JP5562603B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5562603B2
JP5562603B2 JP2009220024A JP2009220024A JP5562603B2 JP 5562603 B2 JP5562603 B2 JP 5562603B2 JP 2009220024 A JP2009220024 A JP 2009220024A JP 2009220024 A JP2009220024 A JP 2009220024A JP 5562603 B2 JP5562603 B2 JP 5562603B2
Authority
JP
Japan
Prior art keywords
tft
semiconductor layer
layer
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009220024A
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English (en)
Japanese (ja)
Other versions
JP2010109341A5 (enExample
JP2010109341A (ja
Inventor
舜平 山崎
剛 長多
秀和 宮入
安弘 神保
絵里香 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009220024A priority Critical patent/JP5562603B2/ja
Publication of JP2010109341A publication Critical patent/JP2010109341A/ja
Publication of JP2010109341A5 publication Critical patent/JP2010109341A5/ja
Application granted granted Critical
Publication of JP5562603B2 publication Critical patent/JP5562603B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2009220024A 2008-09-30 2009-09-25 表示装置 Expired - Fee Related JP5562603B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009220024A JP5562603B2 (ja) 2008-09-30 2009-09-25 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008252417 2008-09-30
JP2008252417 2008-09-30
JP2009220024A JP5562603B2 (ja) 2008-09-30 2009-09-25 表示装置

Publications (3)

Publication Number Publication Date
JP2010109341A JP2010109341A (ja) 2010-05-13
JP2010109341A5 JP2010109341A5 (enExample) 2012-10-18
JP5562603B2 true JP5562603B2 (ja) 2014-07-30

Family

ID=42298436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009220024A Expired - Fee Related JP5562603B2 (ja) 2008-09-30 2009-09-25 表示装置

Country Status (1)

Country Link
JP (1) JP5562603B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598586B2 (en) 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5752447B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
TWI688047B (zh) * 2010-08-06 2020-03-11 半導體能源研究所股份有限公司 半導體裝置
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8373215B2 (en) * 2010-10-25 2013-02-12 Texas Instruments Incorporated Zero temperature coefficient capacitor
US20120298999A1 (en) * 2011-05-24 2012-11-29 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP2014045175A (ja) * 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
US20150263140A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6615490B2 (ja) * 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI880886B (zh) * 2016-10-07 2025-04-21 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06202156A (ja) * 1992-12-28 1994-07-22 Sharp Corp ドライバーモノリシック駆動素子
JP2001102587A (ja) * 1999-09-28 2001-04-13 Toshiba Corp 薄膜トランジスタおよびその製造方法ならびに半導体薄膜の製造方法
JP4993822B2 (ja) * 2000-06-19 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3638926B2 (ja) * 2001-09-10 2005-04-13 株式会社半導体エネルギー研究所 発光装置及び半導体装置の作製方法
JP4531343B2 (ja) * 2003-03-26 2010-08-25 株式会社半導体エネルギー研究所 駆動回路
JP2005322845A (ja) * 2004-05-11 2005-11-17 Sekisui Chem Co Ltd 半導体デバイスと、その製造装置、および製造方法

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Publication number Publication date
JP2010109341A (ja) 2010-05-13

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