201229535 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於對半導體元件、特別是對功率電晶 體等之電力用半導體元件的電性特性作試驗之半導體測定 »++* pcet 裝置。 【先前技術】 功率電晶體、整流二極體、閘流電晶體、功率 MOSFET等之電力用半導體元件，係以發電或送電等之電 力領域爲首，而非常廣範圍地被使用在電性鐵路領域、汽 車、家庭用電器製品等之中，且亦提案有多數之對於其之 電力特性作試驗的測定裝置。 例如，在專利文獻1中，係揭示有一種測定裝置，其 係設置有：可自由上下移動之背面電極針、和在上部電極 針之間而將被形成有半導體元件的晶圓作支持之晶圓支持 框，將晶圓支持框作爲加壓（forcing )端子，並將背面電 極作爲感測（sensing )端子，而在被試驗半導體元件之 正背面處取得凱文接觸。又，在專利文獻2中，係提案有 一種測定裝置，其係藉由晶圓支持器來支持被形成有被試 驗半導體元件之晶圓的外緣部，並使從晶圓之背面而作接 觸之探針的接觸面積成爲和被試驗半導體元件之背面的面 積相等，而檢測出半導體元件之背面的問題。進而，在專 利文獻3中，係揭示有一種試驗裝置，其係經由設置對於 從上下而接觸半導體晶圓之探針的可動量作控制之控制手 -5- 201229535 段，而成爲就算是對於厚度爲薄之晶圓，亦能夠以適當之 推壓力來使探針作接觸。 但是，在此些之先前技術的測定裝置或者是試驗裝置 中，由於係經由晶圓支持框或者是晶圓支持器等而將晶圓 從其之外緣來作支持，因此，若是晶圓之厚度變薄，則晶 圓自身會彎曲，而有著無法在探針和半導體元件的電極之 間進行正確之接觸的問題。又，晶圓支持框或者是晶圓支 持器，由於係僅與晶圓之外緣部相接，因此，亦有著難以 透過晶圓支持框或者是晶圓支持器來進行晶圓之溫度控制 的缺點。 另一方面，在專利文獻4以及專利文獻5中，係分別 揭示有測定裝置以及試驗裝置，該些係藉由使被稱作平台 之晶圓支持台和晶圓之背面全體作接觸並支持晶圓，而成 爲就算是薄的晶圓亦不會發生彎曲。在此些之測定裝置或 者是試驗裝置中，晶圓之背面電極和探針之間的接觸，係 設爲：在前述平台處預先形成複數之插入孔，而在測定時 ，使探針一直移動至位於被試驗半導體元件之略正下方處 的插入孔之下方，並在該位置處使探針上升，而使探針與 晶圓之背面電極作接觸（專利文獻4)，或者是，在被設 置於平台處之複數的插入孔之各個處，預先插入接觸銷， 而在測定時，使接觸片一直移動至位於被試驗半導體元件 之略正下方處的接觸銷之下方，並在該位置處使接觸片上 升，來將正上方之接觸銷上推，而與晶圓之背面電極作接 觸（專利文獻5 )。藉由此，在此些之測定裝置或者是試 -6- 201229535 驗裝置中，測定電流係在晶圓背面電極之厚度方向上流動 ，從被試驗半導體元件之正背面起直到與探針間之接觸點 處爲止的電位差，係並不會有作爲阻抗量而與測定値相重 疊的情況，因此，係能夠進行精確度爲高之測定。 但是，在專利文獻4以及專利文獻5所揭示之測定裝 置以及試驗裝置中，若是將試驗對象晶圓切換爲新的晶圓 ，或者是在同一個之試驗對象晶圓上而將被試驗半導體元 件切換至下一個半導體元件，則係有必要配合於此而將測 定用之探針或者是接觸片移動至位於新的被試驗半導體元 件之略正下方處的插入孔或者是接觸銷之下，該移動位置 之特定作業係爲繁雜’並且，亦需要實際地將探針或者是 接觸片移動至特定之位置處的移動機構，同時，在移動中 亦會耗費時間，因此，係有著測定效率變差的問題。 [先前技術文獻] [專利文獻] [專利文獻1]日本實公平4- 14933號公報 [專利文獻2]日本特開2000-114325號公報 [專利文獻3]日本特開2003-332395號公報 [專利文獻4]日本實開平3-45643號公報 [專利文獻5]日本特開2004-311799號公報 【發明內容】 [發明所欲解決之課題] 201229535 本發明，係爲用以解決上述先前技術之半導體測定裝 置的問題或缺點所進行者，其課題，係在於提供一種：就 算是厚度爲薄之試驗對象晶圓，亦能夠並不使其彎曲地來 作支持，並且能夠藉由簡單之構造來使探針確實且簡便地 與試驗對象晶圓之背面電極作接觸的半導體測定裝置。 [用以解決課題之手段] 本發明者們，係爲了解決上述課題，而努力進行硏究 ，其結果，係發現了：從先前技術起，爲了將試驗對象晶 圓作暫時性支持而被使用之吸盤銷，係貫通晶圓吸盤並相 對於晶圓吸盤而相對性地作上下移動，並在對於此事作注 目之後，得知了：若是使探針內插於此吸盤銷之內部，並 且將作了內插的探針設爲能夠相對於晶圓吸盤而相對性地 作上下方向移動，則能夠在使用具備有支持試驗對象晶圓 之支持面的晶圓吸盤的同時，亦藉由簡單的構造來使下探 針與試驗對象晶圓之背面電極簡便地作接觸。 亦即是，本發明，係爲經由提供下述之半導體測定裝 置’而解決上述之課題，該半導體測定裝置，係爲使探針 與被形成在晶圓上之複數的半導體元件之各個的表面電極 和前述晶圓之背面電極的各個作接觸，並對於半導體元件 之特性作試驗的半導體測定裝置，其特徵爲，具備有：晶 圓吸盤’係具備有支持試驗對象晶圓之支持面；和至少3 根之吸盤銷，係於上下方向而貫通前述晶圓吸盤；和第1 移動機構’係使前述吸盤銷相對於前述晶圓吸盤而相對性 -8- 201229535 地在上下方向移動；和至少1根的下探針，係被內插於前 述吸盤銷之內側；和第2移動機構，係使前述下探針相對 於前述晶圓吸盤而相對性地在上下方向移動；和第3移動 機構，係使前述晶圓吸盤，與前述吸盤銷以及前述下探針 —同地，相對於位置在前述晶圓吸盤之上部的上探針而相 對性地在上下方向以及水平方向上移動；和測試裝置，係 被與前述上探針以及前述下探針作電性連接。 在本發明之半導體測定裝置中，由於如同上述一般， 係在至少3根之吸盤銷中的至少一根處，內插有下探針， 並且設爲使此下探針能夠相對於晶圓吸盤而相對性地在上 下方向移動，因此，在使用前述吸盤銷而將試驗對象晶圓 載置、支持於晶圓吸盤之支持面上後，經由使內插於吸盤 銷中之下探針上升’係能夠使下探針與試驗對象晶圓之背 面電極作接觸。 下探針，只要爲1根以上即可，但是，亦可爲2根或 者是3根以上。若是下探針爲2根或者是2根以上，則由 於經由對於2根的下探針間之導通的有無作調查，係能夠 檢測出晶圓之有無、或者是對於下探針和晶圓之背面電極 間的接觸狀態之良否、亦或是測試裝置的動作之良否作確 認’故爲便利。另外，當吸盤銷之直徑爲較大的情況時， 雖然亦可設爲在1根的吸盤銷內而內插複數根之下探針， 但是’通常係以在1根的吸盤銷內而內插1根的下探針爲 理想。 又，吸盤銷’在將試驗對象晶圓支持在其之上端的必 -9 - 5 201229535 要性上，係至少需要3根。雖然亦可設置4根以上之吸盤 銷’但是’通常只要3根便已足夠。當吸盤銷爲3根的情 況時’各吸盤銷，係以使其之上端在俯視時而形成正三角 形的方式來以等間隔作配置爲理想。不論如何，3根或者 是4根以上之吸盤銷的上端面，均係以能夠與試驗對象晶 圓之背面良好地作接觸的方式而位置在單一平面上爲理想201229535 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor measurement »++* pcet device for testing electrical characteristics of a semiconductor element, particularly a power semiconductor element such as a power transistor. . [Prior Art] Power semiconductor components such as power transistors, rectifier diodes, thyristor transistors, and power MOSFETs are mainly used in electric power fields such as power generation and power transmission, and are widely used in electric railways. Among the fields, automobiles, household electrical appliances, and the like, many measuring devices for testing their electrical characteristics have also been proposed. For example, Patent Document 1 discloses a measuring device provided with a back electrode needle that can be moved up and down and a wafer that is supported by a wafer in which a semiconductor element is formed between the upper electrode pins. The circular support frame has a wafer support frame as a forcing terminal and a back electrode as a sensing terminal, and a Kevin contact is obtained at the front side of the semiconductor element to be tested. Further, Patent Document 2 proposes a measuring device that supports an outer edge portion of a wafer on which a semiconductor element to be tested is formed by a wafer holder and makes contact from the back surface of the wafer. The contact area of the probe is equal to the area of the back surface of the semiconductor element to be tested, and the problem of the back surface of the semiconductor element is detected. Further, in Patent Document 3, there is disclosed a test apparatus which is formed by controlling a movable hand for controlling a movable amount of a probe which contacts a semiconductor wafer from above and below, and is even thicker. For thin wafers, the probe can also be contacted with appropriate push pressure. However, in the prior art measuring device or the testing device, since the wafer is supported from the outer edge thereof via a wafer support frame or a wafer holder, etc., if it is a wafer When the thickness is thinned, the wafer itself is bent, and there is a problem that it is impossible to make a proper contact between the probe and the electrodes of the semiconductor element. Moreover, since the wafer support frame or the wafer holder is only connected to the outer edge of the wafer, it is difficult to control the temperature of the wafer through the wafer support frame or the wafer