JP5978992B2 - Electronic device test apparatus and test method - Google Patents

Description

  The present invention relates to a test apparatus and a test method for an electronic device, and for example, relates to a test apparatus and a test method capable of accurately and stably testing a semiconductor wafer.

  In recent years, with higher functionality and higher performance required for electronic devices, higher integration, higher speed, and larger capacity are also required for semiconductor devices mounted on the electronic devices. . For this reason, in the semiconductor device, the operation speed is increased, and at the same time, the number of external terminals, that is, the number of signal terminals, the number of power supply terminals, and the number of ground terminals is increased. As a result, in the characteristic test, the number of contact pins of the test board and the probe card increases due to the increase in the number of external terminals, and the load applied to the semiconductor device at the time of electrical contact increases (for example, see Patent Document 1). .

  At the same time, since the current capacity is increased and the power consumption is increased at the same time due to the higher integration, higher speed, and larger capacity, the self-heating amount of the semiconductor device during the characteristic test is increased. Therefore, in order to satisfy the temperature condition necessary for the characteristic test, a higher-speed and higher-precision temperature control function, that is, a cooling / heating function is required.

  Here, a conventional semiconductor test apparatus will be described with reference to FIGS. FIG. 12 is a conceptual configuration diagram of a conventional semiconductor test apparatus, which includes a wafer prober apparatus 10 provided with a test head 30 and an LSI tester 40. The wafer prober apparatus 10 includes a stage 15 on which a semiconductor wafer 16 is mounted inside a housing 11 and a stage moving mechanism that moves the stage 15 in the XY direction. The ball screw that moves the stage 15 in the vertical direction is not shown here.

  The stage moving mechanism includes a rail housing 12 including a guide rail X13 that moves the stage 15 in the X direction, and a guide rail Y14 that moves the rail housing 12 in the Y direction. The stage 15 moves in the X direction along the guide rail X13.

  A probe card 31 is attached to the test head 30, and a probe portion 32 including probe pins 33 supported and fixed by a guide member 34 is attached to the probe card 31. The test is performed by a signal from the LSI tester 40 contacting the probe pin 33 to the semiconductor wafer 16 via the test head 30 to apply a test signal and outputting the output to the LSI tester 40.

  FIG. 13 is an explanatory diagram of a measurement operation of a conventional semiconductor test apparatus. First, as shown in FIG. 13A, the stage 15 on which the semiconductor wafer 16 is mounted is moved relative to the probe card 31 in the XY direction by using the stage moving mechanism, and the measurement target chip becomes the probe pin. Move to come under 33.

  Next, as shown in FIG. 13B, the ball screw 29 disposed on the central axis of the stage 15 is sent to be raised in the Z direction, and the probe pin 33 is brought into contact with the measurement target semiconductor chip with a predetermined pressure. Perform the test. After completion of the characteristic test, the ball screw 29 is lowered and the stage 15 is moved to the next chip to be measured.

  In a semiconductor device having a large current capacity and large power consumption, it is necessary to satisfy a temperature condition to be guaranteed in the characteristic test against an increase in the amount of self-heating during the characteristic test. For that purpose, it is necessary to control the stage temperature to the temperature condition of the characteristic test by the temperature control function installed on the stage on which the wafer is mounted.

  FIG. 14 is a conceptual configuration diagram of a conventional semiconductor measuring apparatus with a temperature adjusting function, in which a cooling pipe 26 for circulating a refrigerant, a heater 27, and a temperature sensor 28 are accommodated in a stage 15. At the time of the characteristic test, in order to control the temperature of the measurement target chip (die), the temperature is measured by the temperature sensor 28, and the on / off of the switch 23 is controlled by the temperature controller 21 based on the output to the heater 27. The voltage application is controlled and the circulation amount of the refrigerant is also controlled.

Table 2010/073359 JP 2006-329816 A

  However, there are many external terminals used for the characteristic test, and when the total load of pressing increases, if there is a distance from the central axis to the pressing part, the stage tilts because a bending moment is generated in the pressing part, The circumstances will be described with reference to FIG.

