JP4871690B2 - Solid-state imaging device manufacturing method and solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device manufacturing method and a solid-state imaging device manufactured by joining a solid-state imaging device wafer and a light-transmitting protective member via a wafer and dividing the wafer into individual chips.

  2. Description of the Related Art In recent years, solid-state imaging devices such as CCDs (Charge Coupled Devices) and CMOSs (Complementary Metal Oxide Semiconductors) used for digital cameras and mobile phones have been required to be increasingly miniaturized.

  In order to reduce the size of the solid-state imaging device from such a requirement, the solid-state imaging device wafer on which the light-receiving portions of a large number of solid-state imaging devices are formed and the light transmissive protective member correspond to the positions surrounding each light-receiving portion. A solid-state imaging device manufactured by separating the bonded substrate into individual solid-state imaging devices after bonding through spacers formed in the same manner and a manufacturing method thereof have been proposed (for example, Patent Document 1). .

  The example of the solid-state imaging device described in the cited document 1 is described below. 5 and 6 are a perspective view and a cross-sectional view showing an external shape of the solid-state imaging device.

  In the solid-state imaging device 21, the cover glass 12 is bonded to the rectangular solid-state imaging element chip 11 </ b> C via the spacer 13. On the solid-state image sensor chip 11C, pads 11B, 11B... That are electrically connected to the solid-state image sensor 11A and the solid-state image sensor 11A are provided, and a frame is formed so as to surround the solid-state image sensor 11A. Shaped spacers 13 are provided. The cover glass 12 is attached on the spacer 13 and seals the solid-state imaging device 11A.

  The solid-state image pickup device chip 11C is obtained by dividing a solid-state image pickup device wafer on which light-receiving portions of a large number of solid-state image pickup devices are formed into the sizes of the respective chips. It is divided into the size. Further, the spacer 13 is joined to the cover glass 12 via the adhesive 13A and the solid-state imaging device chip 11C via the adhesive 13B.

  A general semiconductor element manufacturing process is applied to manufacture of the solid-state imaging element 11A. The solid-state imaging device 11A includes a photodiode that is a light-receiving device formed on a wafer (solid-state imaging device chip 11C), a transfer electrode that transfers excitation voltage to the outside, a light shielding film having an opening, and an interlayer insulating film. . Further, in the solid-state imaging device 11A, an inner lens is formed on the interlayer insulating film, a color filter is provided on the upper portion of the inner lens via an intermediate layer, and a microlens or the like is provided on the upper portion of the color filter via the intermediate layer. Is provided.

  Since the solid-state imaging device 11A is configured in this way, light incident from the outside is condensed by the microlens and the inner lens and irradiated to the photodiode, so that the effective aperture ratio is increased.

  The pads 11B, 11B,... Are patterned on the solid-state image sensor chip 11C using, for example, a conductive material. Similarly, wiring is provided between the pad 11B and the solid-state imaging device 11A by pattern formation.

  Further, a through wiring 24 penetrating the solid-state imaging element chip 11C is provided, and conduction between the pad 11B and the external connection terminal 26 is established.

  As a wafer to be divided into a large number of solid-state imaging element chips 11C, it is common to use a single crystal silicon wafer having a thickness of about 300 μm, for example.

  The spacer 13 is made of an inorganic material such as silicon. That is, the material of the spacer 13 is preferably a material similar in physical properties such as a thermal expansion coefficient to the wafer (solid-state imaging device chip 11C) and the cover glass 12. When a part of the frame-shaped spacer 13 is viewed in cross section, the width of the cross section is about 200 μm, for example, and the thickness is about 100 μm, for example.

