JP5474967B2 - ターゲットへ同時にrfおよびdc電力を用いる極めて均一なスパッタ堆積の方法 - Google Patents
ターゲットへ同時にrfおよびdc電力を用いる極めて均一なスパッタ堆積の方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 41
- 238000004544 sputter deposition Methods 0.000 title description 2
- 238000009826 distribution Methods 0.000 claims description 104
- 239000000463 material Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 20
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- 238000000427 thin-film deposition Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
a.(a)半径方向分布の中央部高位型不均一性または、(b)半径方向分布の縁部高位型不均一性の1つを、DC電力の電力レベルに対するRF電力の電力レベルを増加することによって補正するステップと、
b.(a)半径方向分布の中央部高位型不均一性または、(b)半径方向分布の縁部高位型不均一性の他方の1つを、RF電力の電力レベルに対するDC電力の電力レベルを増加することによって補正するステップと
の1つを行うステップをさらに含む。
Claims (19)
- チャンバ内のワークピース上にプラズマ促進物理蒸着を行う方法であって、
前記チャンバの天井付近に、前記ワークピース上に堆積されるべき材料または材料の前駆体を含むスパッタターゲットを用意するステップと、
前記ワークピースを、前記チャンバ内で前記スパッタターゲットと向かい合うように支持するステップと、
前記チャンバ内にキャリアガスを導入するステップと、
前記ターゲットの上に磁石を設けるステップと、
前記ターゲット付近にプラズマを発生させて、それに対応して前記ワークピース上に前記ターゲットからの材料の堆積を生じるように、RF電力およびDC電力を前記ターゲットに印加するステップであって、前記堆積が、前記ワークピース上への堆積厚さの半径方向分布を有するステップと、
(A)(a)前記半径方向分布の中央部高位型不均一性および、(b)前記半径方向分布の縁部高位型不均一性の一方を、前記DC電力の電力レベルに対する前記RF電力の電力レベルを増加することによって補正する第1の補正するステップ、あるいは
(B)(a)前記半径方向分布の中央部高位型不均一性および、(b)前記半径方向分布の縁部高位型不均一性の他方を、前記RF電力の電力レベルに対する前記DC電力の電力レベルを増加することによって補正する第2の補正するステップ
を行うステップと
を含む方法。 - 前記第1の補正するステップが、前記半径方向分布の中央部高位型不均一性を補正するステップを含み、
前記第2の補正するステップが、前記半径方向分布の縁部高位型不均一性を補正するステップを含む、
請求項1に記載の方法。 - 前記RF電力の電力レベルを増加することを、前記半径方向分布の前記中央部高位型不均一性が少なくともほぼ最小化されるまで実行する、請求項2に記載の方法。
- 前記DC電力の電力レベルを増加することを、前記半径方向分布の前記縁部高位型不均一性が少なくともほぼ最小化されるまで実行する、請求項2に記載の方法。
- 前記第1の補正するステップが、前記半径方向分布の縁部高位型不均一性を補正するステップを含み、
前記第2の補正するステップが、前記半径方向分布の中央部高位型不均一性を補正するステップを含む、
請求項1に記載の方法。 - 前記RF電力の電力レベルを増加することを、前記半径方向分布の前記縁部高位型不均一性が少なくともほぼ最小化されるまで実行する、請求項5に記載の方法。
- 前記DC電力の電力レベルを増加することを、前記半径方向分布の前記中央部高位型不均一性が少なくともほぼ最小化されるまで実行する、請求項5に記載の方法。
- 前記磁石と前記ターゲットとの間の距離を調整することによって前記半径方向分布を調節するステップをさらに含む、請求項1に記載の方法。
- 前記調整することが、前記磁石と前記ターゲットとの間の距離を減少することによって前記半径方向分布の中央部高位型不均一性を減少するステップを含む、請求項8に記載の方法。
- 前記調整することが、前記磁石と前記ターゲットとの間の距離を増加することによって前記半径方向分布の縁部高位型不均一性を減少するステップを含む、請求項8に記載の方法。
- 前記磁石が前記チャンバの外側で前記天井の上に配置され、前記調整することが前記天井に対して前記磁石を上昇および下降させるステップを含む、請求項8に記載の方法。
- 前記調整することが、対称軸に対して浅い曲線を有する前記磁石の力線内の前記ターゲットの浸入を増加することによって前記半径方向分布の中央部高位型不均一性を低減するステップを含む、請求項8に記載の方法。
- 前記調整することが、対称軸に対して急峻な曲線を有する前記磁石の力線内の前記ターゲットの浸入を増加することによって前記半径方向分布の縁部高位型不均一性を低減するステップを含む、請求項8に記載の方法。
