JP5531236B2 - Glass substrate polishing composition and polishing slurry - Google Patents
Glass substrate polishing composition and polishing slurry Download PDFInfo
- Publication number
- JP5531236B2 JP5531236B2 JP2012547881A JP2012547881A JP5531236B2 JP 5531236 B2 JP5531236 B2 JP 5531236B2 JP 2012547881 A JP2012547881 A JP 2012547881A JP 2012547881 A JP2012547881 A JP 2012547881A JP 5531236 B2 JP5531236 B2 JP 5531236B2
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- JP
- Japan
- Prior art keywords
- polishing
- glass substrate
- polishing slurry
- surface roughness
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 95
- 239000011521 glass Substances 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 title claims description 41
- 239000002002 slurry Substances 0.000 title claims description 31
- 239000000203 mixture Substances 0.000 title description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 150000001412 amines Chemical class 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000004414 alkyl thio group Chemical group 0.000 claims description 8
- 239000008119 colloidal silica Substances 0.000 claims description 7
- 150000004676 glycans Chemical class 0.000 claims description 7
- 229920001282 polysaccharide Polymers 0.000 claims description 7
- 239000005017 polysaccharide Substances 0.000 claims description 7
- 150000003536 tetrazoles Chemical class 0.000 claims description 7
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 6
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 6
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims 1
- 229910000000 metal hydroxide Inorganic materials 0.000 claims 1
- 150000004692 metal hydroxides Chemical class 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000006061 abrasive grain Substances 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- -1 cyclic alkylamine Chemical class 0.000 description 5
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- KIUKXJAPPMFGSW-DNGZLQJQSA-N (2S,3S,4S,5R,6R)-6-[(2S,3R,4R,5S,6R)-3-Acetamido-2-[(2S,3S,4R,5R,6R)-6-[(2R,3R,4R,5S,6R)-3-acetamido-2,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-2-carboxy-4,5-dihydroxyoxan-3-yl]oxy-5-hydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-3,4,5-trihydroxyoxane-2-carboxylic acid Chemical compound CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 KIUKXJAPPMFGSW-DNGZLQJQSA-N 0.000 description 1
- ODDAWJGQWOGBCX-UHFFFAOYSA-N 1-[2-(dimethylazaniumyl)ethyl]tetrazole-5-thiolate Chemical compound CN(C)CCN1N=NN=C1S ODDAWJGQWOGBCX-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-N 1-methyl-2h-tetrazole-5-thione Chemical compound CN1N=NN=C1S XOHZHMUQBFJTNH-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- KYRMPMCAOPMOIR-UHFFFAOYSA-N 5-ethyl-2h-tetrazole Chemical compound CCC=1N=NNN=1 KYRMPMCAOPMOIR-UHFFFAOYSA-N 0.000 description 1
- GONFBOIJNUKKST-UHFFFAOYSA-N 5-ethylsulfanyl-2h-tetrazole Chemical compound CCSC=1N=NNN=1 GONFBOIJNUKKST-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- ZBXNFTFKKOSPLD-UHFFFAOYSA-N 5-methylsulfanyl-2h-tetrazole Chemical compound CSC1=NN=NN1 ZBXNFTFKKOSPLD-UHFFFAOYSA-N 0.000 description 1
- 229920000945 Amylopectin Polymers 0.000 description 1
- 229920000856 Amylose Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920002527 Glycogen Polymers 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229940096919 glycogen Drugs 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 229920002674 hyaluronan Polymers 0.000 description 1
- 229960003160 hyaluronic acid Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000005624 silicic acid group Chemical group 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
本発明は、ハードディスク用ガラス基板、光ディスク用ガラス基板、プラズマディスプレイ（ＰＤＰ）用ガラス基板、液晶ディスプレイ（ＬＣＤ）用ガラス基板及びフォトマスク用ガラス基板などの各種ガラス基板研磨用組成物（以下、研磨用組成物）及びそれを用いた研磨スラリーに関する。更に詳しくは、仕上げ面粗さ及び表面凹凸欠陥の改善に優れた研磨用組成物並びに研磨スラリーに関する。 The present invention relates to various glass substrate polishing compositions such as hard disk glass substrates, optical disk glass substrates, plasma display (PDP) glass substrates, liquid crystal display (LCD) glass substrates, and photomask glass substrates (hereinafter referred to as polishing). And a polishing slurry using the same. More specifically, the present invention relates to a polishing composition and polishing slurry excellent in improving finished surface roughness and surface irregularity defects.