  FIG. 15 is an explanatory diagram of problems in a conventional semiconductor test apparatus. When a chip located at an end away from the central axis is measured, the bending moment generated in the pressing portion increases and the stage 15 tilts. . As a result, there is a problem that even if the stage 15 is raised and the contact is pressed, the actual stroke amount of the probe pin 33 is insufficient to induce a contact failure and the contact load is insufficient.

  Also, if the current capacity of each chip in the wafer varies, the power consumption of each chip varies, and therefore it is necessary to control the measurement target chip to the required temperature condition for the characteristic test.

  However, in the case of a semiconductor measuring device with a temperature adjustment function, the temperature sensor only measures the temperature of the stage, and does not directly measure the temperature of the measurement target chip. As a result, there is a problem that the characteristic test cannot be performed while controlling the temperature of each measurement target chip that is performing the characteristic test within a necessary temperature range.

  Accordingly, it is an object of the present invention to eliminate the shortage of contact load due to the short stroke of the probe pin in the test apparatus and test method for electronic devices.

From one aspect to be disclosed, a stage on which a wafer on which an electronic device is formed is mounted and which can be driven in the plane X, Y direction and height Z direction, and an upper portion facing the stage are provided, and a probe unit is provided. A probe fixing portion for fixing the probe card, and a support body that can be moved up and down so as to come into contact with the lower surface of the stage, the center axis of the support body coincides with the center axis of the probe section, and the stage A lifting mechanism that supports the pressing force of the probe card on the wafer by raising the support and bringing it into contact with the lower surface of the stage when the probe unit is lifted and pressed to make electrical contact. An electronic device test apparatus is provided.

  From another viewpoint to be disclosed, a stage on which a wafer on which an electronic device is formed is mounted in a horizontal direction with respect to a probe portion provided on a probe card fixed to a probe located at an upper portion opposite to the stage. A step of raising the stage, abutting and pressing the measurement target portion of the wafer against the probe portion to make electrical contact, and a position where the central axis of the probe portion and the central axis of the probe portion coincide with each other And a step of supporting the pressing force of the probe card on the wafer by raising the support disposed on the stage and bringing it into contact with the lower surface of the stage.

  According to the disclosed test apparatus and test method for an electronic device, it is possible to eliminate a shortage of contact load due to a short stroke of the probe pin.

It is a conceptual principal part block diagram of the testing device for electronic devices of embodiment of this invention. It is a notional block diagram of the semiconductor test equipment of Example 1 of the present invention. It is explanatory drawing of the horizontal direction operation | movement of the semiconductor testing apparatus of Example 1 of this invention. It is explanatory drawing of the vertical direction operation | movement of the semiconductor testing apparatus of Example 1 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 2 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 3 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 4 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 5 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 6 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 7 of this invention. It is a conceptual principal part block diagram of the semiconductor test apparatus of Example 8 of this invention. It is a notional block diagram of the conventional semiconductor test apparatus. It is explanatory drawing of the measurement operation | movement of the conventional semiconductor test apparatus. It is a notional block diagram of the conventional semiconductor test apparatus with a temperature adjustment function. It is explanatory drawing of the problem of the conventional semiconductor test apparatus.

  Here, with reference to FIG. 1, an electronic device test apparatus according to an embodiment of the present invention will be described. FIG. 1 is a conceptual configuration diagram of a principal part of an electronic device test apparatus according to an embodiment of the present invention, which enables a stage 1 made of a hard member such as stainless steel on which a wafer 2 is mounted to be moved in the XYZ directions. A support 3 having a fixed position in the XY direction is provided. The support 3 is arranged so that the central axis thereof coincides with the central axis of the probe portion 5 of the probe card 4, and is provided with an elevating mechanism in the Z direction. The degree of coincidence of the central axes does not mean a mathematically exact coincidence, but allows a mechanical error. Note that the diameter of the support 3 is, for example, about 1.2 to 2 times the major axis of the measurement target chip. If the measurement area is large by simultaneous measurement, the diameter is about 1.2 to 2 times the measurement area. desirable.

