JP2011198853A - Photoelectric conversion film-stacked solid-state imaging device without microlens, method of manufacturing the same, and imaging apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small and thin solid-state imaging device which does not require a gap beneath a transparent substrate bonded to a front surface of the imaging device, and selects transparent resin which does not depend on refractive index as adhesive.SOLUTION: The photoelectric conversion film-stacked solid-state imaging device is equipped with: a semiconductor substrate 121; a photoelectric conversion film 130 stacked on a light incidence side upper layer of the semiconductor substrate 121; a signal reading means (not shown in the figure) formed in a surface portion of the semiconductor substrate 121, for reading out to an external, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film 130 according to incident light quantities; the transparent substrate (not shown in the figure) bonded to a light incidence side upper layer of the photoelectric conversion film 130 with the transparent resin as the adhesive; and electric connection terminals 113 which are interconnected to the signal reading means and which penetrate through the semiconductor substrate 121 and are exposed from the opposite surface of the surface where the photoelectric conversion film 130 of the semiconductor substrate 121 is formed.

Description

  The present invention relates to a solid-state imaging device or the like mounted on an imaging device such as a digital camera, and more particularly to a photoelectric conversion film stacked solid-state imaging device having a structure suitable for mounting on an imaging device and a manufacturing method thereof.

  The solid-state imaging device has a soft surface because a light-receiving surface is provided with a resin-made microlens (top lens) or a color filter layer. For this reason, it is necessary to protect the light receiving surface of the solid-state imaging device so that the surface is not damaged, and dust is not attached. Therefore, conventionally, as shown in Patent Documents 1 and 2, a transparent substrate such as a glass substrate is attached to the surface of the light receiving surface with an adhesive.

  However, the material of the adhesive is a problem. In a conventional solid-state imaging device such as a CCD image sensor or a CMOS image sensor, a microlens is provided above each light receiving device in order to increase the use efficiency of incident light, and the refractive index is microscopic on the surface of the microlens. If an adhesive of the same degree as the lens material is applied, the refraction of light on the surface of the microlens does not occur, the function of the microlens is hindered, and incident light cannot be condensed.

  For this reason, it is necessary to select a material having a refractive index lower than that of the microlens as the transparent resin for the adhesive. In addition, since the reliability of the adhesive is low unless the material has a low water absorption rate, it is necessary to select a material having a low refractive index and a low water absorption rate, resulting in fewer choices of materials and increased costs. There's a problem.

  A technology that increases the light condensing efficiency of the microlens by using the refractive index of air and providing a gap between the microlens and the transparent substrate without bonding the entire surface of the microlens and the transparent substrate with an adhesive. It is described in Document 3. However, the process of providing the gap is complicated, which increases the manufacturing cost. Another problem is that the thickness of the solid-state imaging device cannot be reduced due to the provision of the air gap.

Japanese Patent Laid-Open No. 2003-31782 JP 2008-92417 A Japanese Patent No. 4271909

  An object of the present invention is to use a photoelectric conversion film laminated solid-state imaging device not mounted with a microlens, so that the above-described gap is not required and a transparent resin that does not depend on the refractive index can be selected as an adhesive. It is an object of the present invention to provide a small and thin solid-state imaging device, a method for manufacturing the same, and an imaging apparatus equipped with the solid-state imaging device.

  A photoelectric conversion film stacked solid-state imaging device without a microlens of the present invention includes a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a photoelectric conversion film formed on a surface portion of the semiconductor substrate. Signal reading means for reading out a signal corresponding to the amount of signal charge detected by the conversion film according to the amount of incident light to the outside as a captured image signal, and a transparent resin as an adhesive on the light incident side upper layer of the photoelectric conversion film A transparent substrate and an electrical connection provided by being connected to the signal reading means and penetrating through the semiconductor substrate and exposed on the surface of the semiconductor substrate opposite to the surface on which the photoelectric conversion film is provided And a terminal.

  A manufacturing method of a photoelectric conversion film stacked solid-state imaging device without a microlens of the present invention is formed on a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a surface portion of the semiconductor substrate And a signal reading means for reading out a signal corresponding to the signal charge amount detected by the photoelectric conversion film according to the amount of incident light to the outside as a picked-up image signal. The light incident side upper layer of a semiconductor wafer comprising an assembly of a plurality of semiconductor substrates before the semiconductor substrate on which the signal reading means and the photoelectric conversion film are formed is separated from other semiconductor substrates A transparent substrate having the same area as the semiconductor wafer is bonded with a transparent resin, and after the bonding, the semiconductor substrate and the transparent substrate are diced into individual pieces.