For the cover glass 12, transparent α-ray shielding glass or “Pyrex (registered trademark) glass” or the like is used in order to prevent destruction of the photodiode of the CCD, and the thickness thereof is, for example, about 500 μm.
JP 2001-351997 A

  In the solid-state imaging device as described above, a gap is provided between the cover glass and the solid-state imaging device by the spacer, thereby improving sensitivity. However, in a solid-state imaging device having such a structure, moisture enters the gap from the interface such as a cover glass, spacer, or adhesive, and the air gap changes due to temperature change in the gap due to heating of the solid-state imaging element during driving. Condensation occurs inside, causing a problem of poor sensitivity.

  The present invention has been made in view of such problems, and a solid-state imaging device manufacturing method and a solid-state imaging device for improving a sealing property of a gap at a wafer level and manufacturing a solid-state imaging device having high moisture resistance. The purpose is to provide.

  In order to achieve the above-mentioned object, the invention according to claim 1 includes a joining step of joining a solid-state imaging device wafer and a light-transmitting protective member through a spacer, and the light-transmitting protection that is bonded. A cutting step of cutting the member into the size of a chip formed on the solid-state imaging device wafer, a sealing step of sealing the cut portion of the cut light-transmitting protective member with a resin, and the solid-state imaging device wafer A through-wiring forming process for forming a through-wiring, and a separation process for separating the resin and the solid-state imaging device wafer into individual chips by cutting the resin and the solid-state imaging device wafer are performed.

  According to the first aspect of the present invention, the light transmissive protective member is bonded to the solid-state imaging device wafer via the spacer. After bonding, the light-transmitting protective member is cut in accordance with the chip size of the solid-state image sensor formed on the surface of the solid-state image sensor wafer. After cutting, resin is sealed in a cut portion sandwiched between the spacer and the cut light-transmitting protective member, and the cut portion is sealed. After sealing the cut portion, a through wiring is formed for each chip of the solid-state imaging device wafer. Finally, each solid-state imaging device is obtained by cutting and separating the solid-state imaging element wafer on which the through wiring is formed and the sealing resin.

  Thus, before the bonded wafer is subjected to the through wiring formation process, the periphery of the solid-state imaging device is sealed with resin, the sealing performance of the gap is improved, and the solid-state imaging device wafer from the chemical solution in the through wiring formation process It is possible to protect the adhesive surface between the light-transmitting protective member and the spacer, the adhesive surface between the spacer and the wafer, and the adhesive.

  According to a second aspect of the present invention, there is provided a cutting step in which a light-transmitting protective member is bonded to a support member, and the light-transmitting protective member is cut to the size of a chip formed on the solid-state image sensor wafer; And joining the light-transmissive protective member cut to the size of the chip through a spacer, a peeling step of peeling the support member, and a cut portion of the cut light-transmissive protective member as a resin A sealing step for sealing by, a through-wiring forming step for forming a through-wiring in the solid-state imaging device wafer, and a separation step for separating the resin and the solid-state imaging device wafer into individual chips by cutting the resin and the solid-state imaging device wafer It is also characterized by

  According to the invention of claim 2, the support member is bonded to the light transmissive protective member, and the light transmissive protective member is cut into the size of a chip formed on the solid-state imaging device wafer. The cut light-transmitting protective member is bonded to the solid-state imaging device wafer via a spacer, and then the support member is peeled off. After peeling, a resin is sealed in the cut portion, and the cut portion is sealed. After sealing the cut portion, a through wiring is formed for each chip of the solid-state imaging device wafer. Finally, each solid-state imaging device is obtained by cutting and separating the solid-state imaging element wafer on which the through wiring is formed and the sealing resin.

  Thereby, before the process of processing the bonded wafer at high temperature, the periphery of the solid-state imaging device is sealed with the resin, and the sealing performance of the gap is improved. Moreover, there is no need to cut the light-transmitting protective member after joining, and the process of using water or the like before resin sealing can be reduced.

