JP5456161B2 - 基板の直列式処理のためのプロセスモジュール - Google Patents
基板の直列式処理のためのプロセスモジュール Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Physical Vapour Deposition (AREA)
Description
−処理流体による基板の片面又は両面処理
−超音波及び/又はメガサウンド(megasound)による基板の片面又は両面処理。
2 処理チャンバ
3 入口、入口開口
5 処理平面
6A 下側流体クッション
6B 上側流体クッション
7A 下側処理面
7B 上側処理面
8 メガソニック装置
9 制御された送りのための装置、送り装置
9A 複数の部分から成る構成の送り装置の前側部分
9B 複数の部分から成る構成の送り装置の後側部分
9C キネマティックス
10 キャッチ
10A 前側のキャッチ
10B 後側のキャッチ
10′ 第1のキャッチ対
10′′ 後続のキャッチ対
11 接触面
12 駆動エレメント
13 駆動チャンバ
14 媒体分離器
15 分離器ギャップ
16 貫通スロット
17 ガスノズル、ノズル
18 集水タンク
19 箔
20A/B 第1/第2の体積
21 送り方向、搬送方向
22 基板
23 矢印
24 矢印
VV 送り速度
VF 流速
h 保持方向
Claims (13)
- 平坦な基板(22)の流体直列式処理及び搬送のための装置において、少なくとも1つのプロセスモジュール(1)が設けられており、該プロセスモジュールが、少なくとも1つの処理面(7A)を備える処理チャンバ(2)を有しており、前記処理面(7A)が、処理平面(5A)において実質的に水平に配置されており、且つ処理面(7A)に接触することなく基板(22)を支持するために提供される下側流体クッション(6A)を形成するように設計されており、
送り方向(21)での前記基板(22)の制御された送りのための少なくとも1つの送り装置(9)が設けられており、該送り装置(9)が第1の部分(9A)及び別の部分(9B)を有しており、第1の部分及び別の部分は、別個に制御することができ、且つ送り方向で、基板の後側領域又は前側領域に配置された基板のエッジに同時に接触することができるように互いに間隔を置いて配置されており、これにより、前記送り装置(9)の前記第1の部分(9A)から前記別の部分(9B)への基板(22)の引渡しを可能にしていることを特徴とする、平坦な基板(22)の流体直列式処理及び搬送のための装置。 - 送り速度(VV)の保持方向(h)における成分が流体クッションの流速(VF)の保持方向(h)における成分よりも大きな値となるように前記送り速度(VV)を調節するための手段が設けられており、前記保持方向(h)は、基板(22)の平面における送り装置の少なくとも1つのキャッチ(10)と基板のエッジとの1つのそれぞれの接触部から基板(22)の重心に向かう複数のベクトルの合成を表すベクトルの方向として定義される、請求項1記載の装置。
- 処理面(7A)の上方に該処理面(7A)に対して平行に配置されており且つ上側流体クッション(6B)を形成するように設計された別の面(7B)が設けられている、請求項1又は2記載の装置。
- 上を向いた基板の側に第2の流体を供給するための装置が設けられている、請求項1から3までのいずれか1項記載の装置。
- 送り装置(9)のそれぞれの部分(9A,9B)が、基板(22)のエッジに接触するための少なくとも1つのキャッチ(10,10A,10B)を有する、請求項1から4までのいずれか1項記載の装置。
- 前記少なくとも1つのキャッチ(10,10A,10B)が、棒状に、ボール形若しくは球のセグメント形の接触領域(11)を有するように設計されており且つ運動機構(9C)に配置されており、該運動機構(9C)によって、基板エッジに対する接触領域(11)の位置決めを、処理及び搬送中のあらゆる時に確実に調節及び維持することができる、請求項5記載の装置。
- 請求項1から6までのいずれか1項記載の装置を使用することによって平坦な基板(22)の流体直列式処理及び搬送を行う方法において、
基板(22)の下を向いた面が処理面(7A)に機械的に接触することなく流体クッション(6A)の流体層によって支持されるまで、処理面(7A)に下側流体クッション(6A)を形成し、
送り装置の第1の部分(9A)によって基板(22)のエッジに接触し、
基板(22)を処理面(7A)に機械的に接触させることなく前記基板(22)を送り装置の第1の部分(9A)によって送り方向(21)へ送り、
第1の部分(9A)及び別の部分(9B)の両方が一時的に基板のエッジに接触するように該基板(22)のエッジを前記別の部分(9B)と接触させることによって、前記基板(22)を送り装置の第1の部分(9A)から別の部分(9B)へ引き渡し、
前記基板(22)を処理面(7A)に機械的に接触させることなく前記基板(22)を送り装置の前記別の部分(9B)によって送り方向(21)へ送ることを特徴とする、請求項1から6までのいずれか1項記載の装置を使用することによって平坦な基板(22)の流体直列式処理及び搬送を行う方法。 - 送り速度(VV)の保持方向(h)における成分が流体クッション(6A,6B)の流速(VF)の保持方向(h)における成分よりも大きな値となり、保持方向が、基板の平面における送り装置の少なくとも1つのキャッチ(10)と基板(22)のエッジとの1つのそれぞれの接触部から前記基板(22)の重心に向かうベクトルの合成を表すベクトルの方向として定義される、請求項7記載の方法。