  In the method for manufacturing a photoelectric conversion film stacked solid-state imaging device without a microlens according to the present invention, the signal readout means and the semiconductor substrate on which the photoelectric conversion film is formed are separated from the other semiconductor substrates. The transparent substrate separated into the upper layer on the light incident side of the non-defective semiconductor substrate among the semiconductor wafers composed of an assembly of the plurality of semiconductor substrates is pasted with a transparent resin, and the dicing is performed after the pasting. A semiconductor wafer is divided into individual pieces.

  In the method for manufacturing a photoelectric conversion film stacked solid-state imaging device without a microlens according to the present invention, the signal readout means and the semiconductor substrate on which the photoelectric conversion film is formed are separated from the other semiconductor substrates. A thick transparent resin is laminated and cured on the light incident side upper layer of the semiconductor wafer composed of an assembly of a plurality of semiconductor substrates, and the semiconductor wafer is diced after the curing. .

  In the method of manufacturing a photoelectric conversion film stacked solid-state imaging device without a microlens according to the present invention, a plurality of the signal reading means and the semiconductor substrate on which the photoelectric conversion film is formed are arranged on the light incident side upper layer side. The semiconductor substrate is bonded to a single transparent substrate with a transparent resin, and the semiconductor substrate is separated into pieces by dicing the transparent substrate after the bonding.

  In addition, an imaging apparatus according to the present invention includes the above-described photoelectric conversion film stacked solid-state image pickup device not mounted with a microlens or the photoelectric conversion film stacked solid-state image pickup device mounted with any one of the above manufacturing methods. It is mounted.

  According to the present invention, since there is no microlens, there is no need to provide a gap between the transparent substrate and the imaging element chip, and the adhesive can be selected as a transparent adhesive without depending on the refractive index. Thus, it is possible to obtain a solid-state imaging device having a highly reliable and highly reliable element structure, and it is possible to reduce the size and improve the reliability of an imaging apparatus equipped with the solid-state imaging device.

It is a functional block diagram of the digital camera which concerns on one Embodiment of this invention. It is a longitudinal cross-sectional schematic diagram of the solid-state image sensor shown in FIG. It is manufacturing process explanatory drawing of the solid-state image sensor shown in FIG. FIG. 4 is a schematic cross-sectional view taken along the line IV-IV in FIG. 3. It is manufacturing process explanatory drawing of the solid-state image sensor shown in FIG. FIG. 6 is an explanatory diagram of a manufacturing process of the solid-state imaging device of the embodiment instead of FIG. It is a cross-sectional schematic diagram of the solid-state image sensor manufactured in FIG. It is explanatory drawing of the solid-state image sensor which concerns on another embodiment of this invention. It is explanatory drawing of the solid-state image sensor which concerns on another embodiment of this invention. It is explanatory drawing of the solid-state image sensor which concerns on another embodiment of this invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a configuration diagram of a digital camera (imaging device) according to an embodiment of the present invention. This digital camera 20 includes a solid-state image sensor 100, a photographing lens 21 placed in front of the solid-state image sensor 100, and analog image data output from the solid-state image sensor 100 with automatic gain adjustment (AGC) and correlation. An analog signal processing unit 22 that performs analog processing such as multiple sampling processing, an analog / digital conversion unit (A / D) 23 that converts analog image data output from the analog signal processing unit 22 into digital image data, and system control described later A driving control unit (including a timing generator) 24 that controls driving of the photographing lens 21, A / D 23, analog signal processing unit 22, solid-state imaging device 100 according to an instruction from the unit (CPU) 29, and light emission according to an instruction from the CPU 29 And a flash 25.

  The digital camera according to the present embodiment further includes a digital signal processing unit 26 that takes in digital image data output from the A / D 23 and performs interpolation processing, white balance correction, RGB / YC conversion processing, and the like. A compression / expansion processing unit 27 that compresses or reversely compresses image data, a display unit 28 that displays menus, displays through images and captured images, and a system control unit that controls the entire digital camera ( CPU) 29, an internal memory 30 such as a frame memory, and a media interface (I / F) unit 31 that performs interface processing between a recording medium 32 that stores JPEG image data and the like, and a bus that interconnects them 40, and an operation unit 33 for inputting an instruction from the user is connected to the system control unit 29. It has been.

