JP5538128B2 - 排気方法およびガス処理装置 - Google Patents

排気方法およびガス処理装置 Download PDF

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Publication number
JP5538128B2
JP5538128B2 JP2010178688A JP2010178688A JP5538128B2 JP 5538128 B2 JP5538128 B2 JP 5538128B2 JP 2010178688 A JP2010178688 A JP 2010178688A JP 2010178688 A JP2010178688 A JP 2010178688A JP 5538128 B2 JP5538128 B2 JP 5538128B2
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Japan
Prior art keywords
gas
chamber
pressure
processing
exhaust
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JP2010178688A
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English (en)
Japanese (ja)
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JP2012038962A (ja
JP2012038962A5 (https=
Inventor
紀彦 網倉
梨沙子 実吉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2010178688A priority Critical patent/JP5538128B2/ja
Priority to US13/205,077 priority patent/US8597401B2/en
Publication of JP2012038962A publication Critical patent/JP2012038962A/ja
Publication of JP2012038962A5 publication Critical patent/JP2012038962A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/30—Controlling by gas-analysis apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
JP2010178688A 2010-08-09 2010-08-09 排気方法およびガス処理装置 Expired - Fee Related JP5538128B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010178688A JP5538128B2 (ja) 2010-08-09 2010-08-09 排気方法およびガス処理装置
US13/205,077 US8597401B2 (en) 2010-08-09 2011-08-08 Exhausting method and gas processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010178688A JP5538128B2 (ja) 2010-08-09 2010-08-09 排気方法およびガス処理装置

Publications (3)

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JP2012038962A JP2012038962A (ja) 2012-02-23
JP2012038962A5 JP2012038962A5 (https=) 2014-01-16
JP5538128B2 true JP5538128B2 (ja) 2014-07-02

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JP2010178688A Expired - Fee Related JP5538128B2 (ja) 2010-08-09 2010-08-09 排気方法およびガス処理装置

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US (1) US8597401B2 (https=)
JP (1) JP5538128B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10443127B2 (en) * 2013-11-05 2019-10-15 Taiwan Semiconductor Manufacturing Company Limited System and method for supplying a precursor for an atomic layer deposition (ALD) process
JP6257442B2 (ja) 2014-05-15 2018-01-10 東京エレクトロン株式会社 減圧処理装置における排ガス防爆方法
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
JP6811147B2 (ja) * 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
JP6811146B2 (ja) * 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
KR102413076B1 (ko) * 2018-03-22 2022-06-24 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
WO2021053972A1 (ja) 2019-09-19 2021-03-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム、記録媒体および排ガス処理システム
CN116510474B (zh) * 2022-09-20 2026-01-09 北京京仪自动化装备技术股份有限公司 用于半导体废气处理设备的反应腔和反应腔的监测方法
US20250347579A1 (en) * 2024-05-13 2025-11-13 Applied Materials, Inc. Method of in situ leak monitoring in fluid circuits

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JP4245714B2 (ja) * 1998-12-25 2009-04-02 シーケーディ株式会社 排気切換装置
JP2004349442A (ja) * 2003-05-22 2004-12-09 Sony Corp 排ガスの除害方法及び排ガスの除害装置
JP5057647B2 (ja) 2004-07-02 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造装置
US8377818B2 (en) * 2006-07-05 2013-02-19 Tokyo Electron Limited Aftertreatment method for amorphous carbon film
WO2008029800A1 (en) * 2006-09-07 2008-03-13 Tokyo Electron Limited Substrate processing method and storage medium
JP4806615B2 (ja) * 2006-09-28 2011-11-02 株式会社アルバック 排気装置及び排気方法
JP4555320B2 (ja) * 2007-06-15 2010-09-29 東京エレクトロン株式会社 低誘電率絶縁膜のダメージ回復方法及び半導体装置の製造方法
JP4578507B2 (ja) * 2007-07-02 2010-11-10 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP4934117B2 (ja) * 2008-09-03 2012-05-16 東京エレクトロン株式会社 ガス処理装置、ガス処理方法、および記憶媒体
JP5261291B2 (ja) * 2009-06-01 2013-08-14 東京エレクトロン株式会社 処理方法および記憶媒体
JP5242508B2 (ja) * 2009-06-26 2013-07-24 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP5359642B2 (ja) * 2009-07-22 2013-12-04 東京エレクトロン株式会社 成膜方法
JP5782279B2 (ja) * 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2012204408A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 半導体装置の製造方法

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Publication number Publication date
US8597401B2 (en) 2013-12-03
JP2012038962A (ja) 2012-02-23
US20120031266A1 (en) 2012-02-09

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