JP5513986B2 - 光起電性エレクトロクロミック装置およびその製造方法 - Google Patents
光起電性エレクトロクロミック装置およびその製造方法 Download PDFInfo
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- JP5513986B2 JP5513986B2 JP2010118839A JP2010118839A JP5513986B2 JP 5513986 B2 JP5513986 B2 JP 5513986B2 JP 2010118839 A JP2010118839 A JP 2010118839A JP 2010118839 A JP2010118839 A JP 2010118839A JP 5513986 B2 JP5513986 B2 JP 5513986B2
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- thin film
- solar cell
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Images
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H01L31/0264—Inorganic materials
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Description
図4Aと図4Bと図5とは、この発明の第1実施形態にかかる光起電性エレクトロクロミック装置のエレクトロクロミック薄膜を製造するための手順を示す概略的な断面図である。
光電メッキプロセスのためのVocの必要条件の決定。10mMのK3Fe(CN)6が50mlの脱イオン水(DI(deionized)-water)に加えられるとともに、10mMのFcCl3および10mMのKCLがDIウォーターに加えられて、2つの溶液が得られる。この2つの溶液が容量比1:1で混ぜられる。次に、Autolab TGSTAT30電気化学分析器が使用されてプルシアンブルー薄膜の定電流電着(galvanostatic electrodeposition)を実施する。対向電極(または、対極)がプラチナであるとともに、参考電極がAg/AgClである。0.014mA/cm 2および0.007 mA/cm 2の定電流がそれぞれ入力されてプルシアンブルー薄膜が形成される。走査範囲が図13および図14に示される。図面に基づいて、プルシアンブルー薄膜の電着は、0.8-0.95ボルトの範囲である。従って、もしシリコン薄膜太陽電池が使用されてプルシアンブルー膜を電気メッキする場合、Voc値の必要条件は、約0.8-0.95ボルトである。
光電メッキがソーラーシミュレーターにより実施される。先ず、10mMのK3Fe(CN)6が50mlの脱イオン水(DI-water)に加えられるとともに、10mMのFcCl3および10mMのKClがDIウォーターに加えられて、2つの溶液が得られる。この2つの溶液が容量比1:1で混ぜられる。同時に、5cm×5cmの第1透明基板が提供される。溶液、即ち、前記した2つの溶液の混合体が第1透明基板上に塗布される。さらに、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板上に被覆される。シリコン薄膜太陽電池がアレイ状に形成されるとともに、各アレイが0.25cm 2面積を有する。シリコン薄膜太陽電池の開路電圧Vocが0.933V、電流密度Jscが0.0123 A/cm 2、FFが73.03%、Pmaxが2.1mWおよび効率が8.37%である。シリコン薄膜太陽電池の光電変換特性が図15のIVカーブにより表される。前述した光起電性エレクトロクロミック装置が照射のためにPeccell Pec-L11ソーラーシミュレーター中に置かれる。5分間で、電気メッキ溶液のカソード光電沈積がシリコン薄膜太陽電池のカソード下方で起こるとともに、カソードの色彩が次第にライトブルーに変化する。水で洗われた後、ライトブルー薄膜がカソード上に残り、プルシアンブルー薄膜がカソードの表面にメッキされたことを証明する。
光電メッキが太陽光のもとで実施される。4.55mlの0.1Mのアニリンモノマーおよび10.1mlの2MのHCl(37%)がDIウォーターへ加えられて全体で50mlのアニリン電気メッキ溶液が得られる。次に、5cm×5cmの第1透明基板が提供されるとともに、アニリン溶液が第1透明基板に塗布される。さらに、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板を被覆するように配置される。前記したシリコン薄膜太陽電池がアレイ状に形成されるとともに、各アレイが0.25cm 2の面積を有する。シリコン薄膜太陽電池の開路電圧Vocが0.933V、電流密度Jscが0.0123 A/cm 2、FFが73.03%、Pmaxが2.1mWおよび効率が8.37%である。シリコン薄膜太陽電池が太陽光により照射される時、5分間で、アニリンモノマーのアノード光電沈積がシリコン薄膜太陽電池のアノード下方で起こる。アノードの色彩が次第に透明から黄緑に変化し、ポリアニリン薄膜の存在を表す。光電メッキの時間が増大すれば、薄膜がより厚くなるとともに、アノードの色彩が緑に変わる。