  FIG. 2 is a schematic vertical sectional view of the solid-state imaging device 100 shown in FIG. The solid-state imaging device 100 includes an imaging device chip 101 and a transparent glass substrate 103 attached to the entire front area on the light incident side of the imaging device chip 101 with a transparent resin 102.

  In the present embodiment, in terms of area, the imaging element chip 101 = the transparent glass substrate 102, and the electrical connection terminal 113 of the imaging element chip 101 is a semiconductor constituting the imaging element chip 101 as will be described in detail later. It is provided on the back side of the substrate so as to extend through the through hole, and the connection terminal (connection pad) 113 on the back side is connected to the analog signal processing circuit 22 in FIG.

  As described above, the solid-state imaging device 100 has a configuration in which the imaging device chip 101 is simply bonded to the transparent glass substrate 103, and thus is small and thin. Furthermore, the solid-state imaging device 100 of the present embodiment is formed into a perfect rectangular body, and it becomes easy to handle each solid-state imaging device 100, and to store and transport a large number before shipment from the factory.

  Note that an optically black paint or the like is preferably applied to the side surfaces of the transparent glass substrate 103, the transparent resin 102, and the imaging element chip 101. The same applies to the following embodiments, but by applying black paint, stray light is prevented from entering the image sensor chip 101, and a subject image with less noise can be captured.

  When the solid-state imaging device 100 having such a configuration is assembled to the digital camera 20 of FIG. 1, it is necessary to accurately align the imaging surface of the photographing lens 21 with the light-receiving surface of the imaging device chip 101.

  Since the solid-state imaging device 100 of this embodiment is a photoelectric conversion film laminated type and does not include a microlens, this alignment is stricter than conventional CCD or CMOS type image sensors, and the alignment accuracy is high. If this does not occur, only subject images with poor definition can be taken. This alignment can be performed by assembling the surface of the transparent glass substrate 103 so as to contact an assembly reference surface (not shown) on the photographing lens 21 side.

  FIG. 3 is a manufacturing explanatory diagram of the image sensor chip 101. A large number of image sensor chips 101 are formed on the semiconductor wafer 110 by using a semiconductor device manufacturing technique or a film forming technique, and the individual image sensor chips 101 are diced as described later to be singulated.

  Each image pickup device chip 101 is formed in a rectangular shape in a top view, a rectangular image pickup region 112 is formed in the central portion, and a connection pad 113 is formed in the peripheral portion. A transparent glass substrate 103 is pasted on the entire front surface area of the imaging element chip 101. The connection pad 113 is provided in the imaging element chip 101, and is formed so that a metal line extends from the connection pad 113 to the back side of the imaging element chip 101 through a through hole.

  4 is a schematic cross-sectional view taken along the line IV-IV in FIG. The imaging element chip 101 is formed on the semiconductor substrate 121. In the semiconductor substrate 121, a signal charge accumulating unit 122 corresponding to each pixel is formed, and further, a signal readout circuit including a MOS transistor circuit (not shown) corresponding to each pixel is formed in the same manner as in the CMOS image sensor. . Each signal readout circuit reads out a signal corresponding to the accumulated charge in the corresponding signal charge accumulation unit 122 as a captured image signal to the outside through the corresponding connection pad 113.

  An insulating film 124 is laminated on the upper surface of the semiconductor substrate 121, and pixel electrode films 125 corresponding to individual pixels are arranged and formed in a two-dimensional array in the imaging region. The pixel electrode film 125 is formed of a conductive material such as aluminum or indium tin oxide (ITO).

  Each pixel electrode film 125 and the signal charge storage unit 122 corresponding to the pixel are electrically connected by a via plug 126 erected in the insulating film 124. In the middle of each via plug 126, individually separated metal films 127 are embedded in the insulating layer 124, and the metal film 127 is intended to shield the signal charge storage portion 122.

  On each pixel electrode film 125, a single photoelectric conversion film 130 is laminated over the entire imaging region. As the photoelectric conversion film 130, an organic film that generates charges according to the amount of incident light is used in this embodiment. As a material for the organic film, for example, metarocyanine, phthalocyanine, and 4H pyran are used. The organic film 130 is formed with a thickness of about 1.0 μm.

