CN103996659A - Image sensor glass cavity wall manufacturing method - Google Patents
Image sensor glass cavity wall manufacturing method Download PDFInfo
- Publication number
- CN103996659A CN103996659A CN201410206937.4A CN201410206937A CN103996659A CN 103996659 A CN103996659 A CN 103996659A CN 201410206937 A CN201410206937 A CN 201410206937A CN 103996659 A CN103996659 A CN 103996659A
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- Prior art keywords
- glass
- imageing sensor
- square
- square plate
- glass substrate
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- 239000011521 glass Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000011230 binding agent Substances 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 208000002925 dental caries Diseases 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000002245 particle Substances 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The invention relates to an image sensor glass cavity wall manufacturing method. The method is characterized by comprising the steps that (1) an ultra-thin square glass tube is manufactured, wherein the wall thickness of the square glass tube ranges from 50 microns to 300 microns, and the section size of the square glass tube is matched with the size of patterns on an image sensor wafer; (2) the glass tube is cut into a plurality of square pieces, wherein the thickness of each square piece ranges from 50 microns to 200 microns; (3) one surfaces of the square pieces are pressed and bound to a glass substrate through a binder, and a plurality of square cavities corresponding to the patterns on the image sensor wafer in a one-to-one mode are formed; (4) the other surfaces of the square pieces are coated with the binder; the face, bound with the square pieces, of the glass substrate is in bonding with the face, with the patterns, of the image sensor wafer, and therefore a glass cavity wall is formed on an image sensor. The problems that in a traditional method, the photoresist forming bonding technology is adopted, the manufacturing cost is high, and the yield is low are solved.
Description
Technical field
The manufacture method that the present invention relates to a kind of imageing sensor glass chamber wall, belongs to microelectronic packaging technology field.
Background technology
In the wafer-level packaging technique of imageing sensor, the particle contamination of imageing sensor can make module lose efficacy.For high resolution device, the loss of yield diminishes with Pixel Dimensions and increases.For example, in 3,000,000 element sensors, Pixel Dimensions is less than 2 microns, is greater than a pixel if a particle blocks, and this imageing sensor lost efficacy.In order to limit the amounts of particles of this size, during module assembled technique, need strict particle control measure, to avoid yield loss.But these particle control measure will increase production cost.
Before wafer cutting and device installation, use the working region of glassy layer protection transducer to avoid polluting, can improve yield.Because the particle that is arranged on glass/lens end face can be separated by the thickness of glassy layer (be generally 0.3 to 0.4mm) and transducer, so before causing image deterioration, maximum is permitted to hold particle size can reach 25 microns of diameters.Therefore,, by using methods for wafer-level packaging, can significantly improve the yield of camera model packaging technology.
The manufacture method that is applied at present the photoresistance wall photomask in imageing sensor is by glass wafer spin coating photoresist, by the exposure imaging light-resistance wall structure that formation rule is arranged on photoresist.The subject matter that makes to make with photoresist light-resistance wall structure is that the rigidity of photoresist material own is little, thermal coefficient of expansion is large, water absorption is strong; in follow-up baking process and reliability testing, often can there is light-resistance wall layering or from the phenomenon coming off on glass, have a strong impact on product quality and useful life.Residue after exposure imaging also easily causes the integrity problem of transducer simultaneously.
The patent No. is that the encapsulating structure utilization shown in CN101488476A is scheduled to make specific structure on substrate in addition, then completes encapsulation by the technique of bonding and makes.But its shortcoming is to customize on substrate the processing cost costliness of technique.Due to the multiple unfavorable factor of monolithic traditional manufacturing technique method, to final finished rate and the reliability of product, and go out commodity price and all cause great impact.Various new processes are also progressively suggested and discuss.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, the manufacture method of a kind of imageing sensor glass chamber wall is provided, can avoid conventional method to use photoresistance moulding bonding technology, cost of manufacture costliness and the low inferior problem of yield.
According to technical scheme provided by the invention, the manufacture method of described imageing sensor glass chamber wall, is characterized in that, comprises the following steps:
(1) make ultra-thin square glass pipe, the wall thickness of square glass pipe is 50～300 μ m, and on the sectional dimension of square glass pipe and imageing sensor wafer, the size of pattern matches;
(2) glass tube is cut into several square plate, the thickness of square plate is 50～200 μ m;
(3) surface of several square plate is pressed on glass substrate to pattern some grid cavitys one to one on formation and imageing sensor wafer by binding agent;
(4) at another surface-coated binding agent of square plate; On the one side that glass substrate is bonded with to square plate and imageing sensor wafer, the figuratum one side of tool is carried out bonding, thereby on imageing sensor, forms glass chamber wall.
After described step (3) pressing, also comprise curing process, the temperature of curing process is 50～150 DEG C, and the time is 10～30min.
After described step (4) bonding, also comprise curing process, the temperature of curing process is 50～150 DEG C, and the time is 5～20min.
In described step (4), the thickness of binding agent is 2～30 μ m.
The thickness of described glass substrate is 100～500 μ m.