holder. Disadvantages. On the other hand, in Patent Document 4 and Patent Document 5, there are disclosed a measuring device and a testing device which respectively contact a wafer support table called a platform and a back surface of the wafer and support the crystal. Round, and even a thin wafer will not bend. In the measuring device or the testing device, the contact between the back electrode of the wafer and the probe is such that a plurality of insertion holes are formed in advance at the platform, and the probe is moved all the time during the measurement. To the underside of the insertion hole slightly below the semiconductor element to be tested, and to raise the probe at this position, the probe is brought into contact with the back electrode of the wafer (Patent Document 4), or Provided at each of the plurality of insertion holes at the platform, the contact pins are pre-inserted, and in the measurement, the contact piece is moved all the way to the contact pin located slightly below the tested semiconductor element, and at the position The contact piece is raised to push up the contact pin directly above, and is in contact with the back electrode of the wafer (Patent Document 5). Therefore, in the measuring device or the testing device of the test-6-201229535, the current is measured to flow in the thickness direction of the back electrode of the wafer, from the front side of the semiconductor element to be tested to the space between the probe and the probe. The potential difference from the contact point does not overlap with the measured enthalpy as the amount of impedance. Therefore, it is possible to perform measurement with high accuracy. However, in the measurement device and the test device disclosed in Patent Document 4 and Patent Document 5, if the test target wafer is switched to a new wafer or the same test target wafer is to be tested, the semiconductor device to be tested Switching to the next semiconductor element, it is necessary to cooperate with the probe or the contact piece for measurement to be placed under the insertion hole or under the contact pin at a position directly under the new test semiconductor element. The specific operation of moving the position is complicated 'and it is also necessary to actually move the probe or the contact piece to the moving mechanism at a specific position, and at the same time, it takes time in the movement, and therefore, the measurement efficiency is deteriorated. The problem. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Publication No. Hei No. 2000-114325 [Patent Document 3] JP-A-2003-332395 (Patent Document 3) [Problems to be Solved by the Invention] 201229535 The present invention is a semiconductor for solving the above prior art. The problem of the measurement device and the problem of the measurement device is that it is possible to provide a test wafer having a small thickness, without being bent, and by a simple structure. A semiconductor measuring device in which the probe is reliably and easily brought into contact with the back electrode of the test wafer. [Means for Solving the Problems] The inventors of the present invention have made an effort to solve the above problems, and as a result, have found that they have been used for temporary support of test wafers from the prior art. The suction pin is relatively movable up and down with respect to the wafer chuck through the wafer chuck, and after paying attention to the matter, it is known that if the probe is inserted into the inside of the suction pin, By inserting the interpolated probe in a vertical direction relative to the wafer chuck, it is possible to use a wafer chuck having a support surface for supporting the test wafer, and also by simple The structure is such that the lower probe is easily brought into contact with the back electrode of the test wafer. In other words, the present invention solves the above problems by providing a semiconductor measuring device that is a surface of a probe and a plurality of semiconductor elements formed on a wafer. A semiconductor measuring device in which an electrode and a back surface electrode of the wafer are in contact with each other and a characteristic of the semiconductor element is characterized in that the wafer chuck is provided with a support surface for supporting a test target wafer; At least three suction pin pins are inserted through the wafer chuck in a vertical direction; and the first moving mechanism is configured to move the suction pin in a vertical direction with respect to the wafer chuck relative to the wafer chuck -8-201229535; and at least One lower probe is inserted inside the suction pin; and the second moving mechanism relatively moves the lower probe in the vertical direction with respect to the wafer chuck; and the third moving mechanism Passing the wafer chuck in the same manner as the suction pin and the lower probe, relative to the upper probe positioned above the wafer chuck Moving the lower direction and a horizontal direction; and testing means are connected to the probe system for electrical resistance at the probe and the. In the semiconductor measuring device of the present invention, as described above, at least one of the at least three suction pin pins is inserted with the lower probe, and is configured to enable the lower probe to be opposed to the wafer suction cup. The relative movement is performed in the vertical direction. Therefore, after