  Accordingly, when the alignment described with reference to FIG. 2 is performed so that the imaging surface of the photographing lens 21 in FIG. 1 matches the organic film 130 having a thickness of about 1.0 μm, a high-definition subject image is photographed. It becomes possible.

  On the organic film 130, a transparent counter electrode film 131 such as a single-layer ITO is laminated, and the transparent protective film 132 is covered thereon. In the case of a solid-state imaging device that captures a color image, for example, a RGB color filter layer in a Bayer array is laminated on a protective film (or planarization layer) 132, and a transparent protective film is further formed thereon. Cover with.

  The counter electrode film 131 is connected to the high concentration impurity layer 134 of the semiconductor substrate 121 by a via plug 133, and a required voltage is applied from the outside via the high concentration impurity layer 134, a wiring layer (not shown) and the corresponding connection pad 113. 131 is applied.

  The connection pad 113 includes a pad portion 113a formed in the insulating layer 124 in the same manufacturing process as the metal film 127, and a metal wiring layer 113b extending from the pad portion 113a through the semiconductor substrate 121 to the back side. For example, the output line of the signal readout circuit is connected to the corresponding connection pad 113 by a wiring layer (not shown).

  The metal wiring layer 113b is formed by opening a through hole penetrating the semiconductor substrate 121 and reaching the pad portion 113a, and filling the through hole with metal. Thus, by providing the connection pad 113 on the back side of the substrate, it is possible to cover the entire front surface area of the imaging element chip 101 with the transparent glass substrate 103.

  In the photoelectric conversion film stacked solid-state imaging device chip having such a configuration, when incident light is incident on the organic film 130 through the protective film 132 and the counter electrode film 131, a hole / electron pair corresponding to the amount of incident light is generated in the organic film 130. appear. Holes flow to the counter electrode film 131, electrons flow to the signal charge storage unit 122 through each pixel electrode film 125, and a captured image signal corresponding to the amount of charge stored in the signal charge storage unit 122 is externally output by the signal readout circuit. Read out.

  In this photoelectric conversion film laminated solid-state imaging device chip 101, since the signal readout circuit is provided on the lower semiconductor substrate 121, incident light can be received on the entire upper surface of the light receiving surface, and a microlens can be used like a conventional image sensor. There is no need to focus on individual photodiodes. For this reason, the transparent adhesive used when the transparent glass substrate 102 shown in FIG. 2 is pasted on the protective film 132 or, if a color filter is provided, on the protective film thereon, is refracted. It is not necessary to consider the rate, and the transparent resin material can be selected by giving priority to other factors such as the water absorption rate, so that the reliability of the element can be improved, or a low-cost transparent resin material can be selected.

  Next, a method for manufacturing the above-described solid-state imaging device 100 will be described. As shown in the lower part of FIG. 3, after a large number of image sensor chips are manufactured on the semiconductor wafer 110, a circle having the same area as the semiconductor wafer 110 is formed on the entire upper surface of the semiconductor wafer 110 as shown in the upper part of FIG. 5. A plate-like transparent glass substrate 115 is bonded together using the transparent resin 102 as an adhesive.

  Then, as shown in the lower part of FIG. 5, the individual image pickup device chip 101 is diced into individual pieces, thereby obtaining the solid-state image pickup device 100 of FIG. In FIG. 5, the semiconductor wafer 110 is separated into the image pickup device chip 101, and the transparent glass substrate 115 is separated into the transparent glass substrate 103.

  FIG. 6 is a diagram illustrating a method for manufacturing the solid-state imaging device 200 according to another embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to FIG. 2, and the description is abbreviate | omitted.

  In this embodiment, as shown in the lower part of FIG. 3, after a large number of image sensor chips are manufactured on the semiconductor wafer 110, as shown in FIG. The transparent glass substrate 103 separated into pieces is pasted with the transparent resin 102. As shown in FIG. 6B, the transparent glass substrate 103 is not attached on a defective product (NG element), and therefore, it also has a meaning of marking indicating a non-defective product during manufacture.

  Next, as shown in FIG. 6C, the wafer is diced and separated into individual solid-state imaging devices 100. As a dicing method, a dicing blade or laser light can be used.

  FIG. 7 shows a cross section of the solid-state imaging device 200 that has been singulated. In the solid-state imaging device 100 shown in FIG. 2, the transparent glass substrate 103 and the imaging device chip 101 have the same area. However, the solid-state imaging device 200 according to the present embodiment has the transparent glass substrate 103 separated into pieces on a non-defective chip. Therefore, the area of the transparent glass substrate 103 is slightly smaller than the area of the image pickup device chip 101.