  The invention according to claim 3 is formed on the solid-state imaging device wafer, the joining step of joining the solid-state imaging device wafer and the light-transmitting protective member via a spacer, and the joined solid-state imaging device wafer. A cutting step for cutting into a chip size, a sealing step for sealing a cut portion of the cut solid-state imaging device wafer with a resin, a through-wiring forming step for forming a through-wiring in the solid-state imaging device wafer, It is also characterized in that a separation step of separating each chip by cutting the resin and the light transmitting protective member is performed.

  According to the invention of claim 3, the light-transmitting protective member is bonded to the solid-state imaging device wafer via the spacer. After the bonding, the solid-state imaging device wafer is cut from the surface opposite to the surface to which the light-transmissive protective member is bonded in accordance with the chip size of the solid-state imaging device formed on the surface of the solid-state imaging device wafer. After the cutting, resin is sealed in a cutting portion sandwiched between the spacer and the cut solid-state imaging device wafer, and the cutting portion is sealed. After sealing the cut portion, a through wiring is formed for each chip of the solid-state imaging device wafer. Finally, the light-transmitting protective member and the sealing resin are cut and separated to form individual solid-state imaging devices.

  Thereby, before the process of processing the bonded wafer at high temperature, the periphery of the solid-state imaging device is sealed with the resin, and the sealing performance of the gap is improved.

  According to a fourth aspect of the present invention, in any one of the first, second, or third aspect, a grooving step of forming a groove in the resin is performed after the sealing step and before the through wiring formation step. It is characterized by that.

  According to the invention of claim 4, by inserting grooves in the filled resin, it is possible to reduce the warpage of the wafer caused by the curing shrinkage of the resin, and to reduce the warpage of the wafer due to the thermal expansion of the filled resin in the process at a high temperature. can do.

  According to a fifth aspect of the present invention, in any one of the first, second, and third aspects, the sealing step is performed by any one of transfer molding, potting, and printing.

  According to the invention of claim 5, the resin is reliably supplied to the groove, and the periphery of the solid-state imaging device is reliably sealed.

  As described above, according to the method for manufacturing a solid-state imaging device and the solid-state imaging device of the present invention, by cutting one of the joined articles made of members having different thermal expansion coefficients before the process of performing the high-temperature processing, Wafer warpage caused by a difference in thermal expansion coefficient can be reduced. Further, by sealing the periphery of the solid-state imaging element with a resin, it is possible to improve the sealing property of the gap and to manufacture a high-quality solid-state imaging device with high moisture resistance.

  A preferred embodiment of a method for manufacturing a solid-state imaging device and a solid-state imaging device according to the present invention will be described in detail below with reference to the accompanying drawings.

  FIG. 1 is a schematic diagram showing a method of manufacturing a solid-state imaging device according to the present invention and the procedure of the first embodiment of the solid-state imaging device.

  In the first embodiment of the manufacturing method of the solid-state imaging device according to the present invention, as shown in FIG. 1A, first, as a joining process, the surface is electrically connected to the solid-state imaging device 3 and the solid-state imaging device 3. The light-transmitting protective member 2 is bonded to the solid-state imaging device wafer 1 provided with pads 4, 4, 4,...

  The spacer 5 is provided in a frame shape so as to surround the solid-state imaging device 3, is formed of an inorganic material, for example, silicon, and has similar physical properties such as a thermal expansion coefficient to the solid-state imaging device wafer 1 and the light transmissive protection member 2. Material is desirable. When a part of the spacer 5 is viewed in cross section, the cross section has a width of, for example, about 200 μm and a thickness of, for example, about 100 μm.

  For the light-transmissive protective member 2, transparent low α-ray glass or “Pyrex (registered trademark) glass” or the like is used to prevent the destruction of the photodiode of the CCD, and the thickness thereof is, for example, 300 to 500 μm. Degree.

  As the adhesive, an epoxy adhesive or resist that is UV curable or room temperature curable is used. In addition, since it is made to contact with the connection terminal (Al pad etc.) of a solid-state image sensor, a thing with few ionic impurities (halogen system) is preferable.