近年ハードディスクは、高記録密度化が求められている。ハードディスクドライブの記録密度を向上させるためには、磁気信号の検出感度を向上させるために、磁気ヘッドと磁気ディスクのフライングハイトをより狭くする必要がある。このためにガラス基板には仕上げ面粗さ及び表面凹凸欠陥の改善が重要課題となっている。
この高記録密度化の流れは年々加速しており、ガラス基板研磨スラリーへの要求が高くなっている。その要求項目は仕上げ面粗さが低いことに始まり、微小ピット、微小突起及び微小スクラッチ等の表面欠陥が無いことやガラス基板の生産能力を向上させるために研磨速度が高いことが求められている。
上記研磨用組成物として、高品質のガラス基板を得るための研磨用組成物が種々提案されている。
例えば特許文献１では、第１級アミノ基を有する脂肪族アミン又はアンモニアを含む研磨スラリーが提案されている。また、特許文献２では、炭酸塩又は硫酸塩を含む研磨スラリーが提案されている。しかしながら、従来技術を用いた研磨用組成物では高記録密度化に適合する仕上げ面粗さが得られていない点において課題が残されている。In recent years, high recording density has been demanded for hard disks. In order to improve the recording density of the hard disk drive, it is necessary to narrow the flying height of the magnetic head and the magnetic disk in order to improve the detection sensitivity of the magnetic signal. For this reason, improvement of finished surface roughness and surface irregularity defects is an important issue for glass substrates.
This trend toward higher recording density is accelerating year by year, and the demand for glass substrate polishing slurry is increasing. The required items start with low finished surface roughness, and are required to have no surface defects such as micro pits, micro protrusions and micro scratches, and to have a high polishing rate in order to improve the glass substrate production capacity. .
Various polishing compositions for obtaining a high-quality glass substrate have been proposed as the polishing composition.
For example, Patent Document 1 proposes a polishing slurry containing an aliphatic amine having a primary amino group or ammonia. In Patent Document 2, a polishing slurry containing carbonate or sulfate is proposed. However, the polishing composition using the prior art still has a problem in that the finished surface roughness suitable for increasing the recording density is not obtained.
本発明の課題は、ガラス基板の加工において、仕上げ面粗さ及び表面凹凸欠陥を改善することのできる研磨スラリー並びに当該研磨スラリーを調製するための研磨用組成物を提供することにある。
本発明者は、特定の研磨用組成物及び研磨砥粒を含む研磨スラリーが上記課題を解決することを見出し、本発明を完成するに至った。The subject of this invention is providing the polishing composition for preparing the polishing slurry which can improve a finishing surface roughness and surface unevenness defect, and the said polishing slurry in the process of a glass substrate.
The present inventor has found that a polishing slurry containing a specific polishing composition and abrasive grains solves the above problems, and has completed the present invention.
本発明は、下記の発明に係る。
１．（Ａ）及び（Ｂ）の成分を含むガラス基板研磨用組成物。
（Ａ）メルカプト基、アルキルチオ基及びアルキル基から選ばれる少なくとも１つの基を有するテトラゾール誘導体
（Ｂ）水
２．（Ａ）、（Ｂ）及び（Ｃ）の成分を含むガラス基板研磨用組成物。
（Ａ）メルカプト基、アルキルチオ基及びアルキル基から選ばれる少なくとも１つの基を有するテトラゾール誘導体
（Ｂ）水
（Ｃ）高分子多糖類
３．（Ａ）、（Ｂ）、（Ｃ）及び（Ｄ）の成分を含むガラス基板研磨用組成物。
（Ａ）メルカプト基、アルキルチオ基及びアルキル基から選ばれる少なくとも１つの基を有するテトラゾール誘導体
（Ｂ）水
（Ｃ）高分子多糖類
（Ｄ）アミン
４．（Ａ）を０．０１〜２０重量％、（Ｃ）を０．０１〜２０重量％、（Ｄ）を０．０１〜２０重量％、（Ｂ）を残部、からなる上記１〜３のいずれかに記載の組成物。
５．ガラス基板が、ハードディスクガラス基板である上記１〜４のいずれかに記載の組成物。
６．上記のいずれかに記載の研磨用組成物及び研磨砥粒を含む研磨スラリー。The present invention relates to the following inventions.
1. A composition for polishing a glass substrate comprising the components (A) and (B).
(A) a tetrazole derivative having at least one group selected from a mercapto group, an alkylthio group and an alkyl group (B) water 2. A composition for polishing a glass substrate comprising the components (A), (B) and (C).
(A) a tetrazole derivative having at least one group selected from a mercapto group, an alkylthio group and an alkyl group (B) water (C) a high molecular polysaccharide; A composition for polishing a glass substrate comprising the components (A), (B), (C) and (D).
