JP5525674B2 - チャネル数を低減するための再構成可能なリニアセンサアレイ - Google Patents
チャネル数を低減するための再構成可能なリニアセンサアレイ Download PDFInfo
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- 239000011159 matrix material Substances 0.000 claims description 31
- 238000002604 ultrasonography Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 238000011835 investigation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 20
- 239000000523 sample Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 238000005459 micromachining Methods 0.000 description 14
- 238000003491 array Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000004422 calculation algorithm Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000012285 ultrasound imaging Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000001934 delay Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008672 reprogramming Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
- G01N29/0609—Display arrangements, e.g. colour displays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
- G01N29/0654—Imaging
- G01N29/069—Defect imaging, localisation and sizing using, e.g. time of flight diffraction [TOFD], synthetic aperture focusing technique [SAFT], Amplituden-Laufzeit-Ortskurven [ALOK] technique
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
- G01N29/245—Ceramic probes, e.g. lead zirconate titanate [PZT] probes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/028—Microscale sensors, e.g. electromechanical sensors [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/10—Number of transducers
- G01N2291/106—Number of transducers one or more transducer arrays
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Transducers For Ultrasonic Waves (AREA)
Description
deposited films)に限定されるサーフェスマイクロマシニングである。本明細書で用いられるマイクロマシニングの定義は、従来または既知のマイクロマシニング加工可能な材料を使用することを含み、そのような材料として、シリコン、サファイア、すべてのタイプのガラス材料、ポリマ(ポリイミドなど)、ポリシリコン、窒化シリコン、酸窒化シリコン、アルミニウム合金、銅合金、タングステンなどの薄膜金属、スピンオングラス(SOG)、埋込型ドーパントまたは拡散ドーパント、シリコン酸化物やシリコン窒化物などの成長膜などがある。
また、図16に示されるように、独立した基板(たとえば、ウェハ)にcMUTを作成し、それらを個別にASICスイッチマトリックスに接続することも可能である。ここでは、たとえば、はんだバンプ64と導電パッド65、66とを用いて、個々のcMUT音響サブエレメント32をそれらのインターフェース電子回路50に接続している。ACF(異方性導電フィルム)やフレキシブルインターコネクトなど、他のパッケージング手法も用いることが可能である。
これまで説明した、本発明の各種実施形態は、マイクロマシニング加工によって作成されたセンサエレメントのリニアアレイについて、必要なチャネル数を低減するために再構成可能性を用いる。1つの方法は、アレイを、受信時の深度に応じて動的に再構成させる方法である。送信波面が放射されると、しばらくの間(通常は200ミリ秒未満)、エコーデータが受信される。この受信の間に、伝搬する送信波面の位置に対してビーム形成を最適化するために、アパーチャの次元を変更するのが有利である。このケースは、場の深度の全体で分解能が均一になるように、アパーチャのサイズを大きくすることが可能である。これには複雑な電子回路が必要だが、再構成可能性の最大級の便益が得られる。これによって、より少ないチャネルで、遅延誤差を、標準的な固定ピッチリニアアレイと同等にすることが可能になる。
4 基板
6 絶縁支持体
8 メンブレン
10 電極
12 電極
14 キャビティ
16 サブエレメント
18 CMOSウェハ
20 超音波トランスデューサエレメント
22 サブ領域
24 サブ領域
26 サブ領域
28 マルチプレクサ
30 アクセススイッチ
30a アクセススイッチ
30b アクセススイッチ
30c アクセススイッチ
32 音響サブエレメント
32a 音響サブエレメント
32b 音響サブエレメント
32c 音響サブエレメント