  Even with this configuration, similarly to the solid-state imaging device 100 of FIG. 2, the size and thickness of the imaging device can be reduced, and the imaging device can be reduced in size and thickness. Moreover, since there are a wide range of material choices for the transparent resin 102, it becomes easy to select a transparent resin with high reliability or an inexpensive transparent resin.

  FIGS. 8A and 8B are views showing a method for manufacturing a solid-state image sensor 300 according to still another embodiment of the present invention, and FIG. 8C is a schematic cross-sectional view of the solid-state image sensor 300. The present embodiment is different from the solid-state imaging device 100 of FIG. 2 in that the transparent glass substrate 103 is not used but the transparent resin 102 is thickly applied to replace the transparent glass substrate 103.

  That is, as shown in FIG. 8A, a thick transparent resin 102 is applied on the semiconductor wear 110 on which a large number of image sensor chips are formed, and after the transparent resin is cured, the transparent resin 102 is shown in FIG. Similarly, the solid-state imaging device 300 of FIG. 8C is manufactured by dicing each imaging device chip 101.

  In the present embodiment, since the thick transparent resin 102 is used instead of the transparent glass substrate, it is preferable to select a resin that has a glassy hardness when cured and has a surface that is hardly damaged.

  FIGS. 9A and 9B are views showing a method for manufacturing a solid-state imaging device 400 according to still another embodiment of the present invention, and FIG. 9C is a schematic cross-sectional view of the solid-state imaging device 400. FIG. In the present embodiment, a plurality of image pickup device chips 101 formed on a semiconductor wafer are diced into individual pieces, and only non-defective products are selected. As shown in FIG. A transparent resin 102 is attached to the substrate 115.

  Then, as shown in FIG. 9B, a transparent glass substrate 103 between adjacent imaging element chips 101 is diced into a transparent glass substrate 103, and the solid-state imaging element 400 shown in FIG. To do.

  Also with this configuration, a small and thin solid-state image sensor with high reliability can be obtained, as with the solid-state image sensor 100 of FIG.

  10A and 10B are views showing a method for manufacturing a solid-state imaging device 500 according to still another embodiment of the present invention, and FIG. 10C is a schematic cross-sectional view of the solid-state imaging device 500.

  This embodiment is basically the same as the solid-state imaging device 400 shown in FIG. 9 except that a non-defective imaging device chip 101 is pasted on a disc-shaped transparent glass substrate 115. As shown in FIG. 10A, a gap 104 is formed between the imaging element chips 101. However, the gap 104 is filled with the resin 105 as shown in FIG. As the resin, it is preferable to use an optically black resin. By setting it to black, stray light can be prevented from entering the image sensor chip 101.

  Then, as shown in FIG. 10C, the portion of the resin 105 is diced to separate the solid-state imaging device 500 into individual pieces. As a result, the solid-state imaging device 500 becomes a complete rectangular body, which can be easily handled and can prevent damage to the end of the transparent glass substrate 103. By using black resin, stray light can be prevented from entering.

  In the embodiment of FIG. 7 as well, a stepped portion between the transparent glass substrate 103 and the image pickup device chip 101 is covered (filled) with a black resin to form a complete rectangular body, thereby preventing the image pickup device chip 101 from being chipped and stray light incident. Needless to say, it may be possible to prevent this.

  As described above, the solid-state imaging devices 100, 200, 300, 400, and 500 according to the above-described embodiments are basically imaged only by the transparent glass substrate 103 (or thick transparent resin) and the imaging device chip 101. Since the element module is formed, the thickness is reduced as a whole as compared with a conventional CCD type or CMOS type image sensor. Therefore, it is suitable for mounting on a small electronic device such as a distal end portion of an endoscope or a mobile phone.

  As described above, the photoelectric conversion film stacked solid-state imaging device without the microlens according to the present embodiment includes the semiconductor substrate, the photoelectric conversion film stacked on the light incident side upper layer of the semiconductor substrate, and the semiconductor substrate. A signal reading unit that is formed on the surface and reads out a signal corresponding to the amount of signal charge detected by the photoelectric conversion film according to the amount of incident light as an imaged image signal; and a transparent resin on the light incident side upper layer of the photoelectric conversion film A transparent substrate pasted as an adhesive, and a wiring connected to the signal reading means and provided through the semiconductor substrate and exposed on the surface of the semiconductor substrate opposite to the surface on which the photoelectric conversion film is provided. And an electrical connection terminal provided.