the test target wafer is placed on the support surface of the wafer chuck by using the suction pin, the probe is lifted by inserting the probe into the suction pin. The lower probe can be brought into contact with the back electrode of the test wafer. The number of the lower probes may be one or more, but it may be two or three or more. If the number of the lower probes is two or more, it is possible to detect the presence or absence of the wafer or the lower probe and the wafer by investigating the presence or absence of conduction between the two lower probes. Whether the contact state between the back electrodes is good or not, or whether the operation of the test device is good or not, is convenient. In addition, when the diameter of the suction cup pin is large, it is also possible to insert a plurality of lower probes in one of the suction cup pins, but 'usually inside one of the suction cup pins It is ideal to insert a lower probe. Further, the chuck pin ' requires at least three in order to support the test wafer at its upper end. Although it is also possible to provide more than four suction pin pins 'but' usually only three are sufficient. When the number of the suction cup pins is three, it is preferable that the respective suction pin pins are arranged at equal intervals so that the upper ends thereof form a positive triangle shape in plan view. In any case, the upper end faces of the three or more suction pin pins are ideally positioned on a single plane so as to be in good contact with the back surface of the test object crystal.
Q 本發明之半導體測定裝置，在其中一種理想形態中， 前述晶圓吸盤係爲導電性，並具備有被連接於前述晶圓吸 盤之中央部處的力線（force line )、和被與前述下探針 作連接之感測線（sense line)，並且，前述上探針，係 由力側上探針和感測側上探針所成，並具備有被與前述力 側上探針作連接之力線、和被與前述感測側上探針作連接 之感測線。各感測線以及各力線，係被與前述測試裝置作 連接。當本發明之半導體測定裝置爲具備有此種力線以及 感測線的情況時，由於係能夠藉由凱文連接來作更正確的 測定，故爲理想。 進而，本發明之半導體測定裝置，在其中一種理想形 態中，前述吸盤銷，係具備有：當藉由其之上端部來支持 試驗對象晶圓時，對於前述試驗對象晶圓作吸引支持之吸 引用的孔。藉由此，係能夠使由吸盤銷所致之試驗對象晶 圓的支持成爲更加確實。 進而，本發明之半導體測定裝置，在其中一種理想形 態中，係具備有將前述晶圓吸盤之前述支持面作加熱或者 -10- 201229535 是冷卻之加熱手段以及/或者是冷卻手段。當本發明之半 導體測定裝置具備有此種加熱手段以及/或者是冷卻手段 的情況時，由於係能夠對於晶圓吸盤之支持面的溫度作適 當控制，並對於所期望之溫度或者是溫度變化時之半導體 元件的電性特性作試驗，故爲便利。 另外，本發明之半導體測定裝置所作爲對象之半導體 元件，只要該些係爲被形成在晶圓上，並且能夠使探針與 各半導體元件上之電極和晶圓之背面電極作接觸而對於其 之電性特性作試驗，則不論是何種元件均可，但是，當將 —般被稱作功率元件之功率電晶體、功率MOSFET、閘流 電晶體、整流二極體、絕緣閘雙極電晶體、雙向三極體（ TRIAC)等之電力用半導體元件作爲對象的情況時，本發 明之半導體測定裝置以及半導體測定方法係最爲有效。 [發明效果] 若依據本發明之半導體測定裝置，則在使用吸盤銷而 將試驗對象晶圓載置在晶圓吸盤之支持面上，並經由晶圓 吸盤來作了支持後，只要使被內插於吸盤銷中之下探針朝 向試驗對象晶圓而上升，便能夠使下探針與試驗對象晶圓 之背面電極作接觸。因此，若依據本發明之半導體測定裝 置’則能夠得到下述之優點：亦即是，並不會有試驗對象 晶圓由於自身重量而彎曲之虞，且能夠以簡單之構成來迅 速地使探針從試驗對象晶圓之表、背面來作接觸，並對於 被形成在晶圓上之半導體元件的電性特性作試驗。又，當 -11 - 201229535 在本發明之半導體測定裝置處，設置有對於其之試驗對象 晶圓的支持面作加熱或者是冷卻之加熱手段以及/或者是 冷卻手段的情況時，係能夠得到下述之優點：亦即是，能 夠對於支持面的溫度作適當控制，並對於所期望之溫度或 者是溫度變化時之半導體元件的電性特性作試驗。 【實施方式】 以下，使用圖面來對於本發明作詳細說明，但是，當 然的’本發明係不被該些圖示者所限定。 圖1，係爲對於本發明之半導體測定裝置的其中一例 作展示之部分剖面側面圖。於圖1中，1係爲本發明之半 導體測定裝置’ 2係爲試驗對象晶圓，.3係爲晶圓吸盤，4 係爲支持試驗對象晶圓2之晶圓吸盤3的支持面，5a、5b 、5c係爲吸盤銷，6係爲吸盤銷基底板。於圖1中，在吸 盤銷5 a〜5 c中’僅有吸盤銷5 a和5 c係以剖面作展示。 又’如圖示一般，吸盤銷5a〜5c，係於上下方向而貫通 晶圓吸盤3。7 ’係爲使吸盤銷5 a〜5 c與吸盤銷基底板6 一同地而相對於晶圓吸盤3來在上下方向移動之第1移動 機構’並被安裝在晶圓吸盤基底板8上。 在圖1所示之狀態下，吸盤銷5a〜5c之上端面，係 位在相較於支持面4而更若干朝向下方下降了的位置處， 試驗對象晶圓2之背面，係與晶圓吸盤3之支持面4作接 .觸。另外’在本例中，吸盤銷5a〜5c雖然係爲3根，但 是’亦可爲4根或者是5根以上。但是，吸盤銷5a〜5c -12- 201229535 ，爲了在其之上端面爲位在較支持面4而更上方的狀態下 來將試驗對象晶圓2安定地作支持，係至少需要3根。又 ，在圖示之例中，.雖係設爲經由第1移動機構7來使吸盤 銷5a〜5c相對於晶圓吸盤3而在上下方向移動，但是， 只要吸盤銷5a〜5c爲相對於晶圓吸盤3而在上下方向移 動即可，亦可設爲使晶圓吸盤3相對於吸盤銷5a〜5c而 在上下方向移動。 9a、9b、9c，係爲分別被內插在吸盤銷 5a、5b、5c 中之下探針，10係爲下探針基底板，11係爲使下探針9a ' 9b ' 9c與下探針基底板1 〇 —同地來相對於晶圓吸盤3 而在上下方向移動之第2移動機構，並與第1移動機構7 相同的，被安裝在晶圓吸盤基底板8上。另外，在圖示之 例中’下探針9a〜9c，係在吸盤銷5a〜5c之各個處而各 被內插有1根，但是，並非一定需要在全部的吸盤銷5a 〜5c內而均內插有下探針9a〜9c，亦可設爲僅在3根的 吸盤銷5a〜5c中之2根或者是1根處而內插有下探針。 又’在圖示之例中，雖係設爲經由第2移動機構11來使 下探針9a〜9c相對於晶圓吸盤3而在上下方向移動，但 是’只要下探針9a〜9c爲相對於晶圓吸盤3而在上下方 向移動即可，亦可設爲使晶圓吸盤3相對於下探針9a〜 9c而在上下方向移動。 在本例中，晶圓吸盤3係爲導電性，在晶圓吸盤3之 下面中央部處，係被連接有力線1M。力線12f之另外一 端’係被與測試裝置T作連接。1 2s，係爲感測線，感測 -13- 201229535 線12s之其中一端，係經由下探針基底板1〇而被與下探 針9a〜9c作連接，另外—端，係被與測試裝置τ作連接 。13，係爲 ΧΥΖ0 平台，13a、13b、13c、13d，係分別爲 X軸移動機構、Y軸移動機構、Z軸移動機構以及β軸移 動機構。ΧΥΖ0平台13，係構成使晶圓吸盤3和吸盤銷 5a〜5c以及下探針9a〜9c —同地來相對於位置在晶圓吸 盤3之上部的上探針而相對性地於上下方向以及水平方向 移動之第3移動機構。 1 4s ’係爲感測側上探針，！ 4f，係爲力側上探針， 1 5s，係爲將感測側上探針1 4s和測試裝置τ作連接之感 測線，1 5 f ’係爲將力側上探針1 4f和測試裝置τ作連接 之力線。16係爲探針機器臂（pr〇be manipulator) ，17 係爲探針基底板。另外，在圖示之例中，作爲上探針，係 設置有感測側上探針1 4 s以及力側上探針1 4 f，並藉由其 與被和下探針9a〜9c以及晶圓吸盤3之下面中央部作了 連接的力線12f’來構成凱文連接，但是，在本發明之半 導體測定裝置1中的探針之連接，係並不被限定於凱文連 接，亦可設爲藉由下探針9a〜9c和1根的上探針所構成 之單連接。又，在圖示之例中，感測側上探針1 4s和力側 上探針14f，係被安裝在探針機器臂16上，但是，上探 針係亦可被安裝在探針卡上。 圖2，係爲圖中之晶圓吸盤3的部分剖面擴大圖，在 與圖1中相同之構件處，係附加相同之符號。於圖2中， 18a、18b、18c，係爲被設置在晶圓吸盤3之支持面4上 •14- 201229535 的吸引溝，19，係爲被內藏於晶圓吸盤3中之加熱以及/ 或者是冷卻手段。作爲加熱以及/或者是冷卻手段，只要 能夠對於晶圓吸盤3進行加熱或者是冷卻，則不論使用何 種物品均可，例如，若是僅進行加熱，則只要使用將電性 能量變換爲熱能量之加熱器即可，又，若是進行加熱以及 冷卻之雙方，則例如係可使用利用有帕耳帖效果之帕耳帖 元件等。 圖3，係爲將吸盤銷5 a作擴大之剖面圖。如圖中所 示一般，吸盤銷5a，係具備有由外筒20和與外筒20同 軸之內筒21所成的雙重構造，在外筒20和內筒21之間 ，係被形成有空氣通路22。空氣通路22之其中一端，係 從外筒20以及內筒21之上端起朝向上方外部而開口，另 外一端，係經由管路23而被與未圖示之適當的吸引裝置 作連接。藉由使吸引裝置動作並對空氣通路22內進行吸 引，吸盤銷5a，係能夠在外筒20和內筒21之上端而將 試驗對象晶圓作吸附、支持。在內筒21之內側，係被內 插有下探針9a，下探針9a，係能夠在內筒2 1之內側而自 由地於上下方向移動。另外，下探針9a，係經由未圖示 之彈性手段而被朝向上方作推壓。作爲下探針9a，係亦 可使用於其自身之內部而具備有彈性推壓手段之例如 POGO PIN。另外，以上雖係僅針對吸盤銷5a而作了說明 ’但是，關於其他的吸盤銷5b、5c ’係亦爲相同。 圖4，係爲晶圓吸盤3之平面圖。如圖中所示一般， 在晶圓吸盤3之支持面4處，係以同心狀而被形成有吸引 -15- 201229535 溝18a、18b、18c，各吸引溝18a〜18c，係經由聯絡溝24 而成爲通連狀態，聯絡溝24之前端，係經由管路23而被 與未圖示之吸引裝置作連接》藉由使吸引裝置動作並對吸 引溝18a、18b、18c內進行吸引，晶圓吸盤3，係能夠在 支持面4上而將試驗對象晶圓作吸附、支持。 圖5，係爲對於晶圓吸盤3、吸盤銷5a〜5c以及下探 針9a〜9c之間的位置關係作展示之分解立體圖。如圖中 所示一般，在晶圓吸盤3處，係被形成有於上下方向而貫 通晶圓吸盤3之孔3a、3b、3c，吸盤銷5a、5b、5c，係 分別被配置在對貫通孔3a、3b、3c作貫通之位置處。又 ，下探針9a、9b、9c，係分別被設置在將吸盤銷5a、5b 、5 c作貫通之位置處。在晶圓吸盤3之下側中央部處， 係被連接有力線12f，在下探針9a、9b、9c處，係被連接 有感測線1 2 s。