JP4503452B2 - Method for manufacturing solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device and an optical module including a solid-state imaging device.

FIG. 9 is a schematic cross-sectional view illustrating an example of a solid-state imaging device.
A semiconductor substrate 89 on which a solid-state image sensor is formed is placed and bonded in a package 86. The semiconductor substrate 89 and the inner lead 90 a are wire-bonded and electrically connected by a wire 88. The inner lead 90a is pulled out of the package 86 and becomes the outer lead 90b.

A cover glass 87 is placed above the semiconductor substrate 89 to secure light incident on the solid-state image sensor and protect the semiconductor substrate 89 on which the solid-state image sensor is formed.
In the case of the solid-state image pickup device in which the solid-state image pickup device is packaged as shown in this figure, the degree of the size of the package 86 when compared with the size of the semiconductor substrate 89 (semiconductor chip) is large. It is difficult to reduce the size of a product using the solid-state imaging device. Further, since the price of the package 86 is high, it is not suitable for low-cost production of the product.

  10A to 10H are schematic cross-sectional views showing a method for manufacturing another example of a solid-state imaging device (chip size package (CSP) manufactured at a wafer level). Since CSP is inexpensive, products using it can be manufactured at low cost.

  Reference is made to FIG. A plurality of solid-state imaging elements 92 are formed on a semiconductor substrate 91 (wafer). Note that the solid-state imaging element 92 does not actually appear in the cross-sectional view, but is shown by a dotted line for convenience of explanation.

  A passivation film 93 is formed on the surface of the semiconductor substrate 91 on the side where the solid-state imaging element 92 is formed. The surface of the semiconductor substrate 91 is exposed by etching the passivation film 93, and a pad 94 is formed from the exposed surface with a conductive material.

  Reference is made to FIG. A cover glass 96 is bonded with an adhesive 95 on the semiconductor substrate 91 on the side where the solid-state imaging element 92 is formed. For example, an epoxy resin adhesive is used as the adhesive 95.

  Reference is made to FIG. A notch (intermediate cut hole) 97 a is formed in the semiconductor substrate 91 from the side where the solid-state imaging element 92 is not formed. The notch 97a is formed between adjacent solid-state imaging elements 92 by, for example, mechanical polishing and etching. When forming the notch 97a, the passivation film 93 is not cut.

  Reference is made to FIG. A back cover glass 99 is bonded onto the semiconductor substrate 91 on the side where the solid-state imaging element 92 is not formed, using, for example, an epoxy resin adhesive 98. The adhesive 98 is poured into the notch 97a, and the back cover glass 99 is adhered so as to cover the notch 97a. On the back cover glass 99, the barrier layer 100 is formed by etching.

  Reference is made to FIG. From the back cover glass 99 side, a notch 97b is formed in a portion including the back cover glass 99, the adhesive 98, the passivation film 93, and the pad 94. The notch 97b is formed between adjacent solid-state imaging elements 92 by, for example, mechanical polishing and etching.

  Reference is made to FIG. A lead wire 101 drawn from the surface of the notch 97b to the surface of the back cover glass 99 is formed. The lead wire 101 has a two-layer structure of, for example, a Ni—Au layer and an Al layer, and has a thickness of about 3 μm. A metal layer is deposited and patterned by photolithography and etching.

  As a result, the lead wire 101 and the pad 94 are electrically connected. At both contact points, a T contact 102 is formed. Here, the T contact refers to a contact state obtained as a result of two conductors contacting each other in a “T” shape. On the back cover glass 99 side, the lead wire 101 is electrically connected to the barrier layer 100.

Reference is made to FIG. A passivation film 103 is formed so as to cover the lead wire 101.
Reference is made to FIG. After the solder ball 104 is formed on the barrier layer 100, the cover glass 96 is diced at the position of the notch 97b, and separated for each semiconductor substrate 91 (chip) on which each solid-state image sensor is formed.

The CSP can be manufactured through the steps as described above. (For example, see Patent Document 1.)
FIG. 11 is a cross-sectional view illustrating a schematic configuration of an optical module assembled using a solid-state imaging device.