Adopt in described step (3), square plate one surface dips binding agent, square plate one surface-coated binding agent or at glass substrate surface coated with adhesive, then square plate is pressed on glass substrate.
In the time of described glass substrate surface coated with adhesive, the position in adhesive coated region with square plate the pressing region on glass substrate corresponding, the shape of the shape in adhesive coated region, size and square plate, in the same size.
Advantage of the present invention is: adopt the method for cutting ultra thin square glass pipe to realize the making of ultra-thin glass chamber wall, and by by the technique of square plate, glass substrate and imageing sensor wafer bonding, realize the encapsulation of imageing sensor and make.Avoid conventional method to use photoresistance moulding bonding technology, cost of manufacture costliness and the low inferior problem of yield.
Brief description of the drawings
Fig. 1 is the schematic diagram of square glass pipe of the present invention.
Fig. 2 is the schematic diagram of the glass substrate of bonding square plate.
Fig. 3 is the end view of glass substrate.
Fig. 4 is the schematic diagram of glass substrate and imageing sensor wafer bonding.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment mono-: the manufacture method of a kind of imageing sensor glass chamber wall, comprises the following steps:
(1) make ultra-thin square glass pipe, as shown in Figure 1, the wall thickness of square glass pipe is 50 μ m, and on the sectional dimension of square glass pipe and imageing sensor wafer, the size of pattern matches;
(2) glass tube is adopted the mode of diamond wire, diamond blade or laser cut into single square plate, the thickness of square plate is 50 μ m;
(3) as shown in Figure 2, binding agent 4 is dipped in in a surface of several square plate 2, and press on glass substrate 1, pattern some grid cavitys one to one on formation and imageing sensor wafer, the thickness of glass substrate is 100 μ m; After pressing, carry out curing process, the temperature of curing process is 50 DEG C, and the time is 30min;
(4) as shown in Figure 3, at square plate 2 another surface-coated binding agents 3, coating method can adopt the mode of dipping in glue or plastic roll, and the thickness of binding agent 3 is 2 μ m;
(5) as shown in Figure 4, the one side that glass substrate is bonded with to square plate is carried out bonding with the figuratum one side of imageing sensor wafer 5 tool, thereby on imageing sensor, forms glass chamber wall; Bonding can be by the mode of hot pressing or normal temperature pressing; After bonding, carry out curing process, the temperature of curing process is 50 DEG C, and the time is 20min.
Embodiment bis-: the manufacture method of a kind of imageing sensor glass chamber wall, comprises the following steps:
(1) make ultra-thin square glass pipe, as shown in Figure 1, the wall thickness of square glass pipe is 300 μ m, and on the sectional dimension of square glass pipe and imageing sensor wafer, the size of pattern matches;
(2) glass tube is adopted the mode of diamond wire, diamond blade or laser cut into single square plate, the thickness of square plate is 200 μ m;
(3) as shown in Figure 2, by a surface-coated binding agent 4 of several square plate 2, and press on glass substrate 1, pattern some grid cavitys one to one on formation and imageing sensor wafer, the thickness of glass substrate is 500 μ m; After pressing, carry out curing process, the temperature of curing process is 150 DEG C, and the time is 10min;
(4) as shown in Figure 3, at square plate 2 another surface-coated binding agents 3, coating method can adopt the mode of dipping in glue or plastic roll, and the thickness of binding agent 3 is 30 μ m;
(5) as shown in Figure 4, on the one side that glass substrate is bonded with to square plate and imageing sensor wafer 5, the figuratum one side of tool is carried out bonding, thereby on imageing sensor, forms glass chamber wall; Bonding can be by the mode of hot pressing or normal temperature pressing; After bonding, carry out curing process, the temperature of curing process is 150 DEG C, and the time is 5min.
Embodiment tri-: the manufacture method of a kind of imageing sensor glass chamber wall, comprises the following steps:
(1) make ultra-thin square glass pipe, as shown in Figure 1, the wall thickness of square glass pipe is 100 μ m, and on the sectional dimension of square glass pipe and imageing sensor wafer, the size of pattern matches;
(2) glass tube is adopted the mode of diamond wire, diamond blade or laser cut into single square plate, the thickness of square plate is 100 μ m;
(3) as shown in Figure 2, at glass substrate surface coated with adhesive 4, the position in adhesive coated region with square plate the pressing region on glass substrate corresponding, the shape of the shape in adhesive coated region, size and square plate, in the same size; Again square plate is pressed on glass substrate 1, pattern some grid cavitys one to one on formation and imageing sensor wafer, the thickness of glass substrate is 200 μ m; After pressing, carry out curing process, the temperature of curing process is 100 DEG C, and the time is 20min;
(4) as shown in Figure 3, at square plate 2 another surface-coated binding agents 3, coating method can adopt the mode of dipping in glue or plastic roll, and the thickness of binding agent 3 is 10 μ m;
(5) as shown in Figure 4, on the one side that glass substrate is bonded with to square plate and imageing sensor wafer 5, the figuratum one side of tool is carried out bonding, thereby on imageing sensor, forms glass chamber wall; Bonding can be by the mode of hot pressing or normal temperature pressing; After bonding, carry out curing process, the temperature of curing process is 100 DEG C, and the time is 10min.
