JP5489356B2 - Semiconductor measuring equipment - Google Patents

Description

  The present invention relates to a semiconductor measuring apparatus for testing electrical characteristics of a semiconductor element, particularly a power semiconductor element such as a power transistor.

  Power semiconductor elements such as power transistors, rectifier diodes, thyristors, and power MOSFETs are used in a wide range of fields including electric power generation such as power generation and power transmission, electric railways, automobiles, and household appliances. Many measuring devices have been proposed to test the mechanical characteristics.

  For example, Patent Document 1 provides a wafer support frame that supports a wafer on which a semiconductor element is formed between a back electrode needle that can move up and down and an upper electrode needle, and the wafer support frame is a forcing terminal and a back electrode. Is a sensing device, and a measuring device is disclosed in which a Kelvin contact is made on the back side surface of a test semiconductor element. In Patent Document 2, the outer edge of the wafer on which the test semiconductor element is formed is supported by a wafer holder, and the contact area of the probe that contacts from the back surface of the wafer is made equal to the area of the back surface of the test semiconductor element. There has been proposed a measuring apparatus that detects a defect on the back surface of an element. Furthermore, in Patent Document 3, by providing a control means for controlling the movable amount of the probe that comes into contact with the semiconductor wafer from above and below, the probe can be brought into contact with an appropriate pressing force even on a thin wafer. A test apparatus is disclosed.

  However, in these conventional measuring apparatuses or test apparatuses, the wafer is supported at its outer edge by a wafer support frame or a wafer holder. Therefore, when the thickness of the wafer becomes thin, the wafer itself bends, and the probe needle and the semiconductor element. There is a problem that accurate contact cannot be made with the other electrodes. Further, since the wafer support frame or the wafer holder is only in contact with the outer edge of the wafer, there is a drawback that it is difficult to control the temperature of the wafer via the wafer support frame or the wafer holder.

  On the other hand, in Patent Document 4 and Patent Document 5, a wafer support base called a stage is brought into contact with the entire back surface of the wafer to support the wafer, and a measuring apparatus that prevents bending even with a thin wafer and Each test apparatus is disclosed. In these measurement apparatuses or test apparatuses, the contact between the back electrode of the wafer and the probe needle is such that a plurality of insertion holes are formed in the stage, and at the time of measurement, an insertion hole located almost directly below the test semiconductor element. The probe needle is moved to the bottom and the probe needle is raised at that position to bring the probe needle into contact with the back electrode of the wafer (Patent Document 4), or in each of a plurality of insertion holes provided on the stage A contact pin is inserted in advance, and at the time of measurement, the contact piece is moved to a position below the contact pin located almost directly below the test semiconductor element, and the contact piece is lifted at that position to push up the contact pin immediately above the wafer. It is made to contact with the back electrode of this (patent document 5). Thereby, in these measuring apparatuses or test apparatuses, the measurement current flows in the thickness direction of the wafer back electrode, and the potential difference from the back of the test semiconductor element to the contact point with the probe needle is superimposed on the measurement value as a resistance component. It is said that it is possible to measure with high accuracy.

  However, in the measurement apparatus and the test apparatus disclosed in Patent Document 4 and Patent Document 5, the test target wafer is switched to a new wafer, or the test semiconductor element is moved to the next semiconductor element even on the same test target wafer. Therefore, it is necessary to move the probe needle or contact piece for measurement to the position below the insertion hole or contact pin located almost directly under the new test semiconductor element. In addition, a moving mechanism that actually moves the probe needle or the contact piece to a predetermined position is required, and it takes time to move, so that the measurement efficiency is deteriorated.

Japanese Utility Model Publication No. 4-14933 JP 2000-114325 A JP 2003-332395 A Japanese Utility Model Publication No. 3-45643 JP 2004-311799 A

  The present invention has been made to eliminate the disadvantages and disadvantages of the conventional semiconductor measurement apparatus described above, and can support a test wafer having a small thickness without bending, and has a simple structure and the back surface of the test wafer. It is an object of the present invention to provide a semiconductor measuring apparatus capable of bringing a probe needle into contact with an electrode reliably and easily.

