JP5449352B2 - 放射源、リソグラフィ装置、およびデバイス製造方法 - Google Patents

放射源、リソグラフィ装置、およびデバイス製造方法 Download PDF

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Publication number
JP5449352B2
JP5449352B2 JP2011520416A JP2011520416A JP5449352B2 JP 5449352 B2 JP5449352 B2 JP 5449352B2 JP 2011520416 A JP2011520416 A JP 2011520416A JP 2011520416 A JP2011520416 A JP 2011520416A JP 5449352 B2 JP5449352 B2 JP 5449352B2
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radiation
illuminator
collector
relative
source module
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English (en)
Japanese (ja)
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JP2012509572A (ja
JP2012509572A5 (enExample
Inventor
クラッセン，ミシェル
フルーネフェルト，ロジェ
ストライチェン，アレクサンダー
スウィンケルズ，ゲラルドスヒューベルタス
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H10P76/2042—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011520416A 2008-07-30 2009-07-15 放射源、リソグラフィ装置、およびデバイス製造方法 Expired - Fee Related JP5449352B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8475908P 2008-07-30 2008-07-30
US61/084,759 2008-07-30
US9244308P 2008-08-28 2008-08-28
US61/092,443 2008-08-28
PCT/EP2009/059045 WO2010012588A1 (en) 2008-07-30 2009-07-15 Radiation source, lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2012509572A JP2012509572A (ja) 2012-04-19
JP2012509572A5 JP2012509572A5 (enExample) 2012-08-30
JP5449352B2 true JP5449352B2 (ja) 2014-03-19

Family

ID=41134690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011520416A Expired - Fee Related JP5449352B2 (ja) 2008-07-30 2009-07-15 放射源、リソグラフィ装置、およびデバイス製造方法

Country Status (6)

Country Link
US (1) US20110122389A1 (enExample)
JP (1) JP5449352B2 (enExample)
KR (1) KR101619272B1 (enExample)
CN (1) CN102105836A (enExample)
NL (1) NL2003202A1 (enExample)
WO (1) WO2010012588A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003192A1 (nl) * 2008-07-30 2010-02-02 Asml Netherlands Bv Alignment of collector device in lithographic apparatus.
NL2009372A (en) * 2011-09-28 2013-04-02 Asml Netherlands Bv Methods to control euv exposure dose and euv lithographic methods and apparatus using such methods.
KR102755819B1 (ko) * 2016-01-18 2025-01-15 에이에스엠엘 네델란즈 비.브이. 빔 측정 시스템, 리소그래피 시스템, 및 방법
DE102017212534A1 (de) * 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh Optisches System, Lithographieanlage, Verfahren zum Herstellen eines optischen Systems sowie Verfahren zum Austauschen eines Moduls
DE102020200158A1 (de) * 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102020212229B3 (de) * 2020-09-29 2022-01-20 Carl Zeiss Smt Gmbh Blenden-Vorrichtung zur Begrenzung eines Strahlengangs zwischen einer Lichtquelle und einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102024201763A1 (de) 2024-02-27 2025-02-20 Carl Zeiss Smt Gmbh Verfahren zur Vermessung einer Ist-Orientierung einer Reflexionsfläche eines aktorisch verkippbaren Nutz-Einzelspiegels sowie Messeinrichtung zur Durchführung des Verfahrens

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100685A (ja) * 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
AU2003277893A1 (en) * 2002-09-30 2004-04-23 Asml Netherlands B.V. Illumination system for a wavelength = 193 nm, comprising sensors for determining the illumination
US7113261B2 (en) 2004-06-08 2006-09-26 Asml Netherlands B.V. Radiation system, lithographic apparatus, device manufacturing method and device manufactured thereby
US7098466B2 (en) * 2004-06-30 2006-08-29 Intel Corporation Adjustable illumination source
KR101370203B1 (ko) * 2005-11-10 2014-03-05 칼 짜이스 에스엠테 게엠베하 광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템

Also Published As

Publication number Publication date
KR20110049821A (ko) 2011-05-12
NL2003202A1 (nl) 2010-02-02
US20110122389A1 (en) 2011-05-26
JP2012509572A (ja) 2012-04-19
KR101619272B1 (ko) 2016-05-10
CN102105836A (zh) 2011-06-22
WO2010012588A1 (en) 2010-02-04

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