(A) a tetrazole derivative having at least one group selected from a mercapto group, an alkylthio group and an alkyl group (B) water (C) a high molecular polysaccharide (D) amine Any one of the above 1 to 3 comprising (A) 0.01 to 20% by weight, (C) 0.01 to 20% by weight, (D) 0.01 to 20% by weight, and (B) the remainder. A composition according to claim 1.
5. 5. The composition according to any one of 1 to 4 above, wherein the glass substrate is a hard disk glass substrate.
6). A polishing slurry comprising the polishing composition according to any one of the above and polishing abrasive grains.
本発明により、各種ガラス基板の加工において、仕上げ面粗さ及び表面凹凸欠陥を改善させることが可能である。更に、研磨速度を向上させることができる。 According to the present invention, it is possible to improve finished surface roughness and surface irregularity defects in the processing of various glass substrates. Furthermore, the polishing rate can be improved.
本発明のガラス基板研磨用組成物の各成分について以下に詳しく説明する。
（Ａ）メルカプト基、アルキルチオ基及びアルキル基から選ばれる少なくとも１つの基を有するテトラゾール誘導体において、アルキルチオ基としては例えば、炭素数１〜４の低級アルキルチオ基が挙げられ、アルキル基としては例えば、炭素数１〜４の低級アルキル基が挙げられる。具体的には、５−メルカプト−１−メチルテトラゾール、１−［２−（ジメチルアミノ）エチル］−５−メルカプト−１Ｈ−テトラゾール、５−（メチルチオ）−１Ｈ−テトラゾール、５−（エチルチオ）−１Ｈ−テトラゾール、５−メチルテトラゾール、５−エチルテトラゾール等が挙げられる。
（Ｂ）水としては、イオン交換水もしくは純水等の精製水が好ましい。
（Ｃ）高分子多糖類としては、例えば、プルラン、アミロース、アミロペクチン、グリコーゲン、デキストリン、ヒアルロン酸等が挙げられる。
（Ｄ）アミンは、特に限定されないが、例えば、イソプロピルアミン、シクロヘキシルアミン、ジエチルアミン、トリエチルアミン等の炭素数１〜１０の鎖状又は環状のアルキルアミン、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、モノイソプロパノールアミン、ジイソプロパノールアミン、トリイソプロパノールアミン、Ｎ−メチルモノエタノールアミン、Ｎ−メチルジエタノールアミン、Ｎ−エチルジエタノールアミン、Ｎ，Ｎ−ジメチルエタノールアミン、Ｎ，Ｎ−ジエチルエタノールアミン、ジグリコールアミン、２−アミノ−２−メチル−１−プロパノール、ｎ−ブタノールアミン、イソブタノールアミン、ｔｅｒｔ−ブタノールアミン等の炭素数１〜１０のアルカノールアミン、モルホリン、Ｎ−（２−アミノエチル）ピペラジン等の炭素数４〜１０、好ましくは炭素数４〜６の環状アミン等が挙げられる。これらアミンのうち、一般式
（Ｒ２）ｍＮ（−Ｒ１−ＯＨ）ｎ
（Ｒ１は炭素数２〜５の直鎖又は分岐のアルキレン基であり、Ｒ２は水素原子又は炭素数１〜３のアルキル基を示す。ｍは０、１又は２、ｎは１〜３の整数であり、ｍ＋ｎ＝３である。）で表わされるアミン、モルホリン、Ｎ−（２−アミノエチル）ピペラジンが好ましい。
更に、これら組成物に加え、多価アルコール類を適宜用いても良い。多価アルコール類としては多価アルコール及び多価アルコールのアルキルエーテルを例示でき、例えばエチレングリコール、ジエチレングリコール、トリエチレングリコール、テトラエチレングリコール、プロピレングリコール、ジプロピレングリコール、トリプロピレングリコール、ブチルカルビトール、ヘキシレングリコール、ブタンジオール、ブチルジグリコール、グリセリン、エチレングリコールモノメチルエーテル、ジエチレングリコールジメチルエーテル、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールジメチルエーテル、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノブチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ソルビトール、スクロース等が挙げられる。
研磨用組成物における成分（Ａ）〜（Ｄ）の含有量は特に限定されないが、成分（Ａ）の含有量としては０．０１〜２０重量％が好ましく、０．０５〜１０重量％がより好ましく、０．１〜５重量％が更に好ましく、１〜５重量％が最も好ましい。成分（Ａ）の含有量が上記範囲であれば、仕上げ面粗さ及び表面凹凸欠陥の改善効果が得られる。更には、研磨速度も向上できる。
高分子多糖類（Ｃ）の含有量としては０．０１〜２０重量％が好ましく、０．０５〜１０重量％がより好ましく、０．１〜５重量％が更に好ましく、１〜５重量％が最も好ましい。成分（Ｃ）の含有量を上記範囲であれば、特に表面凹凸欠陥の改善効果が得られる。