  Further, in the photoelectric conversion film laminated solid-state imaging device not mounted with the microlens of the embodiment, the distance between the opposite surface where the electrical connection terminal is exposed and the surface of the transparent substrate is the total thickness. Features.

  Moreover, the photoelectric conversion film laminated solid-state imaging device without the microlens according to the embodiment is characterized in that the transparent substrate and the semiconductor substrate have the same area.

  In addition, the photoelectric conversion film laminated solid-state imaging device not mounted with the microlens according to the embodiment is characterized in that the transparent resin is thickly formed instead of the transparent substrate.

  Moreover, the photoelectric conversion film laminated solid-state imaging device not mounted with the microlens according to the embodiment is characterized in that the transparent substrate has a smaller area than the semiconductor substrate.

  Moreover, the photoelectric conversion film laminated solid-state imaging device not mounted with the microlens according to the embodiment is characterized in that the transparent substrate has a larger area than the semiconductor substrate.

  Further, in the photoelectric conversion film laminated solid-state imaging device not mounted with the microlens of the embodiment, the stepped portion due to the difference in area between the transparent substrate and the semiconductor substrate is filled with resin to form a complete rectangular body as a whole. Features.

  In addition, the photoelectric conversion film laminated solid-state imaging device without the microlens according to the embodiment is characterized in that the side surface is painted black.

  In addition, a method for manufacturing a photoelectric conversion film stacked solid-state imaging device not mounted with a microlens according to an embodiment includes a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a surface portion of the semiconductor substrate. A photoelectric conversion film stack type solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that is externally formed and read out as a captured image signal a signal corresponding to the amount of signal charge detected by the photoelectric conversion film according to the amount of incident light. The light incidence of a semiconductor wafer comprising a plurality of semiconductor substrate assemblies before the semiconductor substrate on which the signal reading means and the photoelectric conversion film are formed is separated from other semiconductor substrates. A transparent substrate having the same area as the semiconductor wafer is bonded to the upper side layer with a transparent resin, and after the bonding, the semiconductor substrate and the transparent substrate are diced into individual pieces. .

  In addition, a method for manufacturing a photoelectric conversion film stacked solid-state imaging device not mounted with a microlens according to an embodiment includes a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a surface portion of the semiconductor substrate. A photoelectric conversion film stack type solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that is externally formed and read out as a captured image signal a signal corresponding to the amount of signal charge detected by the photoelectric conversion film according to the amount of incident light. A manufacturing method, wherein the semiconductor substrate on which the signal reading means and the photoelectric conversion film are formed is a non-defective product out of a plurality of semiconductor wafers before being separated from other semiconductor substrates. The transparent substrate separated into the upper layer on the light incident side of the semiconductor substrate is pasted with a transparent resin, and the semiconductor wafer is separated into pieces by dicing after the pasting. That.

  In addition, a method for manufacturing a photoelectric conversion film stacked solid-state imaging device not mounted with a microlens according to an embodiment includes a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a surface portion of the semiconductor substrate. A photoelectric conversion film stack type solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that is externally formed and read out as a captured image signal a signal corresponding to the amount of signal charge detected by the photoelectric conversion film according to the amount of incident light. The light incidence of a semiconductor wafer comprising a plurality of semiconductor substrate assemblies before the semiconductor substrate on which the signal reading means and the photoelectric conversion film are formed is separated from other semiconductor substrates. A thick transparent resin is laminated on the side upper layer and cured, and after the curing, the semiconductor wafer is separated into individual pieces.

  In addition, a method for manufacturing a photoelectric conversion film stacked solid-state imaging device not mounted with a microlens according to an embodiment includes a semiconductor substrate, a photoelectric conversion film stacked on a light incident side upper layer of the semiconductor substrate, and a surface portion of the semiconductor substrate. A photoelectric conversion film stack type solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that is externally formed and read out as a captured image signal a signal corresponding to the amount of signal charge detected by the photoelectric conversion film according to the amount of incident light. In the manufacturing method, a plurality of the signal reading means and the semiconductor substrate on which the photoelectric conversion film is formed are attached to one transparent substrate with a transparent resin on the light incident side upper layer side, and after the attachment, The transparent substrate is diced to separate the semiconductor substrate.