2，係爲試驗對象晶圓。 接著，使用圖6〜圖9，對於本發明之半導體測定裝 置1的動作作說明。圖6，係對於使第1移動機構7朝圖 中箭頭方向動作並使吸盤銷5a〜5c上升至較晶圓吸盤3 之支持面4而更上方處的狀態作展示。在此狀態下，使未 圖示之吸引裝置動作，並開始吸盤銷5a〜5c之前述的各 空氣通路22之吸引。另一方面，經由適當之搬送臂而被 搬送至吸盤銷5a〜5c上之試驗對象晶圓2，係緩慢地下 降並被載置於吸盤銷5a〜5c上，由於吸盤銷5a〜5c之空 氣通路22係爲吸引狀態，因此，試驗對象晶圓2係被吸 附、支持在吸盤銷5a〜5c上。此時，下探針9a〜9c，其 -16- 201229535 之上端係位在較支持面4而下降至更下方之位置處。又， 使未圖示之吸引裝置動作’，並開始對於被形成在支持面4 上之吸引溝18a〜18c之吸引。2a、2b、2c.··，係爲被形 成在試驗對象晶圓2上之半導體元件。 若是試驗對象晶圓2被吸附、支持在吸盤銷5a〜5c 上’則如圖7中所示一般，使第1移動機構7朝向圖中箭 頭方向動作’並使吸盤銷5a〜5c下降，而將試驗對象晶 圓2載置在晶圓吸盤3之支持面4上。被形成在支持面4 上之吸引溝18a〜18c，由於係爲吸引狀態，因此，試驗 對象晶圓2，係被吸引、支持在支持面4上。同時，下側 之力線12f，係被與試驗對象晶圓2之背面電極作電性連 接。如此這般，若是從吸盤銷5a〜5c所對於支持面4之 試驗對象晶圓2的遞交結束，則吸盤銷5a〜5c之空氣通 路22的吸引係被停止，吸盤銷5a〜5c，係下降至使其之 下端成爲較晶圓吸盤3之支持面4而更些許下方的位置處 ，並在該位置處停止。 若是試驗對象晶圓2，係被吸附、支持在支持面4上 ，且下側之力線1 2 f係被與試驗對象晶圓2之背面電極作 電性連接，則如圖8中所示一般’使第2移動機構1 1朝 圖中箭頭方向動作，並使下探針9a〜9c上升，而使其之 前端與試驗對象晶圓2之背面電極接觸。藉由此，下側之 感測線12s，係成爲被與試驗對象晶圓2之背面電極作了 電性連接。如同前述一般，由於下探針9a〜9c係經由彈 性手段而被朝向上方推壓，因此，下探針9a〜9c，其之 -17- 201229535 前端係被推壓至較與試驗對象晶圓2之背面電極作了接觸 的位置而更些許下方處，下探針’9 a〜9c和試驗對象晶圓 2之背面電極的接觸（亦即是下側之感測線1 2 s和試驗對 象晶圓2之背面電極間的電性接觸）'係被確實地進行。 如同上述一般，若是達成了下探針^ 9a〜9c和試驗對 象晶圓2之背面電極間的接觸，則XYZ 0平台13之X軸 移動機構13a、Y軸移動機構13b以及0軸移動機構i3d 係動作，並進行將被支持在晶圓吸盤3之支持面4上的試 驗對象晶圓2之X、Y、6>位置對位於特定之位置處的定 位動作。另外，此試驗對象晶圓2之定位、和下探針9 a 〜9c之對於試驗對象晶圓2的背面電極之接觸，不論是 先進行何者均可。 接著，使ΧΥΖ0平台13之X軸移動機構i3a以及γ 軸移動機構13b動作，並以成爲試驗對象之半導體元件 2 d會相對於感測側上探針1 4 s以及力側上探針1 4 f而到達 測定位置處的方式，來使試驗對象晶圓2與晶圓吸盤3 — 同地作移動。若是成爲試驗對象之半導體元件2d到達特 定之測定位置處，則如圖9中所示一般，使z軸移動機構 13c動作，並使晶圓吸盤3與吸盤銷5a〜5c以及下探針 9a〜9c 一同地而朝向圖中之以箭頭所示的上方作移動， 而使被形成在試驗對象晶圓2上之半導體元件2d的表面 電極和感測側上探針1 4 s以及力側上探針1 4 f作接觸，並 經由測試裝置T來對於半導體元件2d之電性特性作測定 -18- 201229535 若是半導體元件2d之測定結束，則使χγζ 0平台！ 3 之Ζ軸移動機構13c動作，並使晶圓吸盤3暫時下降，接 著，使X軸移動機構13a或者是Y軸移動機構13b亦或 是其之雙方動作，而例如以使下一個半導體元件2c到達 測定位置處的方式來使晶圓吸盤3移動。若是半導體元件 2c到達測定位置處，則與前述相同的，使Z軸移動機構 13c動作，並使晶圓吸盤3與吸盤銷5a〜5c以及下探針 9a〜9c 一同地而朝向圖中之以箭頭所示的上方作移動， 而使半導體元件2c的表面電極和感測側上探針14s以及 力側上探針14f作接觸，並經由測試裝置T來對於半導體 元件2 c之電性特性作測定。 反覆進行此種動作，若是試驗對象晶圓2上之全部的 半導體元件之測定均結束，則使下探針9a〜9c下降，並 解除下側感測線1 2 s和試驗對象晶圓2之背面電極間的電 性連接。接著，停止支持面4上之吸引溝18a〜18c之吸 引’並且’開始吸盤銷5a〜5c之空氣通路22的吸引，而 一面使吸盤銷5a〜5c上升並將試驗對象晶圓2作吸附、 支持’ 一面舉升至對於搬送臂等作遞交之位置處。當試驗 對象晶圓2從支持面4上而作了分離時，下側力線1 2f和 試驗對象晶圓2之背面電極間的電性連接係被解除。 如同上述一般，若依據本發明之半導體測定裝置1, 則在經由吸盤銷5 a〜5 c而將試驗對象晶圓2吸附、支持 於晶圓吸盤3之支持面4上後，藉由使下探針9a〜9c上 升之簡單的動作，便能夠使下探針9a〜9c與試驗對象晶 -19 - 201229535 圓2之背面電極作接觸，而能夠使下側感測線1 2s與試驗 對象晶圓2之背面電極作電性接觸.。 圖10，係爲對於本發明之半導體測定裝置1的另外 —例之重要部分作展示的立體圖，對於至此爲止之相同的 構件，係附加相同之符號。在本例中，與先前之例相異之 處，係在於：於吸盤銷基底板6處，設置有第4吸盤銷 5d，於下探針基底板10處，設置有第4下探針9d。亦即 是，在本例中，代替於使力線1 2f和晶圓吸盤3之下面中 央部作連接，係設置第4之下探針9d，並將力線12f.與 此作連接。又，在晶圓吸盤3處，係與第4吸盤銷5d相 對應，而形成有第4貫通孔3d。 若依據此種本例之半導體測定裝置1，則在使試驗對 象晶圓2被吸附、支持於晶圓吸盤3之支持面4上之後， 藉由使下探針9a〜9d朝向試驗對象晶圓2而上升，係能 夠使與感測線1 2s作連接之下探針9a〜9c和試驗對象晶 圓2之背面電極作接觸，同時，係能夠使與力線1 2 f作連 接之下探針9d和試驗對象晶圓2之背面電極作接觸。 [產業上之利用可能性] 如上所述一般，若依據本發明之半導體測定裝置，則 係藉由晶圓吸盤之支持面來將試驗對象晶圓之背面全體作 支持，並且僅需使下探針朝向試驗對象晶圓而上升，便能 夠實現下探針和試驗對象晶圓之背面電極之間的接觸，因 此，係能夠防止試驗對象晶圓之彎曲，進而，並不需要特 -20- 201229535 定出移動位置並使下探針作移動，而能夠藉由簡單的構成 來使對於半導體元件之高效率的測定成爲可能。故而，本 發明之半導體測定裝置，對於半導體元件、特別是對於今 後用途應會更加擴大的電力用半導體元件之品質以及性能 的提升，係能夠賦予大幅度的幫助，而具備有極大之產業 上利用可能性。 【圖式簡單說明】 [圖1]對於本發明之半導體測定裝置的其中一例作展 示之部分剖面側面圖。 [圖2]晶圓吸盤部分之部分剖面擴大圖。 [圖3 ]晶圓銷之擴大剖面圖。 [圖4]晶圓吸盤之平面圖。 [圖5]對於晶圓吸盤、吸盤銷以及下探針之間的位置 關係作展示之分解立體圖。 [圖6]對於本發明之半導體測定裝置的動作作說明之 部分剖面側面圖。 [圖7]對於本發明之半導體測定裝置的動作作說明之 部分剖面側面圖。 [圖8]對於本發明之半導體測定裝置的動作作說明之 部分剖面側面圖。 [圖9]對於本發明之半導體測定裝置的動作作說明之 部分剖面側面圖。 [圖10]對於本發明之半導體測定裝置的另外一例之重 -21 · 201229535 要部分作展示的立體β 【主要元件符號說明】 1 :半導體測定裝 2 :試驗對象晶圓 3 :晶圓吸盤 4 :支持面 5a、 5b、 5c、 5d: 6 :吸盤銷基底板 7 :第1移動機構 8 :晶圓吸盤基底 9a、 9b、 9c、 9d: I 〇 :下探針基底相 II :第2移動機相 1 2 f、1 5 f :力線 1 2 s、1 5 s :感測竊 13 : XYZ 0 平台 14s :感測側上探 14f :力側上探針 1 6 :探針機器臂 1 7 :探針基底板 18a、 18b ' 18c、 1 9 :加熱以及/寫 20 :外筒 置 吸盤銷 板 下探針 針 18d :吸引溝 3者是冷卻手段 -22- 201229535 2 1 :內筒 22 :空氣通路 23 :管路 24 :連接溝 T :測試裝置 -23In one preferred embodiment of the semiconductor measuring device of the present invention, the wafer chuck is electrically conductive, and includes a force line connected to a central portion of the wafer chuck, and a force line The lower probe is connected to the sense line, and the upper probe is formed by the probe on the force side and the probe on the sensing side, and is provided with the probe on the force side. The force line and the sensing line connected to the probe on the sensing side described above. Each of the sensing lines and the respective force lines are connected to the aforementioned test apparatus. When the semiconductor measuring apparatus of the present invention is provided with such a force line and a sensing line, it is desirable to perform a more accurate measurement by Kevin connection. Further, in a preferred aspect of the semiconductor measuring device of the present invention, the chuck pin includes a suction support for the test target wafer when the test target wafer is supported by the upper end portion thereof. Used holes. Thereby, the support of the test object crystals by the suction pin can be made more reliable. Further, in one of the preferred embodiments of the semiconductor measuring apparatus of the present invention, the heating means for heating the support surface of the wafer chuck or the cooling means for -10 201229535 and/or the cooling means are provided. When the semiconductor measuring device of the present invention includes such a heating means and/or a cooling means, it is possible to appropriately control the temperature of the support surface of the wafer chuck and to change the desired temperature or temperature. The electrical characteristics of the semiconductor element are tested, which is convenient. Further, the semiconductor element to be used