- 軌道半径によって規定される軌道運動にて、前記ターゲットの上にあり全体的に前記ワークピースと平行な平面内で前記磁石を連続的に回転するステップをさらに含む、請求項1に記載の方法。
- 前記磁石の前記軌道運動の前記軌道半径を増加することによって前記半径方向分布の中央部高位型不均一性を低減するステップをさらに含む、請求項14に記載の方法。
- 前記ターゲットの前記軌道運動の前記軌道半径を減少することによって前記半径方向分布の縁部高位型不均一性を低減するステップをさらに含む、請求項14に記載の方法。
- 前記ターゲットを、(a)前記ワークピースと平行でかつ前記ワークピースと向かい合う中央面と、(b)前記中央面と交差して前記中央面を取り囲むエッジ面とを備える中実な要素として用意するステップをさらに含み、さらに、前記エッジ面を前記中央面に対して90°未満の角度に方向付けることによって前記半径方向分布の中央部高位型不均一性を低減するステップを含み、前記エッジ面が半径方向に沿って外側に向く、請求項1に記載の方法。
- 前記方向付けることが、前記エッジ面を3°〜70°に方向付けるステップを含む、請求項17に記載の方法。
- 前記印加するステップが、前記ターゲットに前記RF電力および前記DC電力を、
(a)同時に、または
(b)交互シーケンスで
印加するステップを含む、請求項1に記載の方法。
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US12/188,937 US8992741B2 (en) | 2008-08-08 | 2008-08-08 | Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target |
US12/188,937 | 2008-08-08 | ||
PCT/US2009/052781 WO2010017259A2 (en) | 2008-08-08 | 2009-08-05 | Method for ultra-uniform sputter deposition using simultaneous rf and dc power on target |
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JP5474967B2 true JP5474967B2 (ja) | 2014-04-16 |
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JP (1) | JP5474967B2 (ja) |
KR (1) | KR101629396B1 (ja) |
CN (1) | CN102113091B (ja) |
TW (1) | TWI467041B (ja) |
WO (1) | WO2010017259A2 (ja) |
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US7820020B2 (en) * | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
CN100524623C (zh) | 2006-09-26 | 2009-08-05 | 中国科学院上海硅酸盐研究所 | 电磁场约束电感耦合溅射制备ZnO基稀磁半导体薄膜的方法 |
US8557094B2 (en) * | 2006-10-05 | 2013-10-15 | Applied Materials, Inc. | Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
JP5178832B2 (ja) * | 2007-07-25 | 2013-04-10 | ジーエス ナノテク カンパニー リミテッド | 非電導性ターゲットを使用するスパッタリングによるセラミック薄膜の成膜方法 |
JP2009187682A (ja) * | 2008-02-01 | 2009-08-20 | Ulvac Japan Ltd | カソード電極の製造方法及び薄膜固体リチウムイオン2次電池の製造方法 |
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US8992741B2 (en) | 2015-03-31 |
CN102113091B (zh) | 2013-06-12 |
KR101629396B1 (ko) | 2016-06-13 |
WO2010017259A2 (en) | 2010-02-11 |
CN102113091A (zh) | 2011-06-29 |
TWI467041B (zh) | 2015-01-01 |
US20100032289A1 (en) | 2010-02-11 |
WO2010017259A3 (en) | 2010-04-22 |
KR20110046519A (ko) | 2011-05-04 |
TW201009103A (en) | 2010-03-01 |
JP2011530654A (ja) | 2011-12-22 |
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