アミン（Ｄ）の含有量としては０．０１〜２０重量％が好ましく、０．０５〜１０重量％がより好ましく、０．１〜５重量％が更に好ましく、１〜５重量％が最も好ましい。成分（Ｄ）の含有量を上記範囲であれば、ｐＨをアルカリ性へ調整でき、仕上げ面粗さ及び表面凹凸欠陥の改善効果が得られる。好ましいｐＨ範囲は、８〜１３である。
水（Ｂ）の含有量は、残部である。
本発明の研磨用組成物に研磨砥粒を分散させることにより、本発明の研磨スラリーを得ることができる。研磨砥粒としては、例えば、コロイダルシリカ、フュームドシリカ、ダイヤモンド、アルミナ、セリア、ジルコニア、チタニアなどの種々公知の研磨砥粒に適用できる。なかでも研磨砥粒としてはコロイダルシリカ及びジルコニアが好ましい。コロイダルシリカの大きさとしては、一般に平均粒子径０．００１〜１μｍ、好ましくは０．００１〜０．５μｍ、より好ましくは０．００１〜０．２μｍ程度が良い。研磨スラリー中のコロイダルシリカの含有量は特に限定されないが、通常４０重量％以下、好ましくは０．１〜２０重量％が良い。ジルコニアの大きさとしては、一般に平均粒子径０．１〜１５μｍ、好ましくは０．１〜１０μｍ、より好ましくは０．１〜５μｍ程度が良い。研磨スラリー中のジルコニアの含有量は特に限定されないが、通常２０重量％以下、好ましくは０．１〜１０重量％が良い。
本発明のガラス基板研磨用組成物及び研磨スラリーによって研磨されるガラス基板は特に限定されないが、例えば珪酸を主成分とし、他にガラス中にアルミナ、酸化ナトリウム、酸化カリウム等の金属化合物を含有してもよい。
本発明の研磨スラリーは、ガラス基板加工用の研磨スラリーであって、ハードディスクＮｉＰ合金基板加工用の研磨スラリーや、通常の鉄やアルミ材料の水溶性切削加工、水溶性研削加工、水溶性研磨加工液とは、区別されるものである。上記通常の加工においては、循環使用が一般的であり、防腐、消泡、防錆などの二次性能等において要求性能が大きく異なる。Each component of the composition for glass substrate polishing of this invention is demonstrated in detail below.
(A) In the tetrazole derivative having at least one group selected from a mercapto group, an alkylthio group and an alkyl group, examples of the alkylthio group include a lower alkylthio group having 1 to 4 carbon atoms, and examples of the alkyl group include carbon. The lower alkyl group of number 1-4 is mentioned. Specifically, 5-mercapto-1-methyltetrazole, 1- [2- (dimethylamino) ethyl] -5-mercapto-1H-tetrazole, 5- (methylthio) -1H-tetrazole, 5- (ethylthio)- 1H-tetrazole, 5-methyltetrazole, 5-ethyltetrazole and the like can be mentioned.
(B) The water is preferably purified water such as ion exchange water or pure water.
Examples of the (C) high molecular polysaccharide include pullulan, amylose, amylopectin, glycogen, dextrin, hyaluronic acid and the like.
(D) The amine is not particularly limited. For example, a linear or cyclic alkylamine having 1 to 10 carbon atoms such as isopropylamine, cyclohexylamine, diethylamine, triethylamine, monoethanolamine, diethanolamine, triethanolamine, monoisopropanol Amine, diisopropanolamine, triisopropanolamine, N-methylmonoethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, diglycolamine, 2-amino C1-C10 alkanolamines such as 2-methyl-1-propanol, n-butanolamine, isobutanolamine, tert-butanolamine, morpholine, N- (2 4-10 carbon atoms, such as aminoethyl) piperazine, and the like, preferably a cyclic amine having 4 to 6 carbon atoms. Of these amines, the general formula (R 2 ) mN (—R 1 —OH) n
(R 1 is a linear or branched alkylene group having 2 to 5 carbon atoms, R 2 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, m is 0, 1 or 2, and n is 1 to 3) And an amine represented by m + n = 3), morpholine, and N- (2-aminoethyl) piperazine are preferable.
