JP5465247B2 - マイクロリソグラフィ投影露光装置における偏光分布を修正する方法及びマイクロリソグラフィ投影露光装置 - Google Patents

マイクロリソグラフィ投影露光装置における偏光分布を修正する方法及びマイクロリソグラフィ投影露光装置 Download PDF

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JP5465247B2
JP5465247B2 JP2011519048A JP2011519048A JP5465247B2 JP 5465247 B2 JP5465247 B2 JP 5465247B2 JP 2011519048 A JP2011519048 A JP 2011519048A JP 2011519048 A JP2011519048 A JP 2011519048A JP 5465247 B2 JP5465247 B2 JP 5465247B2
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exposure apparatus
plate
projection exposure
polarization
ips
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JP2011528856A (ja
JP2011528856A5 (enExample
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ダミアン フィオルカ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Polarising Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011519048A 2008-07-22 2009-06-17 マイクロリソグラフィ投影露光装置における偏光分布を修正する方法及びマイクロリソグラフィ投影露光装置 Expired - Fee Related JP5465247B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8263408P 2008-07-22 2008-07-22
US61/082,634 2008-07-22
DE102008040611.2 2008-07-22
DE102008040611A DE102008040611A1 (de) 2008-07-22 2008-07-22 Verfahren zum Modifizieren einer Polarisationsverteilung in einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographische Projektionsbelichtungsanlage
PCT/EP2009/004372 WO2010009788A1 (en) 2008-07-22 2009-06-17 Method for modifying a polarization distribution in a microlithographic projection exposure apparatus, and microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
JP2011528856A JP2011528856A (ja) 2011-11-24
JP2011528856A5 JP2011528856A5 (enExample) 2012-07-12
JP5465247B2 true JP5465247B2 (ja) 2014-04-09

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JP2011519048A Expired - Fee Related JP5465247B2 (ja) 2008-07-22 2009-06-17 マイクロリソグラフィ投影露光装置における偏光分布を修正する方法及びマイクロリソグラフィ投影露光装置

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US (1) US9128389B2 (enExample)
JP (1) JP5465247B2 (enExample)
DE (1) DE102008040611A1 (enExample)
WO (1) WO2010009788A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
JP6120001B2 (ja) * 2011-10-24 2017-04-26 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
DE102012203944A1 (de) * 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08313842A (ja) * 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
JP2005005521A (ja) * 2003-06-12 2005-01-06 Nikon Corp 露光装置、露光方法、および偏光状態測定装置
JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
TWI423301B (zh) 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US8675176B2 (en) * 2005-02-25 2014-03-18 Asml Netherlands B.V. Parameter control in a lithographic apparatus using polarization
US8206116B2 (en) 2005-07-14 2012-06-26 United Technologies Corporation Method for loading and locking tangential rotor blades and blade design
KR101459157B1 (ko) 2005-10-04 2014-11-07 칼 짜이스 에스엠티 게엠베하 광학 시스템 내의, 특히 마이크로리소그래피용 투영 노광 장치 내의 편광 분포에 영향을 주기 위한 장치 및 방법
JP2007180088A (ja) * 2005-12-27 2007-07-12 Nikon Corp 照明光学装置、照明光学装置の調整方法、露光装置、およびデバイスの製造方法
JP2007220767A (ja) * 2006-02-15 2007-08-30 Canon Inc 露光装置及びデバイス製造方法
US7525642B2 (en) * 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008066565A (ja) * 2006-09-08 2008-03-21 Sony Corp 露光方法および露光装置

Also Published As

Publication number Publication date
US9128389B2 (en) 2015-09-08
JP2011528856A (ja) 2011-11-24
DE102008040611A1 (de) 2010-01-28
US20110122382A1 (en) 2011-05-26
WO2010009788A1 (en) 2010-01-28

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