光電メッキが太陽光のもとで実施される。53μlの0.01M 3,4-エチレンジオキシチオフェン(EDOT)モノマーおよび530mgの0.1M LiClO4が50mlのアセトニトリルへ加えられて、EDOT電気メッキ溶液が得られる。そして、5cm×5cmの第1透明基板が提供されるとともに、EDOT溶液が第1透明基板に塗布される。さらに、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板を被覆するように配置される。前記したシリコン薄膜太陽電池がアレイ状に形成されるとともに、各アレイが0.25cm 2の面積を有する。シリコン薄膜太陽電池の開路電圧Vocが1.57V、電流密度Jscが7.12mA/cm 2、FFが59.16%、Pmaxが1.6mWおよび効率が6.62%である。シリコン薄膜太陽電池の光電変換特性が図16のIVカーブにより表される。シリコン薄膜太陽電池が太陽光によって照射される時、10分間で、EDOTモノマーのアノード光電メッキ沈積がシリコン薄膜太陽電池のアノード下方で起こる。アノードの色彩が次第に透明からライトブルーに変化し、それがEDOT薄膜の色彩を表す。
光電メッキがソーラーシミュレーター中で実施される。53μlの0.01M EDOTモノマーおよび530mgの0.1M LiClO4が50mlのアセトニトリルへ加えられて、EDOT電気メッキ溶液が得られる。そして、5cm×5cmの第1透明基板が提供されるとともに、EDOT溶液が第1透明基板に塗布される。さらに、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板を被覆するように配置される。シリコン薄膜太陽電池がアレイ状に形成されるとともに、各アレイが0.25cm 2の面積を有する。シリコン薄膜太陽電池の開路電圧Vocが1.58V、電流密度Jscが6.86mA/cm 2、FFが58.69%、Pmaxが1.59mWおよび効率が6.38%である。前述した光起電性エレクトロクロミック装置が照射のためにPeccell Pec-L11ソーラーシミュレーター中に置かれる。10分間で、EDOTモノマーのアノード光電メッキ沈積がシリコン薄膜太陽電池のアノード下方で起こるとともに、アノードの色彩が次第に透明からライトブルーに変化する。
光電メッキがソーラーシミュレーター中で実施される。9.1mlの0.01M アニリンモノマーおよび20.2mlの2M HCl(37%)が加えられて総量61.7mlのアニリン電気メッキ溶液を得る。そして、5cm×5cmの第1透明基板が提供されるとともに、アニリン溶液が第1透明基板に塗布される。さらに、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板を被覆するように配置される。シリコン薄膜太陽電池がストライプ状に形成されるとともに、各ストライプが1×5cm 2の面積を有する。シリコン薄膜太陽電池の開路電圧Vocが0.92V、電流密度Jscが14.01mA/cm 2、FFが54.89%、Pmaxが35.3mWおよび効率が7.07%である。シリコン薄膜太陽電池の光電変換特性が図17のIVカーブにより表される。各ストライプの間隔が0.5cmである。前述した光起電性エレクトロクロミック装置が照射のためにPeccell Pec-L11ソーラーシミュレーター中に置かれる。5分間で、アニリンモノマーのアノード光電沈積がシリコン薄膜太陽電池のアノード下方で起こるとともに、アノードの色彩が次第に透明から黄緑に変化する。
光電メッキがソーラーシミュレーター中で実施される。ニッケルオキシハイドロキシド(Nikel oxyhydroxide;NiOOH)薄膜が0.005 MのNiSO4.6H2Oおよび0.015 Mの(NH4)2SO4 pH>8未満を調製することにより導かれる。そして、5cm×5cmの第1透明基板が提供されるとともに、溶液が第1透明基板に塗布される。
実験1は、光起電性エレクトロクロミック装置の酸化還元反応の特性を試験するものである。0.1Mのテトラブチルアンモニウム テトラフルオロホウ塩酸(tetrabutylammoniumtetrafluoroborate;TBABF4)が100mlのプロピレンカーボネイト溶剤中に溶解される。手順5の結果が作業電極として使用されるとともに、Autolab PGSTAT30電気化学分析器がサイクリックボルタモグラム(cyclic voltammogram;CV)カーブ走査を実施するために使用される。対向電極がプラチナであるとともに、参考電極がAg/AgClである。走査範囲を図18に示す。CVカーブ走査を描く曲線が、PEDOT薄膜(ポリEDOT薄膜)の色彩(即ち、この発明のエレクトロクロミック薄膜)が青みがかった色彩に変わり、酸化状態において次第に透明へ戻ることを示している。試験の結果が、PEDOT(ポリEDOT)が薄膜太陽電池により光電メッキでき、かつCV循環運動(cycling)により色彩が変えられる材料であることを証明する。