The present invention adopts the method for cutting ultra thin square glass pipe to realize the making of ultra-thin glass chamber wall, and by by the technique of square plate, glass substrate and imageing sensor wafer bonding, realizes the encapsulation of imageing sensor and make.The present invention can avoid conventional method to use photoresistance moulding bonding technology, cost of manufacture costliness and the low inferior problem of yield.
Claims (7)
1. a manufacture method for imageing sensor glass chamber wall, is characterized in that, comprises the following steps:
(1) make ultra-thin square glass pipe, the wall thickness of square glass pipe is 50～300 μ m, and on the sectional dimension of square glass pipe and imageing sensor wafer, the size of pattern matches;
(2) glass tube is cut into several square plate, the thickness of square plate is 50～200 μ m;
(3) surface of several square plate is pressed on glass substrate to pattern some grid cavitys one to one on formation and imageing sensor wafer by binding agent;
(4) at another surface-coated binding agent of square plate; On the one side that glass substrate is bonded with to square plate and imageing sensor wafer, the figuratum one side of tool is carried out bonding, thereby on imageing sensor, forms glass chamber wall.
2. the manufacture method of imageing sensor glass as claimed in claim 1 chamber wall, is characterized in that: after described step (3) pressing, also comprise curing process, the temperature of curing process is 50～150 DEG C, and the time is 10～30min.
3. the manufacture method of imageing sensor glass as claimed in claim 1 chamber wall, is characterized in that: after described step (4) bonding, also comprise curing process, the temperature of curing process is 50～150 DEG C, and the time is 5～20min.
4. the manufacture method of imageing sensor glass as claimed in claim 1 chamber wall, is characterized in that: in described step (4), the thickness of binding agent is 2～30 μ m.
5. the manufacture method of imageing sensor glass as claimed in claim 1 chamber wall, is characterized in that: the thickness of described glass substrate is 100～500 μ m.
6. the manufacture method of imageing sensor glass as claimed in claim 1 chamber wall, it is characterized in that: in described step (3), adopt, square plate one surface dips binding agent, square plate one surface-coated binding agent or at glass substrate surface coated with adhesive, then square plate is pressed on glass substrate.
7. the manufacture method of imageing sensor glass as claimed in claim 6 chamber wall, it is characterized in that: in the time of described glass substrate surface coated with adhesive, the position in adhesive coated region with square plate the pressing region on glass substrate corresponding, the shape of the shape in adhesive coated region, size and square plate, in the same size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410206937.4A CN103996659A (en) | 2014-05-15 | 2014-05-15 | Image sensor glass cavity wall manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410206937.4A CN103996659A (en) | 2014-05-15 | 2014-05-15 | Image sensor glass cavity wall manufacturing method |
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| Publication Number | Publication Date |
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| CN103996659A true CN103996659A (en) | 2014-08-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410206937.4A Pending CN103996659A (en) | 2014-05-15 | 2014-05-15 | Image sensor glass cavity wall manufacturing method |
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| Country | Link |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090206349A1 (en) * | 2006-08-25 | 2009-08-20 | Hiroshi Yamada | Semiconductor device and method of manufacturing the same |
| CN101807528A (en) * | 2008-12-24 | 2010-08-18 | 弗莱克斯电子有限责任公司 | Techniques for glass attachment in the image sensor package |
| KR20110077416A (en) * | 2009-12-30 | 2011-07-07 | 주식회사 동부하이텍 | Image sensor and method for manufacturing the same |
| CN102412256A (en) * | 2011-10-28 | 2012-04-11 | 格科微电子（上海）有限公司 | Packaged image sensor, formation method thereof and method for reducing flare phenomenon of packaged image sensor |
| CN203103305U (en) * | 2013-02-28 | 2013-07-31 | 格科微电子（上海）有限公司 | Packaging structure of mixed substrate and semiconductor device |
-
2014
- 2014-05-15 CN CN201410206937.4A patent/CN103996659A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090206349A1 (en) * | 2006-08-25 | 2009-08-20 | Hiroshi Yamada | Semiconductor device and method of manufacturing the same |
| CN101807528A (en) * | 2008-12-24 | 2010-08-18 | 弗莱克斯电子有限责任公司 | Techniques for glass attachment in the image sensor package |
| KR20110077416A (en) * | 2009-12-30 | 2011-07-07 | 주식회사 동부하이텍 | Image sensor and method for manufacturing the same |
| CN102412256A (en) * | 2011-10-28 | 2012-04-11 | 格科微电子（上海）有限公司 | Packaged image sensor, formation method thereof and method for reducing flare phenomenon of packaged image sensor |
| CN203103305U (en) * | 2013-02-28 | 2013-07-31 | 格科微电子（上海）有限公司 | Packaging structure of mixed substrate and semiconductor device |
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Application publication date: 20140820 |