Furthermore, in addition to these compositions, polyhydric alcohols may be used as appropriate. Examples of polyhydric alcohols include polyhydric alcohols and alkyl ethers of polyhydric alcohols, such as ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, butyl carbitol, Xylene glycol, butanediol, butyl diglycol, glycerin, ethylene glycol monomethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monobutyl ether Jie Glycol dimethyl ether, diethylene glycol diethyl ether, sorbitol, sucrose and the like.
Although content of component (A)-(D) in polishing composition is not specifically limited, As content of component (A), 0.01-20 weight% is preferable and 0.05-10 weight% is more. Preferably, 0.1 to 5% by weight is more preferable, and 1 to 5% by weight is most preferable. If content of a component (A) is the said range, the finishing surface roughness and the improvement effect of a surface uneven | corrugated defect will be acquired. Furthermore, the polishing rate can be improved.
The content of the polymeric polysaccharide (C) is preferably 0.01 to 20% by weight, more preferably 0.05 to 10% by weight, further preferably 0.1 to 5% by weight, and 1 to 5% by weight. Most preferred. If content of a component (C) is the said range, the improvement effect of a surface uneven | corrugated defect will be acquired especially.
The content of amine (D) is preferably 0.01 to 20% by weight, more preferably 0.05 to 10% by weight, still more preferably 0.1 to 5% by weight, and most preferably 1 to 5% by weight. If content of a component (D) is the said range, pH can be adjusted to alkalinity and the finishing surface roughness and the improvement effect of a surface uneven | corrugated defect will be acquired. A preferred pH range is 8-13.
The content of water (B) is the balance.
The polishing slurry of the present invention can be obtained by dispersing abrasive grains in the polishing composition of the present invention. As abrasive grains, for example, various known abrasive grains such as colloidal silica, fumed silica, diamond, alumina, ceria, zirconia, and titania can be applied. Of these, colloidal silica and zirconia are preferred as the abrasive grains. The size of the colloidal silica is generally about 0.001 to 1 μm, preferably 0.001 to 0.5 μm, more preferably about 0.001 to 0.2 μm. The colloidal silica content in the polishing slurry is not particularly limited, but is usually 40% by weight or less, preferably 0.1 to 20% by weight. The size of zirconia is generally about 0.1 to 15 μm, preferably 0.1 to 10 μm, more preferably about 0.1 to 5 μm. The content of zirconia in the polishing slurry is not particularly limited, but is usually 20% by weight or less, preferably 0.1 to 10% by weight.
The glass substrate polished by the glass substrate polishing composition of the present invention and the polishing slurry is not particularly limited. For example, the main component is silicic acid, and the glass contains a metal compound such as alumina, sodium oxide, or potassium oxide. May be.