in the semiconductor measuring device of the present invention is formed so as to be formed on the wafer, and the probe can be brought into contact with the electrode on each semiconductor element and the back electrode of the wafer. The electrical characteristics are tested, no matter what kind of components, but when it is called power transistors, power MOSFETs, thyristors, rectifier diodes, insulated gates, etc. In the case of a semiconductor device for power such as a crystal or a triac (TRIAC), the semiconductor measuring device and the semiconductor measuring method of the present invention are most effective. [Effect of the Invention] According to the semiconductor measuring device of the present invention, the test target wafer is placed on the support surface of the wafer chuck by using the chuck pin, and is supported by the wafer chuck, and then interpolated. The probe is raised toward the test wafer under the chuck pin, so that the lower probe can be brought into contact with the back electrode of the test wafer. Therefore, according to the semiconductor measuring device of the present invention, it is possible to obtain the advantage that the test target wafer does not bend due to its own weight, and the probe can be quickly formed with a simple configuration. The needle is brought into contact from the front and back surfaces of the wafer to be tested, and the electrical characteristics of the semiconductor element formed on the wafer are tested. Further, when the semiconductor measuring device of the present invention is provided with a heating means for heating or cooling the supporting surface of the test target wafer and/or a cooling means, the semiconductor measuring device of the present invention can be obtained. The advantage described is that it is possible to properly control the temperature of the support surface and to test the electrical properties of the semiconductor component at the desired temperature or temperature change. [Embodiment] Hereinafter, the present invention will be described in detail using the drawings, but the invention is not limited by the figures. Fig. 1 is a partial cross-sectional side view showing an example of the semiconductor measuring apparatus of the present invention. In Fig. 1, 1 is a semiconductor measuring device of the present invention 2 is a test wafer, .3 is a wafer chuck, and 4 is a support surface for a wafer chuck 3 supporting a test wafer 2, 5a. 5b, 5c are suction cup pins, and 6 series are suction pin base plates. In Fig. 1, only the suction pin 5a and 5c are shown in cross section in the suction pin 5a to 5c. Further, as shown in the drawing, the suction pin 5a to 5c are inserted in the vertical direction and penetrate the wafer chuck 3. 7' is such that the suction pin 5a to 5c is co-located with the suction pin base plate 6 with respect to the wafer suction cup. The first moving mechanism 'moving in the up and down direction is attached to the wafer chuck base plate 8. In the state shown in FIG. 1, the upper end faces of the chuck pins 5a to 5c are located at positions lower than the support surface 4 and are lowered downward, and the back surface of the test wafer 2 is attached to the wafer. The support surface 4 of the suction cup 3 is connected. Further, in the present embodiment, the number of the suction pin pins 5a to 5c is three, but it may be four or five or more. However, at least three of the suction cup pins 5a to 5c -12 to 201229535 are required to stably support the test target wafer 2 in a state in which the upper end surface thereof is positioned above the support surface 4. Further, in the illustrated example, the suction pins 5a to 5c are moved in the vertical direction with respect to the wafer chuck 3 via the first moving mechanism 7, but the suction pins 5a to 5c are opposed to each other. The wafer chuck 3 may be moved in the vertical direction, or the wafer chuck 3 may be moved in the vertical direction with respect to the chuck pins 5a to 5c. 9a, 9b, 9c are respectively inserted into the lower probe in the suction pin 5a, 5b, 5c, 10 is the lower probe base plate, and 11 is the lower probe 9a ' 9b ' 9c and the lower probe The needle base plate 1 is the second moving mechanism that moves in the vertical direction with respect to the wafer chuck 3 in the same place, and is attached to the wafer chuck base plate 8 in the same manner as the first moving mechanism 7. Further, in the illustrated example, the lower probes 9a to 9c are inserted into each of the suction pin pins 5a to 5c, but they are not necessarily required to be in all of the suction pin 5a to 5c. The lower probes 9a to 9c are inserted, and the lower probes may be inserted only in two or one of the three suction pin pins 5a to 5c. In the example shown in the figure, the lower probes 9a to 9c are moved in the vertical direction with respect to the wafer chuck 3 via the second moving mechanism 11, but 'the lower probes 9a to 9c are opposed to each other. The wafer chuck 3 may be moved in the vertical direction, and the wafer chuck 3 may be moved in the vertical direction with respect to the lower probes 9a to 9c. In this example, the wafer chuck 3 is electrically conductive, and a force line 1M is connected to the lower portion of the wafer chuck 3 at the center. The other end of the force line 12f is connected to the test device T. 1 2s, is the sensing line, sensing one of the 13-201229535 line 12s, connected to the lower probes 9a~9c via the lower probe base plate 1,, the other end, the system and the test device τ is connected. 