JP5517315B2 - 電流センサ - Google Patents
電流センサ Download PDFInfo
- Publication number
- JP5517315B2 JP5517315B2 JP2012541791A JP2012541791A JP5517315B2 JP 5517315 B2 JP5517315 B2 JP 5517315B2 JP 2012541791 A JP2012541791 A JP 2012541791A JP 2012541791 A JP2012541791 A JP 2012541791A JP 5517315 B2 JP5517315 B2 JP 5517315B2
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- JP
- Japan
- Prior art keywords
- layer
- current sensor
- magnetic field
- hard bias
- permanent magnet
- Prior art date
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- 230000005291 magnetic effect Effects 0.000 claims description 159
- 230000000694 effects Effects 0.000 claims description 80
- 230000005294 ferromagnetic effect Effects 0.000 claims description 55
- 230000005415 magnetization Effects 0.000 claims description 24
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 186
- 238000001514 detection method Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y5/00—Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B3/00—Recording by mechanical cutting, deforming or pressing, e.g. of grooves or pits; Reproducing by mechanical sensing; Record carriers therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Description
eff Hk=2(K・t1+K・t2)/(Ms・t1−Ms・t2) 式(1)
Claims (7)
- 特定の方向に感度軸を持つストライプ形状を有する磁気抵抗効果素子を具備する電流センサであって、
前記磁気抵抗効果素子は、前記ストライプ形状の長手方向において互いに離間して設けられた複数の素子部と、前記各素子部間にそれぞれ設けられた複数の永久磁石部とを有し、
前記素子部は、外部磁界に対して磁化方向が変動するフリー磁性層、非磁性中間層、及び磁化方向が固定された強磁性固定層、の積層構造を有し、
前記永久磁石部は、前記フリー磁性層にバイアス磁界を印加するハードバイアス層、及び前記ハードバイアス層を覆うように設けられ隣接する前記素子部間を電気的に接続する電極層、を有することを特徴とする電流センサ。 - 前記永久磁石部の前記ハードバイアス層と前記素子部の前記フリー磁性層との間に設けられる下地層を備えたことを特徴とする請求項1記載の電流センサ。
- 前記永久磁石部のハードバイアス層が、前記磁気抵抗効果素子の前記素子部における前記強磁性固定層、前記非磁性中間層、及び前記フリー磁性層を除去した領域に設けられたことを特徴とする請求項1又は請求項2記載の電流センサ。
- 前記磁気抵抗効果素子は、前記ストライプ形状の長手方向が互いに平行になるように配置された複数の帯状の長尺パターンが折り返してなる形状を有することを特徴とする請求項1から請求項3のいずれかに記載の電流センサ。
- 前記磁気抵抗効果素子は、ストライプ幅が2μm〜9μmの範囲であることを特徴とする請求項1から請求項4のいずれかに記載の電流センサ。
- 前記素子部を挟んで設けられた前記永久磁石部のハードバイアス層の間隔が、1μmから50μmの範囲であることを特徴とする請求項1から請求項5のいずれかに記載の電流センサ。
- 前記磁気抵抗効果素子の前記強磁性固定層が、反平行結合膜を介して第1の強磁性膜と第2の強磁性膜とを反強磁性的に結合させてなるセルフピン止め型であることを特徴とする請求項1から請求項6のいずれかに記載の電流センサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012541791A JP5517315B2 (ja) | 2010-11-01 | 2011-10-07 | 電流センサ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010245291 | 2010-11-01 | ||
JP2010245291 | 2010-11-01 | ||
JP2012541791A JP5517315B2 (ja) | 2010-11-01 | 2011-10-07 | 電流センサ |
PCT/JP2011/073220 WO2012060181A1 (ja) | 2010-11-01 | 2011-10-07 | 電流センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012060181A1 JPWO2012060181A1 (ja) | 2014-05-12 |
JP5517315B2 true JP5517315B2 (ja) | 2014-06-11 |
Family
ID=46024301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012541791A Active JP5517315B2 (ja) | 2010-11-01 | 2011-10-07 | 電流センサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US9229032B2 (ja) |
JP (1) | JP5517315B2 (ja) |
WO (1) | WO2012060181A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002071775A (ja) * | 2000-08-31 | 2002-03-12 | Yamaha Corp | 磁気センサ |
JP2005310264A (ja) * | 2004-04-21 | 2005-11-04 | Tdk Corp | 薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
WO2009084433A1 (ja) * | 2007-12-28 | 2009-07-09 | Alps Electric Co., Ltd. | 磁気センサ及び磁気センサモジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0875901B1 (en) * | 1997-04-28 | 2006-08-09 | Canon Kabushiki Kaisha | Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory |
US6519124B1 (en) * | 2000-03-27 | 2003-02-11 | Tdk Corporation | Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide |
US6512660B1 (en) * | 2000-08-07 | 2003-01-28 | Tdk Corporation | Current perpendicular-to-the-plane magnetoresistance read head with longitudinal or transverse bias provided by current |
US6885527B1 (en) * | 2000-10-26 | 2005-04-26 | Headway Technologies, Inc. | Process to manufacture a top spin valve |
JP2006066821A (ja) | 2004-08-30 | 2006-03-09 | Yamaha Corp | 磁気抵抗効果素子を備えた磁気センサ |
US8130474B2 (en) * | 2005-07-18 | 2012-03-06 | Hitachi Global Storage Technologies Netherlands B.V. | CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation |
JP4810275B2 (ja) | 2006-03-30 | 2011-11-09 | アルプス電気株式会社 | 磁気スイッチ |
JP5066580B2 (ja) | 2007-12-28 | 2012-11-07 | アルプス電気株式会社 | 磁気センサ及び磁気センサモジュール |
JP5210983B2 (ja) | 2009-06-26 | 2013-06-12 | アルプス電気株式会社 | 地磁気センサ |
US20110007426A1 (en) * | 2009-07-13 | 2011-01-13 | Seagate Technology Llc | Trapezoidal back bias and trilayer reader geometry to enhance device performance |
JP5012939B2 (ja) * | 2010-03-18 | 2012-08-29 | Tdk株式会社 | 電流センサ |
-
2011
- 2011-10-07 JP JP2012541791A patent/JP5517315B2/ja active Active
- 2011-10-07 WO PCT/JP2011/073220 patent/WO2012060181A1/ja active Application Filing
-
2013
- 2013-04-03 US US13/856,345 patent/US9229032B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002071775A (ja) * | 2000-08-31 | 2002-03-12 | Yamaha Corp | 磁気センサ |
JP2005310264A (ja) * | 2004-04-21 | 2005-11-04 | Tdk Corp | 薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置 |
WO2009084433A1 (ja) * | 2007-12-28 | 2009-07-09 | Alps Electric Co., Ltd. | 磁気センサ及び磁気センサモジュール |
Also Published As
Publication number | Publication date |
---|---|
US20130221998A1 (en) | 2013-08-29 |
JPWO2012060181A1 (ja) | 2014-05-12 |
US9229032B2 (en) | 2016-01-05 |
WO2012060181A1 (ja) | 2012-05-10 |
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