  Subsequently, as shown in FIG. 1B, as a cutting process, the tape 22 is adhered to the surface opposite to the surface where the light-transmitting protective member 2 of the solid-state imaging device wafer 1 is bonded, and the blade is moved at high speed. The light-transmitting protective member 2 is diced in accordance with the chip size formed on the solid-state imaging device wafer 1 and divided into individual cover glasses 2A by a dicing machine that cuts and cuts an object by rotating the object glass.

  As shown in FIG. 1C, resin 8 is supplied to the cut portion 7 of the light-transmissive protective member 2 divided into the individual cover glasses 2A by dicing, and the periphery of the solid-state imaging device is supplied as a sealing process. Is sealed.

  At this time, the resin 8 is supplied by any one of transfer molding, potting, and printing. Further, the printing is preferably performed under vacuum, which is referred to as vacuum printing in the present application.

  As shown in FIG. 4A, the transfer mold is a state in which the bonded solid-state imaging device wafer 1 and the light-transmissive protective member 2 are bonded to the surface of the cover glass 2A. Then, it is stored in the mold 43. The resin 8 is sealed in the mold 43 by the cylinder 42. Thereby, the resin 8 is supplied into the cutting part 7.

  In the potting, as shown in FIG. 4B, the bonded solid-state imaging device wafer 1 and the light-transmitting protection member 2 are accommodated in a resin outflow prevention jig 45. In this state, the resin 8 is injected into the cutting part 7 from the syringe 44.

  As for printing, as shown in FIG. 4 (c), the bonded solid-state imaging device wafer 1 and the light-transmitting protective member 2 are resin in a state where the protective sheet 47 is adhered to the cover glass 2A. Store in the outflow prevention jig 45. In this state, the resin 8 is stretched from the end portion of the resin outflow prevention jig 45 using the squeegee 46, and the resin 8 is sealed in each cutting portion 7.

  Further, it is preferable to perform the printing under vacuum. In this case, as shown in FIG. 4C, the bonded solid-state imaging device wafer 1 and the light-transmissive protective member 2 are covered with a cover. The protective sheet 47 is adhered to the glass 2A and stored in the resin outflow prevention jig 45. In this state, evacuation is performed, and the resin 8 is stretched from the end of the resin outflow prevention jig 45 by using the squeegee 46 and then returned to the atmospheric pressure, and the resin 8 is sealed in each cutting portion 7.

  For the resin 8, a thermosetting, UV curable, or photocurable resin material is used. For example, an epoxy resin (for one-component semiconductor sealing), silicon, an epoxy adhesive, or the like can be used. . In addition, it is desirable that the resin to be filled has low curing shrinkage, low stress, and low elastic modulus.

  After the sealing step, as shown in FIG. 1D, a groove 9 is formed in the sealed resin 8 by a blade 35 of a dicing apparatus or the like as a grooving step. As a result, the warpage of the wafer caused by curing shrinkage during curing of the filled resin can be reduced, and the wafer warpage due to the thermal expansion of the filled resin can be reduced when processing at a high temperature is performed in a later process. . Moreover, the warp due to the difference in coefficient of thermal expansion of the solid-state imaging device wafer 1 is reduced by cutting the bonded light-transmitting protective member 2 into a chip size.

  Note that the grooving step may be omitted when the amount of warpage generated by curing shrinkage of the filling resin is small, when the stress due to thermal expansion is small, and warpage is difficult to occur.

  After the grooving step, the tape 22 is peeled off, and as shown in FIG. 1E, as the through wire forming step, the through wire 31 and the external joint terminal 32 leading to each pad 4 are connected to the solid-state imaging device wafer 1. It is formed. In the formation of the through wiring 31 and the external connection terminal 32, a CVD process for heating the bonded light-transmissive protective member 2 and the solid-state imaging device wafer 1 to 150 ° C., a resist baking process for heating to 110 ° C., and 260 Each process with heating, such as a bump reflow process for heating to 0 ° C., is performed.

