CN114573239A - Thinning method of CIS glass cover - Google Patents
Thinning method of CIS glass cover Download PDFInfo
- Publication number
- CN114573239A CN114573239A CN202210168385.7A CN202210168385A CN114573239A CN 114573239 A CN114573239 A CN 114573239A CN 202210168385 A CN202210168385 A CN 202210168385A CN 114573239 A CN114573239 A CN 114573239A
- Authority
- CN
- China
- Prior art keywords
- cis
- glass cover
- glass
- carrier plate
- ultrathin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 4
- 239000011737 fluorine Substances 0.000 claims abstract description 4
- 238000012858 packaging process Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000002390 adhesive tape Substances 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of CIS wafer processing, in particular to a method for thinning a CIS glass cover, wherein S1, a glass carrier plate is bonded on one side of the CIS glass cover through an adhesive, the CIS glass cover and the glass carrier plate are protected through etching protective glue, and the side to be thinned of the CIS glass cover is exposed; s2, etching the CIS glass cover by the fluorine-containing plasma to thin the CIS glass cover and removing the etching protective glue to obtain an ultrathin CIS glass cover; s3, performing CV process on the surface of the ultrathin CIS glass cover; s4, bonding the front side of the CIS wafer and thinning the back side of the CIS wafer after the CV process is completed, and completing a normal packaging process; and S5, debonding the ultrathin CIS glass cover and the glass carrier plate, and removing the glass carrier plate. The ultrathin glass and the glass carrier plate can be temporarily attached in the working process, the purpose of overall protection is achieved, the use of an adhesive tape for protection is avoided, and meanwhile, the ultrathin glass can be effectively prevented from being bent in the manufacturing process, and waste is avoided.
Description
Technical Field
The invention relates to the field of CIS wafer processing, in particular to a method for thinning a CIS glass cover.
Background
Microelectronic imaging elements are widely used in mobile devices, wherein an image sensor, which is a semiconductor device that converts an optical image into an electrical signal, is an important component of the microelectronic imaging elements, and is generally classified into a Charge Coupled Device (CCD) and a complementary metal oxide semiconductor image sensing chip (CMOS image sensing chip, CIS).
The CIS chip utilizes a control circuit and a signal processing circuit positioned around the MOS transistors and adopts the switching technology of the MOS transistors to sequentially detect output, the number of the MOS transistors is equal to the number of pixels, namely, light is irradiated to a photosensitive area on the chip through a surface glass cover plate and a light-transmitting glue, and the conversion from a light signal to an electric signal is completed, so that the imaging principle is realized. The CIS chip can overcome the defects of complex manufacturing process and high energy consumption of the CCD chip, and a pixel unit array and a peripheral circuit can be integrated on the same chip by adopting the CIS chip manufacturing technology, so that the CIS chip has the advantages of small volume, light weight, low power consumption, convenience in programming, easiness in control and low cost.
In order to meet the ultra-thin requirement of mobile devices, the glass cover for CIS has been slowly made to be 200um and 100um from the traditional 400um and 500 um. However, the CIS glass cover is easily warped after being thinned and cannot be bonded to the Wafer (see fig. 2), and when the glass is warped, the CIS glass cover cannot be used for bonding, which causes a lot of waste.
Disclosure of Invention
In order to solve the above-mentioned disadvantages in the background art, the present invention is directed to a method for thinning a CIS glass cover.
The purpose of the invention can be realized by the following technical scheme:
a method for thinning a CIS glass cover comprises the following steps:
s1, bonding a glass carrier plate on one side of the CIS glass cover through an adhesive, and protecting the CIS glass cover and the glass carrier plate through etching protective glue to expose the side to be thinned of the CIS glass cover;
s2, etching the CIS glass cover by the fluorine-containing plasma to thin the CIS glass cover and removing the etching protective glue to obtain an ultrathin CIS glass cover;
s3, performing CV process on the surface of the ultrathin CIS glass cover;
s4, bonding the front side of the CIS wafer and thinning the back side of the CIS wafer after the CV process is completed to complete the normal packaging process;
and S5, debonding the ultrathin CIS glass cover and the glass carrier plate, and removing the glass carrier plate.
Furthermore, the thickness of the ultrathin CIS glass cover in S2 is 100-200 μm, and the thickness of the glass carrying plate is 400-800 μm.
Further, in S4, the CIS wafer has completed all front side processes before bonding.
Further, the front surface process in S4 includes: the CIS element front end processes include front side integrated circuit device, image sensor, front side interconnect structure, ILD, IMD, passivation layer, TSV, insulation layer, RDL, TSV pad, polymer layer, color filter, microlens and protective layer processes.
Further, in the method of debonding in S5, the laser penetrates through the glass carrier to decompose the adhesion between the glass carrier and the adhesive, the glass carrier is removed, and the adhesive layer is cleaned to remove the adhesive layer.
The invention has the beneficial effects that:
the CIS glass cover and the glass carrier plate can be temporarily bonded in the working process, so that the purpose of overall protection is achieved, the use of an adhesive tape for protection is avoided, and meanwhile, the CIS glass cover can be effectively prevented from being bent in the manufacturing process, and waste is avoided.
