JP5567096B2 - 太陽電池及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 221
- 229910052710 silicon Inorganic materials 0.000 claims description 221
- 239000010703 silicon Substances 0.000 claims description 221
- 239000000758 substrate Substances 0.000 claims description 156
- 239000002086 nanomaterial Substances 0.000 claims description 109
- 239000010410 layer Substances 0.000 description 175
- 238000005530 etching Methods 0.000 description 35
- 239000007789 gas Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000002238 carbon nanotube film Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
図1を参照すると、本発明の実施例1は、太陽電池10を提供する。該太陽電池10は、順次的に積層された背面電極100と、シリコン基板110と、ドープシリコン層120及び前面電極130と、を含む。太陽光は、前記太陽電池10の前記前面電極130側から入射する。前記シリコン基板110は、第一表面112及び該第一表面112に対向する第二表面114を含む。前記背面電極100は、前記シリコン基板110の前記第一表面112に設置され、該第一表面112とオーミック接触する。前記シリコン基板110の前記第二表面114には、複数の三次元ナノ構造体113が形成されている。前記シリコン基板110の前記第二表面114は、複数の三次元ナノ構造体113の表面及び隣接する前記三次元ナノ構造体113の間の面を含むパターン化された表面を示す。各々の前記三次元ナノ構造体113はM型構造体である。また、前記ドープシリコン層120は、前記シリコン基板110の前記第二表面114に形成される。前記前面電極130は、前記ドープシリコン層120の少なくとも一部の表面と接触するように配置される。
P=λ+λ0 (1)
図7を参照すると、実施例2は、太陽電池20を提供する。該太陽電池20は、順次に積層された背面電極100と、シリコン基板110と、ドープシリコン層120と、前面電極130と、ナノ金属層140と、を含む。前記シリコン基板110には、複数の三次元ナノ構造体113が形成されている。前記太陽電池20は、実施例1の太陽電池10と比べて、次の異なる点がある。前記太陽電池20は、更にナノ金属層140を含み、該ナノ金属層140は、前記ドープシリコン層120と前面電極130との間に設置され、前記ドープシリコン層120の前面電極130と隣接する表面に被覆される。前記ナノ金属層140は、複数の金属ナノ粒子が展開する単層構造体又は多層構造体である。前記ナノ金属層140の厚さは2nm〜200nmであるが、好ましくは50nmである。前記ナノ金属層140は、金、銀、銅、鉄及びアルミニウムなどのいずれか一種からなる。この場合、前記前面電極130は、前記ナノ金属層140に部分的に接触する、又は完全に接触する。前記前面電極130が、前記ナノ金属層140に部分的に接触する場合、前記前面電極130の一部は、前記複数の三次元ナノ構造体113によって、隣接する三次元ナノ構造体113の間に懸架され、別の一部は前記複数の三次元ナノ構造体113上の前記ナノ金属層140と接触する。前記前面電極130の全ての表面が前記ナノ金属層140に被覆される場合、前記前面電極130は、前記ナノ金属層140に完全に接触する。
100 背面電極
103 マスク層
110 シリコン基板
112 第一表面
113 三次元ナノ構造体
114 第二表面
120 ドープシリコン層
130 前面電極
140 ナノ金属層
1031 突部構造
1032 第一マスク層
1033 溝
1034 第二マスク層
1101 シリコン基板
1131 三次元ナノ構造体予備成形物
1132 第一突部
1134 第二突部
1136 第一溝
1138 第二溝
1132a、1134a、 第一面
1132b、1134b、 第二面
200 金型
Claims (2)
- 背面電極と、シリコン基板と、ドープシリコン層と、前面電極と、を含む太陽電池であって、
前記シリコン基板は、第一表面及び該第一表面に対向する第二表面を含み、前記シリコン基板の前記第二表面には、複数の連続した三次元ナノ構造体が形成され、
前記背面電極は、前記シリコン基板の第一表面に設置され、該第一表面とオーミック接触し、
前記ドープシリコン層は、前記シリコン基板の第二表面に形成され、
前記前面電極は、前記ドープシリコン層の少なくとも一部に形成され、
前記三次元ナノ構造体は、ストリップ状の第一突部とストリップ状の第二突部を含み、前記第一突部及び前記第二突部は前記シリコン基板の一端から対向する他端までそれぞれ延在し、前記第一突部と前記第二突部とは接触して並列し、隣接する前記第一突部と前記第二突部との間には、第一溝が形成され、隣接する前記三次元ナノ構造体の間には、第二溝が形成され、前記第二溝の深度は第一溝より深い三次元ナノ構造体であることを特徴とする太陽電池。 - 対向する第一表面及び第二表面を含むシリコン基板を形成する第一ステップと、
前記シリコン基板の第二表面に複数の連続した三次元ナノ構造体を形成する第二ステップと、
前記シリコン基板の第二表面にドープシリコン層を形成する第三ステップと、
前記ドープシリコン層の少なくとも一部に前面電極を形成する第四ステップと、
前記シリコン基板の第一表面に背面電極を形成し、前記背面電極を前記シリコン基板の第一表面とオーミック接触させる第五ステップと、を含み、
前記三次元ナノ構造体は、ストリップ状の第一突部とストリップ状の第二突部を含み、前記第一突部及び前記第二突部は前記シリコン基板の一端から対向する他端までそれぞれ延在し、前記第一突部と前記第二突部とは接触して並列し、隣接する前記第一突部と前記第二突部との間には、第一溝が形成され、隣接する前記三次元ナノ構造体の間には、第二溝が形成され、前記第二溝の深度は第一溝より深い三次元ナノ構造体であることを特徴とする太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110331456.2A CN103094374B (zh) | 2011-10-27 | 2011-10-27 | 太阳能电池 |