  A solid-state imaging device 113 is placed on and bonded to the surface of the support substrate 112. The lens barrel 114 is also brought into contact with and bonded to the support substrate 112. An imaging lens 115 that connects an object image on the solid-state imaging device 113 is supported by the lens barrel 114. An infrared cut filter 116 that shields infrared rays contained in incident light is supported by the lens barrel 114 at a height between the imaging lens 115 and the solid-state imaging device 113.

  A signal processing element 117 that performs various processes such as recognition processing, data compression, and network control, and a driving IC (integrated circuit) 118 that supplies a driving signal to the solid-state imaging device 113 are bonded to the back surface of the support substrate 112. ing.

  An optical module incorporated in a small device, for example, a mobile phone, is restricted to a height of, for example, 5 mm to 8 mm. However, it is difficult to install the infrared cut filter 116 in the lens barrel 114 under such restrictions.

US Pat. No. 6,040,235

An object of the present invention is to provide a solid-state imaging device suitable for product miniaturization.
Another object of the present invention is to provide a miniaturized optical module.

  According to one aspect of the present invention, a semiconductor substrate on which a solid-state imaging device having a light receiving region is formed on the front surface side, and a first substrate formed on the surface of the semiconductor substrate and reaching a side edge of the semiconductor substrate. A connection terminal; a first insulation structure formed on a side surface and a back surface of the semiconductor substrate; a second connection terminal formed on the first insulation structure on a back surface side of the semiconductor substrate; A wiring for electrically connecting the first connection terminal and the second connection terminal; a second insulating structure formed on the wiring; and an infrared shielding layer formed above the surface of the semiconductor substrate. There is provided a solid-state imaging device having a light introduction window for introducing light incident on the light receiving region.

When this solid-state imaging device is used, the product can be reduced in size.
According to another aspect of the present invention, a semiconductor substrate having a solid-state imaging device provided with a light receiving region on the surface side, and a semiconductor substrate formed on the surface of the semiconductor substrate and reaching a side edge of the semiconductor substrate. A first connecting terminal; a first insulating structure formed on a side surface and a back surface of the semiconductor substrate; and a second connecting terminal formed on the first insulating structure on a back surface side of the semiconductor substrate. A wiring for electrically connecting the first connection terminal and the second connection terminal; a second insulating structure formed on the wiring; and an infrared shielding layer formed above the surface of the semiconductor substrate. An optical module is provided that includes a light introduction window that includes a layer and introduces light incident on the light receiving region, and a lens that is disposed above the light introduction window and forms an image of light on the semiconductor substrate.

  This optical module is a miniaturized optical module.

A solid-state imaging device suitable for downsizing of a product can be provided.
In addition, a miniaturized optical module can be provided.

  FIG. 1A is a block diagram illustrating a schematic configuration of a main part of a solid-state imaging device incorporating a solid-state imaging device. FIGS. 1B and 1C illustrate a configuration of a CCD solid-state imaging device. FIG. FIG. 1D is a diagram for explaining a MOS solid-state imaging device.

  Reference is made to FIG. The solid-state imaging device includes, for example, a solid-state imaging device 51, a drive signal generation device 52, an output signal processing device 53, a recording device 54, a display device 55, a transmission device 56, and a television 57.

  The solid-state imaging device 51 includes a photoelectric conversion element that generates a signal charge according to the amount of incident light for each pixel (a charge storage region that stores the generated signal charge), and a vertical transfer for transferring the signal charge generated by the photoelectric conversion element. A channel, a vertical transfer electrode, a horizontal transfer channel, and a horizontal transfer electrode are provided.

  The solid-state image sensor 51 is roughly classified into a CCD type and a MOS type. In the CCD type, charges generated in pixels are transferred by a charge coupled device (CCD). In the MOS type, charges generated in a pixel are amplified by a MOS transistor and output. Although not particularly limited, in this specification, a CCD type will be described as an example in principle.

  The drive signal generator 52 generates and outputs a signal for driving the solid-state image sensor 51. The drive signal generator 52 includes, for example, an integrated circuit (IC) for driving the transfer electrode of the solid-state image sensor 51. The signals output from the drive signal generator 52 to the solid-state imaging device 51 are, for example, a vertical CCD drive signal, a horizontal CCD drive signal, an output amplifier drive signal, and a substrate bias signal.

The output signal processor 53 includes an AFE (analog front end processor) and a DSP (digital signal processor).
The AFE performs correlated double sampling on the analog image signal output from the solid-state imaging device 51 at two locations of the reference potential portion and the signal potential portion, and applies an appropriate gain to the difference to apply A / D (analog to digital). ) Convert and output as a digital image signal.