  At the time of measurement, the stage 1 on which the wafer 2 is mounted is moved relative to the probe portion 5 of the probe card 4 in the XY direction using the stage moving mechanism, and the measurement target chip is supported and fixed to the guide member 7. The probe pin 6 is moved so as to come directly below. Next, the probe pin 6 is brought into contact with the measurement target chip with a predetermined pressure by being raised in the Z direction by an elevating mechanism provided on the stage 1.

  At this time, the support 3 is lifted in the Z direction by the lifting mechanism and is brought into contact with the inner ceiling surface of the stage 1 to keep the pressing force of the probe pins 6 on the wafer 2 mounted on the stage 1 at a predetermined value. It becomes possible to do.

In recent years, due to the increase in the number of external terminals in the characteristic test of a semiconductor device, the load applied to the semiconductor device during electrical contact by the probe card increases, and the load applied to the stage of the wafer prober device increases. For example, if the number of external terminals is 20,000 pins and the probe load per pin of the probe card is 5 gf,
5 gf × 20,000 (pin) = 100,000 gf (= 100 kgf)
It becomes.

  Therefore, when performing the characteristic test of the chip located at the end of the wafer, the bending moment generated in the pressing portion becomes very large. However, in the embodiment of the present invention, it is possible to prevent the stage 1 from being bent downward not only by the stage 1 but also by the support 3 arranged on the inner ceiling surface of the stage 1. In addition, although the material of the support body 3 is arbitrary, the same stainless steel as the stage 1 is typical.

  The support 3 includes a cooling mechanism for flowing the coolant to cool the support, a heater for heating the support by applying a voltage, and a temperature sensor disposed on the ceiling surface of the support. It is desirable to provide a temperature adjustment mechanism. By providing such a temperature adjustment mechanism, it is possible to accurately measure the temperature of the measurement target portion of the wafer 2 instead of the temperature of the stage 1.

  In this case, the cooling mechanism and the heater are controlled by the temperature controller based on the measurement result of the temperature sensor. The cooling mechanism is typically a cooling pipe that circulates coolant such as cooling water or Fluorinert (registered trademark of 3M Company).

  Alternatively, a temperature adjustment mechanism including a cooling mechanism that cools the stage by flowing a refrigerant, a heater that heats the stage by applying a voltage, and a temperature sensor that is disposed on the internal ceiling surface of the stage is provided inside the stage 1. It may be provided. Thus, by providing the stage 1 with a temperature adjustment mechanism, it becomes possible to reach a predetermined temperature condition at a higher speed.

  In addition, either a heat conductive sheet or a heat conductive grease having good heat conductivity may be provided on the contact surface between the support 3 and the stage 1, and the heat conduction between the support 3 and the stage 1 may be performed. Done efficiently. In addition, as a heat conductive sheet, a graphite sheet, a rubber sheet, or the like can be used. Such a heat conductive sheet or heat conductive grease may be provided on the top surface of the support 3 or on the lower surface of the stage.

  Further, a second support body having the same structure may be provided adjacent to the support body 3 provided with the temperature adjusting mechanism, and temperature control of the next chip to be measured can be performed in advance.

  In addition, a plurality of probe portions 5 may be provided on the probe card 4, and a plurality of chips (dies) can be tested simultaneously. In that case, it is desirable that the planar shape of the support 3 is a shape that matches the planar outer shape of the plurality of probe portions 5, for example, a similar shape.

  When a plurality of probe parts 5 are provided on the probe card 4, individual supports 3 having a temperature adjustment function may be provided so as to correspond to each probe part. It becomes possible to perform the temperature control individually.

  According to the embodiment of the present invention, in a test apparatus used for a characteristic test of an electronic device such as a semiconductor device, a stroke amount of a probe pin induced by tilting a stage when measuring a die near the outer periphery of a wafer. The shortage can be suppressed. Further, the temperature of each die to be measured in the wafer can be controlled with respect to an increase in the amount of self-heating during the characteristic test of the electronic device having a large current capacity and large power consumption.