13, is a ΧΥΖ0 platform, 13a, 13b, 13c, 13d, which are an X-axis moving mechanism, a Y-axis moving mechanism, a Z-axis moving mechanism, and a β-axis moving mechanism, respectively. The 平台0 platform 13 is configured such that the wafer chuck 3 and the chuck pins 5a to 5c and the lower probes 9a to 9c are oppositely positioned in the vertical direction with respect to the upper probe positioned above the wafer chuck 3 and The third moving mechanism that moves in the horizontal direction. 1 4s ' is the probe on the sensing side! 4f, the force side upper probe, 1 5s, is the sensing line connecting the probe 1 4s on the sensing side and the test device τ, and the 1 5 f ' is the force side upper probe 1 4f and the test The device τ acts as a line of force for the connection. The 16-series is a probe robotic arm and the 17-series is a probe base plate. Further, in the illustrated example, as the upper probe, the probe 1 4 s on the sensing side and the probe 1 4 f on the force side are provided, and by the same and the lower and lower probes 9a to 9c The connecting force line 12f' is formed in the lower central portion of the wafer chuck 3 to form a Kevin connection. However, the connection of the probe in the semiconductor measuring device 1 of the present invention is not limited to the Kevin connection. It can be set as a single connection by the lower probes 9a to 9c and one of the upper probes. Further, in the illustrated example, the probe side probe 14s and the force side probe 14f are attached to the probe robot arm 16, but the upper probe system can also be mounted on the probe card. on. Fig. 2 is a partial cross-sectional enlarged view of the wafer chuck 3 in the drawing, and the same reference numerals are attached to the same members as those in Fig. 1. In FIG. 2, 18a, 18b, and 18c are suction grooves provided on the support surface 4 of the wafer chuck 3, and 14 is a heating tank built in the wafer chuck 3 and/or Or it is a means of cooling. As heating and/or cooling means, as long as the wafer chuck 3 can be heated or cooled, no matter what kind of article is used, for example, if only heating is used, the electrical energy is converted into thermal energy. The heater may be used. Further, if both heating and cooling are performed, for example, a Peltier element using a Peltier effect or the like can be used. Fig. 3 is a cross-sectional view showing the suction pin 5a enlarged. As shown in the drawing, the suction pin 5a is provided with a double structure formed by the outer cylinder 20 and the inner cylinder 21 coaxial with the outer cylinder 20, and an air passage is formed between the outer cylinder 20 and the inner cylinder 21. twenty two. One end of the air passage 22 is opened upward from the upper end of the outer cylinder 20 and the inner cylinder 21, and the other end is connected to an appropriate suction device (not shown) via the duct 23. By sucking the suction device and sucking the inside of the air passage 22, the suction pin 5a can suck and support the test wafer at the upper end of the outer cylinder 20 and the inner cylinder 21. Inside the inner cylinder 21, a lower probe 9a is inserted, and the lower probe 9a is freely movable in the vertical direction inside the inner cylinder 21. Further, the lower probe 9a is urged upward by an elastic means (not shown). As the lower probe 9a, for example, a POGO PIN can be provided for its own interior and having an elastic pressing means. Further, although the above description has been made only for the suction pin 5a, the other suction pin 5b, 5c' are also the same. Figure 4 is a plan view of the wafer chuck 3. As shown in the figure, in the support surface 4 of the wafer chuck 3, the suction -15-201229535 grooves 18a, 18b, and 18c are formed concentrically, and the suction grooves 18a to 18c are connected via the communication groove 24 In the connected state, the front end of the communication groove 24 is connected to a suction device (not shown) via the line 23" by operating the suction device and sucking the suction grooves 18a, 18b, and 18c. The chuck 3 is capable of adsorbing and supporting the test wafer on the support surface 4. Fig. 5 is an exploded perspective view showing the positional relationship between the wafer chuck 3, the chuck pins 5a to 5c, and the lower probes 9a to 9c. As shown in the figure, generally, the wafer chuck 3 is formed with holes 3a, 3b, and 3c penetrating the wafer chuck 3 in the vertical direction, and the chuck pins 5a, 5b, and 5c are disposed in pairs. The holes 3a, 3b, and 3c are at positions penetrating therethrough. Further, the lower probes 9a, 9b, and 9c are respectively provided at positions where the chuck pins 5a, 5b, and 5c are penetrated. At the central portion of the lower side of the wafer chuck 3, a force line 12f is connected, and at the lower probes 9a, 9b, 9c, a sensing line 1 2 s is connected. 