The DSP performs various processes such as recognition processing, data compression, and network control on the digital image signal output from the AFE, and outputs the image data. The image data processed by the output signal processing unit 53 is, for example, The data is output to a recording device 54 that is a storage card, for example, a display device 55 that is a liquid crystal display device, a transmission device 56, or a television 57.

  FIG. 1B shows a schematic configuration of an interline type CCD solid-state imaging device. The CCD solid-state imaging device includes a photosensitive unit 62, a vertical CCD unit 64, a horizontal CCD unit 66, and an output unit 67.

  The solid-state imaging device is electrically coupled to, for example, a plurality of photosensitive portions 62 arranged in a matrix, a plurality of vertical CCD portions 64 formed close to each column of the photosensitive portions 62, and a plurality of vertical CCD portions 64. The horizontal CCD unit 66 and an output unit 67 that is provided at an end of the horizontal CCD unit 66 and converts the output charge signal from the horizontal CCD unit 66 into a voltage and outputs the voltage. In addition, this figure is the figure which looked at the semiconductor substrate in which the photosensitive part 62 grade | etc., Was formed from the normal line direction (above).

  The photosensitive unit 62 includes a photosensitive element such as a photodiode and a reading unit. The photodiode generates and accumulates signal charges according to the amount of incident light. Reading of the accumulated signal charge to the vertical CCD unit 64 (vertical transfer channel) is controlled by a voltage applied to the electrode of the reading unit. The signal charge read to the vertical CCD unit 64 (vertical transfer channel) is transferred in the vertical CCD unit 64 (vertical transfer channel) as a whole toward the horizontal CCD unit 66 (vertical direction, column direction). . The signal charges transferred to the end of the vertical CCD unit 64 are transferred to the horizontal CCD unit 66, transferred in the horizontal direction (row direction) as a whole in the horizontal CCD unit 66 (horizontal transfer channel), and charged in the output unit 67.・ Voltage converted and taken out.

  The charge reading from the photosensitive unit 62 to the vertical CCD unit 64 (vertical transfer channel) and the transfer of the charge in the vertical CCD unit 64 (vertical transfer channel) are performed by driving the vertical transfer electrode of the solid-state imaging device. . In addition, charge transfer in the horizontal CCD unit 66 (horizontal transfer channel) is performed by driving the horizontal transfer electrode of the solid-state imaging device.

  The photosensitive sections 62 are arranged in a square (tetragonal) matrix at a constant pitch in the row direction and the column direction as shown in FIG. 1B, and 1 in the row direction and the column direction. There is a honeycomb arrangement in which every other position is shifted, for example, by 1/2 pitch. In the honeycomb arrangement, the photosensitive portions 62 arranged in a first square matrix and the photosensitive portions 62 arranged in a second square matrix at interstitial positions thereof are included.

  FIG. 1C shows a schematic configuration of a CCD type solid-state imaging device arranged in a honeycomb. The honeycomb arrangement means an arrangement of the photosensitive portions 62 including the photosensitive portions 62 arranged in the first square matrix and the photosensitive portions 62 arranged in the second square matrix at the interstitial positions. . The vertical CCD unit 64 (vertical transfer channel) is formed to meander between the photosensitive units 62. Although the honeycomb arrangement is used, the photosensitive portion 62 in this configuration is often octagonal.

  FIG. 1D shows an outline of the photosensitive portion of the MOS type solid-state imaging device. The signal charge generated according to the amount of incident light by the photoelectric conversion element 68 is amplified by the MOS transistor 69 and output. The MOS type solid-state imaging device does not include a vertical CCD unit or a horizontal CCD unit, and includes a photoelectric conversion element 68 and a MOS transistor 69 for each pixel.

2A is a schematic plan view showing a part of the light receiving portion of the CCD solid-state imaging device, and FIG. 2B is a schematic view taken along line 2B-2B in FIG. 2A. It is sectional drawing.
Reference is made to FIG. A vertical transfer channel 73 is formed along the column direction (vertical direction in the drawing) of the photodiodes 71 formed in a matrix. First layer vertical transfer electrodes 75a and second layer vertical transfer electrodes 75b are alternately formed in the column direction so as to cover the vertical transfer channel 73.