実験2は、光起電性エレクトロクロミック装置の酸化還元反応の特性を試験するものである。0.1MのTBABF4が100mlのプロピレンカーボネイト溶剤中に溶解される。そして、手順6の結果が作業電極として使用され、かつAutolab PGSTAT30電気化学分析器がCVカーブ走査を実施するために使用される。対向電極がプラチナであるとともに、参考電極がAg/AgClである。走査範囲を図19に示す。CVカーブ走査を描く曲線が、ポリアニリン薄膜の色彩(即ち、この発明のエレクトロクロミック薄膜)が酸化状態において黄緑から緑に変わり、還元状態において次第に黄緑へ戻ることを示している。試験の結果が、ポリアニリンが薄膜太陽電池により光電メッキでき、かつCV循環運動により色彩が変えられる材料であることを証明する。
実験3は、光電メッキおよびソーラーシミュレーターの照射のもとでの色彩変化を試験するものである。9.1mlの0.1M アニリンモノマーおよび20.2mlの2MHCl(37%)が61.7mlのDIウォーターに加えられてアニリン電気メッキ溶液を得る。そして、そして、5cm×5cmの第1透明基板が提供されるとともに、アニリン溶液が第1透明基板に塗布される。また、その上に形成されたシリコン薄膜太陽電池を有する5cm×5cmの第2透明基板が第1透明基板を被覆するように配置される。シリコン薄膜太陽電池がストライプ状に形成されるとともに、各ストライプが1×5cm 2の面積を有する。シリコン薄膜太陽電池の開路電圧Vocが0.92V、電流密度Jscが14.01mA/cm 2、FFが54.89%、Pmaxが35.3mWおよび効率が7.07%である。各ストライプの間隔が0.5cmである。前述した光起電性エレクトロクロミック装置が照射のためにPeccell Pec-L11ソーラーシミュレーター中に置かれる。5分間で、アノード光電沈積がシリコン薄膜太陽電池のアノード下方で起こるとともに、アノードの色彩が次第に透明から黄緑に変化する。
実験4は、照射下の光起電性エレクトロクロミック装置の着色/漂白(color/bleach)変化を試験するものである。実験3から得られる光起電性エレクトロクロミック装置の光学透過率は、UV−VIS−NIR分光光度計(Perkin Elmer Lambda 750)を使用して波長範囲400-800nmで計測したものである。ソーラーシミュレーターによる照射後/前の光起電性エレクトロクロミックの着色/漂白状態変化の量が図20に示される。その結果が、ポリアミン薄膜の色彩コントラストが30%を超えることを示す。
実験5は、ソーラーシミュレーターの照射下の光電メッキおよび色彩変化を試験するものである。ニッケルオキシハイドロキシド薄膜の電着が0.005 MのNiSO4.6H2Oおよび0.015 Mの(NH4)2SO4 pH>8未満を調製することにより導かれる。そして、5cm×5cmの第1透明ガラス基板が提供されるとともに、溶液が第1透明ガラス基板に塗布される。
実験6は、直列接続された薄膜太陽電池モジュールを使用するソーラーシミュレーターの照射下の光電メッキおよび色彩変化を試験するものである。ポリアニリン薄膜の電着が、61.7mlのDIウォーターへ加えられる、9.1mlの0.1M アニリンモノマーおよび20.2mlの2MHCl(37%)を調製することによって、アニリン電気メッキ溶液を得る。そして、5cm×5cmの第1透明基板が提供されるとともに、溶液が第1透明基板に塗布される。
402,1102,1302 薄膜太陽電池
404,1104,1304,2000,2100 アノード
406,1106,1306 光電変換層
408,1108,1308,2002,2102 カソード
410,600 電気メッキ溶液
500,1110 エレクトロクロミック薄膜
700,1112,1200 電解質層
702,802,1114,1202 透明非導電性基板
704,804,1116,1204 反射膜
706 保護膜
800 固体電解質
2004,2104 出力スイッチレイアウト
2200 DC/ACインバーター
2202 商用電気(AC)
2300 DC電荷蓄電装置
2400 薄膜トランジスター
Claims (29)
- 光起電性エレクトロクロミック装置であり、少なくとも
透明基板と、
前記透明基板上に形成される少なくとも1つの薄膜太陽電池であり、そのうち、薄膜太陽電池がアノードと光電変換層とカソードとを少なくとも含むとともに、前記アノードの表面の一部が前記光電変換層から露出され、前記薄膜太陽電池では、前記透明基板に、前記アノードと、前記光電変換層と、前記カソードとが、順に積層されている、少なくとも1つの薄膜太陽電池と、
前記薄膜太陽電池の前記カソードの表面および前記アノードの露出された表面のうちの少なくとも1つの表面に配置される少なくとも1つのエレクトロクロミック薄膜と、
前記エレクトロクロミック薄膜及び前記薄膜太陽電池を完全に被覆する電解質層と