2, is the test object wafer. Next, the operation of the semiconductor measuring device 1 of the present invention will be described with reference to Figs. 6 to 9 . Fig. 6 is a view showing a state in which the first moving mechanism 7 is moved in the direction of the arrow in the drawing and the chuck pins 5a to 5c are raised above the support surface 4 of the wafer chuck 3. In this state, the suction device (not shown) is operated, and the suction of each of the aforementioned air passages 22 of the suction pin 5a to 5c is started. On the other hand, the test target wafer 2 conveyed to the chuck pins 5a to 5c via the appropriate transfer arm is slowly lowered and placed on the chuck pins 5a to 5c, and the air is sucked by the suction pins 5a to 5c. Since the passage 22 is in a suction state, the test target wafer 2 is adsorbed and supported on the chuck pins 5a to 5c. At this time, the lower probes 9a to 9c, the upper end of the -16-201229535, are located at a position lower than the support surface 4 and descending to the lower side. Further, the suction device (not shown) is operated to start the suction of the suction grooves 18a to 18c formed on the support surface 4. 2a, 2b, 2c, ... are semiconductor elements formed on the wafer 2 to be tested. When the test target wafer 2 is adsorbed and supported on the suction pin 5a to 5c', as shown in Fig. 7, the first moving mechanism 7 is caused to move in the direction of the arrow in the figure, and the suction pin 5a to 5c is lowered. The test wafer 2 is placed on the support surface 4 of the wafer chuck 3. Since the suction grooves 18a to 18c formed on the support surface 4 are in a suction state, the test target wafer 2 is attracted and supported on the support surface 4. At the same time, the lower force line 12f is electrically connected to the back electrode of the test wafer 2. In this manner, when the delivery of the test target wafer 2 to the support surface 4 from the suction pin 5a to 5c is completed, the suction of the air passages 22 of the suction pin pins 5a to 5c is stopped, and the suction pin 5a to 5c are lowered. The lower end is made to be at a position lower than the support surface 4 of the wafer chuck 3, and is stopped at the position. If the test target wafer 2 is adsorbed and supported on the support surface 4, and the lower side force line 1 2 f is electrically connected to the back electrode of the test target wafer 2, as shown in FIG. Generally, the second moving mechanism 1 1 is moved in the direction of the arrow in the drawing, and the lower probes 9a to 9c are raised, and the front end is brought into contact with the back surface electrode of the test wafer 2 . Thereby, the lower sensing line 12s is electrically connected to the back surface electrode of the test wafer 2. As described above, since the lower probes 9a to 9c are urged upward by the elastic means, the lower probes 9a to 9c, the front ends of the -17-201229535 are pushed to the wafer 2 to be tested. The back electrode is in contact with the position of the lower electrode, and the lower probe '9 a to 9c is in contact with the back electrode of the test wafer 2 (that is, the lower side sensing line 1 2 s and the test object wafer) The electrical contact between the back electrodes of 2) was performed reliably. As described above, if the contact between the lower probes 9a to 9c and the back electrode of the test target wafer 2 is achieved, the X-axis moving mechanism 13a, the Y-axis moving mechanism 13b, and the 0-axis moving mechanism i3d of the XYZ 0 platform 13 are obtained. The operation is performed, and the positioning operation of the X, Y, and 6 position of the test target wafer 2 supported on the support surface 4 of the wafer chuck 3 at a specific position is performed. Further, the positioning of the test target wafer 2 and the contact of the lower probes 9a to 9c with respect to the back surface electrode of the test target wafer 2 may be performed first. Next, the X-axis moving mechanism i3a and the γ-axis moving mechanism 13b of the 平台0 stage 13 are operated, and the semiconductor element 2d to be tested is opposed to the probe 1 4 s on the sensing side and the probe 14 4 on the force side. f reaches the measurement position to move the test wafer 2 and the wafer chuck 3 in the same place. When the semiconductor element 2d to be tested reaches a specific measurement position, the z-axis moving mechanism 13c is normally operated as shown in FIG. 9, and the wafer chuck 3 and the chuck pins 5a to 5c and the lower probe 9a are moved. 9c moves toward the top of the figure as indicated by the arrow, and causes the surface electrode of the semiconductor element 2d formed on the test target wafer 2 and the probe 1 4 s on the sensing side and the force side to probe The needle 14 4 is contacted, and the electrical characteristics of the semiconductor element 2d are measured via the test device T. -18-201229535 If the measurement of the semiconductor element 2d is completed, the χγζ 0 platform is made! 3, the axis moving mechanism 13c operates, and the wafer chuck 3 is temporarily lowered, and then the X-axis moving mechanism 13a or the Y-axis moving mechanism 13b or both of them are operated, for example, to make the next semiconductor element 2c The way to the measurement position is made to move the wafer chuck 3 . When the semiconductor element 2c reaches the measurement position, the Z-axis moving mechanism 13c is operated in the same manner as described above, and the wafer chuck 3 is brought together with the chuck pins 5a to 5c and the lower probes 9a to 9c so as to face the figure. Moving upward as indicated by the arrow, the surface electrode of the semiconductor element 2c is brought into contact with the probe 14s on the sensing side and the probe 14f on the force side, and the electrical characteristics of the semiconductor element 2c are