  As a result of intensive studies to solve the above problems, the inventors of the present invention have hitherto used chuck pins that have been used to temporarily support a wafer to be tested to penetrate the wafer chuck to the wafer chuck. Focusing on the fact that the probe needle moves relatively up and down, the probe needle is inserted into the chuck pin, and the inserted probe needle can be moved in the vertical direction relative to the wafer chuck. Thus, it has been found that the lower probe needle can be easily brought into contact with the back electrode of the wafer under test with a simple structure while using a wafer chuck having a support surface for supporting the wafer under test.

  That is, the present invention is a semiconductor measuring apparatus for testing the characteristics of a semiconductor element by contacting a probe needle to each of a front surface electrode of each of a plurality of semiconductor elements formed on a wafer and a back surface electrode of the wafer, A wafer chuck having a support surface for supporting a wafer to be tested; at least three chuck pins penetrating the wafer chuck in a vertical direction; and a first moving the chuck pin in a vertical direction relative to the wafer chuck. One moving mechanism; at least one lower probe needle inserted inside the chuck pin; a second moving mechanism for moving the lower probe needle in a vertical direction relative to the wafer chuck; and the wafer Together with the chuck pin and the lower probe needle, the chuck is connected to the upper probe needle located at the upper part of the wafer chuck. By providing a semiconductor measuring device having a third moving mechanism that moves relatively in a vertical direction and a horizontal direction; and a tester device that is electrically connected to the upper probe needle and the lower probe needle, It solves the above problems.

  In the semiconductor measuring apparatus of the present invention, as described above, the lower probe needle is inserted into at least one of the at least three chuck pins, and the lower probe needle is moved up and down relative to the wafer chuck. Since the chuck pin is used to place and support the wafer under test on the support surface of the wafer chuck, the lower probe needle inserted in the chuck pin is raised. Thus, the lower probe needle can be brought into contact with the back electrode of the wafer to be tested.

  There may be one or more lower probe needles, but two or three or more may be used. If there are two or more lower probe needles, the presence / absence of a wafer is detected by checking the presence / absence of conduction between the two lower probe needles, or the contact state between the lower probe needle and the back electrode of the wafer. This is convenient because it is possible to check the quality of the tester and the quality of the operation of the tester device. When the diameter of the chuck pin is relatively large, a plurality of lower probe needles may be inserted into one chuck pin, but usually one is inserted into one chuck pin. The lower probe needle is preferably inserted.

  Further, at least three chuck pins are necessary to support the wafer under test at the upper end thereof. Four or more chuck pins may be provided, but usually three are sufficient. When there are three chuck pins, it is preferable that the chuck pins are arranged at equal intervals so that the upper ends thereof form a regular triangle when seen in a plan view. In any case, the upper end surfaces of three or four or more chuck pins are preferably positioned on a single plane so as to be in good contact with the back surface of the wafer to be tested.

  In a preferred aspect of the semiconductor measuring apparatus of the present invention, the wafer chuck is conductive, and includes a force line connected to a central portion of the wafer chuck and a sense line connected to the lower probe needle. And the upper probe needle comprises a force side upper probe needle and a sense side upper probe needle, a force line connected to the force side upper probe needle, and a sense line connected to the sense side upper probe needle It has. Each sense line and each force line are connected to the tester device. When the semiconductor measuring apparatus of the present invention includes such a force line and a sense line, it is preferable because more accurate measurement can be performed by Kelvin connection.

  Furthermore, in a preferred aspect of the semiconductor measuring apparatus according to the present invention, the chuck pin includes a suction hole for sucking and supporting the test target wafer when the chuck pin supports the test target wafer at its upper end. Thereby, the support of the wafer under test by the chuck pins can be made more reliable.