を備える光起電性エレクトロクロミック装置。 - 前記エレクトロクロミック薄膜の構成物が、導電性ポリマー、遷移金属酸化物、遷移金属またはプルシアンブルーを含む、請求項1記載の光起電性エレクトロクロミック装置。
- 前記遷移金属酸化物が、WO3,MoO3,V2O5,Nb2O5,NiO,SnO,Fe2O3,CoO,Ir2O3,Rh2O3およびMnO2からなるグループから選択されるものである、請求項2記載の光起電性エレクトロクロミック装置。
- 前記遷移金属が、Mn,Mg,Co,Cu,Ni,Zn,V,Cr,Fe,Bi,Sb,Au,Zn,Pt,Ag,Ti,Nb,TeおよびSeよりなる遷移金属のグループから形成された金属、合金、水素化物、カルコゲニドまたはテテル化物から選択される、請求項2記載の光起電性エレクトロクロミック装置。
- 前記薄膜太陽電池が、シリコン薄膜太陽電池、CIGS薄膜太陽電池またはCdTe薄膜太陽電池を含む請求項1または2記載の光起電性エレクトロクロミック装置。
- 前記シリコン薄膜太陽電池が、a−Si薄膜太陽電池、a−Si/mc-Siタンデム薄膜太陽電池、a−Si/a-Siタンデム薄膜太陽電池またはマルチ接合a−Si薄膜太陽電池を含む、請求項5記載の光起電性エレクトロクロミック装置。
- 前記光起電性エレクトロクロミック装置が、複数の薄膜太陽電池を含むとともに、それらが直列に接続され、かつ前記薄膜太陽電池の1つの前記アノードが他の薄膜太陽電池の前記カソードに電気接続される、請求項1〜6のいずれか1項に記載の光起電性エレクトロクロミック装置。
- 前記アノードが前記カソード間に露出され、かつ前記エレクトロクロミック薄膜の遮光領域が前記カソード間のインターバルの幅により決定される、請求項7に記載の光起電性エレクトロクロミック装置。
- 前記薄膜太陽電池が、さらに、前記薄膜太陽電池の前記光電変換層の側壁上に配置される保護膜を含む、請求項1〜8のいずれか1項に記載の光起電性エレクトロクロミック装置。
- 前記電解質層が、固体電解質または液体電解質を含む、請求項1〜9のいずれか1項に記載の光起電性エレクトロクロミック装置。
- 前記透明基板が、ガラス・プラスチックまたはフレキシブル基板を含む、請求項1〜10のいずれか1項に記載の光起電性エレクトロクロミック装置。
- さらに、前記電解質層を被覆する透明非導電性基板を含む、請求項1〜11のいずれか1項に記載の光起電性エレクトロクロミック装置。
- さらに、ミラーを形成するために前記透明非導電性基板の一表面上に配置される反射膜を含む、請求項12記載の光起電性エレクトロクロミック装置。
- さらに、前記薄膜太陽電池により生成された電流を商用電気グリッドに変換するDC/ACインバーターを含む、請求項1〜13のいずれか1項に記載の光起電性エレクトロクロミック装置。
- さらに、前記薄膜太陽電池により生成された前記電流を蓄電するDC電荷蓄電装置を含む、請求項1〜13のいずれか1項に記載の光起電性エレクトロクロミック装置。
- さらに、薄膜太陽電池の前記アノードおよび前記カソードに接続され、薄膜太陽電池および外部回路間のスイッチを制御する薄膜トランジスターを含む、請求項1〜13のいずれか1項に記載の光起電性エレクトロクロミック装置。
- 光起電性エレクトロクロミック装置を製造する方法であり、
透明基板上にアノードと、光電変換層と、カソードとが、順に沈積され、そのうち、薄膜太陽電池が少なくとも1つの前記アノード、前記光電変換層および前記カソードを含むとともに、前記アノードの表面の一部が前記光電変換層から露出されて、少なくとも1つの薄膜太陽電池を形成する工程と、
エレクトロクロミック薄膜を前記カソードの表面および前記アノードの露出された表面のうちの少なくとも1つの表面に沈積する工程と、
前記薄膜太陽電池の表面上に電解質層を形成して前記エレクトロクロミック薄膜を被覆し、そのうち、薄膜太陽電池の前記アノードおよび前記カソードが前記光起電性エレクトロクロミック装置のアノードおよびカソードとしても供される工程と
を備える光起電性エレクトロクロミック装置を製造する方法。 - 前記エレクトロクロミック薄膜を沈積する方法が、
電気メッキ溶液を薄膜太陽電池の前記アノードおよび前記カソードに接触するように配置する工程と、
前記薄膜太陽電池を照射して電流を生成させ、前記電気メッキ溶液中に酸化還元反応を引き起こして、前記アノードおよび前記カソードの少なくとも1つの表面上にエレクトロクロミック薄膜を形成する工程と、
前記電気メッキ溶液を除去する工程と
を含む、請求項17記載の製造方法。 - 前記エレクトロクロミック薄膜を沈積する方法が、電子ビーム蒸着、イオン補助コーティング、反応性および非反応性スッパッタリング、熱蒸着、CVD、プラズマ増速CVDまたは大気圧CVDを含む、請求項17記載の製造方法。
- 前記エレクトロクロミック薄膜の材料が、遷移金属酸化物または遷移金属を含む、請求項17〜19のいずれか1項に記載の製造方法。
- 前記遷移金属酸化物が、WO3,MoO3,V2O5,Nb2O5,NiO,SnO,Fe2O3,CoO,Ir2O3,Rh2O3およびMnO2からなるグループから選択される、請求項20記載の製造方法。
