JP5539998B2 - 光指向性センサ - Google Patents
光指向性センサ Download PDFInfo
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- JP5539998B2 JP5539998B2 JP2011530609A JP2011530609A JP5539998B2 JP 5539998 B2 JP5539998 B2 JP 5539998B2 JP 2011530609 A JP2011530609 A JP 2011530609A JP 2011530609 A JP2011530609 A JP 2011530609A JP 5539998 B2 JP5539998 B2 JP 5539998B2
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- 238000000034 method Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 238000004049 embossing Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 16
- 239000011295 pitch Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000011358 absorbing material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0429—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using polarisation elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
- G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
- G01S3/782—Systems for determining direction or deviation from predetermined direction
- G01S3/783—Systems for determining direction or deviation from predetermined direction using amplitude comparison of signals derived from static detectors or detector systems
- G01S3/784—Systems for determining direction or deviation from predetermined direction using amplitude comparison of signals derived from static detectors or detector systems using a mosaic of detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
- G01J2001/061—Baffles
Description
Claims (13)
- 複数の感光性素子を有するフォトセンサ;及び
吸光性光選択構造のアレイを形成するように前記フォトセンサ上に配置される複数の吸光性光選択構造;
を有する光指向性センサであって、
少なくとも3つの前記吸光性光選択構造からなる連続体は、前記アレイに対してそれぞれ異なっていてかつ共通部分を有する角度の範囲内の光を検知できるように前記連続体の個々の構造を形成されることによって実現される構造特性を有し、
前記構造特性は、複数の吸光性光選択構造間の間隔、吸光性光選択構造の高さ、及び吸光性光選択構造の幾何学形状からなる群のうちの1つである、
光指向性センサ。 - 電磁放射線阻止構造をさらに有する、請求項1に記載の光指向性センサ。
- 波長範囲によって光をフィルタリングするカラーフィルタをさらに有する、請求項1に記載の光指向性センサ。
- ある色温度範囲で光をフィルタリングする色温度フィルタをさらに有する、請求項1に記載の光指向性センサ。
- ある偏光をフィルタリングする偏光フィルタをさらに有する、請求項1に記載の光指向性センサ。
- 光センサの作製方法であって:
電磁放射線阻止粒子を含む溶媒を基板に塗布することで前記基板上に層を形成する工程であって、前記基板は複数の感光性素子を有するフォトセンサを有し、前記複数の感光性素子の各々は光強度を検知するためのものである、工程;
前記基板上に光選択固体構造のアレイを形成する工程であって、少なくとも3つの前記吸光性の光選択構造からなる少なくとも1つの連続体が、前記アレイに対してそれぞれ異なっていてかつ共通部分を有する角度の光を検知できるように前記連続体の各独立した構造を形成することによって実現される構造特性を有する、工程;
を有し、
前記構造特性は、複数の吸光性光選択構造間の間隔、吸光性光選択構造の高さ、及び吸光性光選択構造の幾何学形状からなる群のうちの1つである、
方法。 - 前記基板上に光選択構造のアレイを形成する工程は、微細加工処理を用いて実行される、請求項6に記載の方法。
- 前記微細加工処理は、鋳型成型処理、エンボス加工処理、又はリソグラフィ処理である、請求項7に記載の方法。
- 前記エンボス加工は、可撓性材料で作られるスタンプを用いることによって行われる、請求項8に記載の方法。
- 光選択固体構造のアレイをエッチングする工程をさらに有する、請求項6に記載の方法。
- 前記光選択固体構造のアレイをエッチングする工程は、反応性イオンエッチング及び/又はイオンビームエッチングを用いる工程を有する、請求項9に記載の方法。
- 前記光選択固体構造のアレイに放射線透過材料を塗布する工程をさらに有する、請求項6に記載の方法。
- 請求項1乃至5のうちのいずれか一項に記載の光指向性センサのアレイであって、当該アレイ中の光指向性センサは、少なくとも複数が違いに異なる向きをとるように配置される、光指向性センサのアレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08166294 | 2008-10-10 | ||
EP08166294.2 | 2008-10-10 | ||
PCT/IB2009/054375 WO2010041198A1 (en) | 2008-10-10 | 2009-10-06 | Light directionality sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012505540A JP2012505540A (ja) | 2012-03-01 |
JP5539998B2 true JP5539998B2 (ja) | 2014-07-02 |
Family
