JP5476560B2 - 導電性ナノワイヤによる磁気スイッチング素子 - Google Patents
導電性ナノワイヤによる磁気スイッチング素子 Download PDFInfo
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- JP5476560B2 JP5476560B2 JP2008207298A JP2008207298A JP5476560B2 JP 5476560 B2 JP5476560 B2 JP 5476560B2 JP 2008207298 A JP2008207298 A JP 2008207298A JP 2008207298 A JP2008207298 A JP 2008207298A JP 5476560 B2 JP5476560 B2 JP 5476560B2
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- magnetic field
- nanowire
- conductive
- switching element
- conductive nanowire
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Description
本発明のスイッチング素子は,米国特許7351313号明細書,特開2007−991号公報,又は特開2007−5684号公報と同様の方法で導電性ナノワイヤを製造し,これに磁場を与える機構を取り付けることで製造できる。また,発明のスイッチング素子は,米国特許7351313号明細書と同様の方法で電子回路を製造し,これに磁場を与える機構を取り付けることで製造できる。
Claims (3)
- 2本の電極と,
前記2本の電極を接続する導電性ナノワイヤと,
前記導電性ナノワイヤに磁場を印加する磁場印加手段と,
前記磁場印加手段が前記導電性ナノワイヤに印加する磁場を制御する磁場制御手段と,
を具備し,
前記2本の電極のうち前記導電性ナノワイヤが設けられる部位間の間隔は,1nm以上100μm以下であり,
前記導電性ナノワイヤは,π電子系を有する有機化合物からなり,
前記π電子系を有する有機化合物は,テトラフェニルホスホニウム・ジシアノコバルト(III)フタロシアニン,又はテトラフェニルホスホニウム・ジシアノ鉄(III)フタロシアニンからなり,
前記磁場制御手段が,前記磁場印加手段が前記導電性ナノワイヤに印加する磁場を制御することで,前記導電性ナノワイヤの導電性を制御する,
スイッチング素子。 - 前記導電性ナノワイヤは,
幅が構成分子1個分以上1μm以下である,
請求項1に記載のスイッチング素子。 - 前記導電性ナノワイヤの両端に1Vの電圧を印加した際に流れる電流の量は,
前記導電性ナノワイヤに印加される磁場の強度が0Tの場合に比べると,前記導電性ナノワイヤに印加される磁場の強度が10Tの場合に,1/4以下となる,
請求項1に記載のスイッチング素子。
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JP2008207298A JP5476560B2 (ja) | 2008-08-11 | 2008-08-11 | 導電性ナノワイヤによる磁気スイッチング素子 |
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JP2008207298A JP5476560B2 (ja) | 2008-08-11 | 2008-08-11 | 導電性ナノワイヤによる磁気スイッチング素子 |
Publications (2)
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JP2010045124A JP2010045124A (ja) | 2010-02-25 |
JP5476560B2 true JP5476560B2 (ja) | 2014-04-23 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5527683B2 (ja) * | 2009-09-09 | 2014-06-18 | 独立行政法人科学技術振興機構 | 極小ワイヤー状分子集合体及びその製造方法 |
KR101176166B1 (ko) * | 2010-04-02 | 2012-08-22 | 서울시립대학교 산학협력단 | 그래핀과 자성체를 이용한 나노 트랜지스터 |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP1344219A2 (en) * | 2000-12-11 | 2003-09-17 | Branimir Simic-Glavaski | Molecular electro-optical switching or memory device, and method of making the same |
JP4691648B2 (ja) * | 2002-03-08 | 2011-06-01 | 独立行政法人情報通信研究機構 | 導電性ナノワイヤーの製造装置および製造方法 |
JP4853859B2 (ja) * | 2005-06-27 | 2012-01-11 | 独立行政法人情報通信研究機構 | 非導電性ナノワイヤー及びその製造方法 |
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