JP5452731B2 - プラズマ浸漬イオンを用いた加工装置及び方法 - Google Patents
プラズマ浸漬イオンを用いた加工装置及び方法 Download PDFInfo
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- JP5452731B2 JP5452731B2 JP2012541004A JP2012541004A JP5452731B2 JP 5452731 B2 JP5452731 B2 JP 5452731B2 JP 2012541004 A JP2012541004 A JP 2012541004A JP 2012541004 A JP2012541004 A JP 2012541004A JP 5452731 B2 JP5452731 B2 JP 5452731B2
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- 150000002500 ions Chemical class 0.000 title claims description 79
- 238000012545 processing Methods 0.000 title claims description 51
- 238000007654 immersion Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 34
- 230000008569 process Effects 0.000 claims description 24
- 238000000605 extraction Methods 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000003252 repetitive effect Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 19
- 238000010884 ion-beam technique Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000306 component Substances 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000011949 advanced processing technology Methods 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
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- 239000000615 nonconductor Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Electron Sources, Ion Sources (AREA)
Description
11 加工物
12 受け台
13 回転装置
14 スロット
15 蓋
16 電源供給源
17 ポンプ
18 ガスシャワー
Claims (13)
- 電気的に絶縁され、プラズマが満たされる真空チャンバ10と、
加工物11が載置される部分であって、真空チャンバ10の内部に設置されて回転可能な受け台12及び回転装置13と、
少なくとも1面以上に、加工物の表面に沿って配置されるスロット14が設けられ、伝導性をもって加工物11を囲んで加工物11をプラズマから分離させ、電気的に加工物11に接続する蓋15と、
前記加工物11と蓋15に電源を供給する電源供給源16と、
を含み、
前記加工物と蓋にプラズマ電位に比して相対的に負の値を有するバイアスが提供され、前記蓋はスロットを有する抽出電極の役割をし、前記抽出電極により蓋の周辺に形成されたシース内部で加速されたイオンが蓋と加工物との間の間隔の内部に引っ張られ、回転する加工物に衝突して加工物の表面を研磨することを特徴とするプラズマ浸漬イオンを用いた加工装置。 - 前記加工物11は、円筒形加工物または平板型加工物であることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記加工物11は、蓋15に対して相対的に一定の角度傾いていることを特徴とする請求項1または2に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記蓋15のスロット14は、衝突するイオンが加工物の表面をかすめるように入射させるために、四角断面の蓋の場合は4つの面にそれぞれ2つずつ設けられることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記蓋15は四角断面の蓋であり、抽出電極の役割をするスロット14は四角断面の各面に設けられることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記蓋15は、互いに所定のギャップを維持する内側のインナー蓋15aと外側のアウター蓋15bで構成され、内側の伝導性インナー蓋15aは加工物11に接続し、アウター蓋15bはフローティングまたは接地されることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記バイアスは、RF磁気バイアス、単極繰り返しパルスバイアス、双極繰り返しパルスバイアスのうち何れか1つであることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記プラズマは、内部アンテナを有するICPソース、不活性ガス、反応性ガスのうち何れか1つにより製造されることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 前記受け台12及び回転装置13と蓋15は2セットが設けられ、1つの真空チャンバ10内に並んで配置されることを特徴とする請求項1に記載のプラズマ浸漬イオンを用いた加工装置。
- 電気的に絶縁され、プラズマが満たされる真空チャンバ10と、
加工物11が載置される部分であって、真空チャンバ10の内部に設置される受け台12と、
少なくとも1面以上に、加工物の表面に沿って配置されるスロット14が設けられ、伝導性をもって加工物11を囲んで加工物11をプラズマから分離させ、電気的に加工物11に接続すると共に回転可能な蓋15及びこの蓋15の回転のための回転装置13と、
前記加工物11と蓋15に電源を供給する電源供給源16と、
を含み、
前記加工物と蓋にプラズマ電位に比して相対的に負の値を有するバイアスが提供され、前記蓋はスロットを有する抽出電極の役割をして回転し、前記抽出電極により蓋の周辺に形成されたシース内部で加速されたイオンが蓋と加工物との間の間隔の内部に引っ張られ、その内部の加工物に衝突することにより、加工物の表面を研磨することを特徴とするプラズマ浸漬イオンを用いた加工装置。 - 電気的に絶縁されたチャンバ内部に加工物を配置するが、チャンバに電気的に絶縁され、回転が可能な受け台上に配置する段階と、
加工物に電気的に接続し、スロットによりイオン抽出電極の役割をする蓋で加工物の周辺を覆う段階と、
前記チャンバ内部にプラズマを提供する段階と、
前記加工物と蓋に負のバイアスを付加し、前記加工物を回転させる段階と、
前記抽出電極により蓋の周辺に形成されたシース内部で加速されたイオンが蓋と加工物との間の間隔の内部に引っ張られ、その内部の加工物に衝突することにより、加工物の表面を加工する段階と、
を含むことを特徴とするプラズマ浸漬イオンを用いた加工方法。 - 前記蓋15は、互いに所定のギャップを維持する内側のインナー蓋15aと外側のアウター蓋15bで構成され、内側の伝導性インナー蓋15aは加工物11に接続し、アウター蓋15bはフローティングまたは接地される形態のものを使用することを特徴とする請求項11に記載のプラズマ浸漬イオンを用いた加工方法。
- 前記加工物の表面を加工する段階は、表面洗浄、表面活性化、マイクロナノ及びナノパターン構造の乾式エッチング、薄膜蒸着、イオン化蒸着、繰り返しエッチング、イオンの注入によるプラズマ工程、表面研磨から選択された何れか1つの加工を含むことを特徴とする請求項11に記載のプラズマ浸漬イオンを用いた加工方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0113633 | 2009-11-24 | ||
KR1020090113633A KR101048057B1 (ko) | 2009-11-24 | 2009-11-24 | 플라즈마 잠입 이온을 이용한 가공 장치 및 방법 |
PCT/KR2010/007418 WO2011065669A2 (en) | 2009-11-24 | 2010-10-27 | Plasma immersion ion milling apparatus and method |
Publications (2)
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JP2013511817A JP2013511817A (ja) | 2013-04-04 |
JP5452731B2 true JP5452731B2 (ja) | 2014-03-26 |
