JP5494936B2 - 面発光型半導体レーザ - Google Patents

面発光型半導体レーザ Download PDF

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Publication number
JP5494936B2
JP5494936B2 JP2009275561A JP2009275561A JP5494936B2 JP 5494936 B2 JP5494936 B2 JP 5494936B2 JP 2009275561 A JP2009275561 A JP 2009275561A JP 2009275561 A JP2009275561 A JP 2009275561A JP 5494936 B2 JP5494936 B2 JP 5494936B2
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JP
Japan
Prior art keywords
layer
refractive index
semiconductor laser
mirror
emitting semiconductor
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Expired - Fee Related
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JP2009275561A
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Japanese (ja)
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JP2010050496A5 (enExample
JP2010050496A (ja
Inventor
理光 望月
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2009275561A priority Critical patent/JP5494936B2/ja
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JP2009275561A 2006-06-27 2009-12-03 面発光型半導体レーザ Expired - Fee Related JP5494936B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009275561A JP5494936B2 (ja) 2006-06-27 2009-12-03 面発光型半導体レーザ

Applications Claiming Priority (3)

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JP2006176372 2006-06-27
JP2006176372 2006-06-27
JP2009275561A JP5494936B2 (ja) 2006-06-27 2009-12-03 面発光型半導体レーザ

Related Parent Applications (1)

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JP2007080820A Division JP4985954B2 (ja) 2006-06-27 2007-03-27 面発光型半導体レーザ

Publications (3)

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JP2010050496A JP2010050496A (ja) 2010-03-04
JP2010050496A5 JP2010050496A5 (enExample) 2010-05-06
JP5494936B2 true JP5494936B2 (ja) 2014-05-21

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Family Applications (1)

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JP2009275561A Expired - Fee Related JP5494936B2 (ja) 2006-06-27 2009-12-03 面発光型半導体レーザ

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JP (1) JP5494936B2 (enExample)
CN (1) CN100536266C (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
CN114122913B (zh) * 2022-01-29 2022-04-19 苏州长光华芯光电技术股份有限公司 一种高亮度高功率半导体发光器件及其制备方法
CN120320158B (zh) * 2025-06-17 2025-08-22 杭州开幕光子技术有限公司 半导体激光器、光发射组件及光模块

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
JP3152812B2 (ja) * 1993-09-16 2001-04-03 株式会社東芝 半導体発光装置
JPH0794827A (ja) * 1993-09-21 1995-04-07 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
JPH07326813A (ja) * 1994-05-31 1995-12-12 Gijutsu Kenkyu Kumiai Shinjiyouhou Shiyori Kaihatsu Kiko 光スイッチ
JPH11220206A (ja) * 1998-01-30 1999-08-10 Furukawa Electric Co Ltd:The 多波長面発光半導体レーザ装置の製造方法
JP2000058958A (ja) * 1998-08-06 2000-02-25 Nippon Telegr & Teleph Corp <Ntt> 多波長面発光半導体レーザアレイ
JP3566902B2 (ja) * 1999-09-13 2004-09-15 古河電気工業株式会社 面発光半導体レーザ素子
JP2004063634A (ja) * 2002-07-26 2004-02-26 Ricoh Co Ltd 半導体分布ブラッグ反射器および面発光レーザ素子および面発光レーザアレイおよび光通信システムおよび光インターコネクションシステム
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
US20070242716A1 (en) * 2004-03-19 2007-10-18 Arizona Board Of Regents, A Body Corporation Acting On Behalf Of Arizona State University High Power Vcsels With Transverse Mode Control
TW200603401A (en) * 2004-04-07 2006-01-16 Nl Nanosemiconductor Gmbh Optoelectronic device based on an antiwaveguiding cavity
JP4985954B2 (ja) * 2006-06-27 2012-07-25 セイコーエプソン株式会社 面発光型半導体レーザ

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Publication number Publication date
CN100536266C (zh) 2009-09-02
CN101098067A (zh) 2008-01-02
JP2010050496A (ja) 2010-03-04

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