  The first layer vertical transfer electrode 75 a reads out the signal charge generated by the photodiode 71 to the vertical transfer channel 73 and transfers the signal charge in the vertical transfer channel 73. Reading of the signal charge to the vertical transfer channel 73 is performed via the reading unit 74. Therefore, the first layer vertical transfer electrode 75a is formed so as to cover the upper part of the reading unit 74.

The second layer vertical transfer electrode 75 b is used to transfer signal charges in the vertical transfer channel 73.
The first layer and the second layer vertical transfer electrodes 75a and 75b are, for example, a set of four electrodes, and transfer signal charges in the vertical transfer channel 73 by four-phase driving.

  Reference is made to FIG. For example, a p-type well layer 82 formed on a semiconductor substrate 81 which is an n-type silicon substrate is provided with a photodiode 71 (charge storage region) composed of an n-type impurity doped region and an n-type region adjacent thereto. A vertical transfer channel 73 is formed. Above the vertical transfer channel 73, a first layer vertical transfer electrode 75a and a second layer vertical transfer electrode 75b are formed of polysilicon, for example. It is also possible to form with amorphous silicon.

  The first layer and second layer vertical transfer electrodes 75a and 75b transfer the signal charges in the vertical transfer channel 73 by controlling the potential of the vertical transfer channel 73 with a voltage (drive signal) applied thereto. . Further, the first layer vertical transfer electrode 75a controls the potential of the reading unit with an applied voltage (drive signal), and the signal charge generated and accumulated by the photodiode 71 according to the amount of incident light is transferred to the vertical transfer channel 73. Also plays the role of reading out. The vertical CCD unit 64 includes the vertical transfer channel 73 and the first and second layer vertical transfer electrodes 75a and 75b thereabove.

  A light shielding film 79 having a thickness of 0.2 μm is formed of tungsten, for example, above the first layer and second layer vertical transfer electrodes 75a and 75b. In the light shielding film 79, an opening (light introducing portion) 79 a is formed above each photodiode 71.

Light enters each photodiode 71 through the opening (light introducing portion) 79a. The light shielding film 79 prevents light incident on the light receiving unit from entering a region other than the photoelectric conversion element 71.
The upper portion of the light shielding film 79 is flattened by, for example, BPSG (boro-phosphosilicate glass), and the color filter layer 84 is formed on the flat surface. The color filter layer 84 includes, for example, three primary color filter portions of an R (red) portion 84r, a G (green) portion 84g, and a B (blue) portion 84b.

  Microlenses 85 are formed above the color filter layer 84 so as to correspond to the R portion 84r, the G portion 84g, and the B portion 84b. The microlens 85 is formed by arranging, for example, minute hemispherical convex lenses above each photodiode 71. The microlens 85 collects incident light on the photodiode 71. The light focused by one microlens 85 is incident on one photodiode 71 through any of the R portion 84r, the G portion 84g, and the B portion 84b.

  FIG. 3 is a schematic cross-sectional view showing the solid-state imaging device according to the first embodiment. This figure is a figure corresponding to FIG. 10 (H), and is different in that the cover glass 96 has a laminated structure of the normal glass 110 and the colored glass 111 when compared with FIG. 10 (H).

  An insulating layer made of an adhesive 98 is formed on the bottom and side surfaces of the semiconductor substrate 91 on which the solid-state imaging element 92 is formed, and a back cover glass 99 is bonded to the bottom surface of the semiconductor substrate 91 by the adhesive 98. A barrier layer 100 is formed on the back cover glass 99.

  A lead wire 101 is formed on the layer of the adhesive 98 and the back cover glass 99. The lead wire 101 is a pad 94 on the surface of the semiconductor substrate 91 (in FIG. 3, the pad and its electrical extension are used as the pad 94. The pad 94 is formed on the surface of the semiconductor substrate 91, and the semiconductor substrate 91). 91 and the barrier layer 100 are electrically connected to each other. A passivation film 103 that is an insulating film is formed on the lead wire 101.