  After the through wiring forming step, as shown in FIG. 1 (f), as a separation step, the tape 22 is attached again and the resin 8 and the solid-state image pickup device wafer 1 sealed by the blade 35 are separated into individual solid-state image pickup devices. Separate into chips 1A.

  As a result, as shown in FIG. 1 (g), the solid-state imaging device 10 is sealed with the resin 8, and the sealing performance of the gap between the cover glass 2A and the solid-state imaging device 3 is improved. High quality solid-state imaging device.

  Next, a second embodiment of the solid-state imaging device manufacturing method and the solid-state imaging device according to the present invention will be described in detail.

  FIG. 2 is a schematic diagram showing a method of manufacturing a solid-state imaging device according to the present invention and the procedure of the second embodiment of the solid-state imaging device.

  In the second embodiment of the method for manufacturing a solid-state imaging device according to the present invention, as shown in FIG. 2A, first, as a cutting step, the support member 36 and the light-transmissive protective member 2 are bonded together to transmit light. The protective member 2 is diced in accordance with the chip size formed on the solid-state imaging device wafer 1.

  As the support member, a member that matches or is close to the wafer to be bonded, such as light transmittance, high heat resistance, etc., and thermal expansion coefficient is used.

  After the cutting process, the light-transmissive protective member 2 divided into individual cover glasses 2A is bonded to the solid-state imaging device wafer 1 with an adhesive via a spacer 5 as a bonding process, as shown in FIG. Be joined.

  After the joining step, the support member 36 is peeled off from the light-transmitting protective member 2 divided into individual cover glasses 2A as a peeling step.

  After the peeling process, as shown in FIG. 2C, the cutting portion 7 is supplied with resin 8 to seal the periphery of the solid-state imaging device as a sealing process.

  At this time, the resin 8 is supplied by any one of transfer molding, potting, printing, or vacuum printing.

  After the sealing step, as shown in FIG. 2D, a groove 9 is formed in the sealed resin 8 by a blade 35 or the like as a grooving step. Thereby, the warpage of the wafer caused by curing shrinkage during curing of the filled resin is reduced, and when the treatment at a high temperature is performed in the subsequent process, the warpage of the wafer due to the expansion of the filled resin is reduced. Further, the warp due to the difference in coefficient of thermal expansion of the solid-state imaging device wafer 1 is reduced by cutting the bonded light-transmitting protective member 2 into a chip size.

  Note that the grooving step may be omitted when the amount of warpage generated by curing shrinkage of the filling resin is small, when the stress due to thermal expansion is small, and warpage is difficult to occur.

  After the grooving step, the tape 22 is peeled off, and as shown in FIG. 2E, as the through wire forming step, the through wire 31 and the external joint terminal 32 leading to each pad 4 are connected to the solid-state imaging device wafer 1. It is formed. In the formation of the through wiring 31 and the external connection terminal 32, each process accompanied by heating such as a CVD process, a resist baking process, and a bump reflow process is performed on the bonded light-transmitting protective member 2 and the solid-state imaging device wafer 1. Applied.

  After the through wiring forming process, as shown in FIG. 2 (f), as the separation process, the tape 22 is again adhered and the resin 8 and the solid-state image sensor wafer 1 sealed by the blade 35 are separated into individual solid-state image sensors. Separate into chips 1A.

  As a result, as shown in FIG. 2G, the solid-state imaging device 50 is sealed with the resin 8, and the sealing performance of the gap between the cover glass 2A and the solid-state imaging device 3 is improved, and the moisture resistance is improved. It becomes a high quality and high quality solid-state imaging device.

  Next, a third embodiment of the solid-state imaging device manufacturing method and the solid-state imaging device according to the present invention will be described in detail.

  FIG. 3 is a schematic diagram showing a method of manufacturing the solid-state imaging device according to the present invention and the procedure of the third embodiment of the solid-state imaging device.