made via the test device T. Determination. When the measurement of all the semiconductor elements on the test wafer 2 is completed, the lower probes 9a to 9c are lowered, and the lower sensing line 1 2 s and the back surface of the test wafer 2 are released. Electrical connection between the electrodes. Then, the suction of the suction grooves 18a to 18c on the support surface 4 is stopped and the suction of the air passages 22 of the suction pin pins 5a to 5c is started, and the suction pin 5a to 5c is raised and the test target wafer 2 is sucked. Support 'lift up to the position where the delivery arm is submitted. When the test target wafer 2 is separated from the support surface 4, the electrical connection between the lower side force line 1 2f and the back surface electrode of the test target wafer 2 is released. As described above, according to the semiconductor measuring apparatus 1 of the present invention, after the test target wafer 2 is adsorbed and supported on the support surface 4 of the wafer chuck 3 via the chuck pins 5a to 5c, By the simple operation of raising the probes 9a to 9c, the lower probes 9a to 9c can be brought into contact with the back electrode of the test crystal -19 - 201229535 circle 2, and the lower sensing line 1 2s and the test target wafer can be made. The back electrode of 2 is electrically contacted. Fig. 10 is a perspective view showing another important part of the semiconductor measuring device 1 of the present invention, and the same members are denoted by the same reference numerals. In this example, the difference from the previous example is that a fourth suction pin 5d is provided at the suction pin base plate 6, and a fourth lower probe 9d is provided at the lower probe base plate 10. . That is, in this example, instead of connecting the force line 1 2f to the lower central portion of the wafer chuck 3, the fourth lower probe 9d is provided, and the force line 12f. is connected thereto. Further, at the wafer chuck 3, a fourth through hole 3d is formed corresponding to the fourth chuck pin 5d. According to the semiconductor measuring apparatus 1 of the present example, after the test wafer 2 is adsorbed and supported on the support surface 4 of the wafer chuck 3, the lower probes 9a to 9d are directed toward the test wafer. 2, as it is, the probes 9a to 9c are connected to the back electrode of the test target wafer 2 under the connection with the sensing line 12s, and at the same time, the probe can be connected to the force line 1 2 f 9d makes contact with the back electrode of the test wafer 2. [Industrial Applicability] As described above, in general, in the semiconductor measuring apparatus according to the present invention, the back surface of the wafer to be tested is supported by the support surface of the wafer chuck, and only the downsizing is required. When the needle is raised toward the test wafer, the contact between the lower probe and the back electrode of the test wafer can be realized. Therefore, it is possible to prevent the test wafer from being bent, and further, it is not necessary to have a special -20-201229535 By determining the moving position and moving the lower probe, it is possible to measure the high efficiency of the semiconductor element with a simple configuration. Therefore, the semiconductor measuring device of the present invention can greatly improve the quality and performance of a semiconductor element, particularly a power semiconductor element which is expected to be expanded in the future, and has a great industrial advantage. possibility. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional side view showing an example of a semiconductor measuring apparatus according to the present invention. [Fig. 2] A partial cross-sectional enlarged view of a wafer chuck portion. [Fig. 3] An enlarged sectional view of a wafer pin. [Fig. 4] A plan view of a wafer chuck. [Fig. 5] An exploded perspective view showing the positional relationship between the wafer chuck, the chuck pin, and the lower probe. Fig. 6 is a partial cross-sectional side view showing the operation of the semiconductor measuring apparatus of the present invention. Fig. 7 is a partial cross-sectional side view showing the operation of the semiconductor measuring apparatus of the present invention. Fig. 8 is a partial cross-sectional side view showing the operation of the semiconductor measuring apparatus of the present invention. Fig. 9 is a partial cross-sectional side view showing the operation of the semiconductor measuring apparatus of the present invention. [Fig. 10] Another example of the semiconductor measuring device of the present invention - 21, 201229535 Partially shown as a stereoscopic β [Description of main component symbols] 1 : Semiconductor measuring device 2: Test target wafer 3: Wafer chuck 4 : support surface 5a, 5b, 5c, 5d: 6: suction pin base plate 7: first moving mechanism 8: wafer chuck base 9a, 9b, 9c, 9d: I 〇: lower probe base phase II: second movement Machine phase 1 2 f, 1 5 f: force line 1 2 s, 1 5 s : sensing stealing 13 : XYZ 0 platform 14s : sensing side up 14f : force side upper probe 1 6 : probe robot arm 1 7: probe base plate 18a, 18b '18c, 1 9: heating and/or writing 20: outer cylinder is placed on the suction pin plate lower probe needle 18d: suction groove 3 is a cooling means -22-201229535 2 1 : inner cylinder 22 : Air passage 23: Line 24: Connection groove T: Test device-23