34a アクセス線
34b アクセス線
34c アクセス線
36a マトリックススイッチ
36b マトリックススイッチ
36c マトリックススイッチ
40 エレメント
42 エレメント
44 音響サブエレメント
46 エレメント
48 音響サブエレメント
50 インターフェース電子回路セル
52 スイッチ制御回路
54 プログラミング回路
56 単一バイア
58 システムチャネル
62 音響裏打ち層
64 はんだバンプ
65 導電パッド
66 導電パッド
Claims (3)
- 複数の焦点ゾーンに超音波ビームを送信し、調査対象からの反射ビームを受信する超音波トランスデューササブエレメント(32)のリニアアレイと、
選択的にオンにされたときに、超音波トランスデューササブエレメント同士を選択的に電気的に結合して、それぞれがアパーチャに対応する複数の超音波トランスデューサエレメントを形成するように配置された、多数のマトリックススイッチ(36)と、
実質的に前記リニアアレイと平行に伸びている、多数の導電性アクセス線(34)と、
選択的にオンにされたときに、超音波トランスデューササブエレメントとアクセス線とを選択的に電気的に結合するように配置された、多数のアクセススイッチ(30)と、
多数のシステムチャネル(58)と、
マルチプレクサ(28)であって、前記各アクセス線が前記マルチプレクサを介して、それぞれの、前記システムチャネルの1つに電気的に結合される状態を有するマルチプレクサ(28)と、
前記アクセススイッチの1つの状態と、それぞれの、前記マトリックススイッチの1つの状態とを制御して、前記複数の超音波トランスデューサエレメントのサイズおよび隣接する超音波トランスデューサエレメントの間隔を前記複数の焦点ゾーンの焦点深度の関数として動的に変化させる手段と、
を備え、
前記動的な変化は、各チャネルの最大遅延誤差が等しくなるようにアパーチャを分割することを含み、
前記各超音波トランスデューササブエレメント(32)が、それぞれの多数の電気的に接続された、スイッチによる接続解除ができないcMUTセルを含むシステム。 - 多数のスイッチ状態制御回路であって、前記各スイッチ状態制御回路が、それぞれの、前記アクセススイッチの1つの状態と、それぞれの、前記マトリックススイッチの1つの状態とを制御する、多数のスイッチ状態制御回路と
選択されたスイッチ構成に従って前記スイッチ状態制御回路をプログラムするために電気的に接続されたプログラミング回路とを含む、請求項1記載のシステム。 - 第1の時間間隔の間に、センササブエレメントがアクセス線に結合されて、第1の受信アパーチャを構成する、センサエレメントの第1のセットが形成され、前記第1の時間間隔に続く第2の時間間隔の間に、センササブエレメントがアクセス線に結合されて、前記第1の受信アパーチャと異なる第2の受信アパーチャを構成する、センサエレメントの第2のセットが形成されるように、前記プログラミング回路が前記スイッチ状態制御回路をプログラミングする、請求項2記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/018,238 US7443765B2 (en) | 2003-03-06 | 2004-12-21 | Reconfigurable linear sensor arrays for reduced channel count |
US11/018,238 | 2004-12-21 |
Publications (2)
Publication Number | Publication Date |
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JP2006175208A JP2006175208A (ja) | 2006-07-06 |
JP5525674B2 true JP5525674B2 (ja) | 2014-06-18 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2005302672A Active JP5525674B2 (ja) | 2004-12-21 | 2005-10-18 | チャネル数を低減するための再構成可能なリニアセンサアレイ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7443765B2 (ja) |
JP (1) | JP5525674B2 (ja) |
KR (1) | KR101236118B1 (ja) |
CN (1) | CN100555695C (ja) |
DE (1) | DE102005049631A1 (ja) |
Families Citing this family (60)
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-
2004
- 2004-12-21 US US11/018,238 patent/US7443765B2/en active Active
-
2005
- 2005-10-14 DE DE102005049631A patent/DE102005049631A1/de not_active Withdrawn
- 2005-10-18 JP JP2005302672A patent/JP5525674B2/ja active Active
- 2005-10-20 KR KR1020050099035A patent/KR101236118B1/ko active IP Right Grant
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KR20060071304A (ko) | 2006-06-26 |
US7443765B2 (en) | 2008-10-28 |
CN1794479A (zh) | 2006-06-28 |
KR101236118B1 (ko) | 2013-02-21 |
US20050237858A1 (en) | 2005-10-27 |
DE102005049631A1 (de) | 2006-06-22 |
CN100555695C (zh) | 2009-10-28 |
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