  In the third embodiment of the manufacturing method of the solid-state imaging device according to the present invention, as shown in FIG. 3A, first, as a bonding step, the light-transmitting protective member 2 is a spacer with respect to the solid-state imaging device wafer 1. 5 is bonded by an adhesive.

  Subsequently, as shown in FIG. 3B, as a cutting process, a tape 22 is attached to the surface opposite to the surface where the solid-state imaging device wafer 1 of the light-transmitting protective member 2 is bonded, and the dicing machine is used. The solid-state image sensor wafer 1 is diced in accordance with the chip size formed on the solid-state image sensor wafer 1 and divided into individual solid-state image sensor chips 1A.

  As shown in FIG. 3C, a resin 8 is supplied to the cutting portion 7A of the solid-state image sensor wafer 1 divided into individual solid-state image sensor chips 1A by dicing, as a sealing process. Seal around.

  At this time, the resin 8 is supplied by any one of transfer molding, potting, printing, or vacuum printing.

  After the sealing process, the tape 22 is peeled off, and as shown in FIG. 3D, as the through wiring forming process, for each solid-state imaging device chip 1A, the through wiring 31 leading to each pad 4 and external bonding A terminal 32 is formed. In the formation of the through wiring 31 and the external connection terminal 32, each process with heating such as a CVD process, a resist baking process, a bump reflow process, and the like is performed.

  After the through wiring forming process, as shown in FIG. 3 (e), as the separating process, the tape 22 is again adhered and the resin 8 and the light-transmitting protective member 2 sealed by the blade 35 are separated into individual cover glasses. Separate into 2A.

  As a result, as shown in FIG. 3 (f), the solid-state imaging device 60 is sealed with the resin 8, and the sealing performance of the gap between the cover glass 2A and the solid-state imaging device 3 is improved. High quality solid-state imaging device.

  In the third embodiment, a groove is formed in the resin 8 supplied to the cutting portion 7A between the sealing step shown in FIG. 3C and the through wiring forming step shown in FIG. Even if it performs the grooving process which forms this, it can implement suitably.

  As described above, according to the method for manufacturing a solid-state imaging device and the solid-state imaging device according to the present invention, the through wiring that needs to process the bonded solid-state imaging device wafer and the light-transmitting protective member at a high temperature. Before performing the forming process, the wafer is cut and separated into pieces and sealed with resin, so that the sealing property of the gap between the cover glass and the solid-state imaging device is improved. This makes it possible to manufacture a high-quality solid-state imaging device with high moisture resistance.

  Furthermore, by inserting grooves in the resin sealed before the process at high temperature, the warpage of the wafer due to the expansion of the filled resin is reduced, and the bonding due to the difference in coefficient of thermal expansion between the light-transmitting protective member and the solid-state imaging device wafer. It is possible to reduce the warpage of the wafer and protect the solid-state imaging device wafer from the chemical solution in the through wiring formation process.

The schematic diagram which showed the procedure of the 1st Embodiment of this invention. The schematic diagram which showed the procedure of the 2nd Embodiment of this invention. The schematic diagram which showed the procedure of the 3rd Embodiment of this invention. The schematic diagram which showed the method of the sealing process. The perspective view of the solid-state imaging device by the conventional manufacturing method. Sectional drawing of the solid-state imaging device by the conventional manufacturing method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Solid-state image sensor wafer, 1A, 11C ... Solid-state image sensor chip, 2 ... Light-transmissive protective member, 2A, 12 ... Cover glass, 3, 11A ... Solid-state image sensor, 4, 11B ... Pad, 5, 13 ... Spacer , 7 ... cutting part, 8 ... resin, 9 ... groove, 10, 21, 50, 60 ... solid-state imaging device, 13A, 13B ... adhesive, 24, 31 ... penetrating wiring, 26, 32 ... external connection terminals

Claims (10)