- 前記遷移金属が、Mn,Mg,Co,Cu,Ni,Zn,V,Cr,Fe,Bi,Sb,Au,Zn,Pt,Ag,Ti,Nb,TeおよびSeよりなる遷移金属のグループから形成された金属、合金、水素化物、カルコゲニドまたはテテル化物から選択される、請求項20記載の製造方法。
- 前記薄膜太陽電池が、シリコン薄膜太陽電池、CIGS薄膜太陽電池またはCdTe薄膜太陽電池を含む、請求項17〜22のいずれか1項に記載の製造方法。
- 前記透明基板上に前記薄膜太陽電池を形成する工程が、さらに、保護膜を前記薄膜太陽電池の前記光電変換層の側壁上に形成する工程を含む、請求項17〜23のいずれか1項に記載の製造方法。
- 前記電解質層が、固体電解質または液体電解質を含む、請求項17〜24のいずれか1項に記載の製造方法。
- 前記電解質層を形成する工程が、前記薄膜太陽電池の前記表面上に電解質を連続的に真空沈積する工程を含む、請求項17〜25のいずれか1項に記載の製造方法。
- さらに、透明非導電基板を配置して前記電解質層を被覆する工程を含む、請求項17〜26のいずれか1項に記載の製造方法。
- さらに、前記電解質層を形成した後、ラミネーターまたはオートクレーブによって前記透明基板、前記電解質層および前記透明非導電基板を結合する工程を含む、請求項27に記載の製造方法。
- 前記電解質層を形成する前記工程が、さらに、ラミネーターまたはオートクレーブによって前記透明基板、前記電解質層および前記透明非導電基板を結合する工程を含む、請求項27に記載の製造方法。
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US5384653A (en) * | 1992-11-06 | 1995-01-24 | Midwest Research Institute | Stand-alone photovoltaic (PV) powered electrochromic window |
US5805330A (en) * | 1996-03-15 | 1998-09-08 | Gentex Corporation | Electro-optic window incorporating a discrete photovoltaic device |
US6369934B1 (en) * | 1996-05-30 | 2002-04-09 | Midwest Research Institute | Self bleaching photoelectrochemical-electrochromic device |
US6055089A (en) * | 1999-02-25 | 2000-04-25 | Minnesota Mining And Manufacturing Company | Photovoltaic powering and control system for electrochromic windows |
GB0307975D0 (en) * | 2003-04-05 | 2003-05-14 | Univ Cambridge Tech | Composite structure |
US7618680B2 (en) * | 2005-05-31 | 2009-11-17 | Massachusetts Institute Of Technology | Oxidative chemical vapor deposition of electrically conductive and electrochromic polymers |
-
2009
- 2009-05-25 TW TW098117341A patent/TWI385814B/zh active
-
2010
- 2010-01-19 US US12/689,229 patent/US20100294330A1/en not_active Abandoned
- 2010-02-10 DE DE102010007461.6A patent/DE102010007461B4/de active Active
- 2010-05-24 JP JP2010118839A patent/JP5513986B2/ja active Active
Also Published As
Publication number | Publication date |
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TWI385814B (zh) | 2013-02-11 |
DE102010007461B4 (de) | 2017-04-13 |
DE102010007461A1 (de) | 2010-12-09 |
US20100294330A1 (en) | 2010-11-25 |
JP2010271720A (ja) | 2010-12-02 |
TW201042776A (en) | 2010-12-01 |
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