  It has been proposed to contact a contact member having a temperature regulator mechanism from the back side of the wafer to be measured (see Patent Document 2). However, in this proposal, there is no stage made of a hard member that directly supports the wafer, and the wafer is supported on the dicing tape, so the support of the present invention that prevents the tilt of the stage is completely different. Is different.

  Next, the semiconductor test apparatus according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a conceptual configuration diagram of the semiconductor test apparatus according to the first embodiment of the present invention, and includes a wafer prober apparatus 10 provided with a test head 30 and an LSI tester 40 as in the conventional semiconductor test apparatus. The wafer prober apparatus 10 includes a stage 15 on which a semiconductor wafer 16 is mounted inside a housing 11 and a stage moving mechanism that moves the stage 15 in the XY direction. A mechanism for moving the stage 15 in the vertical direction is not shown here.

  The stage moving mechanism includes a rail housing 12 that mounts a guide rail X13 that moves the stage 15 in the X direction, and a guide rail Y14 that moves the rail housing 12 in the Y direction. The stage 15 moves in the X direction along the guide rail X13. In the present invention, the opening 18 is provided so as not to hinder the lifting and lowering of the support 17 described later.

  A probe card 31 is attached to the test head 30, and a probe portion 32 including probe pins 33 supported and fixed by a guide member 34 is attached to the probe card 31. The test is performed by a signal from the LSI tester 40 contacting the probe pin 33 to the semiconductor wafer 16 via the test head 30 to apply a test signal and outputting the output to the LSI tester 40.

  In the first embodiment of the present invention, a stainless steel cylindrical support 17 having a wafer diameter of 300 mm, for example, a diameter of about 100 mm, is provided below the stage 15, and the central axis of the support 17 and the probe card 31. It arrange | positions so that the center axis | shafts of the probe part 32 may correspond.

  FIG. 3 is an explanatory diagram of the horizontal operation of the semiconductor test apparatus according to the first embodiment of the present invention. As shown in FIG. 3A, when measuring the chip on the lower right side of the semiconductor wafer 16, the rail The housing 12 is moved upward in the Y direction along the rail guide Y14. Next, the stage 15 is moved to the left in the X direction along the rail guide X <b> 13, and the stage 15 is moved so that the measurement target chip is positioned at the center of the support body 17.

  When measuring the chip located in the upper left, as shown in FIG. 3B, the rail housing 12 is moved downward in the Y direction along the rail guide Y14. Next, the stage 15 is moved to the right in the X direction along the rail guide X <b> 13, and the stage 15 is moved so that the measurement target chip is positioned at the center of the support body 17.

  FIG. 4 is an explanatory diagram of the vertical operation of the semiconductor test apparatus according to the first embodiment of the present invention, and FIG. 4A shows a state in which the horizontal alignment shown in FIG. . Next, as shown in FIG. 4B, the stage 15 is raised by the elevating mechanism to bring the semiconductor wafer 16 into contact with the probe pins 33. Next, the support 17 is raised by the lifting mechanism and brought into contact with the internal ceiling surface of the stage 15, and the characteristic test is performed in this state.

  In the first embodiment of the present invention, since a support body whose center axis coincides with the central axis of the probe portion is provided on the lower side of the stage, a bending moment is generated with respect to the tip away from the central axis. The stage can be raised and lowered without any problem. As a result, the stage is not inclined and the load is not insufficient.

  Next, referring to FIG. 5, a semiconductor test apparatus according to the second embodiment of the present invention will be described. FIG. 5 is a conceptual diagram of a principal part of a semiconductor test apparatus according to the second embodiment of the present invention, which is the same as the first embodiment except that the probe card includes a plurality of probe sections.

