JP5523326B2 - 静電チャックアセンブリ - Google Patents

静電チャックアセンブリ Download PDF

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Publication number
JP5523326B2
JP5523326B2 JP2010529041A JP2010529041A JP5523326B2 JP 5523326 B2 JP5523326 B2 JP 5523326B2 JP 2010529041 A JP2010529041 A JP 2010529041A JP 2010529041 A JP2010529041 A JP 2010529041A JP 5523326 B2 JP5523326 B2 JP 5523326B2
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Japan
Prior art keywords
cooling channel
pack
electrostatic chuck
pattern
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010529041A
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English (en)
Japanese (ja)
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JP2011501418A5 (enExample
JP2011501418A (ja
Inventor
ダグラス エー ジュニア ブッフバーガー
ポール ブリルハート
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2011501418A publication Critical patent/JP2011501418A/ja
Publication of JP2011501418A5 publication Critical patent/JP2011501418A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2010529041A 2007-10-12 2008-10-09 静電チャックアセンブリ Active JP5523326B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/871,807 2007-10-12
US11/871,807 US7649729B2 (en) 2007-10-12 2007-10-12 Electrostatic chuck assembly
PCT/US2008/079357 WO2009049054A1 (en) 2007-10-12 2008-10-09 Electrostatic chuck assembly

Publications (3)

Publication Number Publication Date
JP2011501418A JP2011501418A (ja) 2011-01-06
JP2011501418A5 JP2011501418A5 (enExample) 2013-03-21
JP5523326B2 true JP5523326B2 (ja) 2014-06-18

Family

ID=40533966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010529041A Active JP5523326B2 (ja) 2007-10-12 2008-10-09 静電チャックアセンブリ

Country Status (5)

Country Link
US (1) US7649729B2 (enExample)
JP (1) JP5523326B2 (enExample)
KR (1) KR101135242B1 (enExample)
TW (1) TWI399825B (enExample)
WO (1) WO2009049054A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
KR101681897B1 (ko) 2009-08-07 2016-12-05 어플라이드 머티어리얼스, 인코포레이티드 이중 온도 히터
US8608852B2 (en) * 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
KR101896127B1 (ko) 2010-09-08 2018-09-07 엔테그리스, 아이엔씨. 고 전도성 정전 척
US10595365B2 (en) 2010-10-19 2020-03-17 Applied Materials, Inc. Chamber lid heater ring assembly
WO2013049589A1 (en) * 2011-09-30 2013-04-04 Applied Materials, Inc. Electrostatic chuck with temperature control
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US20130284372A1 (en) * 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
KR20140070049A (ko) * 2012-11-30 2014-06-10 삼성디스플레이 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
KR101986266B1 (ko) * 2013-03-29 2019-06-07 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
US9887121B2 (en) 2013-04-26 2018-02-06 Applied Materials, Inc. Protective cover for electrostatic chuck
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US10079165B2 (en) * 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
US10186444B2 (en) * 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
EP3304584B1 (en) * 2015-06-05 2019-12-04 Watlow Electric Manufacturing Company High thermal conductivity wafer support pedestal device
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11837479B2 (en) 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US20180148835A1 (en) * 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US12381105B2 (en) * 2020-02-20 2025-08-05 Lam Research Corporation Coolant channel with internal fins for substrate processing pedestals
CN115552586A (zh) * 2020-05-25 2022-12-30 日本碍子株式会社 静电卡盘
US11495483B2 (en) * 2020-10-15 2022-11-08 Applied Materials, Inc. Backside gas leakby for bevel deposition reduction
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
TWI772005B (zh) * 2021-04-28 2022-07-21 錼創顯示科技股份有限公司 半導體晶圓承載結構及有機金屬化學氣相沉積裝置
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628991A (en) 1984-11-26 1986-12-16 Trilogy Computer Development Partners, Ltd. Wafer scale integrated circuit testing chuck
JPH0432226A (ja) * 1990-05-29 1992-02-04 Sony Corp ドライエッチング装置
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5423945A (en) 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US5883778A (en) 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
JPH09157846A (ja) 1995-12-01 1997-06-17 Teisan Kk 温度調節装置
US5761023A (en) 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US5754391A (en) 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
US6015761A (en) 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US6107608A (en) 1997-03-24 2000-08-22 Micron Technology, Inc. Temperature controlled spin chuck
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US6276072B1 (en) 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6749814B1 (en) 1999-03-03 2004-06-15 Symyx Technologies, Inc. Chemical processing microsystems comprising parallel flow microreactors and methods for using same
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6320736B1 (en) 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US6466426B1 (en) 1999-08-03 2002-10-15 Applied Materials Inc. Method and apparatus for thermal control of a semiconductor substrate
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
US6853067B1 (en) 1999-10-12 2005-02-08 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US6786982B2 (en) 2000-01-10 2004-09-07 General Electric Company Casting having an enhanced heat transfer, surface, and mold and pattern for forming same
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6524969B2 (en) 2000-10-05 2003-02-25 Applied Materials, Inc. High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
US6716302B2 (en) * 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
DE10221558B4 (de) 2002-05-15 2005-07-21 Krauss-Maffei Kunststofftechnik Gmbh Formenteil, Formwerkzeug und Verfahren zum Spritzgießen von Kunststoffartikeln
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
US20040055709A1 (en) 2002-09-19 2004-03-25 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7221553B2 (en) * 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
KR100557675B1 (ko) * 2003-12-22 2006-03-10 어댑티브프라즈마테크놀로지 주식회사 웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스
TWM264102U (en) * 2004-06-23 2005-05-11 Bing-Wen Tzeng Improvement on cooling structure for mold
US7436645B2 (en) 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7648914B2 (en) 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
JP4869610B2 (ja) * 2005-03-17 2012-02-08 東京エレクトロン株式会社 基板保持部材及び基板処理装置
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP2006245621A (ja) * 2006-06-19 2006-09-14 Hitachi High-Technologies Corp プラズマ処理方法

Also Published As

Publication number Publication date
WO2009049054A1 (en) 2009-04-16
TW200926349A (en) 2009-06-16
US7649729B2 (en) 2010-01-19
JP2011501418A (ja) 2011-01-06
KR101135242B1 (ko) 2012-04-12
TWI399825B (zh) 2013-06-21
KR20090037839A (ko) 2009-04-16
US20090097184A1 (en) 2009-04-16

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