The polishing slurry of the present invention is a polishing slurry for processing a glass substrate, and is a polishing slurry for processing a hard disk NiP alloy substrate, a water-soluble cutting process of a normal iron or aluminum material, a water-soluble grinding process, a water-soluble polishing process Liquid is to be distinguished. In the above-mentioned normal processing, circulation is generally used, and the required performance differs greatly in secondary performance such as antiseptic, antifoaming, and rust prevention.
以下に示す実施例及び比較例においては、以下に示す研磨評価を行った。ただし、本発明は実施例に限定されるものではない。
実施例１〜８及び比較例１〜６
下記表１〜３に示す成分（数値は重量％）を配合してガラス基板研磨用組成物を調製した。水は純水を用いた。比較例１のＮ−（２−アミノエチル）ピペラジン（ＡＥＰ）は、ＷＯ２００４／１００２４２（特許文献１）で用いられる第１級アミノ基を有する脂肪族アミンである。比較例２の炭酸カリウムは、特開２００６−３１５１６０（特許文献２）で用いられる炭酸塩である。比較例４〜６の１Ｈ−テトラゾール、イミダゾール、ベンゾトリアゾールは、一般的に金属材料の研磨スラリーに使用されている複素環化合物である。
ガラス基板用研磨スラリーは、研磨用組成物２５０ｇを純水２８７５ｇで希釈後、コロイダルシリカスラリー（アデライトＡＴ−４０：シリカ濃度４０％、一次粒子径１０−２０ｎｍ）を１８７５ｇ添加することによりコロイダルシリカ含有量が１５重量％の研磨スラリーを調製した。この研磨スラリーを使用し、ハードディスクガラス基板の研磨評価を行った。結果を表１〜３に示す。表１〜３の研磨後の表面粗さ（仕上げ面粗さ）、最大高低差及び研磨速度の結果は、比較例１のＮ−（２−アミノエチル）ピペラジン（ＡＥＰ）の各性能を１．００とした相対比較である。
実施例１〜８及び比較例１〜６の特性は以下の方法により測定した。
研磨特性評価
スウェードパッド（ニッタ・ハース株式会社製Ｓｕｐｒｅｍｅ ＲＮ−Ｒ）をＣＭＰ研磨装置（ナノファクター製ＮＦ−３００）に設置し、プラテン回転数３０回転／分、ヘッド回転数３０回転／分、研磨圧力９０ｇ／ｃｍ２の条件で研磨スラリーを１５０ｍｌ／分の速度で供給しつつ、直径２．５インチのハードディスクガラス基板を研磨時間５分で研磨評価を行った。研磨後の表面粗さ（仕上げ面粗さ）、最大高低差及び研磨速度を評価することによって研磨評価を行った。なお、研磨後の表面粗さ、最大高低差及び研磨速度の測定方法は以下の方法で測定した。
表面粗さ
研磨後の表面粗さ（Ｒａ）は走査プローブ顕微鏡（エスアイアイ・ナノテクノロジー製ＳＰＡ−４００）を用いて、ＡＦＭモードで測定した。
最大高低差
最大高低差とは、ガラス表面の最大山（Ｒｐ）と最大谷（Ｒｖ）の距離のことであり、表面凹凸欠陥の評価方法である。研磨後の最大高低差は走査プローブ顕微鏡（ＳＰＡ−４００）を用いて、ＡＦＭモードで測定した。
研磨速度
研磨前後のガラス基板の重量変化を電子天秤（ザルトリウス社製ＬＥ２２５Ｄ）により測定して研磨量を求め研磨速度を求めた。
表２より実施例２及び４〜６の研磨用組成物は、表面粗さ（仕上げ面粗さ）及び最大高低差において比較例４〜６の１Ｈ−テトラゾール、イミダゾール、ベンゾトリアゾールより改善されていることが確認できる。
表３より高分子多糖類の添加により、最大高低差が大幅に改善することが確認できる。更に、高分子多糖類及びアミンの添加により、表面粗さ（仕上げ面粗さ）及び最大高低差の両立が可能であることが確認できる。
実施例９〜１０及び比較例７
下記表４に示す成分（数値は重量％）を配合してガラス基板研磨用組成物を調製した。水は純水を用いた。比較例７は、水のみである。
ガラス基板用研磨スラリーは、研磨用組成物１０ｇを純水１７０ｇで希釈後、ジルコニア（キシダ化学製：粒子径約４μｍ）を２０ｇ添加することによりジルコニア含有量が１０重量％の研磨スラリーを調製した。この研磨スラリーを使用し、ハードディスクガラス基板の研磨評価を行った。結果を表４に示す。表４の研磨後の表面粗さ（仕上げ面粗さ）、最大高低差及び研磨速度の結果は、比較例１の各性能を１．００とした相対比較で示した。
実施例９〜１０及び比較例７の特性は以下の方法により測定した。
研磨特性評価
ウレタンパッド（ニッタ・ハース株式会社製ＩＣ１０００）をＣＭＰ研磨装置（ナノファクター製ＮＦ−３００）に設置し、プラテン回転数５０回転／分、ヘッド回転数５０回転／分、研磨圧力３６０ｇ／ｃｍ２の条件で研磨スラリーを５０ｍｌ／分の速度で供給しつつ、直径２．５インチのハードディスクガラス基板を研磨時間２分で研磨評価を行った。研磨後の表面粗さ（仕上げ面粗さ）、最大高低差及び研磨速度を評価することによって研磨評価を行った。なお、研磨後の表面粗さ、最大高低差及び研磨速度の測定方法は以下の方法で測定した。
表面粗さ
研磨後の表面粗さ（Ｒａ）は走査プローブ顕微鏡（島津製作所製ＳＰＭ−９７００）を用いて、ＤＦＭモードで測定した。
最大高低差
最大高低差とは、ガラス表面の最大山（Ｒｐ）と最大谷（Ｒｖ）の距離のことであり、表面凹凸欠陥の評価方法である。研磨後の最大高低差は走査プローブ顕微鏡（島津製作所製ＳＰＭ−９７００）を用いて、ＤＦＭモードで測定した。
研磨速度
研磨前後のガラス基板の重量変化を電子天秤（ザルトリウス社製ＬＥ２２５Ｄ）により測定して研磨量を求め研磨速度を求めた。
Examples 1-8 and Comparative Examples 1-6
The components shown in the following Tables 1 to 3 (numerical values are% by weight) were blended to prepare a glass substrate polishing composition. Pure water was used as the water. N- (2-aminoethyl) piperazine (AEP) of Comparative Example 1 is an aliphatic amine having a primary amino group used in WO2004 / 100242 (Patent Document 1). The potassium carbonate of Comparative Example 2 is a carbonate used in JP-A-2006-315160 (Patent Document 2). 1H-tetrazole, imidazole, and benzotriazole of Comparative Examples 4 to 6 are heterocyclic compounds that are generally used in polishing slurries of metal materials.
