JP5521247B2 - 蛍光体および発光装置 - Google Patents
蛍光体および発光装置 Download PDFInfo
- Publication number
- JP5521247B2 JP5521247B2 JP2010088440A JP2010088440A JP5521247B2 JP 5521247 B2 JP5521247 B2 JP 5521247B2 JP 2010088440 A JP2010088440 A JP 2010088440A JP 2010088440 A JP2010088440 A JP 2010088440A JP 5521247 B2 JP5521247 B2 JP 5521247B2
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- JP
- Japan
- Prior art keywords
- phosphor
- mol
- light emitting
- emitting device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 130
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000011572 manganese Substances 0.000 claims description 56
- 239000011777 magnesium Substances 0.000 claims description 53
- 229910052748 manganese Inorganic materials 0.000 claims description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 229910052749 magnesium Inorganic materials 0.000 claims description 33
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 32
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 22
- 239000007858 starting material Substances 0.000 claims description 10
- 238000005401 electroluminescence Methods 0.000 claims description 7
- 239000011669 selenium Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- 230000005284 excitation Effects 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 5
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical class [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- -1 chalcopyrite compound Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000695 excitation spectrum Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Vessels And Coating Films For Discharge Lamps (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Description
Cu(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
が記載されている。
Cu(Ga(1−y)Aly)(S(1−z2)Sez2)2、(0≦y≦1,0≦z2≦0.6)
であることを特徴とする発光素子を用いることが記載されている。
出発材料にケイ素およびマグネシウムを含有し、
発光中心原子としてマンガンを含み、組成は、
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
であることを特徴とする。
本発明の第1の観点にかかる蛍光体を備えることを特徴とする。
本発明の実施の形態1に係る発光体について説明する。発光体は、出発原料にケイ素およびマグネシウムを含有し、発光中心原子としてマンガンを含み、組成は以下の式で表される。
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
本発明の実施の形態2に係る発光装置について説明する。発光装置は、上述の発光体を備える発光装置全般を指し、形式や種類などは問わず、全ての発光装置を包含する。例えば、発光ダイオード(LED:Light Emitting Diode)素子などの発光素子、エレクトロルミネセンス(EL:Electro Luminescence)素子、冷陰極蛍光ランプや熱陰極蛍光ランプなどの蛍光ランプ、電界放出型表示(FED:Field Emission Display)および真空蛍光表示(VFD:Vacuum Fluorescent Display)を備える各種発光装置を指す。
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
以下、本発明の実施の形態に係る蛍光体の実施例を挙げて説明する。蛍光体は、まず、Cu2S、Al2S3、MnS、SiとMgSを、所定の比率で混合し、更に硫黄を加えて混合し、アルゴン雰囲気中で焼成温度1100℃、焼成温度1時間で焼成して製造したものを用いた。所定の比率とは、蛍光体に含まれるCu、Al、Mn、Si、Mgが、以下の組成に相当するモル比を満たす比率を指す。
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4)
であることを特徴とする蛍光体。
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
であることを特徴とする付記1に記載の蛍光体。
11 紫外LEDチップ
12 リード線
13 パッケージ基板
14 電極
15 キャビティ
16 透明樹脂
17 蛍光体
18 反射板
20 冷陰極蛍光ランプ
21 バルブ
22 口金
23 電極
24 蛍光体膜
25 配線
26 交流電源
30 電界放出型表示装置(FED装置)
31 アノード基板
32 カソード基板
33 カソード電極
34 エミッタ(電子放出素子)
35 アノード電極
36 画素
40 真空蛍光表示装置(VFD装置)
41 基板
42 配線
43 絶縁体層
44 スルーホール
45 アノード
46 蛍光体層
47 グリッド
48 カソード
49 容器
Claims (8)
- 出発材料にケイ素およびマグネシウムを含有し、
発光中心原子としてマンガンを含み、組成は、
(Cu1−zMgz)(Al1−xGax)(S1−ySey)2:Mn,Si、
(0≦x≦0.4,0≦y≦0.4,0.01≦z≦0.2)
であることを特徴とする蛍光体。 - 前記マンガンの含有量は0.1ないし20mol%であることを特徴とする請求項1に記載の蛍光体。
- 前記マンガンの含有量は10mol%であることを特徴とする請求項1または2に記載の蛍光体。
- 前記ケイ素の含有量は2ないし50mol%であることを特徴とする請求項1ないし3のいずれか1項に記載の蛍光体。
- 前記ケイ素の含有量は5ないし30mol%であることを特徴とする請求項1ないし4のいずれか1項に記載の蛍光体。
- 前記ケイ素の含有量は20mol%であることを特徴とする請求項1ないし5のいずれか1項に記載の蛍光体。
- 請求項1ないし6のいずれか1項に記載の蛍光体を備えることを特徴とする発光装置。
- 前記発光装置は、発光ダイオード(LED:Light Emitting Diode)素子、エレクトロルミネセンス(EL:Electro Luminescence)素子、冷陰極蛍光ランプ、熱陰極蛍光ランプ、電界放出型表示(FED:Field Emission Display)または真空蛍光表示(VFD:Vacuum Fluorescent Display)のいずれかであることを特徴とする請求項7に記載の発光装置。
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JP2010088440A JP5521247B2 (ja) | 2010-04-07 | 2010-04-07 | 蛍光体および発光装置 |
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---|---|
JP2011219570A JP2011219570A (ja) | 2011-11-04 |
JP5521247B2 true JP5521247B2 (ja) | 2014-06-11 |
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US9641666B2 (en) * | 2012-02-03 | 2017-05-02 | Nec Corporation | Terminal device, processing method, and program |
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JPH04206882A (ja) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 半導体素子 |
JP4330172B2 (ja) * | 2007-03-26 | 2009-09-16 | Necライティング株式会社 | 蛍光体及びこれを用いた発光装置 |
JP5130996B2 (ja) * | 2008-03-28 | 2013-01-30 | Tdk株式会社 | 発光素子 |
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