  Moreover, the semiconductor measuring apparatus of this invention is equipped with the heating means and / or cooling means which heat or cool the said support surface of the said wafer chuck in the preferable one aspect | mode. When the semiconductor measuring apparatus of the present invention is provided with such heating means and / or cooling means, the temperature of the support surface of the wafer chuck is appropriately controlled so that the electric power of the semiconductor element at the desired temperature or temperature change is obtained. This is convenient because it can test the mechanical properties.

  The semiconductor elements targeted by the semiconductor measuring apparatus of the present invention are formed on the wafer, and the probe needle is brought into contact with the electrode on each semiconductor element and the back electrode of the wafer to obtain the electrical characteristics. Any device can be used as long as it can be tested, but power transistors such as power transistors, power MOSFETs, thyristors, rectifier diodes, insulated gate bipolar transistors, and triacs generally called power devices are targeted. In this case, the semiconductor measuring apparatus and the semiconductor measuring method of the present invention are most effective.

  According to the semiconductor measuring apparatus of the present invention, the wafer to be tested is placed on the support surface of the wafer chuck using the chuck pins, supported by the wafer chuck, and then the lower probe needle inserted in the chuck pins is tested. The lower probe needle can be brought into contact with the back electrode of the wafer to be tested simply by raising it toward the wafer to be tested. For this reason, according to the semiconductor measuring apparatus of the present invention, the probe needle is quickly brought into contact with the front and back surfaces of the test object wafer with a simple configuration without worrying about bending due to the weight of the test object wafer. The advantage of being able to test the electrical characteristics of the semiconductor element is obtained. If the wafer chuck in the semiconductor measuring apparatus of the present invention is provided with heating means and / or cooling means for heating or cooling the support surface of the wafer under test, the temperature of the support surface is appropriately controlled to The advantage is that the electrical characteristics of the semiconductor device can be tested at the temperature or temperature change.

It is a fragmentary sectional side view which shows an example of the semiconductor measuring apparatus of this invention. It is a partial cross-section enlarged view of a wafer chuck portion. It is an expanded sectional view of a chuck pin. It is a top view of a wafer chuck. It is a disassembled perspective view which shows the positional relationship of a wafer chuck, a chuck pin, and a lower probe needle. It is a partial cross section side view explaining operation | movement of the semiconductor measuring device of this invention. It is a partial cross section side view explaining operation | movement of the semiconductor measuring device of this invention. It is a partial cross section side view explaining operation | movement of the semiconductor measuring device of this invention. It is a partial cross section side view explaining operation | movement of the semiconductor measuring device of this invention. It is a perspective view which shows the principal part of another example of the semiconductor measuring apparatus of this invention.

  Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to the illustrated one.

  FIG. 1 is a partial cross-sectional side view showing an example of a semiconductor measuring apparatus of the present invention. In FIG. 1, 1 is a semiconductor measuring apparatus of the present invention, 2 is a wafer to be tested, 3 is a wafer chuck, 4 is a support surface of a wafer chuck 3 that supports the wafer 2 to be tested, 5a, 5b, and 5c are chucks. Pins 6 are chuck pin base plates. In FIG. 1, only the chuck pins 5a and 5c among the chuck pins 5a to 5c are shown in cross section. Further, as shown in the drawing, the chuck pins 5 a to 5 c penetrate the wafer chuck 3 in the vertical direction. A first moving mechanism 7 moves the chuck pins 5 a to 5 c together with the chuck pin base plate 6 in the vertical direction with respect to the wafer chuck 3, and is attached to the wafer chuck base plate 8.

In the state shown in FIG. 1, the upper end surfaces of the chuck pins 5 a to 5 c are slightly lower than the support surface 4, and the back surface of the wafer 2 to be tested is in contact with the support surface 4 of the wafer chuck 3. ing. In this example, the number of chuck pins 5a to 5c is three, but may be four or five or more. However, at least three chuck pins 5 a to 5 c are necessary to stably support the test target wafer 2 in a state where the upper end surface is above the support surface 4. In the illustrated example, the first moving mechanism 7 moves the chuck pins 5 a to 5 c in the vertical direction with respect to the wafer chuck 3, but the chuck pins 5 a to 5 c are relative to the wafer chuck 3. Therefore, the wafer chuck 3 may be moved in the vertical direction with respect to the chuck pins 5a to 5c.