  Further, in the method for manufacturing a photoelectric conversion film laminated solid-state imaging device not mounted with a microlens according to the embodiment, a gap between adjacent semiconductor substrates is resinized after a plurality of the semiconductor substrates are attached to the single transparent substrate. After the resin is cured and cured, the resin and the transparent substrate are diced to separate the semiconductor substrate.

  In addition, the method for manufacturing a photoelectric conversion film laminated solid-state imaging device not mounted with a microlens according to the embodiment is characterized in that the resin is an optically black resin.

  In addition, the photoelectric conversion layer stacked solid-state imaging device without the microlens according to the embodiment is manufactured by any one of the manufacturing methods described above.

  In addition, the imaging apparatus according to the embodiment is characterized in that the photoelectric conversion film laminated solid-state imaging element not mounted with any of the above-described microlenses is mounted.

  According to the present embodiment, it is possible to manufacture a solid-state imaging device having a small, thin, and highly productive device structure, and to obtain a solid-state imaging device having no hollow structure and having high reliability, and dust on the imaging device chip. Therefore, it is possible to obtain a solid-state imaging device with higher reliability due to a structure that does not enter the surface.

  Since the photoelectric conversion film laminated solid-state imaging device without a microlens according to the present invention is small and thin, and has high mass productivity and reliability, a digital still camera, a digital video camera, a mobile phone with a camera, an electronic with a camera It is useful to install in devices, surveillance cameras, endoscopes, in-vehicle cameras, etc.

20 Imaging device (digital camera)
21 photographing lens 26 digital signal processing unit 29 system control unit 100 photoelectric conversion film laminated solid-state imaging device 101 imaging device chip 102 transparent resin (adhesive)
103 transparent glass substrate 104 gap 105 black resin 110 semiconductor wafer 112 imaging region 113 connection pad 115 disk-shaped transparent glass substrate 121 semiconductor substrate 125 pixel electrode film 130 photoelectric conversion film 131 counter electrode film 132 protective film

Claims (16)

