JP5482152B2 - トランス素子とその製造方法 - Google Patents
トランス素子とその製造方法 Download PDFInfo
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- JP5482152B2 JP5482152B2 JP2009269875A JP2009269875A JP5482152B2 JP 5482152 B2 JP5482152 B2 JP 5482152B2 JP 2009269875 A JP2009269875 A JP 2009269875A JP 2009269875 A JP2009269875 A JP 2009269875A JP 5482152 B2 JP5482152 B2 JP 5482152B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Description
本実施例に係るマイクロトランス素子は、半導体プロセスで一般に用いられている方法を用いて製造できるため、製造プロセスが複雑化することがない。半導体層コイル101は、例えば、p型の半導体層10に対して、n型のドーパントをイオン注入し、その後、熱拡散処理することによって形成することができる。トレンチコイル110は、p型の半導体層10に対してトレンチエッチングを行い、トレンチ内に熱酸化等によってトレンチ絶縁膜103を形成した後、導電層104を充填することによって形成することができる。導電層104の材料としては、例えば、ドープドポリシリコンや、タングステン等の金属材料を用いることができる。
次に、図4に示すマイクロトランス素子1、送信回路3、受信回路5を備えた送受信装置の回路図である図5を用いて、トランス素子の特性について説明する。
3 送信回路
5 受信回路
10、70 p型の半導体層
12 絶縁層
14 下部基板
16 コイル絶縁層
18 金属層コイル
20 絶縁層
31 送信回路の第1端子
32 送信回路の第2端子
51 受信回路の第1端子
52 受信回路の第2端子
101、701 半導体層コイル
102 トレンチ
103 トレンチ絶縁膜
104 導電層
105 金属化合物層
110、710 トレンチコイル
Claims (4)
- 第1導電型の半導体層を備えた半導体基板と、
前記第1導電型の半導体層の表面側に設けられた第2導電型の半導体層からなる半導体層コイルと、
前記半導体層コイルと並列に接続されており、前記半導体層コイルのコイル配線間の前記第1導電型の半導体層に形成されたトレンチと、前記トレンチ内面に設けられたトレンチ絶縁膜と、前記トレンチ絶縁膜によって被覆されている導電層を有するトレンチコイルと、
前記第1導電型の半導体層の表面側に設けられ、前記半導体層コイルおよび前記トレンチコイルを被覆するコイル絶縁層と、
前記コイル絶縁層の表面に設けられており、前記半導体層コイルおよび前記トレンチコイルと対向している金属層コイルとを備えた、トランス素子。 - 前記半導体層コイルと前記コイル絶縁層との間に、前記半導体層コイルと接する金属化合物層が形成されている、請求項1に記載のトランス素子。
- 前記金属化合物層はシリサイド層である、請求項2に記載のトランス素子。
- 請求項1に記載のトランス素子の製造方法であって、
第1導電型の半導体層にトレンチコイルを形成する第1工程と、
第1工程で形成したトレンチコイルの間の第1導電型の半導体層に対してイオン注入を行って半導体層コイルを形成する第2工程とを含む、トランス素子の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009269875A JP5482152B2 (ja) | 2009-11-27 | 2009-11-27 | トランス素子とその製造方法 |
US12/938,016 US8072307B2 (en) | 2009-11-27 | 2010-11-02 | Transformer |
Applications Claiming Priority (1)
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JP2009269875A JP5482152B2 (ja) | 2009-11-27 | 2009-11-27 | トランス素子とその製造方法 |
Publications (3)
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JP2011114203A JP2011114203A (ja) | 2011-06-09 |
JP2011114203A5 JP2011114203A5 (ja) | 2011-08-18 |
JP5482152B2 true JP5482152B2 (ja) | 2014-04-23 |
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JP2009269875A Active JP5482152B2 (ja) | 2009-11-27 | 2009-11-27 | トランス素子とその製造方法 |
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US (1) | US8072307B2 (ja) |
JP (1) | JP5482152B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8697574B2 (en) * | 2009-09-25 | 2014-04-15 | Infineon Technologies Ag | Through substrate features in semiconductor substrates |
EP2385534B1 (en) | 2010-05-05 | 2017-10-18 | Nxp B.V. | Integrated transformer |
US9551805B2 (en) * | 2011-10-13 | 2017-01-24 | Integrated Device Technology, Inc. | Apparatus, system, and method for detecting a foreign object in an inductive wireless power transfer system via coupling coefficient measurement |
US8539666B2 (en) | 2011-11-10 | 2013-09-24 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
CN105084291B (zh) * | 2014-04-22 | 2017-09-01 | 中芯国际集成电路制造(上海)有限公司 | 一种垂直型平面螺旋电感及其制备方法、电子装置 |
US11049639B2 (en) | 2017-02-13 | 2021-06-29 | Analog Devices, Inc. | Coupled coils with lower far field radiation and higher noise immunity |
US11393776B2 (en) * | 2018-05-17 | 2022-07-19 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US4416056A (en) * | 1977-12-13 | 1983-11-22 | Fujitsu Limited | Process for preparation of film coils |
JP3141562B2 (ja) * | 1992-05-27 | 2001-03-05 | 富士電機株式会社 | 薄膜トランス装置 |
JPH07183468A (ja) | 1993-12-22 | 1995-07-21 | Tokin Corp | 絶縁シリコン基板並びにそれを用いたインダクタおよび分布定数型フィルタ |
US7042325B2 (en) * | 2002-05-31 | 2006-05-09 | International Rectifier Corporation | Planar transformer arrangement |
US7091813B2 (en) * | 2002-06-13 | 2006-08-15 | International Business Machines Corporation | Integrated circuit transformer for radio frequency applications |
DE10232642B4 (de) * | 2002-07-18 | 2006-11-23 | Infineon Technologies Ag | Integrierte Transformatoranordnung |
JP4556422B2 (ja) * | 2003-12-02 | 2010-10-06 | パナソニック株式会社 | 電子部品およびその製造方法 |
US9019057B2 (en) * | 2006-08-28 | 2015-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolators and coil transducers |
JP4900019B2 (ja) * | 2007-04-19 | 2012-03-21 | 富士電機株式会社 | 絶縁トランスおよび電力変換装置 |
US7842580B2 (en) * | 2008-05-19 | 2010-11-30 | International Business Machines Corporation | Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications |
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2009
- 2009-11-27 JP JP2009269875A patent/JP5482152B2/ja active Active
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- 2010-11-02 US US12/938,016 patent/US8072307B2/en active Active
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US20110128108A1 (en) | 2011-06-02 |
US8072307B2 (en) | 2011-12-06 |
JP2011114203A (ja) | 2011-06-09 |
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