  Reference numerals 9a, 9b, and 9c denote lower probe needles inserted into chuck pins 5a, 5b, and 5c, 10 denotes a lower probe needle base plate, 11 denotes lower probe needles 9a to 9c together with the lower probe needle base plate 10, and wafer chuck. 3, a second moving mechanism that moves up and down relative to 3, and is attached to the wafer chuck base plate 8 in the same manner as the first moving mechanism 7. In the illustrated example, one lower probe needle 9a to 9c is inserted into each of the chuck pins 5a to 5c, but the lower probe needles 9a to 9c are not necessarily inserted into all the chuck pins 5a to 5c. The lower probe needle may be inserted into only two or one of the three chuck pins 5a to 5c. In the illustrated example, the lower probe needles 9 a to 9 c are moved vertically with respect to the wafer chuck 3 by the second moving mechanism 11, but the lower probe needles 9 a to 9 c are moved relative to the wafer chuck 3. The wafer chuck 3 may be moved vertically relative to the lower probe needles 9a to 9c.

  In this example, the wafer chuck 3 is conductive, and a force line 12 f is connected to the center of the lower surface of the wafer chuck 3, and the other end of the force line 12 f is connected to the tester device T. 12s is a sense line, and one end of the sense line 12s is connected to the lower probe needles 9a to 9c via the lower probe needle base plate 10, and the other end is connected to the tester device T. Reference numeral 13 denotes an XYZθ stage, and 13a, 13b, 13c, and 13d denote an X-axis moving mechanism, a Y-axis moving mechanism, a Z-axis moving mechanism, and a θ-axis moving mechanism, respectively. The XYZθ stage 13 moves the wafer chuck 3 together with the chuck pins 5a to 5c and the lower probe needles 9a to 9c in the vertical direction and the horizontal direction relative to the upper probe needle positioned above the wafer chuck 3. A third moving mechanism is configured.

  14 s is a sense side upper probe needle, 14 f is a force side upper probe needle, 15 s is a sense line connecting the sense side upper probe needle 14 s and the tester device T, and 15 f is a force side upper probe needle 14 f and the tester device T. It is a force line. 16 is a probe manipulator, and 17 is a prober base plate. In the illustrated example, a sense side upper probe needle 14 s and a force side upper probe needle 14 f are provided as upper probe needles, and force lines 12 f connected to the lower probe needles 9 a to 9 c and the center of the lower surface of the wafer chuck 3. However, the connection of the probe needle in the semiconductor measuring apparatus 1 of the present invention is not limited to the Kelvin connection, and a single probe composed of the lower probe needles 9a to 9c and one upper probe needle. It may be a connection. In the illustrated example, the sense-side upper probe needle 14s and the force-side upper probe needle 14f are attached to the probe manipulator 16, but the upper probe needle may be attached to a probe card.

  FIG. 2 is an enlarged partial sectional view of the wafer chuck 3 in FIG. 1, and the same members as those in FIG. In FIG. 2, 18 a, 18 b and 18 c are suction grooves provided on the support surface 4 of the wafer chuck 3, and 19 is a heating and / or cooling means built in the wafer chuck 3. Any heating and / or cooling means 19 may be used as long as the wafer chuck 3 can be heated or cooled. For example, if only heating is used, a heater that converts electrical energy into thermal energy is used. If both heating and cooling are performed, for example, a Peltier element using the Peltier effect can be used.

