JP5526963B2 - 半導体封止用エポキシ樹脂組成物及び半導体装置 - Google Patents
半導体封止用エポキシ樹脂組成物及び半導体装置 Download PDFInfo
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- JP5526963B2 JP5526963B2 JP2010094109A JP2010094109A JP5526963B2 JP 5526963 B2 JP5526963 B2 JP 5526963B2 JP 2010094109 A JP2010094109 A JP 2010094109A JP 2010094109 A JP2010094109 A JP 2010094109A JP 5526963 B2 JP5526963 B2 JP 5526963B2
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- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GBNDTYKAOXLLID-UHFFFAOYSA-N zirconium(4+) ion Chemical compound [Zr+4] GBNDTYKAOXLLID-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Description
好な耐半田性を有する半導体封止用エポキシ樹脂組成物、ならびに、信頼性に優れた半導体装置を提供するものである。
式(1)で表されるエポキシ樹脂(a1)及び/又は下記一般式(2)で表されるエポキシ樹脂(a2)を用いることが好ましい。本発明の半導体封止用エポキシ樹脂組成物に用いられる下記一般式(1)で表されるエポキシ樹脂(a1)、及び下記一般式(2)で表されるエポキシ樹脂(a2)は、いずれも結晶性エポキシ樹脂であり、常温時には固体で取り扱い性に優れ、かつ成形時の溶融粘度が非常に低い特長を有する。これらのエポキシ樹脂は溶融粘度が低いことにより、半導体封止用エポキシ樹脂組成物の高流動化を得ることができ、無機質充填材を高充填化することができる。また、下記一般式(1)で表されるエポキシ樹脂(a1)及び/又は下記一般式(2)で表されるエポキシ樹脂(a2)を用いると、(A)成分、(B)成分及び(D)成分との反応性が最も適正な状態になることから、(A)成分、(B)成分及び(D)成分の3成分を併用することで得られる、良好な流動性、硬化性及び常温保管性を両立させる効果を、理想的に得ることができる。
本発明の半導体封止用エポキシ樹脂組成物に用いられるフェノール樹脂系硬化剤(B)全体の配合割合としては、特に限定されないが、全樹脂組成物中に、0.5質量%以上、12質量%以下であることが好ましく、1質量%以上、9質量%以下であることがより好ましい。フェノール樹脂系硬化剤(B)の配合割合が上記下限値以上であると、流動性の低下等を引き起こす恐れが少ない。また、フェノール樹脂系硬化剤(B)の配合割合が上
記上限値以下であると、耐半田性の低下等を引き起こす恐れが少ない。
を表し、互いに同一であっても異なっていてもよく、R8とR9が結合して環状構造となっていてもよい。)
ム化合物とシラン化合物との付加物等のリン原子含有化合物;1,8−ジアザビシクロ(5,4,0)ウンデセン−7、ベンジルジメチルアミン、2−メチルイミダゾール等の窒素原子含有化合物が挙げられる。
なお、実施例、比較例で用いたホスホニウムチオシアネート(d1)及びホスフィン化合物とキノン化合物との付加物(d2)の内容について以下に示す。
エポキシ樹脂1:下記式(10)で表される化合物を主成分とするビフェニル型エポキシ樹脂(ジャパンエポキシレジ
ン(株)製、YX−4000HK。エポキシ当量191、融点105℃。)
4.68質量部
溶融球状シリカ2(平均粒径0.5μm、最大粒径75μm、比表面積6.0m2/g、アドマテックス(株)製、商品名SO−C2) 10.0質量部
テトラフェニルホスホニウムチオシアネート 0.12質量部
下記式(9)で表される硬化促進剤 0.12質量部
N−フェニル−γ−アミノプロピルトリメトキシシラン(信越化学(株)製、商品名KBM−573) 0.2質量部
γ−グリシドキシプロピルトリメトキシシラン(信越化学工業(株)製、商品名KBM−403) 0.2質量部
酸化ポリエチレンワックス(クラリアントジャパン(株)製、商品名セリダスト3719) 0.2質量部
カーボンブラック(三菱化学(株)製、商品名MA−600) 0.2質量部
をミキサーにて混合し、熱ロールを用いて、95℃で8分間溶融混練して冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を、以下の方法で評価した。結果を表1に示す。
スパイラルフロー:低圧トランスファー成形機(コータキ精機(株)製、KTS−15)を用いて、ANSI/ASTM D 3123−72に準じたスパイラルフロー測定用金型に、金型温度175℃、注入圧力6.9MPa、保圧時間120秒の条件で、エポキ
シ樹脂組成物を注入し、流動長を測定した。スパイラルフローは、流動性のパラメータであり、数値が大きい方が、流動性が良好である。単位はcm。
VPS型)を用い、175℃にてエポキシ樹脂組成物の硬化トルクを経時的に測定し、測定開始60秒後の硬化トルク値、300秒後までの最大硬化トルク値を求め、60秒後の硬化トルク値を300秒後までの最大硬化トルク値で除した値(硬化トルク比)で示した。速硬化性という観点では、この値の大きい方が良好である。単位は%
を注入して半導体素子(シリコンチップ)が搭載されたリードフレーム等を封止成形し、256ピンLQFP(Cuフレーム、パッケージ外寸28mm×28mm×1.4mm厚、パッドサイズ9.5mm×9.5mm、チップサイズ7.0mm×7.0mm×350μm厚)を作製した後、175℃、8時間で後硬化し、得られたパッケージを85℃、相対湿度60%で72時間加湿処理後、260℃のIRリフロー処理を行った。評価したパッケージの数は10個。半導体素子とエポキシ樹脂組成物の硬化物との界面の密着状態を超音波探傷装置(日立建機ファインテック(株)製、mi−scope hyper II)により観察し、剥離、クラックのいずれか一方でも発生したものを不良パッケージとした。表には10個中の不良パッケージ数を示す。
表1の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を得て、実施例1と同様にして評価した。結果を表1に示す。
実施例1以外で用いた原材料を以下に示す。
エポキシ樹脂2:下記式(13)で表される化合物を主成分とするビスフェノールF型エポキシ樹脂(新日鐵化学(株)、YSLV−80XY。エポキシ当量190、融点80℃。)
2 ダイボンド材硬化体
3 ダイパッド
4 ボンディングワイヤー
5 リードフレーム
6 半導体封止用エポキシ樹脂組成物の硬化体
Claims (3)
- (A)下記一般式(1)で表されるエポキシ樹脂(a1)及び/又は下記一般式(2)で表されるエポキシ樹脂(a2)を含むエポキシ樹脂、
(B)下記一般式(3)で表されるフェノール樹脂系硬化剤(b1)及び下記一般式(4)で表されるフェノール樹脂系硬化剤(b2)を含むフェノール樹脂系硬化剤、
(C)無機充填材、
(D)ホスホニウムチオシアネート(d1)及びホスフィン化合物とキノン化合物との付加物(d2)を含む硬化促進剤、
を含み、
前記無機充填材(C)の含有割合が全エポキシ樹脂組成物中に88質量%以上、92質量%以下であることを特徴とする半導体封止用エポキシ樹脂組成物。
- 前記ホスホニウムチオシアネート(d1)と、前記ホスフィン化合物とキノン化合物との付加物(d2)との質量比W(d1)/W(d2)が1/3から3/1までの範囲であることを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 請求項1又は請求項2に記載の半導体封止用エポキシ樹脂組成物の硬化物により半導体素子が封止されていることを特徴とする半導体装置。
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