Here, the probe portion is 2 × 2, and the planar shape of the support is a rectangle close to a square by matching the outer shape of the four probe portions. In the figure, only the probe portions 32 ₁ and 32 ₂ are shown. By raising the support 17 and supporting the inner ceiling surface of the stage 15, a constant state is obtained for all four chips for measuring the pressing force of the probe card 31 on the semiconductor wafer 16 mounted on the stage 15. This enables stable simultaneous measurement of four chips at a time.

  Next, with reference to FIG. 6, a semiconductor test apparatus according to Embodiment 3 of the present invention will be described. FIG. 6 is a conceptual configuration diagram of a principal part of the semiconductor test apparatus according to the third embodiment of the present invention, which is the same as the first embodiment except that a temperature adjusting mechanism is provided inside the support.

  As shown in the figure, a cooling pipe 19 that cools the support 17 by flowing cooling water inside the support 17 disposed at a position directly below the probe portion 32 of the probe card 31, and a heater 20 that heats the support 17. Is provided. The circulation amount of the cooling water circulating through the cooling pipe 19 and the voltage application to the heater 20 are controlled by the temperature controller 21 based on the detection output of the temperature sensor 22 provided inside the support member 17. The voltage application is controlled by turning on and off 23. At this time, the temperature sensor 22 is arranged as close to the ceiling surface as possible of the support body 17.

  In Example 3 of the present invention, since the temperature control mechanism is provided inside the support body, the load at the measurement unit is not insufficient, and the temperature at the measurement site is detected by the temperature sensor. A characteristic test in a predetermined temperature range becomes possible.

  Next, with reference to FIG. 7, the semiconductor test apparatus of Example 4 of this invention is demonstrated. FIG. 7 is a conceptual configuration diagram of a principal part of the semiconductor test apparatus according to the fourth embodiment of the present invention, which is the same as the third embodiment except that thermal conductive grease is provided on the contact surface between the support and the stage. .

  As shown in the figure, a cooling pipe 19 that cools the support 17 by flowing cooling water inside the support 17 disposed at a position directly below the probe portion 32 of the probe card 31, and a heater 20 that heats the support 17. Is provided. The circulation amount of the cooling water circulating through the cooling pipe 19 and the voltage application to the heater 20 are controlled by the temperature controller 21 based on the detection output of the temperature sensor 22 provided inside the support member 17. The voltage application is controlled by turning on and off 23. At this time, the temperature sensor 22 is arranged as close to the ceiling surface as possible of the support body 17.

  In the fourth embodiment, the thermal conductive grease 24 is applied to the contact surface between the support 17 and the stage 15 so as to have a thickness of about 5 μm to 20 mm, for example. The thermal conductive grease 24 may be applied to the top surface of the support 17 or may be applied to the ceiling surface of the stage 15.

  In Example 4 of the present invention, in addition to obtaining the same effect as in Example 3 above, a thermal conductive grease having good thermal conductivity is interposed on the contact surface between the support and the stage. The temperature of the stage can be accurately controlled by improving the efficiency of heat conduction between the body and the stage.

  Next, with reference to FIG. 8, a semiconductor test apparatus according to Embodiment 5 of the present invention will be described. FIG. 8 is a conceptual configuration diagram of a principal part of a semiconductor test apparatus according to Example 5 of the present invention, which is the same as Example 3 except that a heat conductive sheet is provided on the contact surface between the support and the stage. .

  As shown in the figure, a cooling pipe 19 that cools the support 17 by flowing cooling water inside the support 17 disposed at a position directly below the probe portion 32 of the probe card 31, and a heater 20 that heats the support 17. Is provided. The circulation amount of the cooling water circulating through the cooling pipe 19 and the voltage application to the heater 20 are controlled by the temperature controller 21 based on the detection output of the temperature sensor 22 provided inside the support member 17. The voltage application is controlled by turning on and off 23. At this time, the temperature sensor 22 is arranged as close to the ceiling surface as possible of the support body 17.

  In Example 5, a heat conductive sheet 25 made of a graphite sheet having a thickness of, for example, about 50 μm to 800 μm is attached to the top surface of the support 17. As a result, the contact surface between the support 17 and the stage 15 has a structure in which a heat conductive sheet having good heat conductivity is interposed.