- 前記第1の部分(9A)又は第2の部分(9B)が、基板(22)の後側の領域に位置するエッジに接触し、流体クッション(6A,6B)の流速(VF)と、送り速度(VV)とが、保持方向(h)で正の成分を有しており、送り速度(VV)の成分が、流体クッション(6A,6B)の流速(VF)の成分を超過するように調節される、請求項8記載の方法。
- 前記第1の部分(9A)又は第2の部分(9B)が、基板(22)の後側の領域に位置するエッジに接触し、流体クッション(6A,6B)の流速(VF)が、保持方向(h)で負の成分を有しており、送り速度(VV)が、保持方向(h)で正の成分を有している、請求項8記載の方法。
- 前記第1の部分(9A)又は第2の部分(9B)が、基板(22)の前側の領域に位置するエッジに接触し、流体クッション(6A,6B)の流速(VF)と、送り速度(VV)とが、保持方向(h)で負の成分を有しており、流体クッション(6A,6B)の流速(VF)の成分が、該成分の大きさが保持方向(h)での送り速度(VV)の成分の大きさを超過するように調節される、請求項8記載の方法。
- 送り装置(9)の別の部分(9B)が、第1の基板(22)を処理チャンバ(2)から送り出し、送り装置(9)の第1の部分(9A)が、第2の基板(22)を処理チャンバ(2)へ導入する、請求項7から11までのいずれか1項記載の方法。
- 基板(22)の最も幅広の部分が後に続く基板(22)のテーパ部が、少なくとも僅かに後続のプロセスモジュール(1)の内部に位置するまで、基板(22)がプロセスモジュール(1)から送り出される、請求項7から12までのいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009029945A DE102009029945A1 (de) | 2009-06-19 | 2009-06-19 | Prozessmodul zur Inline-Behandlung von Substraten |
DE102009029945.9 | 2009-06-19 | ||
PCT/EP2010/003543 WO2010145787A1 (en) | 2009-06-19 | 2010-06-14 | Process module for the inline-treatment of substrates |
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Publication Number | Publication Date |
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JP2012530363A JP2012530363A (ja) | 2012-11-29 |
JP5456161B2 true JP5456161B2 (ja) | 2014-03-26 |
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JP2012515380A Active JP5456161B2 (ja) | 2009-06-19 | 2010-06-14 | 基板の直列式処理のためのプロセスモジュール |
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Country | Link |
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US (1) | US20120248068A1 (ja) |
EP (1) | EP2443649A1 (ja) |
JP (1) | JP5456161B2 (ja) |
KR (1) | KR101414969B1 (ja) |
CN (1) | CN102804331A (ja) |
DE (1) | DE102009029945A1 (ja) |
SG (1) | SG176899A1 (ja) |
TW (1) | TWI494978B (ja) |
WO (1) | WO2010145787A1 (ja) |
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KR102325630B1 (ko) * | 2014-12-17 | 2021-11-12 | 주식회사 케이씨텍 | 화학 기계적 연마 공정이 완료된 웨이퍼의 세정 장치 |
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NL8402410A (nl) * | 1984-08-01 | 1986-03-03 | Bok Edward | Verbeterde proces installatie met double-floating transport en processing van wafers en tape. |
JPS6436041A (en) * | 1987-07-31 | 1989-02-07 | Nec Corp | Noncontact wafer transfer mechanism |
JPH02130849A (ja) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | 搬送装置 |
DE4039313A1 (de) * | 1990-12-04 | 1992-08-20 | Hamatech Halbleiter Maschinenb | Transportvorrichtung fuer substrate |