The polishing slurry for glass substrate contains colloidal silica by adding 1875 g of colloidal silica slurry (Adelite AT-40: silica concentration 40%, primary particle diameter 10-20 nm) after diluting 250 g of the polishing composition with 2875 g of pure water. A polishing slurry having an amount of 15% by weight was prepared. Polishing evaluation of the hard disk glass substrate was performed using this polishing slurry. The results are shown in Tables 1-3. The results of the surface roughness after polishing (finished surface roughness), the maximum height difference, and the polishing rate in Tables 1 to 3 indicate that each performance of N- (2-aminoethyl) piperazine (AEP) of Comparative Example 1 is 1. The relative comparison is 00.
The characteristics of Examples 1 to 8 and Comparative Examples 1 to 6 were measured by the following method.
Polishing characteristics evaluation A suede pad (Supreme RN-R manufactured by Nitta Haas Co., Ltd.) is installed in a CMP polishing apparatus (NF-300 manufactured by Nano Factor), and the platen rotation speed is 30 rpm and the head rotation speed is 30 rpm. Polishing evaluation was performed on a hard disk glass substrate having a diameter of 2.5 inches with a polishing time of 5 minutes while supplying the polishing slurry at a rate of 150 ml / min under the condition of a pressure of 90 g / cm 2 . Polishing evaluation was performed by evaluating the surface roughness after polishing (finished surface roughness), the maximum height difference, and the polishing rate. In addition, the surface roughness after grinding | polishing, the maximum height difference, and the measuring method of polishing rate were measured with the following method.
Surface Roughness Surface roughness (Ra) after polishing was measured in an AFM mode using a scanning probe microscope (SP-400 manufactured by SII Nanotechnology).
Maximum height difference The maximum height difference is the distance between the maximum peak (Rp) and the maximum valley (Rv) on the glass surface, and is a method for evaluating surface irregularities. The maximum height difference after polishing was measured in the AFM mode using a scanning probe microscope (SPA-400).
Polishing rate The weight change of the glass substrate before and after polishing was measured with an electronic balance (LE225D manufactured by Sartorius) to determine the polishing amount, and the polishing rate was determined.
From Table 2, the polishing compositions of Examples 2 and 4 to 6 are improved from the 1H-tetrazole, imidazole, and benzotriazole of Comparative Examples 4 to 6 in terms of surface roughness (finished surface roughness) and maximum height difference. Can be confirmed.
From Table 3, it can be confirmed that the maximum height difference is greatly improved by the addition of the polymeric polysaccharide. Furthermore, it can be confirmed that both the surface roughness (finished surface roughness) and the maximum height difference can be achieved by adding the polymer polysaccharide and the amine.
Examples 9 to 10 and Comparative Example 7
A composition for polishing a glass substrate was prepared by blending the components shown in Table 4 below (numerical values are% by weight). Pure water was used as the water. Comparative Example 7 is only water.
The glass substrate polishing slurry was prepared by diluting 10 g of the polishing composition with 170 g of pure water and then adding 20 g of zirconia (manufactured by Kishida Chemical Co., Ltd .: particle diameter of about 4 μm) to prepare a polishing slurry having a zirconia content of 10 wt%. . Polishing evaluation of the hard disk glass substrate was performed using this polishing slurry. The results are shown in Table 4. The results of surface roughness after polishing (finished surface roughness), maximum height difference, and polishing rate in Table 4 were shown by relative comparison with each performance of Comparative Example 1 being 1.00.
The characteristics of Examples 9 to 10 and Comparative Example 7 were measured by the following method.
Polishing characteristic evaluation Urethane pad (IC1000 manufactured by Nitta Haas Co., Ltd.) is installed in a CMP polishing apparatus (NF-300 manufactured by Nano Factor), platen rotation speed 50 rotations / minute, head rotation speed 50 rotations / minute, polishing pressure 360 g / Polishing evaluation was performed on a hard disk glass substrate having a diameter of 2.5 inches with a polishing time of 2 minutes while supplying the polishing slurry at a rate of 50 ml / min under the condition of cm 2 . Polishing evaluation was performed by evaluating the surface roughness after polishing (finished surface roughness), the maximum height difference, and the polishing rate. In addition, the surface roughness after grinding | polishing, the maximum height difference, and the measuring method of polishing rate were measured with the following method.