  FIG. 3 is an enlarged cross-sectional view of the chuck pin 5a. As shown in the figure, the chuck pin 5 a has a double structure including an outer cylinder 20 and an inner cylinder 21 coaxial with the outer cylinder 20, and an air passage 22 is provided between the outer cylinder 20 and the inner cylinder 21. Is formed. One end of the air passage 22 opens from the upper ends of the outer cylinder 20 and the inner cylinder 21 toward the upper outside, and the other end is connected to an appropriate suction device (not shown) via a conduit 23. By operating the suction device to suck the air passage 22, the chuck pins 5 a can suck and support the wafer under test at the upper ends of the outer cylinder 20 and the contents 21. A lower probe needle 9a is inserted inside the inner cylinder 21, and the lower probe needle 9a can freely move in the vertical direction inside the inner cylinder 21. The lower probe needle 9a is biased upward by elastic means (not shown). As the lower probe needle 9a, for example, a pogo pin having an elastic biasing means inside thereof may be used. Although only the chuck pin 5a has been described above, the same applies to the other chuck pins 5b and 5c.

  FIG. 4 is a plan view of the wafer chuck 3. As shown in the drawing, suction grooves 18 a, 18 b and 18 c are formed concentrically on the support surface 4 of the wafer chuck 3, and the suction grooves 18 a to 18 c are in communication with each other through the communication grooves 24. Is connected to a suction device (not shown) via a conduit 23. By operating the suction device to suck the inside of the suction grooves 18 a, 18 b and 18 c, the wafer chuck 3 can suck and support the test target wafer on the support surface 4.

  FIG. 5 is an exploded perspective view showing the positional relationship between the wafer chuck 3, the chuck pins 5a to 5c, and the lower probe needles 9a to 9c. As shown in the figure, the wafer chuck 3 is provided with holes 3a, 3b, 3c that penetrate the wafer chuck 3 up and down, and the chuck pins 5a, 5b, 5c penetrate the through holes 3a, 3b, 3c, respectively. It is arranged at the position to do. The lower probe needles 9a, 9b, and 9c are disposed at positions that penetrate the chuck pins 5a, 5b, and 5c, respectively. A force line 12f is connected to the lower center portion of the wafer chuck 3, and a sense line 12s is connected to the lower probe needles 9a, 9b, 9c. Reference numeral 2 denotes a wafer to be tested.

  Next, operation | movement of the semiconductor measuring device 1 of this invention is demonstrated using FIGS. FIG. 6 shows a state in which the first moving mechanism 7 is operated in the direction of the arrow in the drawing and the chuck pins 5 a to 5 c are raised above the support surface 4 of the wafer chuck 3. In this state, a suction device (not shown) is operated to start suction of the air passages 22 described above of the chuck pins 5a to 5c. On the other hand, the wafer under test 2 which has been transferred onto the chuck pins 5a to 5c by an appropriate transfer arm is slowly lowered and placed on the chuck pins 5a to 5c, and the air passages 22 of the chuck pins 5a to 5c are formed. Since it is in the suction state, it is sucked and supported on the chuck pins 5a to 5c. At this time, the lower probe needles 9 a to 9 c are in positions where their upper ends are lowered below the support surface 4. Further, a suction device (not shown) is activated to start suction of the suction grooves 18 a to 18 c formed on the support surface 4. 2a, 2b, 2c,... Are semiconductor elements formed on the test target wafer 2.

  When the wafer 2 to be tested is attracted and supported on the chuck pins 5a to 5c, as shown in FIG. 7, the first moving mechanism 7 operates in the direction of the arrow in the drawing to lower the chuck pins 5a to 5c, The test object wafer 2 is placed on the support surface 4 of the wafer chuck 3. Since the suction grooves 18 a to 18 c formed on the support surface 4 are in the suction state, the wafer under test 2 is sucked and supported on the support surface 4. At the same time, the lower force line 12 f is electrically connected to the back electrode of the wafer under test 2. When the transfer of the test object wafer 2 from the chuck pins 5a to 5c to the support surface 4 is finished in this way, the suction of the air passage 22 of the chuck pins 5a to 5c is stopped, and the chuck pins 5a to 5c have their upper ends at the upper ends. It descends to a position slightly below the support surface 4 of the wafer chuck 3 and stops at that position.