A laminated structure of normal glass 110 and colored glass 111 is bonded onto the semiconductor substrate 91 by an adhesive 95.
The normal glass 110 is a colorless and transparent glass. The colored glass 111 is a colored transparent glass having a function of shielding infrared rays. The light passes through the colored glass 111 and the normal glass 110 in this order, and enters the solid-state imaging device 92 of the semiconductor substrate 91. As is clear from the plan view of the next drawing (FIG. 4), the solid-state imaging element 92 does not appear in this cross-sectional view, but is shown by a dotted line for convenience of explanation.

  The colored glass 111 shields infrared rays of incident light. That is, the colored glass 111 has a function as an infrared cut filter. However, when light passes through the colored glass 111 (infrared cut filter), radiation may be emitted, for example, by an additive added to the colored glass 111. Usually, the glass 110 removes (absorbs) this radiation and prevents the radiation from entering the solid-state imaging device 92.

  In addition to the structure shown in FIG. 3, for example, a structure in which normal glass is further laminated on the outside of the colored glass 111 can be employed. This structure will be described later as a modified example. In addition, various structures in which the colored glass is not arranged at the innermost position can be adopted.

  Colored glass is fragile, and even if it emits a small amount of radiation, it is difficult to use it as a cover glass by itself. By bonding the normal glass 110 to the colored glass 111, in addition to the removal (absorption) of radiation, the colored glass can be physically reinforced and the laminated structure can be used as a cover glass.

  FIG. 4 is a schematic cross-sectional view showing a modification of the solid-state imaging device according to the first embodiment. In the solid-state imaging device according to the first embodiment, the cover glass 96 has a laminated structure of the normal glass 110 and the color glass 111. However, in the modified example, the color glass 111 is composed of two normal glasses 110a and A structure sandwiched by 110b is adopted.

By adopting such a structure, the strength can be increased. Further, it is possible to prevent the end of the colored glass 111 from being chipped in the dicing process at the time of manufacture.
FIG. 5 is a schematic plan view of the solid-state imaging device according to the first embodiment shown in FIG.

  A semiconductor wafer on which a plurality of solid-state imaging devices are formed is separated into individual solid-state imaging devices by cutting along a scribe line 106. The width of the scribe line 106 is, for example, 130 μm.

  When the solid-state imaging device is viewed in plan, a light receiving region (photodiode array region), a horizontal CCD unit 66 formed with a horizontal transfer channel, and an output unit 67 formed with an output amplifier are arranged at substantially the center thereof. .

  The Al wiring part 105 is formed, for example, so as to surround a light receiving area (photodiode array area) formed in a substantially rectangular shape along three sides where the horizontal CCD part 66 is not formed. The Al wiring portion 105 has left and right wiring end portions for lowering the resistance of polysilicon wiring (wired left and right in FIG. 5) for driving the vertical transfer electrodes in the light receiving region (photodiode array region). Is tied. Therefore, as many Al wirings as the number of vertical transfer electrode drive wirings are running. In the case of four-phase driving, in principle, four Al wirings are sufficient, but in practice, about ten are used to realize a thinning-out operation or the like.

  In the drawing, the semiconductor substrate 91 exists in a range surrounded by a dotted line. The width of the lead wire 101 is, for example, 150 μm, the distance between adjacent lead wires 101 is, for example, 200 μm, and the contact securing portion of the lead wire 101 is, for example, 50 μm with a margin in mind.

FIG. 6 is a schematic plan view showing one step of the method of manufacturing the solid-state imaging device according to the first embodiment.
The solid-state imaging device according to the first embodiment is manufactured by substantially the same method as the conventional CSP manufacturing method described with reference to FIGS. The difference is that in the conventional CSP manufacturing method, the cover glass 96 is adhered in the manufacturing process shown in FIG. 10B. In this embodiment, first, in the corresponding process, the color of the normal glass is different from that of the normal glass. The glass is bonded, and then the laminated structure is bonded onto the semiconductor substrate (wafer) with the colored glass facing up.

  As described above, since colored glass is fragile, it is extremely difficult to produce colored glass having a size that can cover the entire surface of a semiconductor substrate (wafer). On the other hand, for example, if a colored glass is bonded to each chip after the dicing process, the throughput is lowered. Therefore, after a plurality of colored glasses are bonded to normal glass, the laminated structure is placed on a semiconductor substrate (wafer) and bonded to prevent a decrease in throughput.

  FIG. 6 shows an example of the arrangement of colored glass bonded to normal glass on the semiconductor substrate 91 (wafer). Four of the colored glasses 111a to 111d are the same size, and both of the colored glasses 111e and 111f are colored glasses having a larger area and the same size.