Surface Roughness Surface roughness (Ra) after polishing was measured in a DFM mode using a scanning probe microscope (SPM-9700, manufactured by Shimadzu Corporation).
Maximum height difference The maximum height difference is the distance between the maximum peak (Rp) and the maximum valley (Rv) on the glass surface, and is a method for evaluating surface irregularities. The maximum height difference after polishing was measured in a DFM mode using a scanning probe microscope (SPM-9700, manufactured by Shimadzu Corporation).
Polishing rate The weight change of the glass substrate before and after polishing was measured with an electronic balance (LE225D manufactured by Sartorius) to determine the polishing amount, and the polishing rate was determined.
本発明によれば、ハードディスク用ガラス基板、光ディスク用ガラス基板、プラズマディスプレイ（ＰＤＰ）用ガラス基板、液晶ディスプレイ（ＬＣＤ）用ガラス基板及びフォトマスク用ガラス基板などの各種ガラス基板の研削及び切断等に適用できる。 According to the present invention, the glass substrate for hard disk, the glass substrate for optical disk, the glass substrate for plasma display (PDP), the glass substrate for liquid crystal display (LCD), the glass substrate for photomask, etc. Applicable.
Claims (4)
（Ａ）メルカプト基及びアルキルチオ基から選ばれる少なくとも１つの基を有するテトラゾール誘導体
（Ｂ）水
（Ｃ）高分子多糖類
（Ｄ）アミン
（ただし、ポリウレタン、アミノ酸、４価の金属水酸化物のいずれも含有しない） A glass substrate polishing slurry containing the components (A), (B), (C), (D) and colloidal silica.
(A) a tetrazole derivative having at least one group selected from a mercapto group and an alkylthio group (B) water (C) a polymeric polysaccharide (D) amine (however, any of polyurethane, amino acid, and tetravalent metal hydroxide) Not contained)
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| PCT/JP2011/078231 WO2012077693A1 (en) | 2010-12-06 | 2011-11-30 | Composition for polishing glass substrate, and polishing slurry |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004031446A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| JP2007095841A (en) * | 2005-09-27 | 2007-04-12 | Fujifilm Corp | Chemical mechanical polishing method |
| JP2007227758A (en) * | 2006-02-24 | 2007-09-06 | Fujifilm Corp | Polishing solution for metal |
| JP2007311779A (en) * | 2006-04-21 | 2007-11-29 | Hitachi Chem Co Ltd | Cmp abrasive, and method of polishing substrate |
| JP2009094430A (en) * | 2007-10-12 | 2009-04-30 | Adeka Corp | Polishing composition for cmp |
| JP2009117789A (en) * | 2007-10-17 | 2009-05-28 | Hitachi Chem Co Ltd | Polishing solution for cmp and polishing method |
| JP2011134388A (en) * | 2009-12-24 | 2011-07-07 | Kao Corp | Polishing liquid composition for magnetic disk substrate |
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| JP4273475B2 (en) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP2001269859A (en) * | 2000-03-27 | 2001-10-02 | Jsr Corp | Aqueous dispersing element for polishing chemical machine |
| US7553345B2 (en) * | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
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- 2011-11-30 CN CN201180058490.5A patent/CN103249525B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004031446A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| JP2007095841A (en) * | 2005-09-27 | 2007-04-12 | Fujifilm Corp | Chemical mechanical polishing method |
| JP2007227758A (en) * | 2006-02-24 | 2007-09-06 | Fujifilm Corp | Polishing solution for metal |
| JP2007311779A (en) * | 2006-04-21 | 2007-11-29 | Hitachi Chem Co Ltd | Cmp abrasive, and method of polishing substrate |
| JP2009094430A (en) * | 2007-10-12 | 2009-04-30 | Adeka Corp | Polishing composition for cmp |
| JP2009117789A (en) * | 2007-10-17 | 2009-05-28 | Hitachi Chem Co Ltd | Polishing solution for cmp and polishing method |
| JP2011134388A (en) * | 2009-12-24 | 2011-07-07 | Kao Corp | Polishing liquid composition for magnetic disk substrate |
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| SG191038A1 (en) | 2013-07-31 |
| MY160307A (en) | 2017-02-28 |
| JPWO2012077693A1 (en) | 2014-05-19 |
| CN103249525A (en) | 2013-08-14 |
| CN103249525B (en) | 2016-01-06 |
| WO2012077693A1 (en) | 2012-06-14 |
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