  In Example 5 of the present invention, in addition to the same effects as in Example 3 above, a heat conductive sheet having good thermal conductivity is interposed on the contact surface between the support and the stage. The temperature of the stage can be accurately controlled by improving the efficiency of heat conduction between the body and the stage.

  Next, with reference to FIG. 9, a semiconductor test apparatus according to Embodiment 6 of the present invention will be described. FIG. 9 is a conceptual configuration diagram of a principal part of a semiconductor test apparatus according to a sixth embodiment of the present invention, which is the same as the first embodiment except that a temperature adjustment mechanism is provided inside the stage.

  As shown in the figure, a cooling pipe 19 that cools the support 17 by flowing cooling water inside the support 17 disposed at a position directly below the probe portion 32 of the probe card 31, and a heater 20 that heats the support 17. Is provided. The circulation amount of the cooling water circulating through the cooling pipe 19 and the voltage application to the heater 20 are controlled by the temperature controller 21 based on the detection output of the temperature sensor 22 provided inside the support member 17. The voltage application is controlled by turning on and off 23. At this time, the temperature sensor 22 is arranged as close to the ceiling surface as possible of the support body 17.

  In the sixth embodiment, a cooling pipe 26 that cools the stage 15 by flowing cooling water inside the stage 15 and a heater 27 that heats the stage 15 are provided. The circulation amount of the cooling water circulating through the cooling pipe 26 and the voltage application to the heater 27 are controlled by a temperature controller (not shown) based on the detection output of the temperature sensor 28 provided in the stage 15.

  In the sixth embodiment of the present invention, in addition to the same effects as in the third embodiment, a temperature adjustment mechanism is provided inside the stage, so that it is possible to reach a predetermined temperature condition at a higher speed. become. In other words, when the wafer is mounted on the stage, the temperature is adjusted by heating or cooling to a certain temperature, and further, the temperature is adjusted by heating or cooling to the temperature condition of the characteristic test by the support, so that the temperature can be increased. A predetermined temperature condition can be reached.

  Next, with reference to FIG. 10, the semiconductor test apparatus of Example 7 of this invention is demonstrated. FIG. 10 is a conceptual configuration diagram of a principal part of a semiconductor test apparatus according to Example 7 of the present invention, which is the same as Example 3 except that a support for the next measurement is provided.

As shown, the cooling pipe 19 1 a cooling water to flow inside the support body 17 ₁ arranged in a position to cool the support 17 ₁ directly under the probe portion 32 of the probe card _31, the support 17 ₁ It provided with a heater 20 ₁ for heating, providing a support body 17 ₂ for the next measurement to the next. Heater 20 ₂ for heating the next measurement in the interior of the support body 17 ₂ for in flowing cooling water to cool the support 17 ₂ cooling pipe 19 _2, the support 17 ₂ is provided.

The circulation amount of the cooling water circulating through the cooling pipes 19 ₁ and 19 ₂ and the voltage application to the heaters 20 ₁ and 20 ₂ are respectively detected by the temperature sensors 22 ₁ and 22 ₂ provided inside the supports 17 ₁ and 17 _2. Based on the temperature controller 21 ₁ , 21 _{2 is} controlled. Voltage application to the heaters 20 ₁ and 20 ₂ is controlled by turning on and off the switches 23 ₁ and 23 ₂ . At this time, the temperature sensors 22 ₁ and 22 ₂ are arranged as close as possible to the ceiling surface of the supports 17 ₁ and 17 ₂ .

In Example 7 of the present invention, in addition to the same effect as in Example 3 above is obtained, since the provided support 17 ₂ for the next measurement, the supporting member 17 ₁ and the support 17 ₂ simultaneously By raising the temperature, the temperature control of the chip to be measured and the temperature control of the next chip to be measured can be performed simultaneously.