Drawings
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without creative efforts;
FIG. 1 is a schematic view of the overall flow of the thinning method of the present invention;
FIG. 2 is a schematic diagram showing the occurrence of warpage after thinning of a CIS glass cover in the CIS wafer processing process.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A method for thinning a CIS glass cover comprises the following steps:
s1, bonding a glass carrier plate on one side of the CIS glass cover through an adhesive, and protecting the CIS glass cover and the glass carrier plate through etching protective glue to expose the side to be thinned of the CIS glass cover;
s2, etching the CIS glass cover by fluorine-containing plasma to thin the CIS glass cover and removing the etching protective glue to obtain the ultrathin CIS glass cover, wherein the thickness of the ultrathin CIS glass cover is 100-200 μm, and the thickness of the glass carrying plate is 400-800 μm;
s3, performing CV process on the surface of the ultrathin CIS glass cover;
CV is the abbreviation of cavity wall, a latticed mask bump is formed on the surface of the thinned CIS glass cover through developing, exposing and etching after coating a photoresist, and the protrusion is the photoresist;
s4, bonding the front side of the CIS wafer and thinning the back side of the CIS wafer after the CV process is completed to complete a normal packaging process, wherein the CIS wafer completes all front side processes before bonding;
the front process comprises the following steps: the CIS element front-end process comprises front-side integrated circuit device, image sensor, front-side interconnection structure, ILD, IMD, passivation layer, TSV, insulating layer, RDL, TSV pad, polymer layer, color filter, micro lens and protective layer processes;
s5, bonding the ultrathin CIS glass cover and the glass carrier plate in a debonding mode, and removing the glass carrier plate:
the bonding-releasing method adopts laser to penetrate the glass carrier plate to enable the releasing agent to decompose the viscosity between the glass carrier plate and the adhesive, remove the glass carrier plate and clean and remove the adhesive layer.
As shown in fig. 2, the ultra-thin CIS glass cover warps when no glass carrier is bonded during operation, and cannot be used for bonding, which causes waste.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (5)
1. A method for thinning a CIS glass cover is characterized by comprising the following steps:
s1, bonding a glass carrier plate on one side of the CIS glass cover through an adhesive, and protecting the CIS glass cover and the glass carrier plate through etching protective glue to expose the side to be thinned of the CIS glass cover;
s2, etching the CIS glass cover by the fluorine-containing plasma to thin the CIS glass cover and removing the etching protective glue to obtain an ultrathin CIS glass cover;
s3, performing CV process on the surface of the ultrathin CIS glass cover;
s4, bonding the front side of the CIS wafer and thinning the back side of the CIS wafer after the CV process is completed to complete the normal packaging process;
and S5, debonding the ultrathin CIS glass cover and the glass carrier plate, and removing the glass carrier plate.
2. The method as claimed in claim 1, wherein the thickness of the ultrathin glass in S2 is 200 μm and the thickness of the glass carrier plate is 400 μm to 800 μm.
3. The method of claim 1, wherein the CIS wafer has completed all front side processes before bonding in S4.
4. The method of claim 3, wherein the front-side process in S4 comprises: the CIS device front end processes include front side integrated circuit device, image sensor, front side interconnect, ILD, IMD, passivation layer, TSV, insulation layer, RDL, TSV pad, polymer layer, color filter, microlens and protective layer processes.
5. The method of claim 1, wherein the debonding in S5 is performed by penetrating the glass carrier with a laser to decompose the adhesion between the glass carrier and the adhesive, removing the glass carrier, and cleaning to remove the adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210168385.7A CN114573239A (en) | 2022-02-23 | 2022-02-23 | Thinning method of CIS glass cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210168385.7A CN114573239A (en) | 2022-02-23 | 2022-02-23 | Thinning method of CIS glass cover |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114573239A true CN114573239A (en) | 2022-06-03 |
Family
ID=81775020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210168385.7A Pending CN114573239A (en) | 2022-02-23 | 2022-02-23 | Thinning method of CIS glass cover |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114573239A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100105160A1 (en) * | 2007-06-08 | 2010-04-29 | Harpuneet Singh | Techniques for Glass Attachment in an Image Sensor Package |
| CN101807528A (en) * | 2008-12-24 | 2010-08-18 | 弗莱克斯电子有限责任公司 | Techniques for glass attachment in the image sensor package |
| CN107958881A (en) * | 2017-11-28 | 2018-04-24 | 华进半导体封装先导技术研发中心有限公司 | A kind of CIS device encapsulation structures and method for packing |
| US20180366445A1 (en) * | 2017-06-14 | 2018-12-20 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
| CN111524849A (en) * | 2019-02-02 | 2020-08-11 | 中芯集成电路（宁波）有限公司 | Semiconductor structure and manufacturing method thereof |
-
2022
- 2022-02-23 CN CN202210168385.7A patent/CN114573239A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100105160A1 (en) * | 2007-06-08 | 2010-04-29 | Harpuneet Singh | Techniques for Glass Attachment in an Image Sensor Package |
| CN101807528A (en) * | 2008-12-24 | 2010-08-18 | 弗莱克斯电子有限责任公司 | Techniques for glass attachment in the image sensor package |
| US20180366445A1 (en) * | 2017-06-14 | 2018-12-20 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
| CN107958881A (en) * | 2017-11-28 | 2018-04-24 | 华进半导体封装先导技术研发中心有限公司 | A kind of CIS device encapsulation structures and method for packing |
| CN111524849A (en) * | 2019-02-02 | 2020-08-11 | 中芯集成电路（宁波）有限公司 | Semiconductor structure and manufacturing method thereof |
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