JP5455143B2 - マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 - Google Patents
マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 Download PDFInfo
- Publication number
- JP5455143B2 JP5455143B2 JP2007341519A JP2007341519A JP5455143B2 JP 5455143 B2 JP5455143 B2 JP 5455143B2 JP 2007341519 A JP2007341519 A JP 2007341519A JP 2007341519 A JP2007341519 A JP 2007341519A JP 5455143 B2 JP5455143 B2 JP 5455143B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask blank
- polishing
- manufacturing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 241
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 238000005498 polishing Methods 0.000 claims description 155
- 239000007788 liquid Substances 0.000 claims description 90
- 239000011521 glass Substances 0.000 claims description 82
- 239000006061 abrasive grain Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000006096 absorbing agent Substances 0.000 claims description 34
- 239000008119 colloidal silica Substances 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- 150000007524 organic acids Chemical class 0.000 claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 125000000129 anionic group Chemical group 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 106
- 230000007547 defect Effects 0.000 description 72
- 230000003746 surface roughness Effects 0.000 description 25
- 238000012546 transfer Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 19
- 230000002378 acidificating effect Effects 0.000 description 17
- 238000007517 polishing process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007341519A JP5455143B2 (ja) | 2007-12-29 | 2007-12-29 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007341519A JP5455143B2 (ja) | 2007-12-29 | 2007-12-29 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009160681A JP2009160681A (ja) | 2009-07-23 |
| JP2009160681A5 JP2009160681A5 (enExample) | 2011-01-27 |
| JP5455143B2 true JP5455143B2 (ja) | 2014-03-26 |
Family
ID=40963874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007341519A Active JP5455143B2 (ja) | 2007-12-29 | 2007-12-29 | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5455143B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI594069B (zh) * | 2011-09-21 | 2017-08-01 | Hoya Corp | Method of manufacturing a transfer mask |
| JP5942773B2 (ja) * | 2012-10-19 | 2016-06-29 | 旭硝子株式会社 | ガラス基板の研磨方法 |
| JP2013214095A (ja) * | 2013-07-03 | 2013-10-17 | Hoya Corp | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
| JP2015147713A (ja) * | 2014-02-07 | 2015-08-20 | 旭硝子株式会社 | フォトマスク用ガラス基板の洗浄方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4414292B2 (ja) * | 2004-06-29 | 2010-02-10 | 花王株式会社 | 研磨速度向上方法 |
| JP5090633B2 (ja) * | 2004-06-22 | 2012-12-05 | 旭硝子株式会社 | ガラス基板の研磨方法 |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| JP2007054944A (ja) * | 2005-07-25 | 2007-03-08 | Hoya Corp | マスクブランク用基板の製造方法、マスクブランクの製造方法及びマスクの製造方法 |
| JP2007299942A (ja) * | 2006-04-28 | 2007-11-15 | Fujifilm Corp | 金属研磨用組成物及びそれを用いた化学的機械的研磨方法 |
| JP2007301721A (ja) * | 2007-08-29 | 2007-11-22 | Kao Corp | 研磨液組成物 |
-
2007
- 2007-12-29 JP JP2007341519A patent/JP5455143B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009160681A (ja) | 2009-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5317092B2 (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 | |
| US10620527B2 (en) | Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method | |
| US10295900B2 (en) | Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method | |
| JP6002528B2 (ja) | マスクブランク用ガラス基板の製造方法、マスクブランクの製造方法及びマスクの製造方法、並びにインプリントモールドの製造方法 | |
| KR102107799B1 (ko) | 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법 | |
| JP7662511B2 (ja) | マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 | |
| JP2019086802A (ja) | 反射型マスクブランク及び反射型マスク | |
| JP2017181731A (ja) | マスクブランク用基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 | |
| JP5455143B2 (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 | |
| JP2013214095A (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 | |
| JP5306644B2 (ja) | マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 | |
| JP2018054960A (ja) | マスクブランク用基板、多層反射膜付き基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法 | |
| JP2016122751A (ja) | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法 | |
| JP6297321B2 (ja) | 機能膜付き基板の製造方法、多層膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 | |
| JP2008116571A (ja) | マスクブランク用基板の製造方法及びマスクブランクの製造方法、並びに転写マスクの製造方法 | |
| JP2014109670A (ja) | リソグラフィー用部材の製造方法、反射型マスクブランクの製造方法、マスクブランクの製造方法、反射型マスクの製造方法、マスクの製造方法、及び洗浄装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101201 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101201 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120925 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120928 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130215 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130813 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131014 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131228 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5455143 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |