared cut filter.
5, solid imaging element according to claim 1, wherein said optical sheet are optical low-pass filter.
6, solid imaging element according to claim 1, wherein said optical sheet are the antireflection filter.
7, solid imaging element according to claim 1, wherein said parts combine by the adhesive with glass transition point of at least 120 ℃.
8, solid imaging element according to claim 1 is being by having the UV cure adhesive combination of at least 120 ℃ glass transition point between described dividing plate and the described cover glass and between described cover glass and the described optical sheet wherein.
9, solid imaging element according to claim 1 wherein is by having the hot setting adhesive combination of at least 120 ℃ glass transition point between described imageing sensor and described dividing plate.
10, a kind of manufacture method of solid imaging element, comprise the technology that seals a plurality of light receiving parts that are provided with on the wafer respectively and cut crystal is to make the technology of a plurality of image sensor chips accordingly with described light receiving part, the described technology that seals described a plurality of light receiving parts respectively may further comprise the steps:
Form a plurality of dividing plates so that each described dividing plate and the corresponding technology of each described light receiving part on a surface of transparent substrates, wherein said transparent substrates is the material of cover glass;
Before or after forming described dividing plate technology, with another surperficial process combined of at least one support substrates and described transparent substrates, described support substrates is the material of optical sheet, and has and the approximately uniform thermal coefficient of expansion of described wafer;
The technology of feasible reservation of the described transparent substrates of excision and the corresponding part of each described light receiving part on described support substrates is so that form a plurality of described cover glass;
By using hot setting adhesive with described dividing plate and described wafer process combined;
Cut described support substrates accordingly with each described light receiving part, so that form the technology of a plurality of described optical sheets.
11, the manufacture method of solid imaging element according to claim 10 wherein saidly may further comprise the steps each described dividing plate and described wafer process combined:
Utilize described hot setting adhesive to apply the technology of each described dividing plate;
The technology of each described dividing plate of stack on described wafer; And
Heating is to solidify the technology of described hot setting adhesive.
12, the manufacture method of solid imaging element according to claim 10, wherein said hot setting adhesive has at least 120 ℃ glass transition point.
13, the manufacture method of solid imaging element according to claim 10 is by having the UV cure adhesive combination of at least 120 ℃ glass transition point between wherein said dividing plate and the described transparent substrates and between described transparent substrates and the described support substrates.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP360949/2005 | 2005-12-14 | ||
| JP2005360949 | 2005-12-14 | ||
| JP362325/2005 | 2005-12-15 |
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| CN101326641A true CN101326641A (en) | 2008-12-17 |
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| CNA2006800464993A Pending CN101326641A (en) | 2005-12-14 | 2006-12-11 | Solid state imaging device and manufacturing method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237378A (en) * | 2010-04-29 | 2011-11-09 | 宏宝科技股份有限公司 | Image sensing device |
| CN102598288A (en) * | 2009-09-24 | 2012-07-18 | Msg里松格莱斯股份公司 | Method for producing a housing with a component in a hollow space, corresponding housing, method for producing a semi-finished product, and semi-finished product |
| CN104517985A (en) * | 2013-09-26 | 2015-04-15 | 上海澳华光电内窥镜有限公司 | Cutting encapsulation method of imaging device used for endoscope and imaging device used for endoscope |
| CN101807528B (en) * | 2008-12-24 | 2015-09-30 | 南昌欧菲光电技术有限公司 | Techniques for glass attachment in image sensor package |
| CN105717783A (en) * | 2014-12-23 | 2016-06-29 | 斯沃奇集团研究和开发有限公司 | Method for manufacturing a display dial for portable object such as a timepiece and display dial |
| CN107623010A (en) * | 2016-07-14 | 2018-01-23 | 半导体组件工业公司 | Wafer-level package and correlation technique |
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2006
- 2006-12-11 CN CNA2006800464993A patent/CN101326641A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807528B (en) * | 2008-12-24 | 2015-09-30 | 南昌欧菲光电技术有限公司 | Techniques for glass attachment in image sensor package |
| CN102598288A (en) * | 2009-09-24 | 2012-07-18 | Msg里松格莱斯股份公司 | Method for producing a housing with a component in a hollow space, corresponding housing, method for producing a semi-finished product, and semi-finished product |
| CN102237378A (en) * | 2010-04-29 | 2011-11-09 | 宏宝科技股份有限公司 | Image sensing device |
| CN102237378B (en) * | 2010-04-29 | 2016-04-27 | 异基因开发有限责任公司 | Image sensor apparatus |
| CN104517985A (en) * | 2013-09-26 | 2015-04-15 | 上海澳华光电内窥镜有限公司 | Cutting encapsulation method of imaging device used for endoscope and imaging device used for endoscope |
| CN105717783A (en) * | 2014-12-23 | 2016-06-29 | 斯沃奇集团研究和开发有限公司 | Method for manufacturing a display dial for portable object such as a timepiece and display dial |
| CN105717783B (en) * | 2014-12-23 | 2018-04-06 | 斯沃奇集团研究和开发有限公司 | For the method for manufacturing the display scale disk for portable object such as clock and watch and thus obtained display scale disk |
| CN107623010A (en) * | 2016-07-14 | 2018-01-23 | 半导体组件工业公司 | Wafer-level package and correlation technique |
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Open date: 20081217 |