  Next, with reference to FIG. 11, the semiconductor test apparatus of Example 8 of this invention is demonstrated. FIG. 11 is a conceptual configuration diagram of a principal part of the semiconductor test apparatus according to the eighth embodiment of the present invention, in which an individual support having a temperature adjustment function corresponding to each probe of the multi-probe test apparatus according to the second embodiment is provided. Other than the above, the second embodiment is the same as the second embodiment.

As shown in the figure, rectangular supports 17 ₁ , 17 ₂ having a temperature adjustment function arranged at positions immediately below the probe portions 32 ₁ , 32 ₂ of the probe card 31 are arranged close to a square. Heater ₂₀ 1 for heating the support ₁₇ 1, 17 support ₁₇ 1 the cooling water to flow into the interior of _2, 17 cooling pipe _{19 1 2} is cooled, 19 _2, support ₁₇ 1, 17 _2, 20 ₂ is provided.

The circulation amount of the cooling water circulating through the cooling pipes 19 ₁ and 19 ₂ and the voltage application to the heaters 20 ₁ and 20 ₂ are respectively detected by the temperature sensors 22 ₁ and 22 ₂ provided inside the supports 17 ₁ and 17 _2. Based on the temperature controller 21 ₁ , 21 _{2 is} controlled. Voltage application to the heaters 20 ₁ and 20 ₂ is controlled by turning on and off the switches 23 ₁ and 23 ₂ . At this time, the temperature sensors 22 ₁ and 22 ₂ are arranged as close as possible to the ceiling surface of the supports 17 ₁ and 17 ₂ .

  In Example 8 of the present invention, in addition to obtaining the same effect as in Example 2 above, the probe unit is provided with a support having a temperature adjustment function corresponding to each of the probe parts. Temperature control can be performed individually and simultaneously.

Here, the following additional notes are attached to the embodiment of the present invention including Examples 1 to 8.
(Supplementary note 1) A probe card on which a wafer on which an electronic device is formed is mounted and which can be driven in a plane X, Y direction and height Z direction, and a probe card which is located on the upper side opposite to the stage and provided with a probe unit And a support body that can be moved up and down so as to abut the lower surface of the stage, the center axis of the support body coincides with the center axis of the probe section, and the stage is raised When the probe portion is pressed and brought into electrical contact, the support body is lifted and brought into contact with the lower surface of the stage to have a lifting mechanism that supports the pressing force of the probe card on the wafer. Test equipment for electronic devices.
(Supplementary Note 2) A cooling mechanism that cools the support by flowing a refrigerant, a heater that heats the support by applying a voltage, and a temperature sensor disposed on the support are provided inside the support. The test apparatus for electronic devices according to appendix 1, which has a temperature adjustment mechanism.
(Supplementary Note 3) A cooling mechanism for cooling the stage by flowing a refrigerant, a heater for heating the stage by applying a voltage, and a temperature sensor disposed on the internal ceiling surface of the stage are provided inside the stage. The test apparatus for electronic devices according to appendix 2, which has a temperature adjustment mechanism.
(Supplementary note 4) The electronic device test apparatus according to supplementary note 2, wherein either a heat conductive sheet or a heat conductive grease is provided on a top surface of the support.
(Supplementary note 5) The electronic device testing apparatus according to supplementary note 2, wherein either the heat conductive sheet or the heat conductive grease is provided on the entire surface of the stage that can contact the support.
(Additional remark 6) Cooling which provides a 2nd support body adjacent to the support body provided with the said temperature adjustment mechanism, makes a refrigerant | coolant flow inside the said 2nd support body, and cools the said 2nd support body Any one of appendix 2 to appendix 5, comprising a mechanism, a heater for heating the second support by applying a voltage, and a temperature sensor disposed on the second support. The electronic device test apparatus according to claim 1.
(Additional remark 7) The said probe card is provided with the said some probe part, The planar shape of the said support body is a shape matched with the planar external shape of the said several probe part, The additional statement 1 characterized by the above-mentioned. Test device for electronic devices.
(Additional remark 8) The said probe card is provided with the said some probe part, The said support body consists of a some support body corresponding to the said some probe part, and it is made to flow a refrigerant | coolant inside each said support body. Appendix 1 characterized by having a temperature adjustment mechanism comprising a cooling mechanism for cooling each support, a heater for heating each support by applying a voltage, and a temperature sensor disposed on each support. The test apparatus for electronic devices as described.
(Additional remark 9) The stage which mounted the wafer in which the electronic device was formed performs horizontal alignment with the probe part provided in the probe card | curd fixed to the probe fixing | fixed part located in the upper part facing the said stage. A step of raising the stage and abutting and pressing the measurement target portion of the wafer against the probe portion to make electrical contact; and a position where the central axis of the probe portion coincides with the central axis of the probe portion And a step of supporting the pressing force of the probe card on the wafer by raising the supported support and bringing it into contact with the lower surface of the stage.
(Supplementary Note 10) A cooling mechanism that cools the support by flowing a refrigerant, a heater that heats the support by applying a voltage, and a temperature sensor disposed on the support are provided inside the support. The test method according to appendix 9, wherein the temperature of the measurement target portion of the wafer is controlled within a predetermined temperature range when the support is brought into contact with the lower surface of the stage.