  Large-area colored glasses 111e and 111f are arranged in a diameter region of a cylindrical semiconductor substrate 91 (wafer). In addition, small-area colored glasses 111a to 111d are arranged at positions away from the diameter region in the vertical direction.

  For example, in such an arrangement, a plurality of colored glasses bonded to normal glass are bonded to the semiconductor substrate 91 (wafer), thereby enabling processing at the wafer level and preventing a decrease in throughput.

  FIG. 7 is a schematic cross-sectional view showing the solid-state imaging device according to the second embodiment. In the first embodiment, the laminated structure of the normal glass 110 and the colored glass 111 is used as the cover glass. However, in the second embodiment, the normal glass 110c in which the metal vapor deposition film 109 is formed on one surface; A laminated structure with another normal glass 110d is used as the cover glass.

  The metal vapor-deposited film 109 is usually deposited on the glass 110c by using, for example, a CVD (chemical vapor deposition) method. The metal vapor deposition film 109 has a function of an infrared cut filter. Further, when the incident light is light having a wavelength of 600 nm to 700 nm, 50% or more of the light is transmitted.

  The normal glass 110c is disposed with the surface on which the metal vapor deposition film 109 is formed as the upper surface (so that the surface on which the metal vapor deposition film 109 is not formed faces the solid-state imaging device 92). This is because the metal vapor deposition film 109 is separated from the solid-state imaging device 92, for example, in the inspection performed using divergent light, the defect in the metal vapor deposition film 109 surface projected on the light receiving surface of the solid-state imaging device 92 is enlarged, and the defect is detected. This is to make it easier.

  The normal glass 110d is desirably bonded to the surface of the normal glass 109c on which the metal vapor deposition film 109 is formed. By laminating the normal glass 110d in this manner, when the metal vapor deposition film 109 has a defect such as peeling, it can be prevented from expanding. Further, dust or the like can be prevented from adhering to the metal vapor deposition film 109.

In the manufacturing process, as in the first embodiment, after two normal glasses 110c and 110d are bonded, the laminated structure is bonded onto a semiconductor substrate (wafer).
In the second embodiment, the metal vapor deposition film 109 formed on the glass surface was used as an infrared cut filter. In such a configuration, the light transmittance of the metal vapor-deposited film 109 (infrared cut filter) changes sharply with respect to the color spectrum (the spectral dependency of the light transmittance of the metal vapor-deposited film 109 (infrared cut filter)). It is sharp).

  In the second embodiment, the metal vapor-deposited film 109 is formed on the normal glass 110c to form an infrared cut filter, but an organic material film may be formed instead of the metal vapor-deposited film 109 and used as an infrared cut filter. it can. The organic material film is also formed so that when incident light is light having a wavelength of 600 nm to 700 nm, 50% or more of the light is transmitted.

FIG. 8 is a cross-sectional view illustrating a schematic configuration of an optical module assembled using the solid-state imaging device according to the embodiment.
The solid-state imaging device 120 as shown in the first or second embodiment is placed on and adhered to the surface of the support base 121. The lens barrel 114 is also brought into contact with and bonded to the support base 121. An imaging lens 115 that forms an image of a subject on the solid-state imaging device 120 is supported by the lens barrel 114.

  As described above, the solid-state imaging device 120 according to the embodiment includes the glass having the function of an infrared cut filter at the position of the cover glass. For this reason, it is not necessary to provide an infrared cut filter between the solid-state imaging device 120 and the imaging lens 115. Therefore, the optical module assembled using the solid-state imaging device 120 according to the embodiment is an optical module that can be miniaturized.

  As mentioned above, although this invention was demonstrated along the Example, this invention is not restrict | limited to these. For example, the n-type and p-type of the solid-state image sensor can be inverted. In the embodiment, the packaging of the two-dimensional solid-state imaging device has been described. However, the present invention can be applied to the packaging of a one-dimensional solid-state imaging device. It will be apparent to those skilled in the art that other various modifications, improvements, and combinations can be made.

  It can be suitably used for products that require downsizing, such as a digital camera built in a mobile phone.

