JP5463352B2 - 発色調節されたサファイアの製造方法 - Google Patents

発色調節されたサファイアの製造方法 Download PDF

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Publication number
JP5463352B2
JP5463352B2 JP2011513401A JP2011513401A JP5463352B2 JP 5463352 B2 JP5463352 B2 JP 5463352B2 JP 2011513401 A JP2011513401 A JP 2011513401A JP 2011513401 A JP2011513401 A JP 2011513401A JP 5463352 B2 JP5463352 B2 JP 5463352B2
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Japan
Prior art keywords
sapphire
ions
color
implanted
cobalt
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JP2011513401A
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English (en)
Japanese (ja)
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JP2011524326A5 (enExample
JP2011524326A (ja
Inventor
パク，ジェ−ウォン
アン，ジュ−ヒョン
キム，ヨン−チョル
ハン，ジャン−ミン
キム，ジュンヨン
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Korea Atomic Energy Research Institute KAERI
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Korea Atomic Energy Research Institute KAERI
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Adornments (AREA)
JP2011513401A 2008-06-12 2008-06-12 発色調節されたサファイアの製造方法 Active JP5463352B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2008/003268 WO2009151160A1 (en) 2008-06-12 2008-06-12 Method for manufacturing the color controlled sappire

Publications (3)

Publication Number Publication Date
JP2011524326A JP2011524326A (ja) 2011-09-01
JP2011524326A5 JP2011524326A5 (enExample) 2013-11-28
JP5463352B2 true JP5463352B2 (ja) 2014-04-09

Family

ID=41416852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011513401A Active JP5463352B2 (ja) 2008-06-12 2008-06-12 発色調節されたサファイアの製造方法

Country Status (4)

Country Link
US (1) US8778463B2 (enExample)
JP (1) JP5463352B2 (enExample)
CN (1) CN102066624B (enExample)
WO (1) WO2009151160A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9718249B2 (en) * 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
US9377912B2 (en) * 2012-12-11 2016-06-28 Gtat Corporation Mobile electronic device comprising a modified sapphire
US9092187B2 (en) 2013-01-08 2015-07-28 Apple Inc. Ion implant indicia for cover glass or display component
US9623628B2 (en) 2013-01-10 2017-04-18 Apple Inc. Sapphire component with residual compressive stress
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
WO2014126551A1 (en) * 2013-02-12 2014-08-21 Apple Inc. Multi-step ion implantation
US9416442B2 (en) 2013-03-02 2016-08-16 Apple Inc. Sapphire property modification through ion implantation
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
JP6878009B2 (ja) * 2014-05-23 2021-05-26 ケルテック 防眩サファイア材料を製造するための一価及び／又は多価ガスイオンビーム処理方法
FR3027120B1 (fr) * 2014-10-09 2016-12-23 Quertech Dalle tactile capacitive a haute transmission dans le domaine visible et inrayable
CN105039922B (zh) * 2015-06-17 2018-01-30 蓝思科技（长沙）有限公司 一种带颜色的蓝宝石基材及其制备方法
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material
CN105671635A (zh) * 2016-02-02 2016-06-15 同济大学 一种可吸收蓝光的蓝宝石晶体及其应用
EP3450594B1 (en) * 2016-04-25 2020-07-22 Shinkosha Co., Ltd. Blue-colored aluminum oxide single crystal and method for producing aluminum oxide single crystal
CN106222754A (zh) * 2016-07-29 2016-12-14 成都立威讯科技有限公司 一种工艺精湛的蓝宝石分离方法
CN106637417B (zh) * 2016-10-20 2018-09-28 河北工业大学 一种人工蓝宝石晶体的改色方法
FR3062658B1 (fr) * 2017-02-03 2022-06-24 Sa Quertech Procede de traitement antireflectif et resistant a la rayure dans un saphir synthetique
EP3696151A1 (fr) * 2019-02-18 2020-08-19 Rolex Sa Glace de montre colorée
CN113811107B (zh) * 2020-06-11 2023-05-26 维达力科技股份有限公司 壳体的制备方法、壳体以及电子产品
WO2025226825A1 (en) * 2024-04-23 2025-10-30 The Board Of Trustees Of The Leland Stanford Junior University Wafer-scale thin-film titanium:sapphire photonics

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Publication number Priority date Publication date Assignee Title
JPS5827663B2 (ja) * 1979-06-04 1983-06-10 富士通株式会社 半導体装置の製造方法
JPS6287492A (ja) 1985-10-11 1987-04-21 Seiko Epson Corp スタ−・サフアイア人工結晶の合成方法
CH664665GA3 (enExample) * 1986-06-19 1988-03-31
JPS6325602A (ja) * 1986-07-18 1988-02-03 Sony Corp カラ−固体撮像素子用色フイルタ
JPH05225924A (ja) * 1992-02-10 1993-09-03 Ishikawajima Harima Heavy Ind Co Ltd イオンビーム発生装置
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
JPH09106958A (ja) * 1995-06-23 1997-04-22 De Beers Ind Diamond Div Ltd 結晶基体のドーピング
JPH10204635A (ja) * 1997-01-14 1998-08-04 Kobe Steel Ltd イオンビーム発生装置
US5885665A (en) * 1997-05-09 1999-03-23 The United States Of America As Represented By The United States Department Of Energy VO2 precipitates for self-protected optical surfaces
KR100644929B1 (ko) * 2004-03-04 2006-11-13 한국원자력연구소 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법
KR100699048B1 (ko) 2004-12-10 2007-03-23 서울시립대학교 산학협력단 블루 사파이어의 열처리방법
KR100856109B1 (ko) 2007-04-05 2008-09-02 한국원자력연구원 발색조절된 사파이어 제조방법
JP2009216452A (ja) * 2008-03-07 2009-09-24 Seiko Epson Corp 透光性部材、時計、および透光性部材の製造方法

Also Published As

Publication number Publication date
WO2009151160A1 (en) 2009-12-17
US20110200760A1 (en) 2011-08-18
CN102066624B (zh) 2013-03-13
US8778463B2 (en) 2014-07-15
JP2011524326A (ja) 2011-09-01
CN102066624A (zh) 2011-05-18

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