DESCRIPTION OF SYMBOLS 1 Stage 2 Wafer 3 Support body 4 Probe card 5 Probe part 6 Probe pin 7 Guide member 10 Wafer prober apparatus 11 Case 12 Rail case 13 Guide rail X
14 Guide rail Y
15 Stage 16 semiconductor wafer 17 _1, 17 ₂ supports 18 opening 19 _1, 19 ₂ cooling pipes 20, 20 _1, 20 ₂ heater 21 _1, 21 ₂ Temperature controller 22 _1, 22 ₂ temperature sensor 23 _1, 23 ₂ switch 24 thermal grease 25 thermal conduction sheet 26 cooling pipe 27 heater 28 temperature sensor 29 ball screw 30 test head 31 probe card 32 _1, 32 ₂ probes 33, 33 _1, 33 ₂ probe pins 34, 34 ₁ , 34 ₂ guide member 40 LSI tester

Claims (5)

A stage on which a wafer on which electronic devices are formed can be mounted and driven in the plane X, Y direction and height Z direction;
A probe fixing part for fixing a probe card provided with a probe part, located on the upper part facing the stage;
A support body that can be raised and lowered to contact the lower surface of the stage;
When the center axis of the support coincides with the center axis of the probe portion and the stage is raised and presses the probe portion to make electrical contact, the support is raised and contacts the lower surface of the stage. An electronic device testing apparatus, comprising: an elevating mechanism that contacts and supports the pressing force of the probe card on the wafer. Inside the support,
A cooling mechanism for cooling the support by flowing a refrigerant;
A heater for heating the support by applying a voltage;
The electronic device test apparatus according to claim 1, further comprising a temperature adjustment mechanism including a temperature sensor disposed on the support.   3. The electronic device testing apparatus according to claim 2, wherein either a heat conductive sheet or a heat conductive grease is provided on a top surface of the support. The probe card is provided with a plurality of the probe portion,
The support comprises a plurality of supports corresponding to the plurality of probe parts,
Inside each of the supports,
A cooling mechanism for cooling each of the supports by flowing a refrigerant;
A heater for heating each of the supports by applying a voltage;
The electronic device testing apparatus according to claim 1, further comprising a temperature adjustment mechanism including a temperature sensor disposed on each of the supports. A step of horizontally aligning a stage on which a wafer on which an electronic device is formed is mounted with respect to a probe portion provided on a probe card fixed to a probe fixing portion located on an upper portion facing the stage;
Raising the stage and bringing the measurement target part of the wafer into contact with and pressing the probe part to make electrical contact;
Supporting the pressing force of the probe card on the wafer by raising a support disposed at a position where the central axis of the probe unit and the central axis of the probe unit coincide with each other and contacting the lower surface of the stage; A test method characterized by comprising:

Images