(A) is a block diagram showing a schematic configuration of a main part of a solid-state imaging device incorporating a solid-state imaging device, and (B) and (C) are schematic diagrams showing the configuration of a CCD solid-state imaging device. It is a top view, (D) is a figure for demonstrating a MOS type solid-state image sensor. (A) is a schematic plan view showing a part of a light receiving portion of a CCD type solid-state imaging device, and (B) is a schematic cross-sectional view taken along line 2B-2B in (A). 1 is a schematic cross-sectional view showing a solid-state imaging device according to a first embodiment. It is a schematic sectional drawing which shows the modification of the solid-state imaging device by 1st Example. 2 is a schematic plan view of the solid-state imaging device according to the first embodiment as viewed from above the colored glass 111. FIG. It is a schematic top view which shows 1 process of the manufacturing method of the solid-state imaging device by a 1st Example. It is a schematic sectional drawing which shows the solid-state imaging device by 2nd Example. It is sectional drawing which shows schematic structure of the optical module assembled using the solid-state imaging device by an Example. It is a schematic sectional drawing which shows an example of a solid-state imaging device. (A)-(H) are schematic sectional drawings which show the manufacturing method of the other example (wafer level chip size package (chip size package (CSP))) of a solid-state imaging device. It is sectional drawing which shows schematic structure of the optical module assembled using the solid-state imaging device.

Explanation of symbols

51 Solid-State Imaging Device 52 Drive Signal Generating Device 53 Output Signal Processing Device 54 Recording Device 55 Display Device 56 Transmission Device 57 Television 62 Photosensitive Unit 64 Vertical CCD Unit 66 Horizontal CCD Unit 67 Output Unit 68 Photoelectric Conversion Element 69 MOS Transistor 71 Photodiode 73 Vertical transfer channel 74 Read portion 75a First layer vertical transfer electrode 75b Second layer vertical transfer electrode 79 Light shielding film 79a Opening (light introduction portion)
81 Semiconductor substrate 82 Well layer 84 Color filter layer 84r R portion 84g G portion 84b B portion 85 Micro lens 86 Package 87 Cover glass 88 Wire 89 Semiconductor substrate 90a Inner lead 90b Outer lead 91 Semiconductor substrate 92 Solid-state image sensor 93 Passivation film 94 Pad 95 Adhesive 96 Cover glass 97a, b Notch (half-cut hole)
98 Adhesive 99 Back cover glass 100 Barrier layer 101 Lead wire 102 T contact 103 Passivation film 104 Solder ball 105 Al wiring part 106 Scribe line 109 Metal vapor deposition film 110, 110a-d Normal glass 111, 111a-f Color glass 112 Support substrate 113 Solid-state imaging device 114 Lens barrel 115 Imaging lens 116 Infrared cut filter 117 Signal processing element 118 Drive IC
120 Solid-state imaging device 121 Support stand

Claims (1)

(A) forming a plurality of solid-state imaging elements on a semiconductor substrate;
(B) forming an insulating film and a pad on the semiconductor substrate on the side where the solid-state imaging element is formed;
(C) bonding a cover glass having a laminated structure in which a colored glass is laminated on a colorless transparent glass on the insulating film and the pad so that the colorless transparent glass is disposed on the semiconductor substrate side;
(D) forming a first notch in the semiconductor substrate between the adjacent solid-state image sensors from the side where the solid-state image sensor is not formed;
(E) bonding a back cover glass on the semiconductor substrate on the side where the solid-state imaging device is not formed;
(F) forming a barrier layer on the back cover glass;
From (g) the rear cover glass side, wherein the rear cover glass between adjacent solid-state imaging device, the insulating film, and the pad, and forming a second notch,
(H) forming a lead wire drawn from the second notch surface to the back cover glass surface and electrically connected to the pad and the barrier layer;
(I) forming an insulating film so as to cover the lead wire;
(J) dicing the cover glass at the position of the second notch , and separating each of the semiconductor substrates on which the individual solid-state imaging devices are formed,
The semiconductor substrate is a semiconductor wafer having a circular shape, and the colored glass contained in the cover glass is composed of a plurality of colored glasses,
In the step (c), a colored glass having a relatively large area in a region defined on the diameter of the semiconductor substrate, and a colored glass having a relatively small area in a region not defined on the diameter. A method of manufacturing a solid-state imaging device in which the cover glass is adhered so that the cover glass is disposed.

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