ID=41426269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011530609A Active JP5539998B2 (ja) | 2008-10-10 | 2009-10-06 | 光指向性センサ |
Country Status (8)
Country | Link |
---|---|
US (1) | US8462325B2 (ja) |
EP (1) | EP2342578B1 (ja) |
JP (1) | JP5539998B2 (ja) |
KR (1) | KR101633637B1 (ja) |
CN (1) | CN102177442B (ja) |
RU (1) | RU2538428C2 (ja) |
TW (1) | TW201022701A (ja) |
WO (1) | WO2010041198A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5663900B2 (ja) | 2010-03-05 | 2015-02-04 | セイコーエプソン株式会社 | 分光センサー装置及び電子機器 |
JP5862025B2 (ja) * | 2011-03-16 | 2016-02-16 | セイコーエプソン株式会社 | 光学センサー及び電子機器 |
JP6015034B2 (ja) * | 2012-03-07 | 2016-10-26 | セイコーエプソン株式会社 | 光学センサー及び電子機器 |
EP2662895B1 (en) | 2012-05-11 | 2014-06-25 | Nxp B.V. | Integrated circuit including a directional light sensor |
WO2013167466A2 (en) | 2012-05-11 | 2013-11-14 | Nxp B.V. | Integrated circuit with directional light sensor, device including such an ic and method of manufacturing such an ic |
US9116046B2 (en) * | 2013-03-15 | 2015-08-25 | Infineon Technologies Austria Ag | Device and method for determining a direction from a surface of one or more photodetector elements of an integrated circuit to a source providing electromagnetic waves and method for manufacturing an device |
CN104393931B (zh) * | 2014-11-17 | 2018-12-25 | 北京智谷睿拓技术服务有限公司 | 可见光信号接收控制方法、控制装置及接收设备 |
CN106160856B (zh) * | 2015-04-07 | 2019-06-18 | 北京智谷睿拓技术服务有限公司 | 可见光信号接收控制方法及控制装置、可见光信号接收设备 |
CN106159093B (zh) * | 2015-04-20 | 2018-10-16 | 北京纳米能源与系统研究所 | 柔性光传感器及其制备方法 |
RU2602399C1 (ru) * | 2015-05-15 | 2016-11-20 | Вячеслав Данилович Глазков | Способ и устройство формирования апертурной характеристики датчика угловой позиции отдалённого источника излучения |
CN108510755A (zh) * | 2017-03-07 | 2018-09-07 | 詹水旺 | 一种自动识别违规使用汽车远光灯的方法 |
US10620054B2 (en) * | 2018-05-09 | 2020-04-14 | Wisconsin Alumni Research Foundation | Wavefront detector |
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JPH0843200A (ja) | 1994-07-29 | 1996-02-16 | Sanyo Electric Co Ltd | 光軸センサ |
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-
2009
- 2009-10-06 JP JP2011530609A patent/JP5539998B2/ja active Active
- 2009-10-06 WO PCT/IB2009/054375 patent/WO2010041198A1/en active Application Filing
- 2009-10-06 KR KR1020117010584A patent/KR101633637B1/ko active IP Right Grant
- 2009-10-06 EP EP09787367.3A patent/EP2342578B1/en active Active
- 2009-10-06 RU RU2011118455/28A patent/RU2538428C2/ru active
- 2009-10-06 CN CN200980140191.9A patent/CN102177442B/zh active Active
- 2009-10-06 US US13/122,971 patent/US8462325B2/en active Active
- 2009-10-08 TW TW098134164A patent/TW201022701A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
RU2538428C2 (ru) | 2015-01-10 |
EP2342578A1 (en) | 2011-07-13 |
RU2011118455A (ru) | 2012-11-20 |
WO2010041198A1 (en) | 2010-04-15 |
JP2012505540A (ja) | 2012-03-01 |
US20110242526A1 (en) | 2011-10-06 |
KR101633637B1 (ko) | 2016-06-27 |
CN102177442B (zh) | 2014-10-22 |
KR20110069856A (ko) | 2011-06-23 |
CN102177442A (zh) | 2011-09-07 |
US8462325B2 (en) | 2013-06-11 |
EP2342578B1 (en) | 2014-08-20 |
TW201022701A (en) | 2010-06-16 |
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