JP5528794B2 - 交流駆動型発光装置 - Google Patents
交流駆動型発光装置 Download PDFInfo
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- JP5528794B2 JP5528794B2 JP2009299148A JP2009299148A JP5528794B2 JP 5528794 B2 JP5528794 B2 JP 5528794B2 JP 2009299148 A JP2009299148 A JP 2009299148A JP 2009299148 A JP2009299148 A JP 2009299148A JP 5528794 B2 JP5528794 B2 JP 5528794B2
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- 229910002601 GaN Inorganic materials 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 19
- 238000009877 rendering Methods 0.000 claims description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- -1 gallium nitride compound Chemical class 0.000 claims 2
- 239000010410 layer Substances 0.000 description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 230000000694 effects Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Description
10 平面
12 交流電源装置
14 第1発光ダイオードアレイ
18 第2発光ダイオードアレイ
20 修正回路
21 交流駆動用発光ダイオード素子
30 限流抵抗
31 発光ダイオードアレイ
40 ブリッジ整流回路
41 発光ダイオードアレイ
50 発光装置
51 リードフレーム
511 凹槽区域
52、77 第1発光ダイオードチップ
53、71、72、73、74,75 第2発光ダイオードチップ
53a 垂直電極式直流駆動用発光ダイオードチップ
53b 水平電極式直流駆動用発光ダイオードチップ
54 ワイアボンディングパッド回路
55 方位標示点
61 最下層回路
62、63 中間層回路
64 最上層回路
70、76 ノード
80 サファイア基板
81 N型窒化ガリウム層
82 窒化インジウムガリウム発光層
83 P型窒化ガリウム層
84 透明導電層
85 第1絶縁層
86 オーム接触の正電極
87 オーム接続の負電極
88 直列接続電極
89 第2絶縁保護層
90 ワイアボンディングパッド
91 イットリウム・アルミニウム・ガーネット蛍光粉
92 珪酸塩系蛍光粉
93 パッケージ用シリカゲル材料
Claims (12)
- 交流駆動型発光装置であって、
リードフレームと、
前記リードフレーム上に配置して形成する少なくとも一つの第1発光ダイオードチップと、
少なくとも一つの電圧補償回路と、を含み、
前記電圧補償回路は、少なくとも5つの第2発光ダイオードチップがブリッジ方式で接続された回路からなり、且つ、第1ダイオードチップから分離して前記リードフレーム上に配置され、
前記電圧補償回路と前記第1発光ダイオードチップは交流電源の間で直列接続され、交流電源の正及び負の半周期の間、少なくとも一つの第2発光ダイオードチップは継続的に通電し、
前記第1発光ダイオードチップの発光波長と前記第2発光ダイオードチップの発光波長は異なり、
前記電圧補償回路、前記第一発光ダイオードチップ、及び前記リードフレームの上方には、少なくとも2種類の蛍光粉及びゲル材料が配置されて形成される、ことを特徴とする交流駆動型発光装置。 - 前記第1発光ダイオードチップは、複数の小型発光ダイオードチップの直列接続により形成されることを特徴とする請求項1に記載の交流駆動型発光装置。
- 前記複数の小型発光ダイオードチップの直列接続は、二つの小型チップの電極が逆方向接続により、一つの組立ユニットを形成することを特徴とする請求項2に記載の交流駆動型発光装置。
- 前記組立ユニットが交流駆動するとき、正及び負の半周期に対応して、二つの電極が逆方向接続された小型チップが交互に発光することを特徴とする請求項3に記載の交流駆動型発光装置。
- 前記電圧補償回路は、電圧補償と演色性補償の機能を有することを特徴とする請求項1乃至4のいずれかに記載の交流駆動型発光装置。
- 前記リードフレーム上の配置は、前記電圧補償回路で使用される複数の第2発光ダイオードチップおよび前記第1発光ダイオードチップが、それぞれ異なる基板上で製作されることを特徴とする請求項1乃至5のいずれかに記載の交流駆動型発光装置。
- 前記第1発光ダイオードチップおよび前記第2発光ダイオードチップは窒化ガリウム系化合物半導体材料であることを特徴とする請求項1に記載の交流駆動型発光装置。
- 前記第1発光ダイオードチップおよび前記第2発光ダイオードチップはそれぞれ異なる波長である光線を放出することを特徴とする請求項1に記載の交流駆動型発光装置。
- 前記第2発光ダイオードチップは、窒化インジウム系、AlGaInP系、AlGaAs系、AsGaP系またはリン化ガリウム系化合物半導体材料のいずれかで形成することを特徴とする請求項8に記載の交流駆動型発光装置。
- 前記複数の第2発光ダイオードチップは、ブリッジ方式で接続することにより、電圧補償と演色性補償の機能を達成することを特徴とする請求項1に記載の交流駆動型発光装置。
- 前記リードフレームは、さらにワイアボンディングパッドを含む多層プリント回路板であることを特徴とする請求項1乃至10のいずれかに記載の交流駆動型発光装置。
- 前記蛍光粉は、イットリウム・アルミニウム・ガーネット蛍光粉、珪酸塩系蛍光粉または窒化物系蛍光粉のいずれかであることを特徴とする請求項1乃至11のいずれかに記載の交流駆動型発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/832,377 US8450748B2 (en) | 2009-03-19 | 2010-07-08 | Solid state light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16142309P | 2009-03-19 | 2009-03-19 | |
US61/161,423 | 2009-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010226088A JP2010226088A (ja) | 2010-10-07 |
JP5528794B2 true JP5528794B2 (ja) | 2014-06-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009299148A Active JP5528794B2 (ja) | 2009-03-19 | 2009-12-29 | 交流駆動型発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8450748B2 (ja) |
EP (1) | EP2230886B1 (ja) |
JP (1) | JP5528794B2 (ja) |
CN (1) | CN101839403B (ja) |
TW (1) | TWM374153U (ja) |
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-
2009
- 2009-05-27 TW TW098209505U patent/TWM374153U/zh not_active IP Right Cessation
- 2009-07-13 CN CN2009101403545A patent/CN101839403B/zh active Active
- 2009-12-29 JP JP2009299148A patent/JP5528794B2/ja active Active
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2010
- 2010-01-26 EP EP10151638.3A patent/EP2230886B1/en active Active
- 2010-07-08 US US12/832,377 patent/US8450748B2/en active Active
Also Published As
Publication number | Publication date |
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EP2230886A1 (en) | 2010-09-22 |
JP2010226088A (ja) | 2010-10-07 |
US20110180804A1 (en) | 2011-07-28 |
CN101839403A (zh) | 2010-09-22 |
CN101839403B (zh) | 2013-04-03 |
EP2230886B1 (en) | 2020-04-22 |
TWM374153U (en) | 2010-02-11 |
US8450748B2 (en) | 2013-05-28 |
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