CN201110331456.2 | 2011-10-27 |
Publications (2)
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JP2013098547A JP2013098547A (ja) | 2013-05-20 |
JP5567096B2 true JP5567096B2 (ja) | 2014-08-06 |
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Country Status (4)
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US (1) | US9343598B2 (ja) |
JP (1) | JP5567096B2 (ja) |
CN (1) | CN103094374B (ja) |
TW (1) | TWI452706B (ja) |
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DE112012006015T5 (de) * | 2012-03-12 | 2014-12-11 | Mitsubishi Electric Corporation | Herstellungsverfahren für Solarzelle |
CN103367477A (zh) * | 2012-03-30 | 2013-10-23 | 清华大学 | 太阳能电池 |
JP5824618B2 (ja) * | 2013-03-01 | 2015-11-25 | パナソニックIpマネジメント株式会社 | シリコン基板 |
CN103730525B (zh) * | 2014-01-21 | 2016-03-30 | 南通大学 | 一种同心圆型波纹式太阳能电池硅基片及其制造工艺 |
CN107039538B (zh) * | 2017-01-17 | 2019-07-16 | 苏州瑞而美光电科技有限公司 | 一种高光电转换效率太阳能电池及其制备方法 |
EP3667738A1 (en) * | 2018-12-12 | 2020-06-17 | BASF Coatings GmbH | Photovoltaic module |
TWI792295B (zh) * | 2021-05-04 | 2023-02-11 | 合晶科技股份有限公司 | 半導體基板及其製造方法 |
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JPH04209576A (ja) * | 1990-12-07 | 1992-07-30 | Kanegafuchi Chem Ind Co Ltd | 光電変換素子 |
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US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
JP2005175197A (ja) * | 2003-12-11 | 2005-06-30 | Canon Inc | 太陽電池モジュール及びその製造方法 |
JP4393938B2 (ja) * | 2004-07-16 | 2010-01-06 | 信越化学工業株式会社 | 電極材料及び太陽電池、並びに太陽電池の製造方法 |
US8866007B2 (en) * | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
US20080105299A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same |
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CN101552295A (zh) | 2008-04-03 | 2009-10-07 | 清华大学 | 太阳能电池 |
CN101527327B (zh) * | 2008-03-07 | 2012-09-19 | 清华大学 | 太阳能电池 |
TWI382551B (zh) * | 2008-11-06 | 2013-01-11 | Ind Tech Res Inst | 太陽能集光模組 |
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US9070803B2 (en) * | 2010-05-11 | 2015-06-30 | Molecular Imprints, Inc. | Nanostructured solar cell |
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2011
- 2011-10-27 CN CN201110331456.2A patent/CN103094374B/zh active Active
- 2011-10-31 TW TW100139676A patent/TWI452706B/zh active
- 2011-12-29 US US13/340,651 patent/US9343598B2/en active Active
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2012
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Also Published As
Publication number | Publication date |
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CN103094374A (zh) | 2013-05-08 |
US20130104967A1 (en) | 2013-05-02 |
JP2013098547A (ja) | 2013-05-20 |
US9343598B2 (en) | 2016-05-17 |
TW201318188A (zh) | 2013-05-01 |
TWI452706B (zh) | 2014-09-11 |
CN103094374B (zh) | 2016-03-09 |
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