  A semiconductor substrate, a photoelectric conversion film laminated on a light incident side upper layer of the semiconductor substrate, and a signal according to a signal charge amount formed on the surface portion of the semiconductor substrate and detected by the photoelectric conversion film according to an incident light amount Signal reading means for reading out as a captured image signal, a transparent substrate having a transparent resin attached to the upper layer on the light incident side of the photoelectric conversion film, and a wiring connected to the signal reading means and penetrating through the semiconductor substrate And a photoelectric conversion film stacked solid-state imaging device without a microlens provided with an electrical connection terminal exposed on a surface opposite to the surface on which the photoelectric conversion film of the semiconductor substrate is provided.   2. The photoelectric conversion layer stacked solid-state image pickup device having no microlens mounted thereon according to claim 1, wherein the distance between the opposite surface where the electrical connection terminal is exposed and the surface of the transparent substrate is the total thickness. A photoelectric conversion film laminated solid-state imaging device without a microlens.   3. The photoelectric conversion film laminated solid-state image pickup device without mounting the microlens according to claim 1, wherein the transparent substrate and the semiconductor substrate have the same area, and the photoelectric conversion film stacking type without mounting the microlens. Solid-state image sensor.   4. A photoelectric conversion film laminated solid-state image pickup device without a microlens according to claim 3, wherein the transparent resin is thickly formed in place of the transparent substrate, and the photoelectric conversion film laminate solid-state image pickup device without a microlens is mounted. .   3. The photoelectric conversion film stacked solid-state imaging device not mounted with a microlens according to claim 1, wherein the transparent substrate has a smaller area than the semiconductor substrate and the photoelectric conversion film stacked solid without the microlens is mounted. Image sensor.   3. The photoelectric conversion film stacked solid-state image pickup device without a microlens according to claim 1, wherein the transparent substrate has a larger area than the semiconductor substrate, and the photoelectric conversion film stack with the microlens is not mounted. Image sensor.   7. The photoelectric conversion film laminated solid-state image pickup device having no microlens mounted thereon according to claim 5 or 6, wherein a step portion due to a difference in area between the transparent substrate and the semiconductor substrate is filled with a resin, and the whole is completely formed. A photoelectric conversion film laminated solid-state imaging device without a microlens, which is a simple rectangular body.   7. A photoelectric conversion film laminated solid-state imaging device not mounted with a microlens according to any one of claims 1 to 6, wherein the photoelectric conversion film stacked solid-state imaging without a microlens whose side surface is painted black. element.   A semiconductor substrate, a photoelectric conversion film laminated on a light incident side upper layer of the semiconductor substrate, and a signal according to a signal charge amount formed on the surface portion of the semiconductor substrate and detected by the photoelectric conversion film according to an incident light amount A method for manufacturing a photoelectric conversion film stacked solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that reads out to the outside as a captured image signal, wherein the semiconductor substrate on which the signal reading unit and the photoelectric conversion film are formed includes: A transparent substrate having the same area as that of the semiconductor wafer is bonded to the light incident side upper layer of the semiconductor wafer, which is an assembly of a plurality of the semiconductor substrates before being separated from the other semiconductor substrates, and after the bonding A manufacturing method of a photoelectric conversion film laminated solid-state imaging device without a microlens, wherein the semiconductor substrate and the transparent substrate are diced into individual pieces.   A semiconductor substrate, a photoelectric conversion film laminated on a light incident side upper layer of the semiconductor substrate, and a signal according to a signal charge amount formed on the surface portion of the semiconductor substrate and detected by the photoelectric conversion film according to an incident light amount A method for manufacturing a photoelectric conversion film stacked solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that reads out to the outside as a captured image signal, wherein the semiconductor substrate on which the signal reading unit and the photoelectric conversion film are formed includes: The transparent substrate separated into the upper layer on the light incident side of the non-defective semiconductor substrate is bonded with a transparent resin among the semiconductor wafers composed of an assembly of the plurality of semiconductor substrates before being separated from the other semiconductor substrates. A manufacturing method of a photoelectric conversion film laminated solid-state imaging device not mounted with a microlens, wherein the semiconductor wafer is diced after bonding and dicing.   A semiconductor substrate, a photoelectric conversion film laminated on a light incident side upper layer of the semiconductor substrate, and a signal according to a signal charge amount formed on the surface portion of the semiconductor substrate and detected by the photoelectric conversion film according to an incident light amount A method for manufacturing a photoelectric conversion film stacked solid-state imaging device not equipped with a microlens, comprising: a signal reading unit that reads out to the outside as a captured image signal, wherein the semiconductor substrate on which the signal reading unit and the photoelectric conversion film are formed includes: A thick transparent resin is laminated and cured on the upper layer on the light incident side of the semiconductor wafer formed of an assembly of a plurality of semiconductor substrates before being separated from other semiconductor substrates, and the semiconductor wafer is diced after the curing. Manufacturing method of photoelectric conversion film lamination type solid-state image sensing device which does not mount microlens which singulates.   A semiconductor substrate, a photoelectric conversion film laminated on a light incident side upper layer of the semiconductor substrate, and a signal according to a signal charge amount formed on the surface portion of the semiconductor substrate and detected by the photoelectric conversion film according to an incident light amount A method for manufacturing a photoelectric conversion film stacked solid-state imaging device not equipped with a microlens, the signal reading means reading out to the outside as a picked-up image signal, wherein the semiconductor on which the plurality of signal reading means and the photoelectric conversion film are formed A substrate on which the upper layer of the light incident side is bonded to a transparent substrate with a transparent resin, and after the bonding, the transparent substrate is diced to separate the semiconductor substrate. Type solid-state imaging device manufacturing method.   13. The method for manufacturing a photoelectric conversion film laminated solid-state imaging device having no microlens according to claim 12, wherein a plurality of the semiconductor substrates are attached to the one transparent substrate, and the semiconductor substrates are adjacent to each other. A method of manufacturing a photoelectric conversion film stacked solid-state imaging device without a microlens, wherein a gap is filled with a resin and the resin and the transparent substrate are diced to separate the semiconductor substrate after the resin is cured.   14. The method of manufacturing a photoelectric conversion film laminated solid-state image pickup device without mounting a microlens according to claim 13, wherein the resin is an optically black resin. Manufacturing method.   A photoelectric conversion film laminated solid-state image pickup device without a microlens manufactured by the method for manufacturing a photoelectric conversion film laminated solid-state image pickup device without a microlens according to any one of claims 9 to 14.   The imaging device which mounts the photoelectric conversion film | membrane laminated | stacked solid-state image sensor of any one of Claims 1 thru | or 8, or the microlens non-mounting of Claim 15.

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