  When the test object wafer 2 is attracted and supported on the support surface 4 and the lower force line 12f is electrically connected to the back electrode of the test object wafer 2, as shown in FIG. 11 operates in the direction of the arrow in the figure to raise the lower probe needles 9 a to 9 c and bring their tips into contact with the back electrode of the wafer 2 to be tested. As a result, the lower sense line 12s is electrically connected to the back electrode of the wafer 2 to be tested. As described above, since the lower probe needles 9a to 9c are biased upward by the elastic means, the lower probe needles 9a to 9c are slightly more than the positions where the tips contact the back electrode of the wafer 2 to be tested. Pushed downward, the lower probe needles 9a to 9c are brought into contact with the back electrode of the test object wafer 2, that is, the electrical connection between the lower sense line 12s and the back electrode of the test object wafer 2 is reliably performed.

  As described above, when contact between the lower probe needles 9a to 9c and the back electrode of the wafer 2 to be tested is achieved, the X-axis moving mechanism 13a, the Y-axis moving mechanism 13b, and the θ-axis moving mechanism of the XYZθ stage 13 are achieved. 13d operates to perform alignment for aligning the X, Y, and θ positions of the test target wafer 2 supported on the support surface 4 of the wafer chuck 3 with predetermined positions. Note that either the alignment of the test target wafer 2 or the contact of the lower probe needles 9a to 9c with the back electrode of the test target wafer 2 may be performed first.

  Next, the X-axis moving mechanism 13a and the Y-axis moving mechanism 13b of the XYZθ stage 13 are actuated so that the semiconductor element 2d to be tested becomes a measurement position with respect to the sense-side upper probe needle 14s and the force-side upper probe needle 14f. The wafer 2 to be tested is moved together with the wafer chuck 3 so as to come to the point. When the semiconductor element 2d to be tested comes to a predetermined measurement position, as shown in FIG. 9, the Z-axis moving mechanism 13c is operated to move the wafer chuck 3 together with the chuck pins 5a to 5c and the lower probe needles 9a to 9c. Is moved upward as indicated by an arrow in the drawing, the surface electrode of the semiconductor element 2d formed on the wafer 2 to be tested is brought into contact with the sense-side upper probe needle 14s and the force-side upper probe needle 14f. The electrical characteristics of the semiconductor element 2d are measured.

  When the measurement of the semiconductor element 2d is finished, the Z-axis moving mechanism 13c of the XYZθ stage 13 is operated to lower the wafer chuck 3 once, and then the X-axis moving mechanism 13a and / or the Y-axis moving mechanism 13b is operated. For example, the wafer chuck 3 is moved so that the next semiconductor element 2c is at the measurement position. When the semiconductor element 2c is at the measurement position, the Z-axis moving mechanism 13c is operated in the same manner as described above, and the wafer chuck 3 is indicated by an arrow in the drawing together with the chuck pins 5a to 5c and the lower probe needles 9a to 9c. The surface electrode of the semiconductor element 2c is brought into contact with the sense-side upper probe needle 14s and the force-side upper probe needle 14f, and the electrical characteristics of the semiconductor element 2c are measured by the tester device T.

  When such operations are repeated and the measurement of all the semiconductor elements on the test target wafer 2 is completed, the lower probe needles 9a to 9c are lowered, and the electrical connection between the lower sense line 12s and the back electrode of the test target wafer 2 is performed. The connection is released. Subsequently, the suction of the suction grooves 18a to 18c on the support surface 4 is stopped, and the suction of the air passage 22 of the chuck pins 5a to 5c is started. Lift up to the position where it is transferred to the transfer arm etc. while adsorbing and supporting. When the test target wafer 2 is separated from the support surface 4, the electrical connection between the lower force line 12 f and the back electrode of the test target wafer 2 is released.

  As described above, according to the semiconductor measuring apparatus 1 of the present invention, the lower probe needles 9a to 9c are mounted after the test target wafer 2 is attracted and supported on the support surface 4 of the wafer chuck 3 by the chuck pins 5a to 5c. With the simple operation of raising, the lower probe needles 9 a to 9 c can be brought into contact with the back electrode of the test object wafer 2, and the lower sense line 12 s can be electrically connected to the back electrode of the test object wafer 2.