A bonding step of bonding the solid-state imaging device wafer and the light transmissive protective member via a spacer;
A cutting step of cutting the bonded light-transmitting protective member into the size of a chip formed on the solid-state imaging device wafer;
A sealing step of sealing the cut portion of the cut light-transmitting protective member with a resin;
A through wiring forming step of forming a through wiring on the solid-state imaging device wafer;
A method of manufacturing a solid-state imaging device, comprising: separating the resin and the solid-state imaging device wafer into individual chips by cutting. A step of bonding the light transmissive protective member to the support member, and cutting the light transmissive protective member into a size of a chip formed on the solid-state imaging device wafer;
A bonding step of bonding a solid-state imaging device wafer and the light-transmissive protective member cut into a chip size via a spacer;
A peeling step for peeling the support member;
A sealing step of sealing the cut portion of the cut light-transmitting protective member with a resin;
A through wiring forming step of forming a through wiring on the solid-state imaging device wafer;
A method of manufacturing a solid-state imaging device, comprising: separating the resin and the solid-state imaging device wafer into individual chips by cutting. A bonding step of bonding the solid-state imaging device wafer and the light transmissive protective member via a spacer;
A cutting step of cutting the bonded solid-state image sensor wafer into the size of a chip formed on the solid-state image sensor wafer;
A sealing step of sealing the cut portion of the cut solid-state imaging device wafer with resin;
A through wiring forming step of forming a through wiring on the solid-state imaging device wafer;
A method for manufacturing a solid-state imaging device, comprising: performing a separation step of separating the resin and the light-transmissive protective member into individual chips by cutting.   4. The solid-state imaging device according to claim 1, wherein a grooving step of forming a groove in the resin is performed after the sealing step and before the through wiring forming step. 5. Manufacturing method.   4. The method of manufacturing a solid-state imaging device according to claim 1, wherein the sealing step is performed by any of transfer molding, potting, printing, or vacuum printing. 5. In a solid-state imaging device manufactured by joining a solid-state imaging element wafer and a light-transmitting protective member via a spacer and dividing into individual chips,
After joining the solid-state imaging device wafer and the light-transmitting protective member, the light-transmitting protective member is cut into the size of a chip formed on the solid-state imaging device wafer, and the cut light-transmitting protective member After the cutting portion is sealed with resin, a through wiring is formed on the solid-state imaging device wafer, and after the through wiring is formed, the solid-state imaging device wafer and the resin are cut to be divided into individual chips. A solid-state imaging device manufactured. In a solid-state imaging device manufactured by joining a solid-state imaging element wafer and a light-transmitting protective member via a spacer and dividing into individual chips,
The light-transmissive protective member and the support member are joined, and the light-transmissive protective member is cut into a chip size formed on the solid-state image sensor wafer, and then joined to the solid-state image sensor wafer via a spacer. After the support member is peeled off and the cut portion of the cut light-transmitting protective member is sealed with resin, a through wiring is formed on the solid-state imaging device wafer, and the solid-state imaging device wafer is formed after the through wiring is formed. A solid-state image pickup device manufactured by being divided into individual chips by cutting the resin and the resin. In a solid-state imaging device manufactured by joining a solid-state imaging element wafer and a light-transmitting protective member via a spacer and dividing into individual chips,
After joining the solid-state imaging device wafer and the light-transmitting protective member, cutting the solid-state imaging device wafer into a chip size, and sealing the cut portion of the cut solid-state imaging device wafer with resin A solid-state imaging device, wherein a through-wiring is formed on the solid-state imaging device wafer, and the light-transmitting protective member and the resin are cut and then divided into individual chips after the through-wiring is formed. apparatus.   7. The cut portion is sealed with a resin, a groove is formed in the resin, and the through wiring is formed in the solid-state imaging device wafer after the groove is formed. , 7, or 8. The solid-state imaging device according to claim 1.   9. The solid-state imaging device according to claim 6, wherein sealing of the cut portion with the resin is performed by any one of transfer molding, potting, and printing.

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