EP0650455B1 (en) | 1992-07-15 | 1996-09-18 | Minnesota Mining And Manufacturing Company | Fluid transport system for transporting articles |
JPH08503680A (ja) | 1992-07-15 | 1996-04-23 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | 物品取扱いシステム |
JP3404871B2 (ja) * | 1994-03-18 | 2003-05-12 | 東レ株式会社 | カラーフィルタ製造方法およびtft回路製造方法 |
US6336775B1 (en) * | 1998-08-20 | 2002-01-08 | Matsushita Electric Industrial Co., Ltd. | Gas floating apparatus, gas floating-transporting apparatus, and thermal treatment apparatus |
DE19934300C2 (de) | 1999-07-21 | 2002-02-07 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten |
DE19934301A1 (de) | 1999-07-21 | 2001-02-01 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zum Transportieren eines Halbleiterwafers durch einen Behandlungsbehälter |
JP2001170583A (ja) * | 1999-12-15 | 2001-06-26 | Kanegafuchi Chem Ind Co Ltd | 超音波洗浄装置及び超音波洗浄方法 |
TWI226303B (en) * | 2002-04-18 | 2005-01-11 | Olympus Corp | Substrate carrying device |
JP4305918B2 (ja) * | 2004-01-30 | 2009-07-29 | 東京エレクトロン株式会社 | 浮上式基板搬送処理装置 |
KR20070006768A (ko) * | 2004-03-17 | 2007-01-11 | 코레플로우 사이언티픽 솔루션스 리미티드 | 비접촉 열 플랫폼 |
JP4780984B2 (ja) * | 2005-03-18 | 2011-09-28 | オリンパス株式会社 | 基板搬送装置 |
EP1892054B1 (en) * | 2005-06-17 | 2014-07-23 | Nakata Manufacturing Co., Ltd. | Device for controlling welding angle |
JP5076697B2 (ja) | 2007-07-17 | 2012-11-21 | 株式会社Ihi | 薄板移送装置、薄板処理移送システム、及び薄板移送方法 |
-
2009
- 2009-06-19 DE DE102009029945A patent/DE102009029945A1/de not_active Withdrawn
-
2010
- 2010-06-14 JP JP2012515380A patent/JP5456161B2/ja active Active
- 2010-06-14 CN CN2010800271681A patent/CN102804331A/zh active Pending
- 2010-06-14 SG SG2011093614A patent/SG176899A1/en unknown
- 2010-06-14 US US13/378,357 patent/US20120248068A1/en not_active Abandoned
- 2010-06-14 WO PCT/EP2010/003543 patent/WO2010145787A1/en active Application Filing
- 2010-06-14 KR KR1020117030242A patent/KR101414969B1/ko active IP Right Grant
- 2010-06-14 EP EP10726433A patent/EP2443649A1/en not_active Withdrawn
- 2010-06-18 TW TW099119975A patent/TWI494978B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI494978B (zh) | 2015-08-01 |
EP2443649A1 (en) | 2012-04-25 |
TW201128692A (en) | 2011-08-16 |
DE102009029945A1 (de) | 2010-12-23 |
KR20120025530A (ko) | 2012-03-15 |
WO2010145787A1 (en) | 2010-12-23 |
CN102804331A (zh) | 2012-11-28 |
JP2012530363A (ja) | 2012-11-29 |
SG176899A1 (en) | 2012-01-30 |
US20120248068A1 (en) | 2012-10-04 |
KR101414969B1 (ko) | 2014-07-02 |
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