  FIG. 10 is a perspective view showing a main part of another example of the semiconductor measuring apparatus 1 according to the present invention. The same members as those described above are denoted by the same reference numerals. In the present example, the fourth chuck pin 5d is provided on the chuck pin base plate 6, and the fourth lower probe needle 9d is provided on the lower probe needle base plate 10, which is different from the previous example. ing. That is, in this example, instead of connecting the force line 12f to the center of the lower surface of the wafer chuck 3, a fourth lower probe needle 9d is provided, and the force line 12f is connected thereto. The wafer chuck 3 is formed with a fourth through hole 3d corresponding to the fourth chuck pin 5d.

  According to the semiconductor measuring apparatus 1 of this example, the lower probe needles 9 a to 9 d are raised toward the test target wafer 2 after the test target wafer 2 is sucked and supported on the support surface 4 of the wafer chuck 3. Thus, the lower probe needles 9a to 9c to which the sense line 12s is connected can be brought into contact with the back electrode of the test target wafer 2, and at the same time, the lower probe needle 9d to which the force line 12f is connected is connected to the test target wafer. 2 backside electrodes.

  As described above, according to the semiconductor measuring apparatus of the present invention, the lower probe needle is lifted toward the test target wafer while the entire back surface of the test target wafer is supported by the support surface of the wafer chuck. Since the contact with the back electrode of the wafer to be tested can be realized, the bending of the wafer to be tested can be prevented, and it is not necessary to determine the moving position and move the lower probe needle. Efficient measurement of semiconductor elements is possible. Therefore, the semiconductor measuring apparatus of the present invention greatly contributes to the improvement of the quality and performance of semiconductor elements, particularly power semiconductor elements that are expected to expand further in the future, and has great industrial applicability. It is.

DESCRIPTION OF SYMBOLS 1 Semiconductor measuring apparatus 2 Wafer to be tested 3 Wafer chuck 4 Support surface 5a, 5b, 5c, 5d Chuck pin 6 Chuck pin base plate 7 First moving mechanism 8 Wafer chuck base plate 9a, 9b, 9c, 9d Lower probe needle 10 Lower Probe needle base plate 11 Second moving mechanism 12f, 15f Force line 12s, 15s Sense line 13 XYZθ stage 14s Sense side upper probe needle 14f Force side upper probe needle 16 Probe manipulator 17 Prober base plate 18a, 18b, 18c Suction groove 19 Heating And / or cooling means 20 outer cylinder 21 inner cylinder 22 air passage 23 pipe 24 connection groove T tester device

Claims (4)

A semiconductor measuring apparatus for testing characteristics of a semiconductor element by contacting a probe needle with each of a front surface electrode of each of a plurality of semiconductor elements formed on the wafer and a back surface electrode of the wafer, and supporting a test target wafer A wafer chuck with a support surface;
At least three chuck pins penetrating the wafer chuck in the vertical direction; a first moving mechanism for moving the chuck pin in the vertical direction relative to the wafer chuck; and at least inserted inside the chuck pins. One lower probe needle; a second moving mechanism that moves the lower probe needle in a vertical direction relative to the wafer chuck; and the wafer chuck together with the chuck pins and the lower probe needle A third moving mechanism that moves in the vertical and horizontal directions relative to the upper probe needle located on the upper part of the chuck; and a tester device that is electrically connected to the upper probe needle and the lower probe needle. Semiconductor measuring equipment.   The wafer chuck is conductive, and includes a force line connected to a central portion of the wafer chuck and a sense line connected to the lower probe needle, and the upper probe needle is a force side upper probe needle and A force line connected to the force-side upper probe needle, and a sense line connected to the sense-side upper probe needle, each sense line and each force line being the tester device The semiconductor measuring device according to claim 1 connected to the.   3. The semiconductor measuring apparatus according to claim 1, further comprising a suction hole for sucking and supporting the test target wafer when the chuck pin supports the test target wafer at an upper end portion thereof.   The semiconductor measuring apparatus according to claim 1, further comprising a heating unit and / or a cooling unit that heats or cools the support surface of the wafer chuck.

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