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JP2012541004A Expired - Fee Related JP5452731B2 (ja) | 2009-11-24 | 2010-10-27 | プラズマ浸漬イオンを用いた加工装置及び方法 |
Country Status (4)
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US (1) | US9190239B2 (ja) |
JP (1) | JP5452731B2 (ja) |
KR (1) | KR101048057B1 (ja) |
WO (1) | WO2011065669A2 (ja) |
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KR101410743B1 (ko) * | 2012-12-10 | 2014-06-24 | 한국전기연구원 | 플라즈마 잠입 이온을 이용한 나노패턴 가공 장치 및 방법 |
US20160068957A1 (en) * | 2013-04-12 | 2016-03-10 | Haydn N.G. Wadley | Corrosion resistant metal and metal alloy coatings containing supersaturated concentrations of corrosion inhibiting elements and methods and systems for making the same |
KR101531666B1 (ko) * | 2013-09-12 | 2015-06-25 | 한국전기연구원 | 플라즈마를 이용한 필름 연마 장치 및 방법 |
USD759885S1 (en) * | 2015-02-16 | 2016-06-21 | Taeg Kim Nishimoto | Hexagonal translucent mesh light source container |
CN112088051A (zh) | 2018-05-22 | 2020-12-15 | 康明斯公司 | 等离子体电解质抛光的柴油机部件 |
KR102195136B1 (ko) * | 2019-01-10 | 2020-12-24 | 서울과학기술대학교 산학협력단 | 플라즈마 처리 장치 및 방법 |
US11120978B2 (en) * | 2019-01-29 | 2021-09-14 | Quantum Innovations, Inc. | System and method to increase surface friction across a hydrophobic, anti-fouling, and oleophobic coated substrate |
DE102020205788A1 (de) | 2020-05-07 | 2021-11-11 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen von reflektiven optischen Elementen für den EUV-Wellenlängenbereich sowie reflektive optische Elemente für den EUV-Wellenlängenbereich |
DE102020206708A1 (de) | 2020-05-28 | 2021-12-02 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für die Mikrolithographie |
DE102020212869A1 (de) | 2020-10-12 | 2021-11-04 | Carl Zeiss Smt Gmbh | Verfahren zum Bilden einer Wasserstoff-Schutzschicht |
DE102021202483A1 (de) | 2021-03-15 | 2022-09-15 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektiven optischen Elements für den extrem ultravioletten Wellenlängenbereich sowie reflektives optisches Element |
CN116673273B (zh) * | 2023-08-03 | 2023-10-27 | 北京奇峰蓝达光学科技发展有限公司 | 一种氟化钙原料表面去杂方法及其装置 |
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JPS6176668A (ja) * | 1984-09-20 | 1986-04-19 | Fujitsu General Ltd | スパツタリング装置 |
JPS62190840A (ja) * | 1986-02-18 | 1987-08-21 | Sumitomo Electric Ind Ltd | 半導体製造方法 |
US4950376A (en) * | 1988-06-21 | 1990-08-21 | Agency Of Industrial Science & Technology | Method of gas reaction process control |
EP0502269A1 (en) * | 1991-03-06 | 1992-09-09 | Hitachi, Ltd. | Method of and system for microwave plasma treatments |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
DE29615190U1 (de) * | 1996-03-11 | 1996-11-28 | Balzers Verschleissschutz Gmbh | Anlage zur Beschichtung von Werkstücken |
JPH10188873A (ja) | 1996-12-24 | 1998-07-21 | Hitachi Ltd | イオンミリング装置 |
JPH11149996A (ja) * | 1997-11-18 | 1999-06-02 | Mc Electronics Kk | プラズマリアクター |
JP2001266785A (ja) * | 2000-03-16 | 2001-09-28 | Sharp Corp | イオンビーム加工装置 |
US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
KR100894437B1 (ko) | 2007-02-02 | 2009-04-22 | 재단법인서울대학교산학협력재단 | 양의 바이어스 전극에 의한 인출구 주변 국부 방전을 이용한 고휘도 플라즈마 이온빔 발생장치 |
JP2008204905A (ja) * | 2007-02-22 | 2008-09-04 | Hitachi High-Tech Science Systems Corp | イオンミリング装置、及びイオンミリング加工方法 |
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2009
- 2009-11-24 KR KR1020090113633A patent/KR101048057B1/ko active IP Right Grant
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2010
- 2010-10-27 JP JP2012541004A patent/JP5452731B2/ja not_active Expired - Fee Related
- 2010-10-27 US US13/265,051 patent/US9190239B2/en not_active Expired - Fee Related
- 2010-10-27 WO PCT/KR2010/007418 patent/WO2011065669A2/en active Application Filing
Also Published As
Publication number | Publication date |
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KR20110057295A (ko) | 2011-06-01 |
US9190239B2 (en) | 2015-11-17 |
US20120222952A1 (en) | 2012-09-06 |
JP2013511817A (ja) | 2013-04-04 |
WO2011065669A2 (en) | 2011-06-03 |
WO2011065669A3 (en) | 2011-07-21 |
KR101048057B1 (ko) | 2011-07-11 |
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